TW200820344A - A method of manufacturing low temperature polysilicon film - Google Patents

A method of manufacturing low temperature polysilicon film Download PDF

Info

Publication number
TW200820344A
TW200820344A TW095139823A TW95139823A TW200820344A TW 200820344 A TW200820344 A TW 200820344A TW 095139823 A TW095139823 A TW 095139823A TW 95139823 A TW95139823 A TW 95139823A TW 200820344 A TW200820344 A TW 200820344A
Authority
TW
Taiwan
Prior art keywords
film
low temperature
temperature polycrystalline
low
germanium film
Prior art date
Application number
TW095139823A
Other languages
English (en)
Other versions
TWI330389B (en
Inventor
Shuo-Ting Yan
Original Assignee
Innolux Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Display Corp filed Critical Innolux Display Corp
Priority to TW095139823A priority Critical patent/TWI330389B/zh
Priority to US11/978,328 priority patent/US7682951B2/en
Publication of TW200820344A publication Critical patent/TW200820344A/zh
Application granted granted Critical
Publication of TWI330389B publication Critical patent/TWI330389B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Description

200820344 九；發明說明： m 【發明所屬之技術領域】 本發明係關於一種低溫多晶石夕薄膜製造方法。 【先前技術】 一般玻璃襯底之耐熱度往往只能到600°C，如果直接 在高溫下製作多晶矽薄膜，將會造成玻璃扭曲變形，因此， 產業界及學術界皆致力於發展製作低溫多晶矽薄膜（Low Temperature Polysilicon Thin Film) 〇 準分子雷射退火（Excimer Laser Annealing，ELA)方法 係目前一種廣泛用於製作低溫多晶矽薄膜之方法，其係利 用高能量之準分子雷射照射非晶矽薄膜，使非晶矽薄膜吸 收雷射能量，而使該非晶矽薄膜呈融化狀態，待冷卻後再 結晶成低溫多晶矽薄膜。該方法係採用準分子雷射發生器 之柱狀脈衝雷射，於非晶矽薄膜上上下掃描形成一照射區 域，該柱狀脈衝雷射上下掃描完後向前移動一距離，使形 成之複數照射區域相互重疊，且重疊部份之面積大於每一 照射區域面積之90%以上，由於重疊部份溫度較未重疊部 份溫度高，在未重疊部份較未重疊部份之界面發生非均勻 成核，藉由重疊部份與其他未重疊部份產生之橫向溫度梯 度，晶核將沿溫度較高之方向即從未重疊部份至重疊部份 之方向長大，並最終結晶成部份低溫多晶矽薄膜。 然而，上述方法形成之低溫多晶矽薄膜，由於準分子 雷射發生器需上下移動，大大增加了照射之時間，造成生 200820344 產 < 率降低。而且該製作方法所形成之晶粒尺寸與區域性 之橫向溫度梯度及超橫向生長（Super Lateral Growth，SLG) 點有關。當照射在非晶矽薄膜能量未超過超橫向生長點 時，區域性之橫向溫度梯度越大，則所形成之低溫多晶矽 薄膜之晶粒尺寸越大’反之’則越小。上述低溫多晶梦薄 膜之製造方法中，該複數照射區域之重疊部份與未重疊部 份所形成之橫向溫度梯度較小，不利於形成大晶粒之低溫 多晶矽薄膜；且雷射照射過程中，照射區域重疊部份之能 量不易控制，能量容易超過超橫向生長點，當能量超過超 橫向生長點時，非晶矽薄膜產生之結晶核之瞬間密度會降 至甚低，造成形成之低溫多晶石夕薄膜晶粒尺寸變小，從而 降低了低溫多晶石夕薄膜之電子遷移率。 【發明内容】 有鑑於此，提供一種能有效節省照射時間且能提高低 溫多晶矽薄膜晶粒尺寸之低溫多晶矽薄膜製造方法實為必 需。 ^~種低溫多晶砍薄膜製造方法’其包括下列步驟·首 先提供一襯底，在該襯底上形成一非晶矽薄膜；再提供一 準分子雷射發生器，該準分子雷射發生器口射出一面光源 脈衝雷射光束，該面光源脈衝雷射光束照射該非晶矽薄膜 形成一照射區域，該照射區域處於熔融狀態；該面光源脈 衝雷射光束移動一小距離，該面光源脈衝雷射光束照射該 非晶矽薄膜上形成另一照射區域，該二照射區域間形成一 8 200820344 間1¾區域；重複以上步驟，於該非晶矽薄膜上形成複數照 射區域及複數間隔區域。 