200816514 九、發明說明： 【發明所屬之技術領域】 -本發明係關於-種發光二極體⑴ghtEmittingDiode， LED)及其透鏡體，尤其側於—種用於高效率顯示和照 明光學設備中之發光二極體及其透鏡體。 【先前技術】 近年來，在顯示和照明光學設備中，對於環境友好、 效率高且使用壽命長之發光二極體之需求大大增加。現有 2光—極體包括—半導體發光元件，該半導體發光元件 ::出此° —種基色（RGB )形成之白光。按照半導體發 接7〇件之佈置形式可將發光二極體分爲直下式和側光式兩 團 但且r八赞无二極體中，該半導體發 11;屮11設於顯示幕12之下方，由於該半導體發光元件 X出之白光係由混合複數個半導體發光元件（ :件綠:二:發出之光而形成’所以從三基色半導體發光 分混人，11不*12之距·D1 '必須達到一定範圍以便充 源之:型t 了直下式發光二極體之厚度，不利於光 光元：圖212:二—種側光式發光二極體中’該半導體發 發出之光之；Γΐ板22之一側，從半導體發光元件21 22之邊界面重1役23被限定在導光板内’且被導光板 之發光均勾性S射。因此該種側光式發光二極體具較好 Ί〖生和色衫調節能力，然而該種側光式發光二極 200816514 體難二應用在大尺寸之顯示屏幕中，且光之利用效率不高。 .爲提㊅光之湘效率’通常可在半導时光元件之上 方设透鏡體，如圖3所示，一種現有之用於 極體之透鏡體^ A 土 — m Λ , 反射面34，相對於透鏡 、- 〜由35成一定角度之第一折射面36，以及從入 光面32延伸到第一折射面％之第二折射面％。從入光面 :2之焦點（F)進入透鏡體31之光一部分被反射面％反 由折射面36射出透鏡體31，光之剩餘部分藉 由第-折射面38射出透鏡體31。故其可使大部光藉 體Γ了面/1和第二折射面38射出透鏡體31。藉由該透鏡 二Γ:1:型發光二極體之輕射特性，然，因該透鏡 之弟-折射面36爲一平面與第二折射面38爲單—曲 面〜、不易調整光之出射角度及出射光之分佈特性。另， = 光引導至透鏡體31之側面，然而光 圍tr:二反射必須滿足一定之入射角度範 圍如此—部分Μ人㈣度不滿足全反射 接從反射面34上方出射，致使光之利用效二: 【發明内容】 有繁於此，提供-種光之利用效率高、均句性好、 積較小之發光二極體非常必要。 用 另，财必要提供—種可以調整出射肖歧出射 特性之用於發光二極體之透鏡體。 π 200816514 本發明係關於一種發光二極體，其包括一半導體發光元 件及-透鏡體，該透鏡體包括-頂面、—人光面及一與頂面 相連之側面，該半導體發光元件與透鏡體入光面相鄰，該頂 面爲内凹之弧形反射面，該側面上鄰近該頂面設有第一折射 結構，該第一折射結構具複數個鋸齒狀結構形成之折射面。 一種透鏡體，用於發光二極體，該透鏡體包括一頂面、 -入光面及-與頂面相連之側面，該頂面爲内凹之弧形反射 面，該侧面上鄰近該頂面設有第一折射結構，該第一折射結 構具複數個鋸齒狀結構形成之折射面。 相較習知技術，所述透鏡體第一折射結構具複數個鋸齒 狀結構形成之折射面’而該折射面可根據實際需求設置對麻 之傾斜角度’進而可調整光之出射角度及出射光之輕射分佈 特性，從而提高光之利用效率及均勻性。 【實施方式】 下面將結合附圖和多個實施方式對本發明之發光二極 體及其透鏡體作進一步之詳細說明。 請參閱圖4及圖5,本發明第一實施方式提供一種發 光二極體1〇,其依次包括封裝座跡半導體發光元件細 及透鏡體300。 封裝座100爲柱狀體，其頂端具一凸台1〇1。該半導 體發光元件200設於該凸台101之中央位置。本實:方式 中之半導體發光元件200爲一半導體發光晶片。該封裝座 100底端還設有焊墊1〇2,該焊墊102用於與外電路連接。 8 200816514 透鏡體300爲一種柱狀之 3〇1.、一入光面304及一盎兮頂^構，其包括—頂面 逝爲内凹之弧形反射面^开面成3〇1^之側面。該頂面 ⑹，該側面上設有一第一折射;;=之:部（圖未 :删，且第一折射結構3〇2鄰近該頂面3〇1，之 -上’其入光面内凹形封裝座 寸略大於封裝座100之凸台1 Θ、、不），其尺 、、且裝k所述凸台1 〇 1淑 該凹陷配合而封裝與保護半導體發光元件勘。 與 、該頂面3〇1爲弧形反射面，其由不同曲率之 滑過渡形成，立可將丰莫辦恭 — 7 平 全反射作光7°件200發出之光線藉由 王反射作用¥向弟一折射結構3〇2。 第一折射結構302之—端與頂面斯連接 ，頂面3〇1之底部且與第二折射結構3〇3相連，盆上^复 ，鑛齒狀結構形成之折射面聽。每個折射面期設 調整各折射面3021之斜率可達到調整 ^之出射角度。可以理解’各個折射面職也可設不同斜 率以调整出射光之輻射分佈特性。 第二折射結構3〇3由於其所對應之出射光通量較少， 、在第f %方式中’第二折射結構爲光滑之圓柱面，用 j直接折射半導體發光元件2〇〇發出之出射光，如此可以 間化透鏡體300之結構。 使用時，請參閱圖6,半導體發光元件200發出之光， 大。卩刀向上傳播至頂面3〇1時，由於頂面之全反射作 用，絕大部分光線被反射至第一折射結構3〇2，藉由第一 200816514 折射結構302之折射後以一定角度範圍射出透鏡體300， 另，.部分光線直接從第二折射結構303射出透鏡體300。 ，請參閱圖7，第二實施方式中之透鏡體400與第一實 施方式之透鏡體300大體相似，其包括一頂面401、一第 一折射結構402與一第二折射結構403。其不同之處在於， 第一折射結構402設有二折射區，即第一折射區4022與第 二折射區4023,每個折射區均包括複數個斜率相同之鋸齒 狀之折射面，且第一折射區4022之折射面與第二折射區 f 4023之折射面之斜率不同，藉由調整第一折射區4022之 折射面之斜率及第二折射區4023之折射面之斜率及折射 面分佈狀態，達到調整光之出射角度及出射光之輻射分佈 特性。 請參閱圖8，第三實施方式中之透鏡體500與第一實 施方式之透鏡體300大體相似，其包括一頂面501、一第 一折射結構502與一第二折射結構503。該第一折射結構 502上設複數個鋸齒狀之折射面5021，其不同之處在於， k 第二折射結構503設有鋸齒狀折射面5032用來將發光二極 體出射光經過折射後出射至期望之方向，且第二折射結構 503上之折射面5032與第一折射結構501之折射面5021 成對稱分佈。 請參閱圖9，第四實施方式中之透鏡體600與第一實 施方式之透鏡體300大體相似，其包括一頂面601、一第 一折射結構602與一第二折射結構603。其不同之處，在 該透鏡體600之頂面601上方設有一反射層，在本實施方 式中該反射層爲一反射片604，當用於亮度較高之發光二 200816514 極體時，可防止較多光線自發光二極體 邛形成亮影，同時還可將Tf & 出射而在頂 體_。 叹了將頂面出射之再次反射入透鏡 ^閱圖！〇’第五實施方式卡之透鏡體扇 '方式之透鏡體300大體相似，其包括一頂面7〇ι、一第實 ::::Γ02與一第二折射結構7〇3。