TWI388772B - Light emitting diode - Google Patents

Description

Light-emitting diode

The present invention relates to a light-emitting diode, and more particularly to a light-emitting diode having different light shapes in a horizontal viewing angle and a vertical viewing angle direction.

The light-emitting diode has been widely used because of its small size, light weight, fast response, etc. The white light diode invented in recent years has been used as a light source in backlight modules, illumination systems, and optical projectors.

It is well known that the reflectance is inversely proportional to the optical coupling ratio, in other words, as the reflectance increases, the optical coupling ratio decreases. The second figure is a schematic diagram of the relationship between the reflectivity of the analog light-emitting diode and the incident angle of the light-emitting diode in the backlight module. As shown in the second figure, when the incident angle of the light-emitting diode is greater than 60°, the reflectivity will increase significantly, which hinders the improvement of the optical coupling ratio, resulting in an optical coupling ratio of the ordinary white light diode. %about.

As shown in the first figure, in the backlight module 10 applied to the liquid crystal display, since the encapsulation colloid of the white LED 11 has a circular structure, the light shape is a Lambertian distribution, that is, the luminous intensity is The center weakens to the periphery, also known as the Lambert distribution or the Lambert light shape. Therefore, the center position of each white light diode 11 is the brightest, but the brightness between each white light diode 11 is relatively dark, so that the backlight module is unevenly distributed, thereby forming a hotspot.

Due to the condensed light shape of the light-emitting diode, the brightness of the light-emitting diodes in the illumination system is weak, causing a bright and dazzling phenomenon of the light tube, and causing eye fatigue of the user or Uncomfortable situation.

The viewing angle produced by a typical light-emitting diode (about 120°) does not match the use of the projector's optical engine (the optical engine's light-receiving angle is 60°), so if the light-emitting diode is used as the light source of the projector, the light is emitted. The viewing angle of the diode must be properly adjusted, but this will cause a drop in light usage. In addition, in order to satisfy the ratio of the projector's special image (for example, a 16:9 ratio), it is necessary to convert the circularly symmetric light pattern produced by the light-emitting diode to a 16:9 asymmetric long light type. In practice, the integration tunnel or Micro-Lens array technology is generally used to achieve this purpose, but this process not only causes light loss, but also causes an additional volume increase.

In summary, the light-emitting distribution of the existing light-emitting diodes is a Lambertian distribution, and the application in the backlight module has the problem that the light coupling ratio is difficult to be improved, and hotspot phenomenon occurs at the same time; In the lighting system, there is also the problem of optical coupling rate, and there is also glare phenomenon; now the application of the light-emitting diode in the optical projector will make the light usage lower, and the current solution It can cause other problems, such as increasing the optical path, increasing the size of the projector, and so on.

Therefore, the inventors have solved the above problems from the viewpoint of the light shape of the light-emitting diode to achieve a multiplier effect.

The present invention is directed to a light-emitting diode having a light-shaped distribution of a first viewing angle of a light-emitting diode as a Batwing light shape, and a light-shaped distribution of a second viewing angle perpendicular to the first viewing angle. It is a spotlight to solve traditional technical problems.

In order to achieve the above object, in accordance with the gist of the present invention, a light-emitting diode includes a susceptor formed with a recessed portion, a light-emitting chip disposed on the recessed portion, and an adhesive layer filled in the recessed portion. A light-transmitting optical adjustment structure is disposed above the light-emitting chip such that the light-shaped distribution in the horizontal viewing direction of the light-emitting diode is different from the light-shaped distribution in the vertical viewing direction.

According to the above configuration, it is possible to make the viewing angle of the LED in the horizontal direction different from the light distribution in the vertical direction, for example, a batwing shape in the horizontal direction and a condensing shape in the vertical direction, which is advantageous. The uniformity of the LED illumination, and the angle of the light emitted by the vertical viewing angle is mostly less than 60°, which is beneficial to improve the optical coupling ratio of the LED. The horizontal viewing angle of the batwing light shape can solve the hotspot of the light in the backlight module. The phenomenon and the optical coupling ratio can of course solve the glare phenomenon of the illumination system, and the optical coupling ratio of the LED is improved, and the optical coupling ratio of the illumination system is directly improved. In addition, the light shape of the LED having the above structure is a non-circular symmetrical light shape, which can be applied to an optical projector to adjust the major axis and the minor axis of the elliptical curved surface, the width L of the concave surface, and the semi-elliptical slope or The curvature of the semi-circular surface makes the light pattern close to a 16:9 ratio for use in optical projectors.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

The invention will be described and described in detail below with reference to the accompanying drawings.

