200813577 九、發明說明： 【發明所屬之技術領域】 本發明係涉及液晶顯示裝置，更詳細地說，本發明係 涉及將檢測外光的光感測器組裝於液晶顯示面板中的液晶 顯示裝置。 【先前技術】 近年來，不僅資訊通信設備，而且普通的電子設備也 採用薄型顯示面板，其中，使用最多的是液晶顯示面板。 在該液晶顯示面板中，由於液晶爲非發光體，故在暗處， 難以看到顯示圖像，因此，設置背照燈或側照燈（在下面 將兩者統稱爲「背照燈等」），在外光較暗時點亮該背照 燈等，可辨認顯示圖像。 但是，由於在手動操作的情況，對應於外光的明暗， 每次必須進行背照燈等的開/關操作，故該操作繁雜，另 外，仍有即使在明亮時卻不必要地點亮著背照燈的情況， 故不必要的耗電量增加，在用於行動電話等的情況，會使 電池的耗電速度變快。 於是，爲了解決這樣的問題點，而開發了下述的技術， 其中在液晶顯示面板中組裝光感測器，藉由該光感測器以 檢測外光的明暗，根據其檢測結果而控制背照燈等的開/關 (參照下述的專利文獻1〜3 )。 譬如，在下述的專利文獻1中記載的液晶顯示裝置 中，採用薄膜電晶體（TFT: Thin Film Transistor)作爲光 200813577 感測器，將此TFT光感測器與用作爲液晶顯示面板之開關 元件的TFT同時地製成，另外，在下述的專利文獻2中記 載的液晶顯示裝置中，在面板基板上，設置外光照度檢測 感測器和背照燈照度檢測感測器，根據兩個感測器的檢測 結果，控制背照燈等，另外，在下述的專利交獻3中記載 的液晶顯示裝置中，光感測器設置於與液晶的周邊驅動電 路和離外部端子較遠的部位，此感測器不會受到這些驅動 電路等產生的高頻雜訊、發熱等的影響。 專利文獻1 : JP特開2002— 1 3 1 7 1 9號文獻（申請專利 範圍，[0010]〜[0013]段，第1圖） 專利文獻2: JP特開2000 — 122575號文獻（[0013]〜 [0016]段，第4圖） 專利文獻3 : JP特開平1 1一 84426號文獻（[0019]〜 [0022]段，第1圖，第2圖） 專利文獻4 : JP特開平1 — 143257號文獻（申請專利 範圍，第3圖） 專利文獻5 : JP特開平5 — 95 1 00號文獻（[〇〇 1〇]段， 第1圖） 【發明內容】 【發明要解決的課題】 TFT光感測器具有下述的特性，其中，在未遇到光時， 在其閘極截止（Gateoff)區域，流有微量的拽漏電流.（無光 照電流），在遇到光時，流有與其光強度（亮度）相對應 200813577 之大小的洩漏電流（漏電流）。另外，由於此TFT光感測 器係利用此洩漏電流以檢測外光的亮度，因此此洩漏電流 極微弱，導致TFT光感測器的輸出容易受到外部雜訊的影 響。 因此，如果將上述光感測器組裝於液晶顯示面板的一 個基板，譬如，主動矩陣基板（也稱爲“陣列基板”）上， 則在此主動矩陣基板上，設置有驅動液晶的周邊驅動電路 和外部端子等，來自於這些電路等的高頻信號和發熱對光 感測器會造成影響。在這一點，在上述專利文獻3的液晶 顯示裝置中，光感測器係設置於離產生高頻信號或發熱的 周邊電路和端子部較遠的部位，而不會受到這樣的雜訊的 影響。但是，在光感測器中，至少在TFT光感測器上連接 、有電源線、輸出線等引線，這些引線圍繞在顯示部的周邊， :因此，這些引線中，尤其是輸出線容易受到外部雜訊的影 響。另外，由於在此輸出線與共通電極之間產生寄生電容， 故此輸出線恐有受到施加於對向基板之共通電極上的對向 電極電壓（在下面稱爲“ VCOM電壓”）的影響。另外’ 光感測器也直接受到VCOM電壓的影響。 另外，由於這種光感測器容易受到外部雜訊的影響’ 故有公知的在主動矩陣基板上設置靜電遮蔽膜的感測器 (參照上述專利文獻4，5 )，但是這些光感測器係在主動 矩陣基板和閘極配線之間設置靜電遮蔽用的導電膜和絕緣 膜，如果設置這樣的導電膜時，則在主動矩陣基板上形成 200813577 光感測器時，必須要求於通常的製造步驟中添加特別的步 驟’而導致製造步驟繁雜，因而整體的成本變高。 本發明是爲了解決這樣的先前技術所具有的課題而提 出的，本發明之目的在提供一種液晶顯示裝置，其中光感 測器係以不致受到外部雜訊和周邊電路的影響的方式，而 組裝於液晶顯不面板上。 此外，本發明的另一目的在提供一種液晶顯示裝置， 其中光感測器和從該光感測器引出的輸出線係以不致受到 外部雜訊和周邊電路的影響的方式而組裝。 還有，本發明的另一目的在提供一種液晶顯示裝置， 其不需要增加液晶顯示面板的製造步驟，而可簡單地對光 感測器和輸出線進行靜電遮薇。 【用於解決課題的方案】 爲了實現上述目的，本發明的液晶顯示裝置的發明， 係包括有：液晶顯示面板，在主動矩陣基板與對向基板之 間設置有液晶層；光檢測部，具有設置於上述主動矩陣基 板上用於檢測外光的光感測器；輸出線，導出來自上述光 檢測部的輸出信號；供給一定電壓的電源線；照光機構， 根據上述光檢測部的輸出進行控制，其特徵在於：上述光 感測器經由透明絕緣層而由透明電極覆蓋，上述透明電極 與上述電源線作電性連接。 按照本發明時，光檢測部的光感測器經由透明電極覆 蓋，另外，此透明電極的電位係以一定電壓而穩定。因此， 200813577 透明電極起靜電遮蔽的作用，使光感測器不易受到外部雜 訊和周邊電路的影響，這樣，能以高靈敏度地檢測外光， 使控制照光機構時的誤動作減少。另外，在本發明中，光 感測器可採用TFT、光電二極體等眾所周知的感測器。 另外，本發明的液晶顯示裝置的發明之特徵在於，上 述光感測器係由薄膜電晶體形成，上述透明電極從平面 看，覆蓋上述薄膜電晶體的源極和汲極的對向部分。 • 按照上述發明，由於光感測器採用TFT，從平面看， 藉由透明電極覆蓋TFT的源極和汲極的對向部分，故可有 效地對容易受到外部雜訊和周邊電路的影響之屬光感測器 的TFT進行靜電遮蔽。 另外，本發明的液晶顯示裝置的發明之特徵在於，上 述源極和汲極係配置成互相形成梳齒狀，相互間隔一定距 灕地而嚙合。 按照上述發明時，由於用作TFT的光感測器的通道區 ® 域變大，故可在較寬範圍檢測光，並且提高光檢測靈敏度。 此外，本發明的液晶顯示裝置之發明的特徵在於，上 述薄膜電晶體的表面由平坦化膜覆蓋，上述透明電極形成 於上述平坦化膜的表面上，並且經由設置於上述平坦化膜 和透明絕緣層上的接觸孔，與上述電源線電性連接。 按照上述發明時，由於TFT、透明絕緣膜、平坦化膜、 透明電極均可與裝載於主動矩陣基板上的主動元件和顯示 部的像素電極等形成的同時而形成，故不必特別爲了形成 -10 - 200813577 迨些結構而增加製造工時。 還有，本發明的液晶顯示裝置的發明的特徵在於，上 述電源線和輸出線中的至少輸出線，係經由上述透明絕緣 層而由上述透明電極覆蓋，並且上述透明電極藉由形成於 上述透明絕緣層上的接觸孔，與上述電源線作電性連接。 按照上述發明時，由於與光感測器連接的電源線和輸 出線中的至少輸出線係藉由透明電極而覆蓋而實現靜電遮 • 蔽，並且透明電極藉由形成於透明絕緣層上的接觸孔與電 源線電性連接，故即使在對向基板的VCOM電壓有較大變 化的情況下，仍可防止該VCOM電壓對有微弱輸出信號流 動的輸出線造成影響。 另外，本發明的液晶顯示裝置的發明的特徵在於2條 電源線平行地設置，上述輸出線設置於上述2條電源線之 按照上述發明，由於輸出線藉由2條電源線和透明電 極圍繞而實現靜電遮蔽，故輸出線受到尤其是從基板的水 平方向侵入之外部雜訊的影響較少。另外’按照此構成時’ 由於在電源線和輸出線之間形成電容器’可藉由該電容器 電容而防止在輸出線和設置於對向基板上的共通電極之間 產生寄生電容的情況’因此可以減少受到從輸出線輸出的 輸出信號施加於共通電極上之電壓的影響的危險。 再有，本發明的液晶顯示裝置的發明的特徵在於在上 述電源線上，第1透明絕緣層、上述輸出線、第2透明絕 -11- 200813577 緣層、和上述透明電極係按照此順序’從平面看時上述電 源線、上述輸出線、和上述透明電極重疊的方式疊層設置’ 並且上述透明電極藉由形成於上述第1和第2透明絕緣層 上的接觸孔而與上述電源線連接。 按照上述發明時，由於輸出線夾持於電源線和透明電 極之間而實現靜電遮蔽，同時透明電極藉由形成於第1和 第2透明絕緣層上的接觸孔而與電源線電性連接，故即使 在因透明電極而使對向基板的VCOM電壓有較大變化的情 況下，仍可防止該VCOM電壓對流有微弱之輸出信號的輸 出線的影響。另外，受到經由電源線而從基板的上下方向 侵入的外部雜訊等的影響的情況變少。 另外，本發明的液晶顯示裝置的發明的特徵在於與上 述電源線和上述透明電極之長度方向相垂直的方向之寬 度，係作成大於上述輸出線的柑同方向的寬度。 按照上述發明時’由於電源線和上述透明電極的寬 度’係作成大於輸出線的寬度，輸出線的外周圍藉由電源 線和透明電極而廣泛地覆蓋，故更能發揮遮蔽效果。 此外’本發明的液晶顯示裝置之發明的特徵在於，上 述電源線與作爲形成於上述主動矩陣基板上的液晶顯示面 板之開關兀件的薄膜電晶體之閘極，係以相同的材料形 成，上述輸出線與作爲上述開關元件的薄膜電晶體的源極 和汲極係以相同的材料形成，上述透明電極與上述液晶顯 示面板的像素電極係以相同的材料形成。 -12- 200813577 按照上述發明時，電源線與用作液 元件的薄膜電晶體的閘極、輸出線與該 和汲極、透明電極與液晶顯示面板的像 相同的材料形成，因此可以不需要另外 形成這些佈線等，並且可不增加液晶顯 來形成這些佈線等。 還有，本發明的液晶顯示裝置的發 • 述電源線係以夾設上述透明絕緣層，從 輸出線上的方式而疊層配置。 按照上述發明時，由於輸出線藉由 遮蔽，故即使在因電源線而使對向基板 大變化的情況下，仍可防止該VCOM電 信號流動之輸出線的影響。 再有，本發明的液晶顯示裝置之發 上述電源線的長度方向相垂直的方向的 •上述輸出線的相同方向的寬度。 按照上述發明時，由於電源線的寬 線的寬度，使輸出線的上方藉由電源線 更能發揮遮蔽的效果。 另外，本發明的液晶顯示裝置的發 述輸出線與作爲形成於上述主動矩陣基 板之開關元件的薄膜電晶體之源極和汲 形成，上述電源線與液晶顯示面板的像 晶顯示面板的開關 薄膜電晶體的源極 素電極，係分別以 準備不同的材料來 示面板的製造步驟 明的特徵在於，上 平面看重疊於上述 電源線而貫現靜電 的VCOM電壓有較 壓對有微弱之輸出 明的特徵在於，與 寬度，係作成大於 度係作成大於輸出 而廣泛地覆蓋，故 明的特徵在於，上 板上的液晶顯示面 極係以相同的材料 素電極係以相同的 -13- 200813577 材料形成。 按照上述發明時，輸出線與作爲液晶顯示面板之開關 .元件的薄膜電晶體之源極和汲極、電源線與像素電極，係 分別以相同的材料形成，因此可以在不需要另外準備不同 材料的情況下，形成這些佈線，並且可在不增加液晶顯示 面板的製造步驟的情況下，形成兩條佈線。 此外’本發明的液晶顯示裝置的發明的特徵在於，上 • 述輸出線與作爲形成於上述主動矩陣基板上的液晶顯示面 板之開關元件的薄膜電晶體之閘極係以相同的材料形成， 上述電源線與作爲上述開關元件的薄膜電晶體之源極和汲 極係以相同的材料形成。 按照上述發明時，輸出線與作爲液晶顯示面板之開關 元件的薄膜電晶體之閘極、電源線與上述薄膜電晶體的源 極和汲極，係分別以相同的材料形成，因此可以在不需要 另外準備不同材料的情況下，形成這些佈線，並且可在不 胃增加液晶顯示面板的製造步驟的情況下，形成兩條佈線。 還有’本發明的液晶顯示裝置的發明的特徵在於，上 述.電源線和輸出線與形成於上述主動矩陣基板上作爲液晶 顯示面板之開關元件的薄膜電晶體，在製作步驟上可同時 地形成。 按照上述發明時，由於電源線和輸出線均可與裝載於 主動矩陣基板上的主動元件和顯示部的像素電極等之形成 的同時而形成，故不必特別爲了形成這些結構而增加製造 -14 - 200813577 工時。 再有，本發明的液晶顯示裝置的發明的特徵在於，上 述光感測器係由薄膜電晶體和電容器形成。 另外，本發明的液晶顯示面板之發明的特徵在於，上 述薄膜電晶體的源極係與上述電容器的一方之電極連接， 又與上述輸出線連接，而電容器中的另一方之電極係與上 述電源線連接。 按照上述發明時，由於在輸出線和有一定電壓的電源 線之間具有電容器，而可抑制急遽的電壓變化，故即使在 對向基板的VCOM電壓有較大變化的情況下，仍可避免其 對輸出線之信號的影響。 此外，本發明的液晶顯示裝置的發明的特徵在於，在 上述薄膜電晶體的閘極上，施加規定的負電壓，上述薄膜 電晶體的源極係與上述電容器中的一個電極連接，藉由開 關元件而與基準電壓供給源連接，藉由使上述開關元件處 於導通狀態，以對上述電容器進行充電。 按照上述發明時，形成以下的電路結構，即在薄膜電 晶體的閘極上，施加規定的負電壓，薄膜電晶體的源極係 與電容器中的一個電極連接，同時藉由開關元件而對基準 電壓進行充電，因此可構成申請專利範圍第1 5項和申請專 利範圍第1 6項所述的光檢測電路。 【實施方式】 下面將參照附圖，對用於實施本發明的較佳形態進行 -15- 200813577 說明，但是在下面描述的實施例爲僅例示用於具體實現本 發明的技術構思的液晶顯示裝置，其無意將本發明特定爲 此實施例，本發明在對不脫離其申請專利範圍所給出的技 術構思的情況下進行各種變更而得到的方案，亦可等同地 適用。 實施例1 第1圖爲透視本發明的實施例1的液晶顯示面板的彩 色濾光片基板而表示的TFT基板的示意俯視圖。 液晶顯示面板1如第1圖所示，包含具有由相互對向 配置的矩形之透明材料，譬如玻璃板形成的一對主動矩陣 基板（在下面稱爲“ TFT基板” ）2和彩色濾光片基板CF， TFT基板2係採用尺寸大於彩色濾光片基板CF的基板，使 得在與彩色濾光片基板CF對向時形成規定空間的伸出部 S ’在此等TFT基板2和彩色濾光片基板CF的外周圍，貼 附有密封材料，在內部密封有液晶和間隔件。 在TFT基板2和彩色濾光片基板CF上的對向面側，形 成有各種佈線等。其中，在彩色濾光片基板CF上設置：黑 色矩陣’配合於TFT基板2的像素區域，設置成矩陣狀； 如紅（R )、綠（G )、藍（B )等彩色濾光片（圖示省略）， 設置於由該黑色矩陣所圍繞的區域；及共通（common)電 極’設置成覆蓋與TFT基板2側的電極電性連接，且覆蓋 彩色濾光片。