200819926 九、發明說明 【發明所屬之技術領域】 本發明爲有關半導體積體電路、印刷配線基板、於液 晶製造步驟中之用以除去光阻層之除去劑。 本申請案爲對於在2006年8月21日申請的日本國專 利申請案第2006-223 988號、在20007年1月12日申請 的日本國專利申請案第2007-4208號，以及在2007年3 月16日申請的曰本國專利申請案第2007-68529號，主張 優先權，在此援用其等之內容。 【先前技術】 半導體積體電路的製造方法爲於基體上塗佈光阻、曝 光、顯像之後，進行蝕刻、形成電路之後，或是從基體上 剝離光阻；或是在形成電路之後，進行灰化，除去光阻之 後，再剝離殘餘的光阻殘渣。爲了從基體上剝離光阻，或 者是從基體上剝離光阻殘渣，有許多人提案種種的光阻剝 離劑。 從以前以來，最爲人所頻繁使用的光阻剝離劑之中， 含有單乙醇胺等之乙醇胺類。（例如：專利文獻1 )。 但是，不只單乙醇胺的光阻剝離能力在工業上是不夠 充分的，而且其還有對於半導體、扁平式面板材料的損傷 很大的缺點。 舉向來的半導體積體電路的配線材料而言，一般使用 錦，單乙醇胺對於銘配線，可以毫無問題地使用。但是， -5- 200819926 近年半導體積體電路的微細化不斷進展，配線材料從電阻 大的鋁，不斷地演變爲電阻較小的銅。可是，習知之光阻 剝離劑的主劑之單乙醇胺對於銅的腐蝕很大，在使用於銅 配線製程上是有困難的。 還有，以液晶等之扁平式面板顯示器而言，一向是使 用鉻做爲匣電極的材料，但是於扁平式面板顯示器中，也 漸漸演變爲使用比鉻更低電阻的材料，也就是鋁、鉬、 銅。而且向來的剝離劑的主劑之單乙醇胺，針對扁平式面 板顯示器而言，其損傷性也是很大。 還有向來所爲人所知的N- ( 2-氰乙基）乙胺等之氰乙 基乙胺，使用做爲水溶液之情形，其光阻剝離性優異，對 於鋁、銅的損傷也很小，但是與單乙醇胺同樣地利用有機 溶劑來使用的情形，其將與有機溶劑反應，而招致分解的 產生（參照專利文獻2 )。 如以上般，現在正需求一種剝離液，比起單乙醇胺， 其光阻剝離能力更高，對於半導體、扁平式面板顯示器材 料的損傷很小，而且與有機溶劑的反應性很低。 〔專利文獻1〕日本專利特開昭62-493 55號公報 〔專利文獻2〕日本專利特開2004- 1 5 5 822號公報 【發明內容】 (發明所欲解決之課題） 如上述般，向來所提案的光阻剝離劑，其剝離性能不 夠充分，而且會對半導體、扁平式面板顯示器材料造成損 -6 - 200819926 傷。因此之故，本發明的目的爲在於提供除去光 物’其顯示優異的光阻剝離性的同時，對於半導 式面板顯不器材料造成損傷很小，以及提供使用 光阻用組成物之光阻的剝離方法。 本發明者們，針對除去光阻精心檢討的結果 含有具有複數個氰烷基之胺類而成的除去光阻用 言’其光阻剝離能力很高，不會與溶劑，特別是 反應而分解，而且其對於半導體、扁平式面板顯 的損傷很小，於是達成了完成本發明。 也就是說，本發明爲含有聚（氰烷基）乙胺 去光阻用組成物，以及使用其之除去光阻方法。 在以下’更進一步詳細說明本發明。 本發明之除去光阻用組成物的必要成份爲 基）乙胺。 聚（氰烷基）乙胺，爲於乙胺類使之含有2 氰乙基等之氰烷基的化合物。以不到2個氰烷基 使用的有機溶劑容易分解，而且其對於半導體、 板顯示器材料造成的損傷很大。 如果要舉例本發明的除去光阻用組成物之中 的聚（氰烷基）乙胺的話，可爲從N，N，-雙（2-乙二胺、N，N-雙（2-氰乙基）乙二胺、n，N，N，-參 基）乙二胺、N，N，N’，N’-肆（2-氰乙基）乙二胺 (2-氰乙基）哌嗪、N，N’-雙（2-氰乙基）-N，，-基）哌嗪、N，N’，N’-參（2-氰乙基）-N，，- ( 2-胺 阻用組成 體、扁平 該當除去 ，發現以 組成物而 有機溶劑 不器材料 而成的除 聚（氰烷 個以上之 而言，所 扁平式面 可以使用 氰乙基） (2-氰乙 、N，N，-雙 (2-胺乙 乙基）哌 200819926 嗪、Ν，Ν·雙（2-氰乙基）-N5- ( 2-胺乙基）哌嗪、 N，N，，N，，-參（2-氰乙基）-二乙烯基三胺、N，N，N，，N，，，N，，-伍（2_氰乙基）-二乙烯基三胺所組成群中所選出之至少1 種。 聚（氰烷基）乙胺，藉由在乙二胺、二乙烯基三胺、 哌嗪等之乙胺類上，附加丙醯腈、甲基丙醯腈，可以很容 易地製造。 例如N，N’·雙（2-氰乙基）乙二胺，若是在溶劑之 中，在乙二胺之上混合2倍當量以上的丙醯腈的話，會利 用自身的反應熱進行附加反應，可以得到雙體（bis body )。舉溶劑而言，可以使用水、有機溶劑。於此反應 中，有時雖然會副生只有附加1當量的甲基丙醯腈的N-(2-氰乙基）乙二胺（單體）、或是附加3當量以上的 N，N，N’-參（2-氰乙基）乙二胺（參體）、N，N,N，，N，-肆 (2-氰乙基）乙二胺（肆體），但是在本發明之中，較佳 爲減少非爲聚（氰烷基）乙胺之單體的含量。參體、肆體 對於有機溶劑的分解沒有影響，由於其對於半導體材料、 扁平式面板顯示器材料造成的損傷也很小，所以沒有問 題，但是還是以單體至少爲含有氰烷基胺全體的20%以下 爲佳，特別是在5%以下，甚至以完全不含有爲佳。若是 單體超過20%的話，所使用的有機溶劑很容易分解，而且 其對於半導體材料、扁平式面板顯示器材料造成的損傷也 會變大。 本發明的除去光阻用組成物，以溶劑而言，可以使用 -8- 200819926 有機溶劑、水，但是特佳爲使用有機溶劑。 於本發明之除去光阻用組成物中，舉可以使用的有機 溶劑而言，只要是可以和聚（氰烷基）乙胺一起混合的 話，並沒有受到特別的限制。舉容易取得且便宜的有機溶 劑而言，可舉N，N-二甲基甲醯胺、N，N-二甲基乙醯胺、 N-甲基乙醯胺、二甲基亞颯、四氫噻吩礪（sulf〇lane )、 六甲基磷酸三醯胺、乙醯胺、N-甲基吡咯烷酮、N，N-二乙 基甲醯胺、N，N’-二甲基乙烯脲、N，N’-二甲基丙烯脲、四 甲基脲、二甲基胺基甲酸甲酯、乙腈、乳醯胺、羥基酪酸 醯胺、2-吡咯烷酮、N-甲基丙醯胺、二甲基丙基醯胺、二 乙二醇、二乙二醇單甲醚、二乙二醇單丁醚、丙二醇單甲 醚、二丙二醇、二丙二醇單甲醚、乙二醇、丙二醇等。在 這些有機溶劑之中，例如N-甲基乙醯胺等會和單乙醇胺 或是N- ( 2·氰乙基）乙二胺等反應，溶劑會分解掉、但是 可以使用在本發明之除去光阻用組成物之中的聚（氰烷 基）乙胺，則幾乎不會與有機溶劑反應，可以防止溶劑的 分解。 本發明之除去光阻用組成物對於在半導體裝置、扁平 式面板顯示器等的製造上所使用的光阻的除去上，可發揮 優異的性能。在這之中，特別是可以於由使用從鋁、銅、 鉬所組成群之中選出之至少1種金屬之半導體或是扁平式 面板顯示器的製造中，使用在除去所使用的光阻。 