相較於先前技術，本發明之製造方法中，該準分子雷 射發生器發出一面光源脈衝雷射光束，由於該面光源脈衝 雷射光束較先前技術之柱狀雷射光束之照射面積大，當利 用該面光源雷射光束照射該非晶矽薄膜時，不必上下移動 該準刀子雷射發生器，便可形成一照射區域，從而節省了 鲁照射時間，提高生產效率。而且該照射區域與該間隔區域 之橫向溫度差比先前技術之重疊部份與未重疊部份之橫向 Μ度差更大，照射於該非晶石夕薄膜之雷射能量較易控制， 避免冑b里超過超棱向生長點，從而有效增大所製得之低溫 多晶矽薄膜之晶粒尺寸，提高了低溫多晶矽薄膜之載流子 遷移率。 【實施方式】 _ 請參考圖1，係本發明一種較佳實施方式所揭露之低 溫多晶石夕薄膜製造方法之示意圖。 該低溫多晶石夕薄膜製造方法包括以下五個步驟： a ·提供一襯底10;採用真空蒸鍍方法，在該襯底1〇 表面依次形成一缓衝層11及一非晶矽薄膜12。 該概底10係一玻璃基板’該緩衝層11係一石夕氧層， 也可以由矽氧層和氮矽層共同組成之多層結構，該緩衝層 Π用於防止該襯底10内之雜質在後續工藝中向上擴散而 衫響所形成之低溫多晶石夕薄膜品質。其中，該緩衝層 11 9 200820344 ，非晶矽薄膜i2還可採用濺射、低壓化學氣相沈積及等 離子增強化學氣相沈積等方法。 、 \提供—準分子雷射發生器13,其包括-雷射口 17 及一精密定時步進馬達。 該田射口 17呈一矩形狀，由該雷射口 射出一面光 ^脈衝雷，光束14，該面光源脈衝雷射光束U長度為 化為G4um°該面光源脈衝雷射光束14係藉由氯 二 ί子受激發所形成’除此之外還可由氟化氬 Γ 氟化乳（KrF)或氟化氣（XeF)等分子受激發形 λ ιΓ同之77子將產生不同之波長’而準分子雷射之輸出 =與照射時間可根據所要生成之非W薄膜厚度而適當 =整。該精密^錢馬達18設置於該準分子雷射發生器 上該精在定恰步進馬達18藉由外界軟體設定之參數 =制’對步進時間和輯進行精密浦^藉由該精密定時 ν進馬達18 f動該準分子雷射發生器13朝垂直於該雷射 口 17長邊方向水平定時步進。 C.該準分子雷射發生器13對準該非晶石夕薄膜12，使 射出之面光源脈衝雷射光束14垂直照.射在該非晶石夕薄膜 12表面，形成一照射區域15。 由於田射具有很尚之聚集性，故該照射區域Μ形狀與 該面光源脈衝雷射光束14形狀一致，亦為矩形狀。該照射 區域15可接受該面光源脈衝雷射光束14複數次，兑 照射次數可根據雷射之輸出功率與該非晶砍薄膜V之厚 度調正，使該照射區域15達到完全熔融狀態。 200820344 ·該準分子雷射發生器13步進一距離，該面光源脈 衝雷射束14照射於該非晶矽薄膜12上形成另一照射區域 15，該二相鄰之照射區域15間形成一間隔區域16。 其中’該準分子雷射發生器13由該精密定時步進馬達 18控制’該準分子雷射發生器13之步進方向垂直於該雷 射口 17長邊且呈水平方向，該準分子雷射發生器13之步 進距離大於該照射區域15之寬度。該二照射區域平行 排佈，該間隔區域16未被該面光源脈衝雷射光束14照射， 且該間隔區域16寬度最好小於該照射區域15寬度之五分 ―― 〇 、e重衩步驟d ’於該非晶石夕薄膜12上形成複數照射 區域=及位於該二相鄰之照射區域15間之複數間隔區域 16 ’元成該非晶石夕薄膜I。之照射過程。
、=在本發明之製造方法中，由於該照射區域15之溫度 =該間隔區域16之溫度，故在該照射區域15與該間隔 域16之間產生一橫向溫度梯度。該照射區域15與該間i 區域16之介面發生非均勻成核，晶核沿該非晶矽薄膜 =照射區域與間隔區域之橫向溫度梯度方向長大，並最| 彡成低溫多晶碎薄膜。 在本實施方式中，還可對該襯底10提供一溫度，可 時間非晶㈣膜12溶體之固化速度、延長晶粒生· 石夕薄膜材更有利於獲得較大晶粒尺寸之低溫多》 底叫m ig可財受溫度前提下，可對如 加熱爐（圖未示）及一均熱板（圖未示）進行均: 11 200820344 加轉，本發明方法中該襯底10溫度可維持在300°C〜400 °C之間。 相較於先前技術，上述低溫多晶矽薄膜製造方法中， 該準分子雷射發生器13發出一面光源脈衝雷射光束14， 由於該面光源脈衝雷射光束14較柱狀雷射光束之照射面 積大，當利用該面光源雷射光束14照射該非晶矽薄膜12 時，不必上下移動該準分子雷射發生器13，便可形成一照 射區域15，從而節省了照射時間，提高生產效率。而且該 * 照射區域15與該間隔區域16之橫向溫度差比先前技術之 重疊部份與未重疊部份之橫向溫度差更大，而形成之低溫 多晶矽薄膜之晶粒尺寸與橫向溫度梯度及超橫向生長點有 關，當照射在該非晶矽薄膜12之能量未超過超橫向生長點 時，橫向溫度梯度越大，所形成之低溫多晶矽薄膜之晶粒 尺寸越大，故本發明之製造方法所形成之低溫多晶矽薄膜 具有更大之晶粒尺寸；照射該非晶矽薄膜12之雷射能量由 _ 其照射次數決定，較先前技術易控制，避免能量超過超橫 向生長點；配合較高之襯底10溫度能降低熔體之固化速 度、延長晶粒生長時間，從而形成具有更大尺寸之晶粒， 提高所製得之低溫多晶矽薄膜之載流子遷移率，有效增強 了所製得之低溫多晶矽薄膜之電性能。 綜上所述，本發明確已符合發明之要件，爰依法提出 專利申請。惟，以上所述者僅為本發明之較佳實施方式， 本發明之範圍並不以上述實施方式為限，舉凡熟習本案技 藝之人士援依本發明之精神所作之等效修飾或變化，皆應 12 200820344 涵4於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明一種較佳實施方式所揭露之低溫多晶矽 薄膜製造方法之示意圖。 【附圖標記說明】 概底 10 缓衝層 11 非晶矽薄膜 12 準分子雷射發生器 13 面光源脈衝雷射光束 14 照射區域 15 間隔區域 16 雷射口 \η 精密定時步進馬達18
13