另外，未圖示出的背照光係設置於TFT基板 2的背面上’藉由來自光檢測部ls的輸出信號而控制。 -16- 200813577 TFT基板2具有分別對向的短邊2a、2b和長邊2c、2d， 一側之短邊2b側構成伸出部S，在此伸出部S上裝載源極 驅動器和閘極驅動器用半導體晶片Dr，在另一側短邊2a 側，則設置光檢測部LS。 此TFT基板2，在其表面，即與液晶接觸的面上，具 有沿第1圖的列方向（橫向）以規定間距排列的多條閘極 線GWi〜GWn ( n = 2，3，4，…）；與這些閘極線GW!〜GWn φ 絕緣，沿列方向（縱向）排列的多條源極線SW i〜S W m ( m =2，3，4，···）：這些源極線SW!〜SWm與閘極線GW]〜 GWn呈矩陣狀佈線，在由相互交叉的閘極線GW 1〜GWn和源 極線SWi〜SWm圍繞的各區域，形成藉由來自閘極線GWi 〜GWn的掃描信號而導通的開關元件（圖示省略），和藉 由開關元件而供給來自源極SWi〜SWm之圖像信號的圖像 電極。 由閘極線GWi〜GWn及源極線SW!〜SWm圍繞的各區域 ® 構成所謂的像素，形成這些像素的區域構成顯示區域DA， 即圖像顯示部。開關元件採用，譬如薄膜電晶體（TFT )。 各閘極線GWi〜GWn及源極線SW!〜SWm向顯示區域 DA之外延伸，環繞於顯示區域DA外的外周邊的區域，而 與源極驅動器和閘極驅動器用半導體晶片Dr連接。另外， TFT基板2在一方之短邊2a側設置光檢測部LS，另外在長 邊2d側設置從該光檢測部LS導出的伸出佈線L〇、L，這些 伸出佈線L、L〇與連接外部控制電路的端子I，T2連接。 -17- 200813577 另外，形成光檢測部LS和伸出佈線L、L〇的區域，即，由 第1圖的斜線所表示的區域爲遮蔽結構。關於此遮蔽結 構，將在後面進行描述。 下面參照第1圖〜第4圖，對光檢測部LS和伸出佈線 L、L。的結構進行描述。另外，第2A圖爲光檢測部的等效 電路圖，第2B圖爲說明施加於共通電極上的VCOM電壓與 感測器輸出之間的關係的波形圖，第3圖爲光檢測部的剖 視圖，第4圖爲沿第1圖中之IV— IV線的剖視圖。 光檢測部LS，如第2A圖所示，具有下述電路結構， 其中，在TFT光感測器的汲極和源極St之間，並聯有 電容器C，源極31^和電容器C中的一方之端子藉由開關元 件SW與基準電壓源Vs連接，汲極EK和電容器C的另一 端子與基準電壓源Vref連接。此基準電壓源Vref爲恒定的 直流電壓源。另外，在閘極Ge上，施加閘極截止電壓，譬 如，一 10V。此光檢測部LS的輸出係從作爲電容器C的一 個端子的源極St導出。 此光檢測部LS形成於TFT基板2上。即，如第3圖所 示，’在TFT基板2上，形成TFT光感測器的閘極Ge、電容 器C中的一個端子Ci，以覆蓋此等之表面的方式而疊層由 氮化矽、氧化矽等形成的閘極絕緣膜3。在TFT光感測器 的閘極Gt之上，藉由閘極絕緣膜3而形成由非晶貧矽、多 晶矽等形成的半導體層4，另外，在閘極絕緣膜3上，係 以和半導體層4電性連接的方式設置由鋁，鉬等金屬形成 -18- 200813577 的TFT光感測器的源極St和汲極De。其中，TFT光感測器 的源極Si延長，形成電容器C的另一端子C2。另外，作成 以覆蓋TFT光感測器和電容器C的表面的方式，而疊層配 置由譬如無機絕緣材料形成的保護絕緣膜5，另外，在其 上形成由透明材料形成的導電膜（ITO ) 6。此導電膜6係 液晶驅動用的像素電極所延設者。 此TFT光感測器在液晶顯示面板的製造步驟中，與作 • 爲開關元件的TFT同時地形成。因此不需要爲了設置光檢 測部LS而增加製造工時。另外，TFT光感測器也可不只爲 1個而採用多個，使此等於短邊2a側設置成一排。多個TFT 光感測器設置於短邊成一排，因此，即使在使用者因不小 心用手指等遮擋一部分的TFT光感測器的情況下，因爲同 時遮擋全部的TFT光感測器的情況較少，因此可藉由未遮 擋的TFT光感測器來進行光的檢測。此光檢測部LS係形成 於顯示區域DA的外周緣，即，形成於設在密封材料塗布 • 區域的內側與液晶層接觸的部位。另外，也可形成在密封 區域的外側。從此光檢測部LS，分別引出與汲極Dl連接 的電源線L和與源極Se連接的輸出線L。。另外，與閘極 Gl連接的伸出線也從此光檢測部LS引出，雖然這一點圖 示中省略。 引出佈線L，L。之中’電源線L如圖1所示，在由短 邊2a和長邊2d圔繞的角部附近由符號11表示的位置，分 成2條，此分支的各電源線Ll，L2在長邊2d側，跨過輸出 -19- 200813577 線L〇而沿著輸出線L〇佈線。即，如第1圖所示，分支的2 個電源線Li，L2採用長邊2d側的空間而設置於輸出線乙。 的兩側並環繞到伸出部S之後，結合於由符號t2表示的位 置，而與端子Ti連接。另外，符號tl，t2表示分支連接點。 分支的電源線L!，L2和輸出線L〇的剖面結構，如第4 圖所示，爲下述結構，其中，在設置於TFT基板2上的閘 極絕緣膜3上，以輸出線L〇爲中心，在兩側設置以規定間 距而分支的電源線L!，L2，此2條電源線b，L2由保護絕 緣膜5覆蓋，在其上形成由透明材料形成的導電膜（ITO) 6。另外，在保護絕緣膜5上的任意的部位形成接觸孔，各 電源線L!，L2和導電膜6利用此接觸孔作電性連接。另外， 導電膜6連接於基準電壓源Vref。 如此，輸出線L。的周圍由各電源線b，L2和導電膜6 覆蓋，它們與基準電壓源Vref連接，藉此對輸出線L。進行 靜電遮蔽，而使其不受到外部雜訊的影響。另外，在輸出 線L〇與各電源線L、L!、L2之間，形成第2圖所示的電容 器C的電容器容量的一部分，由於輸出線L。與電源線L、 Lr L2沿TFT基板2的長邊2d設置，故其電容較大。另外， 電源線L、L1、L 2和輸出線L。在液晶顯示面板1的製造步 驟中，與TFT光感測器的源極Su和汲極Dl同樣地，係和 作爲開關元件的TFT之源極線SWi〜SWm以相同的材料形 成。因此，由於可在形成這些引線L、Ld〜L2時，與作爲開 關元件的TFT之源極線SW/〜SWm形成步驟同時地形成， -20- 200813577 故可在不需要增加步驟數的情況下，簡單地形成。 另外’雖然在這裏電源線L係以分支成2條的實例 示，但是也可採用下述的結構，其中預先使2條電源線L L2平行於輸出線L。而設置，藉由設置於保護絕緣膜5上 接觸孔，使2條電源線Li，L2分別與導電膜6作電性連接 下面參照第2圖，對光檢測部L s的動作進行描述。 首先，由基準電壓源Vref向汲極DL·上施加一定的 流電壓（譬如，0V )，並且在TFT光感測器的閘極Gl上 加一定的負電壓（譬如，一 10V )，使開關元件SW處於 定時間（譬如，參照第2B圖的（2 ))的導通（ON)狀態 在電容器C上施加一定的基準電壓Vs(譬如，+ 2V)， 此電容器C進行基準電壓Vs和來自基準電壓源Vref的 流電壓的電壓差Va的充電。此時，在彩色濾光片基板 的共通電極上，施加如第2B圖的（1)所示，由具有規 的振幅的矩形波形成的VC0M電壓。在此狀態，如果外 照射到TFT光感測器上，則在TFT光感測器中洩漏電流 動，使電容器C的充電電壓的一部分放電，此放電量對 於周圍的亮度而隨著時間增加，因此扣除了此放電之電 的電容器C之充電電壓，即輸出電壓Vs’如第2B圖的（ 所示（另外，在第2圖中，簡單地以直線表示）形成放 曲線而成爲降低後的電壓。另外，此輸出電壓Vs’藉由 中未示的輸出讀取部加以讀取，以進行背照燈的控制。 按照此實施例1時，在輸出線L〇的兩側各設置電源 直 施 規 ， 對 直 CF 定 光 流 應 壓 3 ) 電 圖 線 -21- 200813577 、L2，並且輸出線L〇和各電源線L!、L2藉由保護絕緣膜 5而以導電膜6進行覆蓋，更使電源線L、Li、L2中的任意 一條與導電膜6作電性連接，因此導電膜6與基準電壓源 Vref連接，故可使輸出線La實現靜電遮蔽，而可抑制外部 雜訊的影響。 此外，藉由使形成於各電源線和輸出線之間的電容和 基準電壓源Vref爲一定的直流電壓，可獲得盡可能地不受 到VC0M電壓之影響的穩定後之輸出電壓Vs’ 。另外，如 果使基準電壓源Vref爲由矩形波形成的VCOM電壓而取代 一定的直流電壓之時，則其輸出電壓如第2B圖的（4)所 示，與VCOM電壓同步地降低而缺乏穩定性，難以進行讀 取部的讀取。另外，如果作成在基準電壓源Vref爲一定的 直流電壓的狀態未將輸出線L〇的周圍加以遮蔽的結構’則 由於會在輸出線L〇和共通電極之間產生寄生電容’而使輸 出電壓受到VCOM電壓的影響，如第2 ( B )圖的（5 )所 示，變成不穩定。 第5圖表示構成檢測部LS的光感測器的變形例’第 5A圖爲從CF基板的感測器窗透視，TFT基板上的光感測 器的示意俯視圖，第5B圖爲沿第5A圖之VB — VB線的剖 視圖。 光檢測部LS的TFT光感測器如第5B圖所示’首先在 TFT基板2上形成TFT光感測器的閘極Gl，此閘極Gl藉由 閘極絕緣膜3加以覆蓋，在覆蓋此閘極的閘極絕緣膜3 -22- 200813577 的正上方’形成半導體層4。另外，在閘極絕緣膜3上’ 設置與半導體層4接觸的汲極和源極心。此汲極h和 源極S ι如第5 A圖所示，分別具有規定間隙的梳齒狀的電 極片，按照其中一方梳齒狀的電極片進入另一方梳齒狀的 電極片之間的方式，形成於閘極絕緣膜3上。 其結果是，源極心的電極片和汲極的電極片交替地 設置。如此’藉由交替地配置各電極片，可擴大由各源極 Φ L和汲極1形成的通道，可在較寬的範圍進行外光檢測。 此半導體層 4、源極Se、和汲極Di從平面看，係設置於閘 極Gl的內側。藉由如此在閘極Gl的內側設置半導體層4、 源極Sl、和汲極Dl ，使來自TFT基板2背面的背照燈之 光被閘極Gl遮擋，而不致照射到半導體層4上。 另外，閘極CK係形成大於設置在CF基板上的感測器 窗。另外，該汲極Di、源極Sl、半導體層4和這些電極等 的周圍係藉由保護絕緣膜5覆蓋，而在此保護絕緣膜5上 ® 形成平坦化膜7。另外，此平坦化膜7的表面係藉由導電 膜6加以覆蓋。此外，在保護絕緣膜5和平坦化膜7上形 成接觸孔Η，汲極De和導電膜6係利用此接觸孔Η作電性 連接。因此，導電膜6與基準電壓源Vref連接。 如果採用此結構時，按照覆蓋形成於TFT基板2上的 TFT光感測器和輸出線L〇的方式，在它們之間夾設保護絕 緣膜5和平坦化膜7而形成導電膜6,此導電膜6藉由接觸 孔Η而與汲極De作電性連接，另外，此導電膜6與基準電 -23- 200813577 壓源Vref連接。因此’在施加於CF基板之共通電極上的 VCOM電壓和源極Sl與輸出線L〇之間’介設有與電源線L、 L!、L2連接的導電膜6 ’故可防止VCOM電壓對TFT光感 測器之輸出信號造成影響。 實施例2 第6圖爲以示意方式表示透視本發明的實施例2的液 晶顯示面板的彩色濾、光片基板的TFT基板的俯視圖，第7 圖爲沿第6圖中之VII — VII線的剖視圖。 此液晶顯示面板1A與實施例1的液晶顯示面板1相比 較，除了電源線和輸出線疊層佈線的方面以外，具有相同 的結構。因此，與實施例1共同的結構採用相同符號而省 略重複的說明，僅針對不同的結構進行說明。 在此液晶顯示面板1A中，來自光檢測部LS的電源線 L和輸出線L〇係使閘極絕緣膜3介設於其之間的方式進行 疊層。即，如第7圖所示，在TFT基板2上，在與閘極線 Gi相同的步驟設置電源線L，此電源線L藉由閘極線3覆 蓋，按照介設閘極絕緣膜3而與電源線L重疊的方式，在 與源極St和汲極De相同的步驟中，將輸出線L〇疊層，藉 由保護絕緣膜5將此等加以覆蓋，另外，在其上覆蓋由透 明材料形成的導電膜（ITO ) 6。 另外，在閘極絕緣膜3的一部分上設置接觸孔（圖示 省略），因此，電源線L連接到汲極Di。另外，在各絕緣 膜5，3上的任意部位，形成接觸孔（圖示省略），電源線 -24- 200813577 L和導電膜6係利用此接觸孔作電性連接。另外，藉由此 連接’導電膜6與基準電壓源v r e f連接。輸出線L。和源極 Si^以相同的材料，在同一製造步驟中一體地形成。此外， 電源線L與閘極化以相同的材料，在同一製造步驟中形 成。因此’該些各引線能簡單地形成。 如果依照此構成時，在輸出線L〇的正下方夾設閘極絕 緣膜3而設置電源線l，在正上方夾設保護絕緣膜5而設 Φ 置導電膜6，因此輸出線L。由導電膜6和電源線L所圍繞， 而實現靜電遮蔽。如果依照此構成時，尤其是可遮蔽來自 TFT基板2的正下方的雜訊。 雖然在第7圖所示的引線L、L。中係使輸出線L。和電 源線L的寬度基本上相同，但電源線L的寬度以大於輸出 線L。的寬度爲較佳。另外，第8圖表示第6圖所示的液晶 顯示面板的引線的變形實例，第8A圖爲第6圖的長邊（2d) 部分的佈線和引線的示意放大俯視圖，第8 B圖爲沿第8 A _ 圖中之VIIIB — VIIIB線的剖視圖。 當與本變形實例的電源線L和輸出線L。的長度方向相 垂直的方向的寬度爲…”…：時，作成使W2大於Wi。另外， 藉由具有比電源線L的寬度w2更寬的寬度W3的導電膜6, 來覆蓋輸出線L。。輸出線L。的上下藉由各絕緣膜3、5加 以覆蓋，在這些絕緣膜3、5中形成接觸孔Η，導電膜6與 電源線L藉由此接觸孔Η作電性連接。另外，藉由此連接， 導電膜6連接到基準電壓源Vref。藉由此結構，由於輸出 -25- 200813577 線L。的外周幾乎全周被寬度大的導電膜6和電源線L所覆 蓋，故遮蔽效果更進一步提高。 實施例3 第9圖爲從疊置於TFT基板上的彩色濾光片基板透視 本發明的實施例3的液晶顯示面板，看到下方的TFT基板 的佈線等而表示的示意性的俯視圖，第1 〇圖爲沿第9圖中 之X— X線的剖視圖。此液晶顯示面板1 B與實施例1的液 晶顯示面板1相比，除了電源線和輸出線疊層佈線的方面 以外，具有與實施例1的液晶顯示面板1相同的結構。於 是，與實施例1共同的結構採用相同的符號而省略重複說 明，僅針對不同的結構而進行描述。 