在使用本發明之除去光阻用組成物之時的溫度，爲20 〜180°C，較佳爲80〜160°C。在超過180°C的溫度之下，聚 -9- 200819926 (氰烷基）乙胺會分解，而在不到20 °C的溫度下，要以可 滿足工業上的速度來除去光阻是有困難的。 使用本發明之除去光阻用組成物，除去光阻之時，也 可以使用超音波等、來促進除去速度。 (發明的效果） 若是根據本發明的除去光阻用組成物的話，由於其對 於半導體、扁平式面板顯示器材料不會造成損傷，而且可 以除去光阻的緣故，製造經微細化之半導體、扁平式面板 顯示器之事成爲可能。 【實施方式】 (用以實施發明之最佳形態） 藉由以下實施例更進一步詳細說明本發明，但是本發 明並不限定於此等。 實施例1 在10g的N，N’-雙（2-氰乙基）乙二胺中’加入N-甲 基乙醯胺，最終成爲1 〇 〇 g。將此加熱爲7 0 °C，取成膜了 1 線光阻之矽晶圓，浸漬於其中。1分鐘之後’予以水洗’ 觀察光阻剝離的比例之時，發現完全剝離。 還有，在l〇g的N，N，-雙（2-氰乙基）乙二胺之中， 加入水並使最終成爲1 00g，將此液體加熱爲70°c ’在液 體裏浸漬成膜了銅之矽晶圓。1分鐘之後’將之水洗’從 -10- 200819926 銅的膜厚變化來測定銅的受損速度之時，發現 分。同樣地將成膜了鋁的矽晶圓浸漬在70 °C淨 分鐘之後，將之水洗，從鋁的膜厚變化來測定 度之時，發現爲〇.12nm/分。 實施例2 於70°C下加熱實施例1之剝離液1 2小時 後，以氣相色層分析法進行分析剝離液之時， 基乙醯胺的分解爲0.7%。 實施例3 在 7.9g的 N，N’-雙（2-氰乙基）乙二思 N，N，N，-參（2-氰乙基）乙二胺、以及〇.4g的 肆（2-氰乙基）乙二胺之中加入N-甲基乙醯胺 爲l〇〇g。將此加熱至70°C，然後將成膜了 i 晶圓浸漬於其中。1分鐘之後，予以水洗’觀 的比例之時’發現完全剝離。 還有在7.9g的Ν,Ν’-雙（2-氰乙基）乙二 N，N，N，-參（2-氰乙基）乙二胺、以及〇.4g的 肆（2 -氰乙基）乙二胺之中加入水’使最終成 液體。於加熱上述液體爲70 °C的液體之中’浸 之矽晶圓。1分鐘之後，予以水洗’從銅的膜 定銅的受損速度之時，發現爲〇.48nm/分。同 了鋁的矽晶圓浸漬在70 °C的液體裏。1分鐘之 爲 0.55nm/ J液體裏。1 鋁的受損@ 。在冷卻之 發現Νβ 卜1.7g的 N,N，N，，N，-，使最終成 線光阻之矽 察光阻剝離 胺、1.7g的 N，N，N，，N，· 爲l〇〇g的 漬成膜了銅 厚變化來測 樣地將成膜 後，將之水 -11 - 200819926 洗，從鋁的膜厚變化來測定鋁的受損速度之時，發現爲 0 · 0 9 n m / 分。 實施例4 ^ 於70°C下加熱實施例3之剝離液12小時。在冷卻之 * 後，以氣相色層分析法進行分析剝離液之時，發現N-甲 基乙醯胺的分解爲0.5%。 實施例5 在0.4g的N-(2_氰乙基）乙二胺、7.6g的N，N’-雙 (2-氰乙基）乙二胺、1.6g的N，N，N’-參（2-氰乙基）乙 二胺、以及〇.4g的N，N，N’，N’-肆（2-氰乙基）乙二胺之中 加入N-甲基乙醯胺，使最終成爲l〇〇g。將此加熱至7〇 °C，然後將成膜了 i線光阻之矽晶圓浸漬於其中。1分鐘 之後，予以水洗，觀察光阻剝離的比例之時，發現完全剝 ⑩ 離。 還有在〇.4g的N-(2-氰乙基）乙二胺、7.6g的N，N’-雙（2-氰乙基）乙二胺、1.6g的沐叱>^’-參（2-氰乙基） 乙二胺、以及〇.4g的N，N，N’，N’-肆（2-氰乙基）乙二胺之 中加入水，使最終成爲l〇〇g的液體。於將上述加熱爲7〇 °C的液體之中，浸漬成膜了銅之矽晶圓。1分鐘之後，予 以水洗，從銅的膜厚變化來測定銅的受損速度之時，發現 爲0.58nm/分。同樣地將成膜了鋁的矽晶圓浸漬在70°C的 液體裏。1分鐘之後’將之水洗’從銘的膜厚變化來測定 -12- 200819926 實施例6 於70 °C下加熱實施例5之剝離液1 2小時。 ^ 後，以氣相色層分析法進行分析剝離液之時，〗 ' 基乙醯胺的分解變爲0.9 %。，比起實施例1、 些微增大。 比較例1 在0.9g的N-(2 -氰乙基）乙二胺、7.7g & (2-氰乙基）乙二胺、i.ig的N，N，N’-參（2-壽 二胺、以及〇,5g的N，N,N’，N、肆（2-氰乙基）Z 加入N -甲基乙醯胺，使最終成爲1 0 0 g。 於7 0°C下加熱該當剝離液12小時。在冷谷丨 氣相色層分析法進行分析剝離液之時，發現N _ 胺的分解爲2.5%。 以單體比例佔氰乙基胺全體的5%以上來該 劑的分解性顯著地增大。 比較例2 取代N，N，-雙（2-氰乙基）乙二胺，除了 ® 胺之外，以與實施例1同樣的方法來試驗。 其結果，光阻的剝離率爲80% ’對銅的損 nm/分，對鋁的損傷爲〇.38nm/分。 在冷卻之 [現N-甲 ，分解僅 j N，N，-雙 ，乙基）乙 ，二胺之中 J之後，以 -甲基乙酶 :，有機溶 :用單乙醇 傷爲1.13 -13 - 200819926 比較例3 於7 0 °C下加熱比較例2之剝離液1 2小時 後，以氣相色層分析法進行分析剝離液之時， 基乙醯胺的分解爲45%。 實施例7 在0.48的1^-(2-氰乙基）->^-(2-胺乙 9.6g的N，N-雙（2-氰乙基）-N”- ( 2-胺乙基） 加入二甲基亞礪，使最終成爲1 〇 〇 g。將此加_ 然後將成膜了 i線光阻之矽晶圓浸漬於其中 後，予以水洗，觀察光阻剝離的比例之時’ 離。還有，將此組成液加熱爲70 °C，在其中浸 之矽晶圓。1分鐘之後，予以水洗，從銅的膜 定銅的受損速度之時，發現爲〇.〇6nm/分。 比較例4 在 0.4g的N- ( 2-氰乙基）-N，- ( 2-胺乙 9.6g的N-(2-氰乙基）哌嗪之中，加入二甲基 終成爲100g。將此加熱至40°C，然後將成膜 之矽晶圓浸漬於其中。1 5分鐘之後，予以水洗 剝離的比例之時，發現完全沒有剝離。還有， 加熱爲70 °C，在其中浸漬成膜了銅之矽晶圓 後，予以水洗，從銅的膜厚變化來測定銅的 。在冷卻之 發現N-甲 基）哌0秦、 哌嗪之中， 》至 4 0 〇C， 。9分鐘之 發現完全剝 漬成膜了銅 厚變化來測 基）哌嗪、 亞颯，使最 Γ i線光阻 ，觀察光阻 將此組成液 。1分鐘之 受損速度之 -14- 200819926 時，發現爲0.31nm/分。 (產業上的可利用性） 藉由本發明，可以提供對於半導體、扁平式面板顯示 ^ 器材料不會造成損傷，並且可以除去光阻之組成物，變得 ' 可以製造經微細化之半導體、扁平式面板顯示器，爲產業 上極爲有用者。