其不同之處在於， -在透鏡體700之反射層爲覆蓋於頂面加之200816514 IX. Description of the Invention: [Technical Field of the Invention] - The present invention relates to a light-emitting diode (1) ght Emitting Diode (LED) and a lens body thereof, particularly to a light-emitting device for use in high-efficiency display and illumination optical devices Diode and its lens body. [Prior Art] In recent years, in display and illumination optical devices, the demand for environmentally friendly, high-efficiency, and long-life light-emitting diodes has greatly increased. The conventional two-optical body includes a semiconductor light-emitting element, and the semiconductor light-emitting element has a white light formed by the primary color (RGB). According to the arrangement of the semiconductor device, the light-emitting diode can be divided into a direct-type and a side-light two-group, but the r-eight-no-diode, the semiconductor is 11; the 屮11 is disposed on the display screen 12. In the lower part, the white light emitted from the semiconductor light-emitting device X is mixed with a plurality of semiconductor light-emitting elements (: green: two: light emitted), so that the light is mixed from the three primary color semiconductors, 11 is not *12 distances·D1 'It must reach a certain range in order to recharge the source: the thickness of the direct-type light-emitting diode is not favorable to the optical element: Figure 212: The light emitted by the semiconductor in the two-side light-emitting diode One side of the seesaw 22 is defined in the light guide plate from the boundary surface of the semiconductor light emitting element 21 22, and is illuminated by the light guide plate. Therefore, the side light type light emitting diode is used. It has better Ί〗 〖sheng and color shirt adjustment, however, this kind of side-light type illuminating dipole 200816514 is difficult to apply in large-size display screen, and the utilization efficiency of light is not high. 'The lens body can usually be placed above the semi-conductive time component, as shown in Figure 3. A conventional lens body for a polar body, a reflective surface 34, with respect to a lens, a first refractive surface 36 at an angle of 35, and extending from the light incident surface 32 to a first refractive index The second refractive surface % of the surface %. The light entering the lens body 31 from the light incident surface: 2 (F) is partially emitted by the reflecting surface, and the refractive surface 36 is emitted from the lens body 31, and the remaining portion of the light is subjected to the first refraction. The surface 38 emits the lens body 31. Therefore, most of the light-emitting surface/1 and the second refractive surface 38 can be emitted from the lens body 31. The light-emitting characteristics of the lens diode: 1: type light-emitting diode However, since the lens-refractive surface 36 of the lens is a plane and the second refractive surface 38 is a single-curved surface, the emission angle of the light is not easily adjusted, and the distribution characteristic of the outgoing light. Further, = light is guided to the lens body 31. Side, however, the light circumference tr: the two reflections must satisfy a certain range of incident angles - part of the person (four) degree does not satisfy the total reflection connection from above the reflection surface 34, resulting in the use of light two: [Summary] , providing - a light-emitting diode with high efficiency, uniformity, and small product It is very necessary. In addition, it is necessary to provide a lens body for a light-emitting diode that can adjust the exiting characteristics of the ray differential. π 200816514 