此液晶顯示面板1 B具有下述的結構，即來自光檢測部 LS的輸出線L〇形成於閘極絕緣膜3上，由保護絕緣膜5 加以覆蓋，在此保護絕緣膜5上，形成與汲極Di連接的由 透明材料形成的導電膜（ITO ) 6。即，該導電膜（ITO ) 6 成爲電源線L，藉由端子1而與外部電路連接。如此，輸 出線L〇的上方藉由構成電源線L的導電膜（ITO )6而覆蓋， 藉此而對輸出線L。進行靜電遮蔽，故特別是可遮蔽來自 TFT基板2的正上方的雜訊。此輸出線.L。與源極L以相同 的材料在同一製造步驟一體地形成，作爲電源線L的導電 膜6係與液晶驅動用的像素電極同時地形成，並且其一端 部與汲極De連接。因此，各引線L、L〇能簡單地形成。 實施例4 -26- 200813577 第11圖爲從疊置於TFT基板上的彩色濾光片基板透視 本發明的實施例4的液晶顯示面板，看到下方的TFT基板 的佈線等而表示的示意性的俯視圖，第12圖爲第11圖之 XII — XII線的剖視圖。此液晶顯示面板1 C和實施例1的液 晶顯示面板1，除了電源線和輸出線疊層佈線的方面以外， 具有與實施例1的液晶顯示面板相同的結構。因此，與實 施例1共同的結構採用相同的符號，省略重複說明，僅針 • 對不同的結構而進行描述。 在此液晶顯示面板1 C中，如第1 1圖和第1 2圖所示， 輸出線L。形成於TFT基板2上，藉由閘極絕緣膜3而加以 覆蓋，在此閘極絕緣膜3上，從光檢測部LS的汲極Dt延 伸設置且寬度大於輸出線L。的電源線L係以覆蓋輸出線L。 的方式形成。另外，此電源線L藉由保護絕緣膜5而覆蓋。 此外，輸出線Ld藉由設置於閘極絕緣膜3上的圖中未示的 接觸孔而與源極L連接。 ® 如此，輸出線L〇的上方藉由電源線L覆蓋，而使輸出 線L。實現靜電遮蔽。因此，特別是可遮蔽來自TFT基板的 正上方的雜訊。此輸出線L。與閘極Gl係以相同的材料在同 一製造步驟中一體地形成，並且其一端藉由設置於閘極絕 緣膜3上的接觸孔而與源極Se連接。另外，電源線L與源 極和汲極Dl係以相同的材料在同一製造步驟一體地形 成，使汲極Dl延伸設置而形成。 另外，同樣在本實施例4中，亦使光檢測部LS的表面 -27- 200813577 由導電膜（ITO) 6加以覆蓋爲宜，另外，亦宜使此導電膜 (ΙΤ0 ) 6藉由設置於保護絕緣膜5等未圖示之接觸孔，而 與電源線L連接。 以上，雖然藉由以上的實施例對本發明進行了詳細描 述，但是本發明並不限定於此，具有本發明所屬技術領域 中通常知識的人員，可在不脫離本發明的構思和精神的情 況下進行修正或變更。譬如，光感測器可以不是薄膜電晶 φ 體，而採用其他的光感測器，例如光電二極體。另外，TFT 光感測器的動作電路並不限於第2A圖的形式，例如也可形 成下述的電路，其中係將源極Si與基準電壓源Vref連接， 並且將汲極Dl與基準電壓源Vs連接，將從TFT光感測器 輸出的光電流充電到電容器C中。 【圖式簡單說明】 第1圖爲透視本發明的實施例1的液晶顯示面板的彩 色濾光片基板而表示的TFT基板的示意俯視圖。 ^ 第2A圖爲光檢測部的等效電路圖，第2B圖爲說明施 加於共通電極上的VC0M電壓與感測器輸出之間的關係之 波形圖。 第3圖爲光檢測部的剖視圖。 第4圖爲沿第1圖中的IV — IV線之剖視圖。 第5圖表示構成光檢測LS的光感測器的變形例，第 5A圖爲從CF基板的感測器窗透視，而模式地表示TFT基 板上的光感測器的俯視圖，第5B圖爲沿第5A圖中的 -28- 200813577 V B — V B ’線之剖視圖。 第6圖爲透視本發明的實施例2的液晶顯示 色濾光片基板而表示的TFT基板的示意俯視圖。 第7圖爲沿第6圖中之VII — VII線的剖視圖 第8圖表示引線的變形例，第8A圖爲以示意 第6圖的長邊2b部分的佈線和引出線的俯視圖， 爲沿第8A圖中之VIIIB— VIIIB線的剖視圖。 第9圖爲從疊置於TFT基板上的彩色濾光片 本發明的實施例3的液晶顯示面板，看到下方的 的佈線等而表示的的示意俯視圖。 第1 0圖爲沿第9圖中之X— X線的剖視圖。 第11圖爲從疊置於TFT基板上的彩色濾光片 本發明的實施例4的液晶顯示面板，看到的下方 板的佈線等而表示的示意俯視圖。 第12圖爲沿第11圖中之XII — XII線的剖視 【主要元件符號說明】 面板的彩 方式表示 第8B圖 基板透視 TFT、基板 基板透視 的TFT基 圖。 1 ， 1A〜1C 液晶顯示面板 2 主動矩陣（TFT )基板 S 伸出部 3 閘極絕緣膜 5 保護絕緣膜 6 導電膜 LS 光檢測部 -29- 200813577 L〇 輸出線 L、L1、L 2 電源線 H 接觸孔 Vref 基準電壓源 Va 電壓差 Vs 基準電壓 Vs， 輸出電壓 30-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display device in which a photo sensor for detecting external light is incorporated in a liquid crystal display panel. [Prior Art] In recent years, not only information communication equipment but also ordinary electronic equipment has adopted a thin display panel, and among them, the liquid crystal display panel is the most used. In the liquid crystal display panel, since the liquid crystal is a non-light-emitting body, it is difficult to see the display image in a dark place, and therefore, a backlight or a sidelight is provided (hereinafter collectively referred to as "backlights, etc." ), when the external light is dark, the backlight or the like is illuminated, and the display image can be recognized. However, in the case of manual operation, it is necessary to perform an on/off operation of a backlight or the like each time corresponding to the brightness of the external light, so the operation is complicated, and the backlight is unnecessarily lit even when it is bright. In the case of a light, unnecessary power consumption increases, and when used in a mobile phone or the like, the power consumption of the battery is increased. Therefore, in order to solve such a problem, a technique has been developed in which a photo sensor is assembled in a liquid crystal display panel, and the photo sensor is used to detect the brightness of the external light, and the back is controlled according to the detection result thereof. The lighting or the like is turned on/off (see Patent Documents 1 to 3 below). For example, in the liquid crystal display device described in the following Patent Document 1, a thin film transistor (TFT: Thin Film Transistor) is used as the light 200813577 sensor, and the TFT photosensor and the switching element used as the liquid crystal display panel are used. In the liquid crystal display device described in the following Patent Document 2, an external illuminance detecting sensor and a backlight illuminance detecting sensor are provided on the panel substrate, according to two sensings. In the liquid crystal display device described in the following Patent Publication No. 3, the photosensor is provided in a peripheral drive circuit of the liquid crystal and a portion far from the external terminal. The sensor is not affected by high frequency noise, heat generation, etc. generated by these drive circuits. Patent Document 1: JP-A-2002- 1 3 1 7 1 9 (Application Patent Range, paragraph [0010] to [0013], Figure 1) Patent Document 2: JP-A-2000-122575 ([0013 [0016] Section 4, Patent Document 3: Japanese Patent Laid-Open No. Hei No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. — Document No. 143257 (Scope of Application for Patent Application, Fig. 3) Patent Document 5: JP-A-JP-A-95-00 (No. 〇1〇, Section 1) [Summary of the Invention] [Problems to be Solved by the Invention] The TFT photo sensor has the following characteristics, in which, when no light is encountered, a trace of leakage current flows in the gate off region. (No photocurrent), when it encounters light, it has a leakage current (leakage current) corresponding to the light intensity (brightness) of 200813577. In addition, since the TFT photosensor uses this leakage current to detect the brightness of the external light, the leakage current is extremely weak, and the output of the TFT photo sensor is susceptible to external noise. Therefore, if the photosensor is assembled on a substrate of a liquid crystal display panel, such as an active matrix substrate (also referred to as an "array substrate"), a peripheral driving circuit for driving the liquid crystal is disposed on the active matrix substrate. And external terminals, etc., high frequency signals and heat from these circuits affect the light sensor. In this regard, in the liquid crystal display device of Patent Document 3, the photo sensor is provided at a portion far from the peripheral circuit and the terminal portion that generates a high-frequency signal