Referring to the third, fourth, and fifth figures, an embodiment of the present invention provides a light emitting diode 100.

The LED 100 includes a pedestal 101, a luminescent wafer 102, and an adhesive layer 103. The pedestal 101 has an accommodating space, and the accommodating space may be recessed downwardly to form a recessed portion 104. The recessed portion 104 has a bottom surface 105 and a side surrounding the periphery of the bottom surface 105. Wall 106. The bottom surface 105 and the sidewall surface 106 cooperate to define the accommodating space. The illuminating wafer 102 is disposed in the recess portion 104 and is mounted on the bottom surface 105. The pedestal 101 further includes a conductive terminal 107. The luminescent wafer 102 is electrically connected to the illuminating wafer 102. The conductive terminal 107 provides a voltage or other control signal required to illuminate the wafer 102. The sealant layer 103 is filled in the accommodating space of the recessed portion 104 and filled to cover the top surface and the peripheral surface of the luminescent wafer 102.

The light emitting diode 100 further includes an optical adjustment structure 200 disposed above the base 101 and packaged integrally therewith. The light emitted by the light-emitting chip 102 passes through the optical adjustment structure 200, so that the light-shaped distribution in the horizontal viewing direction of the light-emitting diode 100 is different from the light-shaped distribution in the vertical viewing direction. For example, the light-shaped distribution of the light-emitting diode in the horizontal viewing direction is a batwing shape, and the light-shaped distribution in the vertical viewing direction is a Lambertian light shape.

In conjunction with the fourth or eighth A diagram, the optical adjustment structure 200 is generally a semi-elliptical sphere 202 having a top surface that is inwardly recessed with a concave surface 201 and connected to the surrounding semi-elliptical sphere 202. The semi-elliptical spherical shape 202 has a long axis 203 and a short axis 204. The long axis 203 and the short axis 204 are perpendicular to each other. The long axis 203 is a horizontal axis (X axis), and the short axis 204 is a Vertical axis (Y axis). The structure of the optical adjustment structure 200 will be described in more detail later, so as to clearly show that the light-shaped distribution in the horizontal viewing direction of the light-emitting diode is a batwing shape, and the light-shaped distribution in the vertical viewing direction is Lambert. Light shape.

As shown in the third figure, when the light of the light-emitting chip 102 is emitted from the susceptor 101, the geometric center position of the concave surface 201 is aligned above the light-emitting wafer 102 in order to be able to adjust the light pattern. Wherein, the concave surface 201 is composed of two identical semi-elliptical inclined surfaces 2011, 2012, and in the direction of the long axis 203, a height-increasing aspect is formed from the center of the concave surface 201 to the periphery; in addition, the above-mentioned semi-elliptical spherical shape 202 The cross section along the long and short axes is convex. Of course, the concave surface 201 can also be composed of two identical semicircular slopes.

Still further, for better control of light, the contour of the luminescent wafer 102 is optimally similar to the outer contour of the recess 104. Referring to the sixth figure, the illuminating wafer 102 is exemplified by a rectangular cube, that is, its peripheral surface is composed of two parallel and spaced long side faces 1021, and two parallel and spaced short side faces 1022. Therefore, the outer edge contour of the recessed portion 104 is correspondingly designed as a rectangular cube, that is, the side wall surface 106 is composed of two parallel and spaced apart long side wall faces 1061 and two parallel and spaced short side wall faces 1062. Moreover, the long side wall surface 1061 of the recessed portion 104 is parallel to the long side surface 1021 of the light emitting wafer 102, and the short side wall surface 1062 of the recessed portion 104 is parallel to the short side surface 1022 of the light emitting wafer 102.

In order to ensure that the light is emitted from the top surface of the light-emitting wafer 102, the light-shaped distribution provided in the direction of the vertical viewing direction, that is, the short-axis direction (the Y-axis in the fourth figure) is the Lambertian light shape as shown in the ninth figure. (Lambertian Contribution), it is necessary to limit the width difference values of the side faces 1021, 1022 and the side wall faces 1061, 1062.

As shown in FIG. 7A, the difference in width between the short-direction width WS1 between the long side wall faces 1061 and the short-direction width WS2 between the long side faces 1021 is less than 0.6 mm (ie, WS1-WS2). <0.6mm). Similarly, the difference in width between the long width WL1 and the short side 1062 between the short side walls 1022 is less than 0.6 mm (ie, WL1 - WL2 < 0.6 mm). In this embodiment, the difference in width between the short width WS1 and the short width WS2 is 0.4 mm, and the difference in width between the long width WL1 and the long width WL2 is also 0.4 mm.