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit, a printed wiring board, and a removing agent for removing a photoresist layer in a liquid crystal manufacturing step. The present application is Japanese Patent Application No. 2006-223 988, filed on Aug. 21, 2006, and Japanese Patent Application No. 2007-4208, filed on Jan. 12, 2000, and in Priority is claimed on Japanese Patent Application No. 2007-68529 filed on March 16, the content of which is hereby incorporated herein. [Prior Art] The semiconductor integrated circuit is fabricated by applying a photoresist, exposing, developing a substrate, etching, forming a circuit, or stripping the photoresist from the substrate; or after forming the circuit, After ashing, after removing the photoresist, the residual photoresist residue is peeled off. In order to strip the photoresist from the substrate, or to strip the photoresist residue from the substrate, many have proposed various photoresist strippers. Among the photoresist release agents which have been frequently used in the past, ethanolamines such as monoethanolamine are contained. (Example: Patent Document 1). However, not only the resistive peeling ability of monoethanolamine is insufficient in the industry, but also there is a disadvantage that damage to semiconductors and flat panel materials is large. For the wiring material of the semiconductor integrated circuit to be used, it is generally used, and monoethanolamine can be used without any problem for the wiring. However, -5-200819926 In recent years, the miniaturization of semiconductor integrated circuits has progressed, and wiring materials have evolved from aluminum with high resistance to copper with low resistance. However, monoethanolamine, which is a main component of the conventional photoresist stripper, is highly corrosive to copper and is difficult to use in a copper wiring process. In addition, in the case of flat panel displays such as liquid crystals, chromium has been used as a material for germanium electrodes, but in flat panel displays, it has gradually evolved into a material that uses lower resistance than chromium, that is, aluminum. Molybdenum, copper. Further, monoethanolamine, which is a main component of the conventional release agent, is also highly damaging to a flat panel display. Further, cyanoethylamine such as N-(2-cyanoethyl)ethylamine which has been known to the public is used as an aqueous solution, and has excellent photoresist releasability, and is also highly damaging to aluminum and copper. In the case of using an organic solvent in the same manner as monoethanolamine, it is reacted with an organic solvent to cause decomposition (see Patent Document 2). As described above, a stripping liquid is currently required, which has higher photoresist stripping ability than monoethanolamine, has little damage to semiconductor and flat panel display materials, and has low reactivity with an organic solvent. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The proposed photoresist stripper has insufficient peeling performance and can cause damage to semiconductor and flat panel display materials. Therefore, an object of the present invention is to provide a photo-removing material which exhibits excellent photoresist releasability while causing little damage to a semi-conductive panel display material and providing light for using a photoresist composition. The peeling method of resistance. The inventors of the present invention have a photoresist removal function which contains a plurality of amines having a plurality of cyanoalkyl groups as a result of careful examination of the photoresist, and has high photoresist stripping ability and does not decompose with a solvent, particularly a reaction. Moreover, the damage to the semiconductor and the flat panel is small, and the present invention has been completed. That is, the present invention is a composition containing a poly(cyanoalkyl)ethylamine anti-photoresist and a method of removing the photoresist using the same. The present invention will be described in further detail below. The essential component of the photoresist removing composition of the present invention is ethylamine. Poly(cyanoalkyl)ethylamine is a compound containing a cyanoalkyl group such as 2 cyanoethyl group for ethylamine. The organic solvent used in less than two cyanoalkyl groups is easily decomposed, and it is greatly damaged to semiconductor and board display materials. If the poly(cyanoalkyl)ethylamine in the photoresist removing composition of the present invention is to be exemplified, it may be from N,N,-bis(2-ethylenediamine, N,N-bis(2-cyanide). Ethyl)ethylenediamine, n,N,N,-ylyl)ethylenediamine, N,N,N',N'-indole (2-cyanoethyl)ethylenediamine (2-cyanoethyl)piperazine , N,N'-bis(2-cyanoethyl)-N,-yl)piperazine, N,N',N'-parade (2-cyanoethyl)-N,,- (2-amine resistance When the composition is used and the flatness is removed, it is found that the organic solvent is not used as the material of the composition (the cyanoethyl group can be used for the flat surface) (2-cyanoethyl, N, N,-bis(2-amineethyl)piperate 200819926 azine, hydrazine, hydrazine bis(2-cyanoethyl)-N5-(2-aminoethyl)piperazine, N,N,,N,,- Selected from the group consisting of 2-(cyanoethyl)-divinyltriamine, N,N,N,,N,,,N,,-(2-cyanoethyl)-divinyltriamine At least one of poly(cyanoalkyl)ethylamine, by adding acrylonitrile or methyl propyl carbonitrile to ethylamines such as ethylenediamine, divinyltriamine, piperazine, etc. It can be easily produced. For example, N,N'·bis(2-cyanoethyl)ethylenediamine, if