or generates heat, and is not affected by such noise. . However, in the photo sensor, at least a TFT photosensor is connected, and there are leads such as a power supply line and an output line, and the leads are surrounded around the display portion: therefore, among these leads, especially the output line are susceptible to The impact of external noise. Further, since parasitic capacitance is generated between the output line and the common electrode, the output line is affected by the counter electrode voltage (hereinafter referred to as "VCOM voltage") applied to the common electrode of the counter substrate. In addition, the photo sensor is also directly affected by the VCOM voltage. In addition, since such a photosensor is susceptible to external noise, there is known a sensor in which an electrostatic shielding film is provided on an active matrix substrate (see Patent Documents 4 and 5 above), but these photosensors A conductive film and an insulating film for electrostatic shielding are provided between the active matrix substrate and the gate wiring. When such a conductive film is provided, when the 200813577 optical sensor is formed on the active matrix substrate, it is required to be required for normal manufacturing. The addition of a special step in the step results in a complicated manufacturing process, and thus the overall cost becomes high. The present invention has been made to solve the problems of the prior art, and an object of the present invention is to provide a liquid crystal display device in which a photosensor is assembled in a manner that is not affected by external noise and peripheral circuits. On the LCD display panel. Further, another object of the present invention is to provide a liquid crystal display device in which a photo sensor and an output line drawn from the photo sensor are assembled in such a manner as not to be affected by external noise and peripheral circuits. Further, another object of the present invention is to provide a liquid crystal display device which can perform electrostatic shading of the photo sensor and the output line without increasing the manufacturing steps of the liquid crystal display panel. [Means for Solving the Problems] In order to achieve the above object, an invention of a liquid crystal display device of the present invention includes a liquid crystal display panel in which a liquid crystal layer is provided between an active matrix substrate and a counter substrate, and a photodetecting portion having a light sensor for detecting external light on the active matrix substrate; an output line for deriving an output signal from the light detecting portion; a power supply line for supplying a constant voltage; and an illumination mechanism for controlling according to an output of the light detecting portion The photo sensor is covered by a transparent electrode via a transparent insulating layer, and the transparent electrode is electrically connected to the power line. According to the invention, the photosensor of the photodetecting portion is covered by the transparent electrode, and the potential of the transparent electrode is stabilized by a constant voltage. Therefore, in 200813577, the transparent electrode acts as a static shield, making the photosensor less susceptible to external noise and peripheral circuits. This makes it possible to detect external light with high sensitivity and reduce malfunctions when controlling the illumination mechanism. Further, in the present invention, the photo sensor may employ a well-known sensor such as a TFT or a photodiode. Further, in the invention of the liquid crystal display device of the present invention, the photosensor is formed of a thin film transistor, and the transparent electrode covers a facing portion of the source and the drain of the thin film transistor as viewed in plan. According to the above invention, since the photo sensor adopts a TFT, the transparent electrode covers the opposite ends of the source and the drain of the TFT, so that it can be effectively affected by external noise and peripheral circuits. The TFTs belonging to the photo sensor are electrostatically shielded. Further, in the invention of the liquid crystal display device of the present invention, the source and the drain are arranged to be comb-toothed with each other, and are meshed with each other at a predetermined distance. According to the above invention, since the channel region ® of the photosensor serving as the TFT becomes large, light can be detected over a wide range, and the light detection sensitivity can be improved. Further, the invention of the liquid crystal display device of the invention is characterized in that the surface of the thin film transistor is covered with a planarizing film, the transparent electrode is formed on the surface of the planarizing film, and is provided through the planarizing film and the transparent insulating layer. The contact hole on the layer is electrically connected to the power line. According to the above invention, since the TFT, the transparent insulating film, the planarizing film, and the transparent electrode can be formed simultaneously with the active element mounted on the active matrix substrate and the pixel electrode of the display portion, etc., it is not necessary to form a special-10. - 200813577 Increase the manufacturing hours by using these structures. Further, in the invention of the liquid crystal display device of the present invention, at least an output line of the power source line and the output line is covered by the transparent electrode via the transparent insulating layer, and the transparent electrode is formed by the transparent layer. The contact hole on the insulating layer is electrically connected to the power line. According to the above invention, since at least the output lines of the power supply line and the output line connected to the photo sensor are covered by the