Referring to FIG. 7B, since the sidewall surface 106 of the recess 104 is parallel to the peripheral surface of the luminescent wafer 102, most of the light (photons) emitted from the peripheral surface of the luminescent wafer 102 into the encapsulant layer 103 is limited. The side wall surface (the combination of the long side wall surface 1061 and the short side wall surface 1062) of the recessed portion 104 is reflected back and forth with the peripheral surface (the combination of the long side surface 1021 and the short side surface 1022) of the light-emitting chip 102, or is absorbed and converted into other forms. energy. Therefore, in fact, most of the light emitted by the LED is the light emitted from the top surface of the light-emitting chip 102. When considering the size of the light-emitting chip 102 and the size of the recess 104 (especially its width and height), the light emitted from the top surface of the light-emitting chip 102 falls within the range of the angle 01, wherein the angle θ1 is optimal. Not more than 120°. Thus, the light emitted by the light-emitting chip 102 approximates an electric light source, and the so-called electric light source refers to a light source whose light is concentrated. It should be noted that the phosphor powder 109 for wavelength conversion may be doped in the sealing layer 103, and the sealing layer 103 (also referred to as a phosphor layer) having a phosphor powder may be filled in the depressed portion. In the accommodating space of 104, the top surface and the peripheral surface of the luminescent wafer 102 are covered with a filling. For example, the illuminating wafer 102 can be selected to emit a blue light having a wavelength between 400 nm and 470 nm, and the sealing layer 103 can be doped with yellow fluorescent light for converting blue light and having a wavelength between 520 nm and 570 nm. The powder forms a white light by mixing colors to form a white light emitting diode. Of course, in the mechanism of color mixing into white light, in addition to the above-mentioned collocation, it is also possible to select a combination of his color mixing, which is not intended to limit the invention, but is exemplified to better understand the present invention.

Based on the above, for the white light diode, the light emitted from the top surface of the light-emitting chip 102 has a substantial contribution to the emitted white light. On the other hand, the white light emitted from the peripheral portion of the light-emitting chip 102 to the entire light-emitting diode can be regarded as having no contribution or a small contribution. Thus, the light emitted by the light-emitting chip 102 approximates an electric light source, and the so-called electric light source refers to a light source whose light is concentrated.

A detailed description will be given below to describe the light shape of the light distribution: the light shape in the horizontal viewing angle (X-axis) direction and the vertical viewing angle (Y-axis) direction of the light-emitting diode 100 exhibit different types of light shapes, and two different types. After the superposition of the light shape, it will be more conducive to improve the uniformity of the light distribution. Here, only the ordinary light-emitting diode is taken as an example, and the white light-emitting diode is similarly treated.

Please refer to FIG. 8A, which schematically illustrates the light path of the optical adjustment structure 200 in the direction of the long axis 203. The concave surface 201 has a concave curved interface 301 along the direction of the long axis 203 and a planar interface 302 along the short axis 204 (as shown in FIG. 8B).

The light is emitted by the point source 300 (i.e., the above-described light-emitting chip 102). In the long-axis direction, the interface corresponding to the light is a concave curved interface 301 of the concave surface 201. The concave curved interface 301 of the concave surface 201 refracts white light as it passes through the concave curved interface 301, and has different degrees of light divergence along the concave contour of the concave curved interface 301. For other rays that do not pass through the concave curved interface 301, but pass through the semi-elliptical spherical shape 202 of the optical adjustment structure 200, different degrees of light accumulation occur along the convex contour of the semi-elliptical spherical shape 202. The action of the semi-elliptical sphere 202 is here similar to the action of a convex lens. As a result, the light caused by the concave curved interface 301 is diverged, and the light caused by the semi-elliptical shape 202 is concentrated, so that the light intensity of the light emitted from the central portion of the optical adjustment structure 200 is smaller than the sides of the central portion. The light intensity, so the light intensity increases from the center to the sides until a peak is reached, and since the light that is directed toward the semi-elliptical sphere 202 is relatively small (the large-angle light of the light-emitting wafer 102 is relatively small), the semi-elliptical sphere 202 is added. The light passing through it converges, so when the light intensity of the optical adjustment structure 200 reaches a peak, the light intensity starts to weaken, so the light shape distribution in the horizontal viewing direction, that is, the long axis direction (X-axis in the fourth figure) is a batwing. Batwing Contribution (as shown in Figure 9).