Claims (1)

  1. 200820344 V 十、申請專利範圍 1. 一種低溫多晶矽薄膜製造方法，其包括下列步驟·· a·提供一襯底，在該襯底上形成一非晶矽薄膜； b.提供一準分子雷射發生器’其射出—面光源脈衝雷射 光束，該面光源脈衝雷射光束照射該非晶矽薄膜形成 一照射區域，該照射區域處於熔融狀態；
    C.該準分子f射發生n移動—小距離，使^面光源脈衝 雷射光束照射該非晶石夕薄膜上形成另一照射區域，該 二照射區域間形成一間隔區域； d.重複步驟c，於該非晶石夕薄膜上形成複數照射 複數間隔區域。 n:利範圍第i項所述之低溫多晶石夕薄膜製造方 進ΪΓ中該準分子雷射發生器包括-步進馬 達該乂進馬達控制該準分子雷射發生器移動。 圍第丨項所述之低溫多⑽薄膜製造方 矩形狀驟6中該準分子雷射發生器之雷射口呈一 4·如申請專利範圍第 法，其中，步驟b 370mm 〇 1項所述之低溫多晶矽薄膜製造方 中該面光源脈衝雷射光束長度為 5·如申睛專利益圍 法，其中，步驟 項所述之低溫多晶矽薄膜製造方 6.如申請專利範㈣該面光源脈衝雷射光束寬度為〇·4腿。 a園弟1項所述之低溫多晶矽薄膜製造方 200820344 m 今’其中’步驟b中該照射區域呈一矩形狀。 7·如申請專利範圍第1項所述之低溫多晶矽薄膜製造方 法’其中’步驟b中該二相鄰照射區域平行排佈。 8·如申請專利範圍第1項所述之低溫多晶矽薄膜製造方 法’其中’步驟c中該間隔區域寬度小於該照射區域寬 度之五分之一。 9·如申請專利範圍第1項所述之低溫多晶矽薄膜製造方 法’其中’步驟a中該襯底為一玻璃基板。 10·如申明專利範圍第1項所述之低溫多晶石夕薄膜製造方 法，其中’對該襯底施加一介於300°C〜400°C間之溫度。 η·、如申請專利範圍第1項所述之低溫多晶矽薄膜製造方 5 Α其中’該非晶矽薄膜採用真空蒸鐘、濺射、低壓化 ，氧相沈積或等離子化學氣相沈積方法中之任意一種 製成。 12·、如申睛專利範圍第1項所述之低溫多晶矽薄膜製造;;
    法’其中，該襯底與該非晶矽薄膜之間形成一緩衝層‘ =申凊專利範圍第11項所述之低溫多晶矽薄膜製造〉 ° 其中’該緩衝層係一矽氧層結構。 申睛專利範圍第u項所述之低溫多晶矽薄膜製造> 層妗其中，該缓衝層係由矽氧層和氮矽層共同組成之J 、、、Ό 構。 法，凊專利範圍第11項所述之低溫多晶矽薄膜製造方 相、+其中，該缓衝層採用真空蒸鍍、濺射、低壓化學氣 /積或等離子化學氣相沈積方法中之任意一種製成。 15
TW095139823A 2006-10-27 2006-10-27 A method of manufacturing low temperature polysilicon film TWI330389B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW095139823A TWI330389B (en) 2006-10-27 2006-10-27 A method of manufacturing low temperature polysilicon film
US11/978,328 US7682951B2 (en) 2006-10-27 2007-10-29 Method for fabricating a polysilicon layer having large and uniform grains