transparent electrode to achieve electrostatic shielding, and the transparent electrode is formed by contact on the transparent insulating layer The hole is electrically connected to the power line, so that even if the VCOM voltage of the opposite substrate changes greatly, the VCOM voltage can be prevented from affecting the output line having a weak output signal. Further, the invention of the liquid crystal display device of the present invention is characterized in that two power supply lines are provided in parallel, and the output lines are provided on the two power supply lines. According to the above invention, the output lines are surrounded by two power supply lines and transparent electrodes. The electrostatic shielding is achieved, so the output line is less affected by external noise, especially from the horizontal direction of the substrate. In addition, when 'constructed according to this', since a capacitor is formed between the power supply line and the output line, it is possible to prevent a parasitic capacitance between the output line and the common electrode provided on the opposite substrate by the capacitor capacitance. The risk of being affected by the voltage applied to the common electrode by the output signal output from the output line is reduced. Further, in the invention of the liquid crystal display device of the present invention, the first transparent insulating layer, the output line, the second transparent insulating layer -11-200813577, and the transparent electrode are in this order from the power supply line. The power supply line, the output line, and the transparent electrode are stacked in a plan view when viewed in plan view, and the transparent electrode is connected to the power supply line via a contact hole formed in the first and second transparent insulating layers. According to the above invention, since the output line is sandwiched between the power supply line and the transparent electrode to achieve electrostatic shielding, the transparent electrode is electrically connected to the power supply line through the contact holes formed on the first and second transparent insulating layers. Therefore, even when the VCOM voltage of the counter substrate is largely changed by the transparent electrode, the influence of the VCOM voltage on the output line having a weak output signal can be prevented. In addition, there is little influence on external noise or the like that enters from the vertical direction of the substrate via the power supply line. Further, the invention of the liquid crystal display device of the present invention is characterized in that the width in the direction perpendicular to the longitudinal direction of the power supply line and the transparent electrode is made larger than the width of the output line in the citrus direction. According to the above invention, since the width of the power supply line and the transparent electrode is made larger than the width of the output line, the outer circumference of the output line is widely covered by the power supply line and the transparent electrode, so that the shielding effect can be more exhibited. Further, the invention of the liquid crystal display device of the present invention is characterized in that the power supply line and the gate electrode of the thin film transistor which is a switching element of the liquid crystal display panel formed on the active matrix substrate are formed of the same material, The output line is formed of the same material as the source and the drain of the thin film transistor as the switching element, and the transparent electrode and the pixel electrode of the liquid crystal display panel are formed of the same material. -12- 200813577 According to the above invention, the power supply line and the gate electrode and the output line of the thin film transistor used as the liquid element are formed of the same material as the image of the drain electrode and the transparent electrode and the liquid crystal display panel, so that it is not necessary to additionally These wirings and the like are formed, and these wirings and the like can be formed without increasing the liquid crystal. Further, in the liquid crystal display device of the present invention, the power supply line is laminated on the output line so as to sandwich the transparent insulating layer. According to the above invention, since the output line is shielded, even when the counter substrate is largely changed by the power supply line, the influence of the output line through which the VCOM electric signal flows can be prevented. Further, in the liquid crystal display device of the present invention, the width direction of the power supply line is perpendicular to the direction of the output line in the same direction. According to the above invention, due to the width of the wide line of the power supply line, the upper side of the output line is more shielded by the power supply line. Further, the output line of the liquid crystal display device of the present invention is formed with a source and a cathode of a thin film transistor formed as a switching element of the active matrix substrate, and the switching film of the power line and the crystal display panel of the liquid crystal display panel The source electrode of the transistor is characterized in that the manufacturing steps of the panel are prepared by preparing different materials respectively, and the VCOM voltage which is superposed on the upper surface and overlaps the power supply line and has static electricity has a weak output. The feature is that the width is greater than the degree that the system is wider than the output and is widely covered. Therefore, the liquid crystal display surface of the upper plate is made of the same material element electrode with the same material of -13-200813577. form. According to the above invention, the output line and the switch as the liquid