Of course, adjusting the width L of the concave surface 201 can adjust the brightness intensity of the central portion of the batwing shape. It can also be seen from the above that the concave curved interface 301 is similar to a concave lens, and therefore, by adjusting the curvature change of the semi-elliptical or semi-circular surface, or the length of the semi-ellipse, or the radius of the semi-circle, it also brings different curvatures. The curved arcuate interface 301 is recessed to create a batwing shape of a different shape.

As shown in FIG. 8B, the eighth B diagram schematically illustrates the ray path in the direction of the stub axis 204. As can be seen from the above, the light corresponding to the light emitted from the point light source 300 in the short-axis direction of the light-emitting diode 100 corresponds to a plane interface 302. At this time, the light emitted by the point light source 300 is refracted when passing through the planar interface 302, the light is concentrated, and the light intensity is weakened from the central portion to the periphery, as shown in the ninth figure, so that it is in the vertical viewing direction, that is, the short axis 204. The light shape distribution in the direction (ie, the Y-axis in the fourth figure) is the Lambertian Contribution.

Compared with the simple concentrated light shape of the existing LED, the light distribution of the present invention in the horizontal viewing direction is a batwing shape, and the light distribution in the vertical viewing direction is a Lambertian light shape. The light shapes of the above two viewing angles will make the light distribution more uniform after superposition.

Referring to the ninth figure, the light-shaped distribution of the LED in the horizontal viewing direction of the present invention is a Batwing Contribution, that is, the light distribution is not weakened from the center to the periphery, but is 0° to 50° and 0° to -50°. The phenomenon of increasing brightness in the range, but the light shape distribution in the direction of its vertical viewing angle is the Lambertian Contribution. In this way, after the superposition of the light shapes in the horizontal viewing angle direction and the vertical viewing angle direction, it is more advantageous to improve the uniformity of the light distribution.

Furthermore, the light intensity (the intensity of the 0 degree angle) of the normal vector of the overall light shape distribution of the LED of the present invention may be between 30% and 80% with respect to the maximum light intensity value (batwing strength), and The optimum value is about 50% to 70%, and the maximum intensity of light emitted by the LED 100 (the peak value of Batwing) falls between 30° and 70°, and the optimum value falls to about 45. Between ° and 55° for optimum uniformity.

Referring to the tenth and eleventh figures, for the backlight module, the LED as the light source adjusts the length of the long axis 203 and the short axis 204 in the optical adjustment structure 200, and adjusts the width L of the concave surface 201 to 1.5 mm, so that When the horizontal viewing angle is 120° and the vertical viewing angle is 80°, the light-emitting rate of the LED, that is, the optical coupling ratio can be increased to 92.6%. Of course, by adjusting the lengths of the long axis 203 and the short axis 204 in the optical adjustment structure 200, and the width L of the concave surface 201 and the curvature of the semi-elliptical slope, the improvement of the brightness uniformity of the LED can also be beneficial to eliminate the occurrence of the backlight module. Hotspot phenomenon.

The light-emitting diode 100 disclosed in the present invention utilizes a specially designed lens and a relative positional relationship between the lens, the lens and the wafer, thereby adjusting the light-emitting shape of the light-emitting diode to form a light having a non-circular symmetrical light shape. a diode, wherein the present invention can be further used as follows: a backlight unit for a display device (such as a panel, a television, or a screen), a reflective sheet, and a backlight unit A diffusing plate above the reflecting plate and a plurality of light emitting diodes 100 of the present invention disposed between the reflecting plate and the diffusing plate. The light generated by the light emitting diode 100 is scattered by the diffusing plate to the display panel, and the reflecting plate below the light emitting diode 100 can reflect the light scattered downward by the light emitting diode 100 to the diffusing plate to effectively utilize the light emitting. The light emitted by the diode 100. In addition, the height and width ratio of the two adjacent light-emitting diodes 100 are between 0.5 and 1, so that the backlight module composed of the light-emitting diode 100 of the present invention can be effectively reduced. The number of light-emitting diodes meets the light intensity and uniformity requirements of the backlight module.