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095139823A TWI330389B (en) 2006-10-27 2006-10-27 A method of manufacturing low temperature polysilicon film

Publications (2)

Publication Number Publication Date
TW200820344A true TW200820344A (en) 2008-05-01
TWI330389B TWI330389B (en) 2010-09-11

Family

ID=39330745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139823A TWI330389B (en) 2006-10-27 2006-10-27 A method of manufacturing low temperature polysilicon film

Country Status (2)

Country Link
US (1) US7682951B2 (zh)
TW (1) TWI330389B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459444B (zh) * 2009-11-30 2014-11-01 Applied Materials Inc 在半導體應用上的結晶處理
CN104766813B (zh) * 2015-03-31 2017-09-26 京东方科技集团股份有限公司 准分子激光退火装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100296109B1 (ko) * 1998-06-09 2001-10-26 구본준, 론 위라하디락사 박막트랜지스터제조방법
US6509204B2 (en) * 2001-01-29 2003-01-21 Xoptix, Inc. Transparent solar cell and method of fabrication
US7061959B2 (en) * 2001-04-18 2006-06-13 Tcz Gmbh Laser thin film poly-silicon annealing system
US7235466B2 (en) 2002-10-31 2007-06-26 Au Optronics Corporation Method of fabricating a polysilicon layer

Also Published As

Publication number Publication date
TWI330389B (en) 2010-09-11
US7682951B2 (en) 2010-03-23
US20080102611A1 (en) 2008-05-01

Similar Documents

Publication Publication Date Title
KR101527457B1 (ko) 에피택셜성장용 내부개질기판, 다층막형성 내부개질기판, 반도체 디바이스, 반도체 벌크 기판 및 그들의 제조 방법
TWI423299B (zh) 雷射照射設備及製造半導體裝置之方法
TWI332682B (en) Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
KR100493802B1 (ko) 레이저어닐방법및레이저어닐장치
KR101491528B1 (ko) 단결정 기판, 단결정 기판의 제조 방법, 다층막이 형성된 단결정 기판의 제조 방법 및 소자 제조 방법
CN101168474B (zh) 低温多晶硅薄膜制造方法
KR100753432B1 (ko) 다결정 실리콘 및 그의 결정화 방법
JP4063493B2 (ja) 結晶薄膜製造装置、結晶薄膜製造方法および結晶薄膜素子
JP2005347694A (ja) 半導体薄膜の製造方法および半導体薄膜製造装置
JP2007281421A (ja) 半導体薄膜の結晶化方法
CN1218367C (zh) 薄膜半导体器件的制造方法
TW200820344A (en) A method of manufacturing low temperature polysilicon film
CN107068552B (zh) 一种多晶硅薄膜的制作方法、薄膜晶体管和阵列基板
CN1716071A (zh) 结晶方法、薄膜晶体管制造方法、薄膜晶体管及显示装置
TWI541861B (zh) 非晶矽層之結晶化方法
JPS60202931A (ja) 半導体装置の製造方法
JP4769491B2 (ja) 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
CN106373922B (zh) 低温多晶硅薄膜晶体管阵列基板及其制作方法
JP2797104B2 (ja) 半導体結晶層の製造方法
JP4289018B2 (ja) 太陽光発電素子の製造方法
JP2005005323A (ja) 半導体加工方法および半導体加工装置
CN1484278A (zh) 构筑二维有序分布硅量子点图形化纳米结构的方法
KR20030056248A (ko) 레이저를 이용한 실리콘 박막의 결정화 방법
CN102099895B (zh) 结晶膜的制造方法及结晶膜制造装置
JP6573163B2 (ja) 不純物導入装置、不純物導入方法及び半導体装置の製造方法