crystal display panel. The source and the drain of the thin film transistor of the element, the power supply line and the pixel electrode are respectively formed of the same material, so that these wirings can be formed without separately preparing different materials, and the liquid crystal display can be omitted. In the case of the manufacturing steps of the panel, two wirings are formed. Further, the invention of the liquid crystal display device of the present invention is characterized in that the output line is formed of the same material as the gate electrode of the thin film transistor which is a switching element of the liquid crystal display panel formed on the active matrix substrate, The power supply line is formed of the same material as the source and the drain of the thin film transistor as the above-described switching element. According to the above invention, the output line and the gate of the thin film transistor as the switching element of the liquid crystal display panel, the power supply line, and the source and the drain of the above-mentioned thin film transistor are formed of the same material, respectively, so that it is not necessary In the case where different materials are prepared, these wirings are formed, and two wirings can be formed without increasing the manufacturing steps of the liquid crystal display panel. Further, the invention of the liquid crystal display device of the present invention is characterized by the above. The power supply line and the output line and the thin film transistor formed as a switching element of the liquid crystal display panel on the active matrix substrate can be simultaneously formed in the fabrication step. According to the above invention, since both the power supply line and the output line can be formed simultaneously with the formation of the active element mounted on the active matrix substrate and the pixel electrode of the display portion, it is not necessary to increase the manufacturing-14 in particular for forming these structures. 200813577 Working hours. Further, the invention of the liquid crystal display device of the invention is characterized in that the photosensor is formed of a thin film transistor and a capacitor. Further, in the invention of the liquid crystal display panel of the invention, the source of the thin film transistor is connected to one of the electrodes of the capacitor, and is connected to the output line, and the other electrode of the capacitor is connected to the power source. Wire connection. According to the above invention, since a capacitor is provided between the output line and the power supply line having a constant voltage, the sudden voltage change can be suppressed, so that even if the VCOM voltage of the opposite substrate is largely changed, it can be avoided. The effect on the signal of the output line. Further, in the invention of the liquid crystal display device of the present invention, a predetermined negative voltage is applied to a gate of the thin film transistor, and a source of the thin film transistor is connected to one of the capacitors, and a switching element is provided. The capacitor is connected to the reference voltage supply source to charge the capacitor by turning the switching element into an on state. According to the above invention, the circuit structure is formed such that a predetermined negative voltage is applied to the gate of the thin film transistor, and the source of the thin film transistor is connected to one of the capacitors while the reference voltage is applied to the reference voltage. The charging is performed, and thus the photodetecting circuit described in the fifteenth aspect of the patent application and the fifteenth aspect of the patent application can be constructed. [Embodiment] Hereinafter, a preferred embodiment for carrying out the invention will be described with reference to the accompanying drawings, -15-200813577, but the embodiment described below is a liquid crystal display device for illustrating only the technical concept of the present invention. The present invention is not intended to be limited to the embodiment, and the invention can be equally applied to various modifications without departing from the technical scope of the invention. (Embodiment 1) Fig. 1 is a schematic plan view showing a TFT substrate shown in a color filter substrate of a liquid crystal display panel according to Embodiment 1 of the present invention. As shown in FIG. 1, the liquid crystal display panel 1 includes a pair of active matrix substrates (hereinafter referred to as "TFT substrates") 2 and color filters having a rectangular transparent material disposed opposite to each other, such as a glass plate. The substrate CF and the TFT substrate 2 are formed by using a substrate having a larger size than the color filter substrate CF so as to form a predetermined space when facing the color filter substrate CF. The TFT substrate 2 and the color filter are formed thereon. A sealing material is attached to the outer periphery of the sheet substrate CF, and a liquid crystal and a spacer are sealed inside. Various wirings and the like are formed on the opposite surface sides of the TFT substrate 2 and the color filter substrate CF. Wherein, the color filter substrate CF is provided with a black matrix 'fitted in the pixel region of the TFT substrate 2, and arranged in a matrix; color filters such as red (R), green (G), and blue (B) ( The illustration is omitted, and is disposed in a region surrounded by the black matrix; and a common electrode ' is disposed to cover the electrode on the side of the TFT substrate 2 and to cover the color filter. Further, a backlight (not shown) is provided on the back surface of the TFT substrate 2, and is controlled by an output signal from the photodetecting portion ls. -16- 200813577 The TFT substrate 2 has opposite short sides 2a, 2b and long sides 2c, 2d, and the short side 2b side of one side constitutes a projecting portion S, on which the source driver and the gate are mounted The semiconductor wafer Dr for the driver is provided on the other side of the short side 2a, and the photodetecting portion LS is provided. The TFT substrate 2 has a plurality of gate lines GWi to GWn (n = 2, 3, 4, which are arranged at a predetermined pitch in the column direction (lateral direction) of Fig. 1 on the surface thereof, that is, the surface in contact with the liquid crystal. ...); insulated from these gate lines GW!