The present invention relates to a light-emitting diode comprising a semiconductor light-emitting element and a lens The lens body includes a top surface, a human light surface and a side surface connected to the top surface, the semiconductor light emitting element is adjacent to the light incident surface of the lens body, and the top surface is a concave curved reflecting surface, the side surface Adjacent to the top surface is provided with a first refractive structure having a refractive surface formed by a plurality of sawtooth structures. A lens body for a light emitting diode, the lens body comprising a top surface, - light entering a surface and a side connected to the top surface, the top surface being a concave curved reflecting surface, the side surface being adjacent to the top surface is provided with a first refractive structure, the first refractive structure having a plurality of sawtooth structures formed by the refraction surface. Compared with the prior art, the first refractive structure of the lens body has a plurality of refracting surfaces formed by a zigzag structure, and the refracting surface can be set according to actual requirements, and the angle of inclination of the ray can be adjusted to further adjust the light exit angle and the outgoing light. Light distribution characteristics, thereby improving the efficiency and uniformity of light utilization. [Embodiment] Hereinafter, a light-emitting diode of the present invention and a lens body thereof will be further described in detail with reference to the accompanying drawings and embodiments. Referring to FIG. 4 and FIG. 5, a first embodiment of the present invention provides a light-emitting diode 1〇, which in turn includes a packaged semiconductor light-emitting device and a lens body 300. The package base 100 is a columnar body having a boss 1〇1 at its top end. The semiconductor light emitting element 200 is provided at a central position of the boss 101. The semiconductor light emitting device 200 of the present embodiment is a semiconductor light emitting chip. The bottom of the package base 100 is further provided with a solder pad 1 〇 2 for connecting to an external circuit. 8 200816514 The lens body 300 is a columnar 3〇1., a light-incident surface 304 and an argon-shaped dome structure, which includes an arc-shaped reflecting surface whose top surface is concave and concave, and the opening surface is 3〇1^ The side. The top surface (6) is provided with a first refraction; the portion of the first refraction; and the first refraction structure 3〇2 is adjacent to the top surface 3〇1, and the upper portion thereof is in the light incident surface. The concave package seat is slightly larger than the boss 1 of the package base 100, and not, and the protrusions of the protrusions 1 and 1 are packaged to protect the semiconductor light-emitting elements. And the top surface 3〇1 is a curved reflecting surface, which is formed by the sliding transition of different curvatures, and the vertical can be used to make the light emitted by the 7° piece 200 by the reflection of the king. To the younger brother a refractive structure 3〇2. The end of the first refractive structure 302 is connected to the top surface, the bottom of the top surface 3〇1 is connected to the second refractive