it is mixed with 2-fold equivalents of acrylonitrile on ethylenediamine in a solvent, it will use itself. The reaction heat is subjected to an additional reaction to obtain a bis body. In the case of a solvent, water or an organic solvent can be used. In this reaction, sometimes only one equivalent of methyl acrylonitrile is added as a by-product. N-(2-cyanoethyl)ethylenediamine (monomer), or an additional 3 equivalents of N,N,N'-parade (2-cyanoethyl)ethylenediamine (parameter), N,N , N,, N, -肆(2-cyanoethyl)ethylenediamine (steroid), but in the present invention, it is preferred to reduce the content of a monomer other than poly(cyanoalkyl)ethylamine. The substrate and the steroid have no effect on the decomposition of the organic solvent, and since the damage to the semiconductor material and the flat panel display material is small, there is no problem, but the monomer is at least 20 containing the entire cyanoalkylamine. % is better, especially below 5%, even if it is completely absent. If the monomer is more than 20%, The organic solvent used is easily decomposed, and the damage to the semiconductor material and the flat panel display material is also increased. The photoresist removing composition of the present invention can be used as a solvent, -8-200819926 organic solvent. And water, but it is particularly preferable to use an organic solvent. In the composition for removing a photoresist of the present invention, the organic solvent which can be used is not particularly mixed with poly(cyanoalkyl)ethylamine. It is particularly limited. Examples of organic solvents that are easily available and inexpensive include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylacetamide, and dimethyl. Thiazinium, sulfoxime, hexamethylene phosphamethoxazole, acetamide, N-methylpyrrolidone, N,N-diethylformamide, N,N'-dimethyl Ethylene urea, N, N'-dimethyl propylene urea, tetramethyl urea, methyl dimethyl carbazate, acetonitrile, decylamine, hydroxybutyric acid amide, 2-pyrrolidone, N-methyl propyl hydrazine Amine, dimethyl propyl decylamine, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether , propylene glycol monomethyl ether, dipropylene glycol, dipropylene glycol monomethyl ether, ethylene glycol, propylene glycol and the like. Among these organic solvents, for example, N-methylacetamide or the like may be reacted with monoethanolamine or N-(2·cyanoethyl)ethylenediamine, and the solvent may be decomposed, but may be used in the removal of the present invention. The poly(cyanoalkyl)ethylamine in the composition for photoresist is hardly reacted with an organic solvent, and decomposition of the solvent can be prevented. The composition for removing a photoresist of the present invention exhibits excellent performance in removing photoresist