~GWn φ, a plurality of source lines SW i to SW m (m = 2, 3, 4, ...) in the column direction (longitudinal direction): these sources The lines SW! to SWm and the gate lines GW] to GWn are arranged in a matrix, and are formed in each region surrounded by the gate lines GW1 to GWn and the source lines SWi to SWm that intersect each other by the gate line GWi. A switching element (not shown) that is turned on by the scanning signal of GWn and an image electrode that supplies an image signal from the source SWi to SWm by the switching element. Each of the regions ® surrounded by the gate lines GWi to GWn and the source lines SW! to SWm constitutes a so-called pixel, and the region in which these pixels are formed constitutes the display region DA, that is, the image display portion. The switching element is used, for example, a thin film transistor (TFT). Each of the gate lines GWi to GWn and the source lines SW! to SWm extend outside the display area DA, surround the outer peripheral area outside the display area DA, and are connected to the source driver and the gate driver semiconductor wafer Dr. Further, the TFT substrate 2 is provided with the photodetecting portion LS on one side of the short side 2a, and the extension wirings L? and L derived from the photodetecting portion LS are provided on the long side 2d side, and the extension wirings L, L and Connect the terminals I and T2 of the external control circuit. -17- 200813577 Further, a region where the light detecting portion LS and the extension wirings L and L are formed, that is, a region indicated by a hatched line in Fig. 1 is a shielding structure. This masking structure will be described later. Next, the light detecting portion LS and the extension wirings L, L will be described with reference to Figs. 1 to 4 . The structure is described. 2A is an equivalent circuit diagram of the photodetecting portion, FIG. 2B is a waveform diagram for explaining a relationship between a VCOM voltage applied to the common electrode and the sensor output, and FIG. 3 is a cross-sectional view of the photodetecting portion. Fig. 4 is a cross-sectional view taken along line IV-IV of Fig. 1. As shown in FIG. 2A, the photodetecting portion LS has a circuit configuration in which a capacitor C, a source 31 and a capacitor C are connected in parallel between the drain and the source St of the TFT photosensor. One terminal is connected to the reference voltage source Vs via the switching element SW, and the other terminal of the drain EK and the capacitor C is connected to the reference voltage source Vref. This reference voltage source Vref is a constant DC voltage source. Further, on the gate Ge, a gate-off voltage is applied, for example, a 10V. The output of this photodetecting portion LS is derived from the source St which is one terminal of the capacitor C. This photodetecting portion LS is formed on the TFT substrate 2. That is, as shown in Fig. 3, 'on the TFT substrate 2, the gate Ge of the TFT photosensor and one terminal Ci of the capacitor C are formed, and the tantalum nitride is laminated so as to cover the surfaces thereof. A gate insulating film 3 formed of ruthenium oxide or the like. Above the gate Gt of the TFT photosensor, a semiconductor layer 4 formed of amorphous barium, polysilicon or the like is formed by the gate insulating film 3, and further, on the gate insulating film 3, a semiconductor is used. The layer 4 is electrically connected to form a source St and a drain De of a TFT photosensor of -18-200813577 formed of a metal such as aluminum or molybdenum. Among them, the source Si of the TFT photosensor is elongated to form the other terminal C2 of the capacitor C. Further, a protective insulating film 5 made of, for example, an inorganic insulating material is laminated in a manner of covering the surface of the TFT photosensor and the capacitor C, and a conductive film (ITO) formed of a transparent material is formed thereon. 6. This conductive film 6 is a device in which a pixel electrode for driving a liquid crystal is extended. This TFT photosensor is formed simultaneously with the TFT which is a switching element in the manufacturing process of the liquid crystal display panel. Therefore, it is not necessary to increase the manufacturing man-hour for setting the photodetecting portion LS. In addition, a plurality of TFT photosensors may be used instead of one, so that the side corresponding to the short side 2a is arranged in a row. A plurality of TFT photosensors are disposed in a row on the short side, so that even if the user accidentally blocks a part of the TFT photosensor with a finger or the like, since all TFT photosensors are blocked at the same time There are fewer, so the detection of light can be performed by an unobstructed TFT light sensor. The photodetecting portion LS is formed on the outer peripheral edge of the display region DA, that is, at a portion that is provided inside the sealing material application region and that is in contact with the liquid crystal layer. Alternatively, it may be formed on the outer side of the sealing region. From the light detecting portion LS, a power supply line L connected to the drain D1 and an output line L connected to the source Se are drawn. . Further, the extension line connected to the gate G1 is also taken out from the light detecting portion LS, although this is omitted in the drawings. Lead the wiring L, L. In