structure 3〇3, and the refraction surface formed by the mineral tooth structure is listened to. Each refractive surface period is adjusted to adjust the slope of each refractive surface 3021 to achieve an adjustment angle of exit. It can be understood that each of the refractive surfaces may also have different slope ratios to adjust the radiation distribution characteristics of the outgoing light. The second refractive structure 3〇3 has a relatively small outgoing light flux, and in the f% mode, the second refractive structure is a smooth cylindrical surface, and j directly refracts the emitted light emitted by the semiconductor light emitting element 2, This makes it possible to intervene the structure of the lens body 300. In use, referring to FIG. 6, the light emitted from the semiconductor light emitting element 200 is large. When the file propagates up to the top surface 3〇1, most of the light is reflected to the first refractive structure 3〇2 due to the total reflection of the top surface, and is refracted by the first 200816514 refractive structure 302 at a certain angular range. The lens body 300 is emitted, and a part of the light is directly emitted from the second refractive structure 303 to the lens body 300. Referring to FIG. 7, the lens body 400 of the second embodiment is substantially similar to the lens body 300 of the first embodiment, and includes a top surface 401, a first refractive structure 402 and a second refractive structure 403. The difference is that the first refractive structure 402 is provided with two refractive regions, that is, the first refractive region 4022 and the second refractive region 4023, each of the refractive regions includes a plurality of sawtooth-shaped refractive surfaces having the same slope, and the first The slope of the refractive area of the refractive area 4022 is different from the slope of the refractive surface of the second refractive area f 4023 by adjusting the slope of the refractive surface of the first refractive area 4022 and the slope of the refractive surface of the second refractive area 4023 and the distribution of the refractive surface. The angle of exit of the adjusted light and the radiation distribution characteristic of the emitted light are achieved. Referring to FIG. 8, the lens body 500 of the third embodiment is substantially similar to the lens body 300 of the first embodiment, and includes a top surface 501, a first refractive structure 502 and a second refractive structure 503. The first refractive structure 502 is provided with a plurality of sawtooth-shaped refractive surfaces 5021, wherein the second second refractive structure 503 is provided with a sawtooth-shaped refractive surface 5032 for refracting the light emitted from the LED to be refracted to The desired direction, and the refractive surface 5032 on the second refractive structure 503 is symmetrically distributed with the refractive surface 5021 of the first refractive structure 501. Referring to FIG. 9, the lens body 600 of the fourth embodiment is substantially similar to the lens body 300 of the first embodiment, and includes a top surface 601, a first refractive structure 602 and a second refractive structure 603. The difference is that a reflective layer is disposed above the top surface 601 of the lens body 