Referring to FIG. 12, a light emitting diode (LED) lamp 400 includes a light transmissive tube 401, a long strip circuit board (not shown), and a plurality (multiple) of the present invention. A light-emitting diode (LED) 100 is disposed on the circuit board as a light source and is nested in the light-transmitting light tube 401. Since the light-emitting diode 100 of the present invention has a more uniform light distribution, it can be eliminated. Generally, the phenomenon of glare of a light-emitting diode (LED) lamp.

Since the light distribution curve of the light-emitting diode 100 of the present invention has a batwing shape in a horizontal viewing angle direction, the light distribution curve in the vertical viewing direction is a Lambertian light-shaped distribution, so that the light distribution of the light-emitting diode 100 is non-circular. The symmetrical light shape, by adjusting the lengths of the major axis 203 and the minor axis 204 of the semi-elliptical spherical shape 202 and the curvature L of the concave surface 201 and the curvature of the semi-elliptical slope, makes the overall light shape of the light-emitting diode 100 nearly asymmetric Elliptical shape to match the light shape used by the projector, and can produce a close ratio of 16:9. Compared to previous LEDs, an integration tunnel or microlens array (Micro) must be used. The -Lens array technique is used to convert a symmetric circular shape into an asymmetric elliptical shape. On the one hand, the invention does not increase the volume of the projection, and on the other hand does not increase the optical path to avoid loss of light.

The material that can be used for the optical adjustment structure 200 may be plexiglass (polymethyl methacrylate, PPMA), epoxy resin, silicone rubber, glass or polycarbonate, but is not limited to the above.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the content of the invention and the description of the invention are generally made. All remain within the scope of the scope of application of the present invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.

[Practical]

10. . . Backlight module

11. . . White light diode

【this invention】

100. . . Light-emitting diode

101. . . Pedestal

102. . . Light emitting chip

1021. . . Long side

1022. . . Short side

103. . . Sealing layer

104. . . Depression

105. . . Bottom

106. . . Side wall surface

1061. . . Long side wall

1062. . . Short side wall

107. . . Conductive terminal

109. . . Fluorescent powder

200. . . Optical adjustment structure

201. . . Concave surface

2011. . . Semi-elliptical bevel

2012. . . Semi-elliptical bevel

202. . . Semi-elliptical sphere

203. . . Long axis

204. . . Short axis

300. . . point Light

301. . . Concave curved interface

302. . . Flat interface

400. . . Light-emitting diode tube

401. . . Light-transmissive tube

L. . . width

WS1. . . Short width

WS2. . . Short width

WL1. . . Longitudinal width

WL2. . . Longitudinal width

Θ1. . . angle

The first figure is a schematic diagram of a conventional backlight module;

The second figure is a coordinate diagram simulating the ratio of reflectance to incident angle in a backlight module for a conventional light-emitting diode;

The third figure is a structural diagram of the light-emitting diode of the present invention;

The fourth figure is a top view of the light emitting diode of the present invention;

Figure 5 is a structural view of a pedestal of a light-emitting diode of the present invention and a light-emitting chip;

Figure 6 is a schematic view showing the illuminating wafer of the present invention housed in a recessed portion of the susceptor;

7A is a top view of the light emitting chip and the recess;

Figure 7B is a cross-sectional view of the light-emitting chip and the depressed portion;

Figure 8A is a cross-sectional view of the invention along the long axis direction of the optical adjustment structure, and illustrates the basic optical path;

Figure 8B is a cross-sectional side view of the invention along the short axis direction of the optical adjustment structure, and illustrates the basic optical path;

Figure 9 is a light distribution curve diagram of a horizontal viewing angle and a vertical viewing angle of the light-emitting diode of the present invention;

The tenth figure is a distribution diagram of the optical coupling ratio and the horizontal viewing angle of the light-emitting diode of the present invention;

11 is a distribution diagram of optical coupling ratio and vertical viewing angle of the light-emitting diode of the present invention;

Figure 12 is a schematic view showing the application of the light-emitting diode of the present invention to a lamp tube.