used in the manufacture of a semiconductor device, a flat panel display or the like. Among these, in particular, it is possible to use a photoresist which is used for removing a semiconductor or a flat panel display which is selected from the group consisting of aluminum, copper, and molybdenum. The temperature at which the composition for removing a photoresist of the present invention is used is 20 to 180 ° C, preferably 80 to 160 ° C. At temperatures above 180 ° C, poly-9-200819926 (cyanoalkyl)ethylamine will decompose, and at temperatures below 20 °C, it is necessary to remove the photoresist at an industrial rate. difficult. When the photoresist composition for removing the photoresist of the present invention is used to remove the photoresist, ultrasonic waves or the like can be used to promote the removal speed. (Effects of the Invention) According to the photoresist removing composition of the present invention, since it is not damaged to a semiconductor or a flat panel display material, and the photoresist can be removed, a micronized semiconductor or a flat type can be manufactured. The panel display is possible. [Embodiment] (Best Mode for Carrying Out the Invention) The present invention will be described in more detail by way of the following examples, but the invention is not limited thereto. Example 1 N-methylacetamide was added to 10 g of N,N'-bis(2-cyanoethyl)ethylenediamine to finally become 1 〇 〇 g. This was heated to 70 ° C, and a 1-line photoresist wafer was formed and immersed therein. After 1 minute, 'water washing' was observed, and when the ratio of the photoresist peeling was observed, it was found to be completely peeled off. Further, among l〇g of N,N,-bis(2-cyanoethyl)ethylenediamine, water was added and finally became 100 g, and the liquid was heated to 70 ° C. A copper wafer is filmed. After 1 minute, 'washing water' was measured from the change in film thickness of -10-200819926 copper to determine the damage rate of copper. Similarly, the tantalum wafer on which aluminum was formed was immersed at 70 ° C for a net minute, and then washed with water to measure the degree of aluminum film thickness, and found to be 12.12 nm/min. Example 2 After the peeling liquid of Example 1 was heated at 70 ° C for 1 hour, the decomposition of the ketamine was 0.7% when the stripping liquid was analyzed by gas chromatography. Example 3 In 7.9 g of N,N'-bis(2-cyanoethyl)ethylene disulfide N,N,N,-parade (2-cyanoethyl)ethylenediamine, and 4.4 g of hydrazine (2) N-methylacetamide was added to the mixture of -cyanoethyl)ethylenediamine. This was heated to 70 ° C, and then the film-forming i wafer was immersed therein. After 1 minute, when the ratio of the water was washed, it was found to be completely peeled off. Also in 7.9 g of