600. In the embodiment, the reflective layer is a reflective sheet 604. When used for the high brightness of the light emitting diode 200816514, it can be prevented. More light forms a bright shadow from the light-emitting diode, and Tf & can also be emitted in the acrosome _. Sighed and reflected the top surface again into the lens. The lens body 300 of the fifth embodiment card is generally similar, and includes a top surface 7〇ι, a first solid ::::Γ02 and a second refractive structure 7〇3. The difference is that - the reflective layer of the lens body 700 covers the top surface plus
防止光直接從頂面7〇1上方出射，從日而減少射 光之抽失提南均勻性。 综上所述，本發明符合發明翻要件，爰㈣提出專利 :。惟，以上所述者僅為轉明之較佳實施彳&，本發明 之範圍並不以上述實施方式為限，舉凡熟習本案技蓺之丄士 援依本發明之精神所作之等效修飾或變化，皆應^於以下 申請專利範圍第内。 【圖式簡單說明】 圖1係習知技術中之直下式發光二極體之立體示意圖； 圖2係習知技術中之側光式發光二極體之截面示音圖； 圖3係習知技術中用於發光二極體之透鏡體截面示意 團， 圖4係本發明發光二極體第一實施方式中之側視圖； 圖5係本發明發光二極體第一實施方式中之截面視圖； 圖6係本發明發光二極體第一實施方式中之光路圖； 圖7係本發明發光二極體第二實施方式之透鏡體截面視 圖； 11 200816514 圖8係本發明發光二極體第三實施方式之透鏡體截面視 圖； 圖9係本發明發光二極體第四實施方式之透鏡體截面視 圖； 圖10係本發明發光二極體第五實施方式之透鏡體截面 視圖。 主要元件符號說明】 發光二極體 10 封裝座 100 凸台 101 焊墊 102 半導體發光元件 200 透鏡體 300,400,500,600,700 凸台 101 頂面 301，401，501，601，701 ^ 第一折射結構 第二折射結構 302.402.502.602.702 303.403.503.603.703 入光面 304 折射面 3021,5021,5032 第一折射區 4022 第二折射區 4023 反射片 604 反射膜 704 12Preventing light from directly exiting above the top surface 7〇1, reducing the uniformity of the extraction of the light from the day. In summary, the present invention conforms to the invention and the stipulations of the invention. However, the above description is only for the preferred embodiment of the invention, and the scope of the present invention is not limited to the above embodiments, and the gentleman who is familiar with the technology of the present invention is equivalent to the equivalent modification of the spirit of the present invention. Changes should be made within the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic perspective view of a direct-lit light-emitting diode in a prior art; FIG. 2 is a cross-sectional sound diagram of a side-lighting light-emitting diode in a prior art; FIG. FIG. 4 is a side view of a first embodiment of a light-emitting diode of the present invention; FIG. 5 is a cross-sectional view of the first embodiment of the light-emitting diode of the present invention; Figure 6 is a light path diagram of a first embodiment of a light-emitting diode of the present invention; Figure 7 is a cross-sectional view of a lens body of a second embodiment of the light-emitting diode of the present invention; 11 200816514 Figure 8 is a light-emitting diode of the present invention Fig. 9 is a cross-sectional view of a lens body of a fourth embodiment of the light-emitting diode of the present invention; and Fig. 10 is a cross-sectional view of the lens body of the fifth embodiment of the light-emitting diode of the present invention. Main component symbol description] Light-emitting diode 10 Package base 100 Boss 101 Solder pad 102 Semiconductor light-emitting element 200 Lens body 300, 400, 500, 600, 700 Boss 101 Top surface 301, 401, 501, 601, 701 ^ First refractive structure Second refractive structure 302.402 .502.602.702 303.403.503.603.703 illuminating surface 304 refractive surface 3021, 5021, 5032 first refractive area 4022 second refractive area 4023 reflective sheet 604 reflective film 704 12