100. . . Light-emitting diode

101. . . Pedestal

200. . . Optical adjustment structure

201. . . Concave surface

2011. . . Semi-elliptical bevel

2012. . . Semi-elliptical bevel

202. . . Semi-elliptical sphere

Claims (27)

A light-emitting diode comprising: a pedestal having a recessed portion; an illuminating wafer disposed in the recessed portion; an adhesive layer filling the recessed portion; and an optical adjustment structure disposed on the light-emitting chip Upper, the optical adjustment structure is a semi-elliptical sphere, and the top surface of the semi-elliptical sphere is indented and has a concave surface and is connected to the surrounding semi-elliptical sphere; wherein the horizontal viewing angle of the LED has a first light distribution The vertical viewing angle of the light emitting diode has a second light shape distribution different from the second light shape distribution. The light-emitting diode according to claim 1, wherein the first light-shaped distribution is a batwing light shape, and the second light-shaped distribution is a Lambertian light shape. The light-emitting diode according to claim 1, wherein the concave surface is composed of two identical semi-elliptical inclined surfaces or semi-circular inclined surfaces. The light-emitting diode according to claim 1 or 3, wherein the concave surface has a concave curved interface along a long axis direction of the semi-elliptical spherical shape, and a short axis direction along the semi-elliptical spherical shape The cross section is a flat interface. The light-emitting diode according to the fourth aspect of the invention, wherein the semi-elliptical shape has a convex shape along a length of the long and short axes. According to the light-emitting diode of claim 1, wherein The concave surface is disposed above the luminescent wafer in alignment with its geometric center position. The light-emitting diode according to the first aspect of the invention, wherein the outer edge contour of the recess corresponds to the light-emitting chip profile. The light-emitting diode according to the seventh aspect of the invention, wherein the recessed portion and the light-emitting chip are rectangular cubes. The light-emitting diode according to claim 1, wherein the depressed portion comprises two parallel and spaced long side wall faces and two parallel and spaced short side wall faces, the circumferential surface of the wafer Comprising two parallel and spaced apart long sides and two parallel and spaced short sides, the short sides of the wafer being parallel to the short side faces of the recesses, and the long sides of the wafer being parallel to the recesses Long side wall surface. The light-emitting diode according to claim 9, wherein a difference between a short-direction width between the long side wall faces and a short-direction width between the long side faces is less than 0.6 mm; between the short side wall faces The difference in the lengthwise width between the long-direction width and the short side is less than 0.6 mm. The light-emitting diode according to claim 3, wherein the curvature of the semi-elliptical or semi-circular slope is adjustable. The light-emitting diode according to claim 3, wherein the length of the semi-elliptical slope is adjustable; the radius of the semi-circular slope is adjustable. The light-emitting diode according to claim 1, wherein the sealant layer covers a top surface and a peripheral surface of the light-emitting chip. The light-emitting diode according to claim 1, wherein the sealant layer further comprises a phosphor powder for wavelength conversion. The light-emitting diode according to claim 1, wherein the light-emitting diode has a maximum light intensity of 30° to 70°, and the light intensity of the normal vector is the maximum light intensity value. 30 to 80 percent. The light-emitting diode according to claim 15, wherein the light-emitting diode has a maximum light intensity of 45° to 55°, and the light intensity of the normal vector is the maximum light intensity value. 50 to 70 percent. The light-emitting diode according to claim 1, wherein the overall shape of the light-emitting diode is an asymmetrical elliptical light shape. A backlight module includes a reflector, a diffuser, and a plurality of light-emitting diodes disposed between the reflector and the diffuser as described in claim 1. The backlight module of claim 18, wherein the first light shape distribution of the light emitting diodes is a batwing light shape, and the second light shape distribution is a Lambertian light shape. The backlight module of claim 18, wherein the light intensity of the light emitting diodes is between 30° and 70°, and the light intensity of the normal vector is the maximum light intensity value. 30 to 80 percent. The backlight module of claim 18, wherein the light-emitting diodes have a maximum light intensity of 45° to 55°. The light intensity of the normal vector is between 50 and 70 percent of the maximum light intensity value. The backlight module of claim 18, 19, 20 or 21, wherein any two adjacent light-emitting diodes are disposed at a height to width ratio of between 0.5 and 1. A light-emitting diode lamp comprising a plurality of light-emitting diodes as described in claim 1 of the patent application. The light-emitting diode lamp of claim 23, further comprising a light-transmitting tube and a long strip of circuit board, wherein the light-emitting diodes are disposed on the circuit board and nested in the The light-transmitting tube is inside. The light-emitting diode lamp of claim 23, wherein the first light-shaped distribution of the light-emitting diodes is a batwing shape, and the second light distribution is Burt light shape. The light-emitting diode lamp of claim 23, wherein the light-emitting diodes have a maximum light intensity of 30° to 70°, and a normal vector light intensity is a maximum light intensity. 30% to 80% of the value. The light-emitting diode lamp of claim 23, wherein the light-emitting diodes have a maximum light intensity of 45° to 55°, and a normal vector light intensity is a maximum light intensity. 50% to 70% of the value.