ruthenium, Ν'-bis(2-cyanoethyl)ethylenediamine N,N,N,-gin(2-cyanoethyl)ethylenediamine, and 4.4 g of ruthenium (2-cyanide) The addition of water to the ethyl) ethylenediamine is the final liquid. The wafer was immersed in a liquid having a liquid temperature of 70 ° C. After 1 minute, it was washed with water. When the copper film was damaged at a rate of copper, it was found to be 48.48 nm/min. The tantalum wafer with the aluminum was immersed in a liquid at 70 °C. 1 minute is 0.55nm / J liquid. 1 Damage to aluminum @. On the cooling, Νβ 1.7g of N, N, N, N, - was observed, and the final line resistance was observed. The photoresist was stripped of amine, 1.7g of N, N, N, N, · was l〇 The 渍g stain was formed into a film with a change in copper thickness. After the film was formed, it was washed with water -11 - 200819926, and the damage rate of aluminum was measured from the change in thickness of aluminum to find that it was 0 · 0 9 Nm / min. Example 4 ^ The stripping solution of Example 3 was heated at 70 ° C for 12 hours. When the stripping solution was analyzed by gas chromatography by gas chromatography after cooling, the decomposition of N-methylacetamide was found to be 0.5%. Example 5 In 0.4 g of N-(2-cyanoethyl)ethylenediamine, 7.6 g of N,N'-bis(2-cyanoethyl)ethylenediamine, 1.6 g of N,N,N'- Adding N-methylacetamide to ginseng (2-cyanoethyl)ethylenediamine and 4.4g of N,N,N',N'-indole (2-cyanoethyl)ethylenediamine Eventually become l〇〇g. This was heated to 7 ° C, and the wafer in which the i-line photoresist was formed was immersed therein. After 1 minute, it was washed with water, and when the ratio of the photoresist peeling was observed, it was found to be completely peeled off. Also in 〇.4g of N-(2-cyanoethyl)ethylenediamine, 7.6g of N,N'-bis(2-cyanoethyl)ethylenediamine, 1.6g of MU叱>^'- Add water to the ginseng (2-cyanoethyl) ethylenediamine and 4.4g of N,N,N',N'-肆(2-cyanoethyl)ethylenediamine to make it finally l〇〇g Liquid. The copper wafer was immersed in a liquid heated to 7 ° C. After 1 minute, it was washed with water, and when the rate of damage of copper was measured from the change in film thickness of copper, it was found to be 0.58 nm/min. Similarly, a tantalum wafer in which aluminum was formed was immersed in a liquid at 70 °C. After 1 minute, 'washing it' was measured from the change in film thickness of 铭 -12- 200819926 Example 6 The peeling liquid of Example 5 was heated at 70 ° C for 12 hours. ^ After the analysis of the stripping solution by gas chromatography, the decomposition of the acetylamine was 0.9%. , slightly increased compared to the first embodiment. Comparative Example 1 N,N,N'-parameter (2) of 0.9 g of N-(2-cyanoethyl)ethylenediamine, 7.7 g & (2-cyanoethyl)ethylenediamine, i.ig Shoudiamine, and hydrazine, 5g of N, N, N', N, 肆 (2-cyanoethyl) Z are added to N-methylacetamide to finally become 100 g. At 70 ° C The stripping solution was heated for 12 hours. When the stripping solution was analyzed by the cold valley gas chromatography layer analysis method, it was found that the decomposition of the N-amine was 2.5%. The monomer ratio was 5% or more of the entire cyanoethylamine. The decomposability of the agent was remarkably increased. Comparative Example 2 The N,N,-bis(2-cyanoethyl)ethylenediamine was substituted in the same manner as in Example 1 except that the amine was used. The peeling rate of the photoresist is 80% 'loss of copper to nm/min, and the damage to aluminum is 〇.38nm/min. In cooling [now N-A, decomposition only j N, N, - double, ethyl) After J, the diamine, after J, with -methylethylase:, organic solvent: with single ethanol injury was 1.13 -13 - 200819926 Comparative Example 3 The stripping solution of Comparative Example 2 was heated at 70 ° C for 1 hour. When the stripping solution is analyzed by gas chromatography, the decomposition of acetamide is 4 5%. Example 7 1^-(2-cyanoethyl)->^-(2-amine B 9.6 g of N,N-bis(2-cyanoethyl)-N"-(2-amine B) Base) Add dimethyl hydrazine to make it 1 〇〇g. Add _ and then immerse the wafer with the i-line photoresist in it, and wash it with water to observe the ratio of photoresist stripping. 'Off. Also, the composition liquid was heated to 70 ° C, and the wafer was immersed therein. After 1 minute, it was washed with water, and when the copper film was damaged from the copper, the temperature was found to be 〇.〇6nm /min. Comparative Example 4 In 0.4 g of N-(2-cyanoethyl)-N,-(2-amine B 9.6 g of N-(2-cyanoethyl)piperazine, dimethyl end was added. 100 g. This was heated to 40 ° C, and then the film-formed ruthenium wafer was immersed therein. After 15 minutes, when the ratio of water washing and peeling was taken, it was found that there was no peeling at all. Also, the heating was 70 ° C. After immersing the copper wafer in a film, it was washed with water, and copper was measured from the film thickness of copper. Among the N-methyl) piperidine and piperazine found in the cooling, "to 40" C, 9 minutes found completely peeled and filmed Thickness change to test the base) piperazine, AZ, to make the most Γ-line photoresist, observe the photoresist to make this composition liquid. The damage rate of 1 minute -1419926, was found to be 0.31nm / min. (Applicability of the above) According to the present invention, it is possible to provide a composition which can be prevented from damage to a semiconductor or a flat panel display material, and which can remove the photoresist, and can be made into a miniaturized semiconductor or flat panel. The display is extremely useful for the industry.
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