the middle, the power supply line L is divided into two at a position indicated by the symbol 11 near the corner portion surrounded by the short side 2a and the long side 2d, and the power supply lines L1, L2 of the branch are on the long side. On the 2d side, cross the output -19-200813577 line L〇 and route along the output line L〇. That is, as shown in Fig. 1, the two power supply lines Li and L2 of the branch are provided on the output line B by using the space on the long side 2d side. Both sides and after being surrounded by the projection S, are joined to the terminal Ti by being bonded to the position indicated by the symbol t2. In addition, the symbols tl, t2 represent branch connection points. The cross-sectional structure of the branched power supply lines L!, L2 and the output line L, as shown in FIG. 4, is a structure in which an output line L is provided on the gate insulating film 3 provided on the TFT substrate 2. The center line is provided with power supply lines L!, L2 branched at a predetermined interval on both sides, and the two power supply lines b, L2 are covered by the protective insulating film 5, and a conductive film (ITO) formed of a transparent material is formed thereon. 6. Further, a contact hole is formed at an arbitrary portion of the protective insulating film 5, and each of the power supply lines L!, L2 and the conductive film 6 is electrically connected by the contact hole. Further, the conductive film 6 is connected to the reference voltage source Vref. Thus, the output line L. The periphery is covered by respective power supply lines b, L2 and a conductive film 6, which are connected to a reference voltage source Vref, thereby being opposed to the output line L. Cover the static electricity so that it is not affected by external noise. Further, a part of the capacitor capacity of the capacitor C shown in Fig. 2 is formed between the output line L〇 and each of the power supply lines L, L! and L2, and the output line L is formed. Since the power supply lines L and Lr L2 are disposed along the long side 2d of the TFT substrate 2, the capacitance thereof is large. In addition, the power lines L, L1, L 2 and the output line L. In the manufacturing process of the liquid crystal display panel 1, similarly to the source Su and the drain D1 of the TFT photosensor, the source lines SWi to SWm of the TFT as the switching element are formed of the same material. Therefore, since these lead wires L, Ld to L2 can be formed at the same time as the source line SW/~SWm forming steps of the TFT as the switching element, -20-200813577 can be used without increasing the number of steps. , formed simply. Further, although the power supply line L is shown as an example of branching into two, the following configuration may be employed in which two power supply lines L L2 are previously made parallel to the output line L. Further, by providing the contact holes provided in the protective insulating film 5, the two power supply lines Li, L2 are electrically connected to the conductive film 6, respectively. Next, the operation of the light detecting portion Ls will be described with reference to Fig. 2 . First, a certain current voltage (for example, 0V) is applied to the drain DL· from the reference voltage source Vref, and a certain negative voltage (for example, a 10V) is applied to the gate G1 of the TFT photosensor to make the switch. The component SW is applied with a constant reference voltage Vs (for example, + 2 V) on the capacitor C for a predetermined period of time (for example, referring to (2) of FIG. 2B), and the capacitor C performs the reference voltage Vs and the reference from the reference. Charging of the voltage difference Va of the current voltage of the voltage source Vref. At this time, a VC0M voltage formed by a rectangular wave having a regular amplitude as shown in (1) of Fig. 2B is applied to the common electrode of the color filter substrate. In this state, if the external light is irradiated onto the TFT photosensor, the current is leaked in the TFT photosensor, and a part of the charging voltage of the capacitor C is discharged, and the discharge amount increases with time for the surrounding brightness. Therefore, the charging voltage of the capacitor C deducting the electric discharge, that is, the output voltage Vs' is reduced as shown in FIG. 2B (in addition, in FIG. 2, simply indicated by a straight line). In addition, the output voltage Vs' is read by an output reading unit not shown to perform backlight control. According to the first embodiment, power is directly disposed on both sides of the output line L〇. According to the regulation, the direct CF constant light flow should be pressed 3) the electrogram line-21-200813577, L2, and the output line L〇 and the respective power supply lines L!, L2 are covered with the conductive film 6 by the protective insulating film 5, Since any one of the power lines L, Li, and L2 is electrically connected to the conductive film 6, the conductive film 6 is connected to the reference voltage source Vref, so that the output line La can be electrostatically shielded, and the influence of external noise can be suppressed. . Further, by making the capacitance formed between the respective power supply lines and the output line and the reference voltage source Vref a constant DC voltage, a stable output voltage Vs' which is as free from the influence of the VC0M voltage can be obtained. Further, when the reference voltage source Vref is replaced by a VCOM voltage formed by a rectangular wave and a constant DC voltage is substituted, the output voltage is lowered in synchronization with the VCOM voltage as shown in (4) of FIG. 2B, and lacks stability. It is difficult to read the reading unit. In addition, when a configuration in which the periphery of the output line L〇 is not shielded in a state where the reference voltage source Vref is a constant DC voltage is generated, the output voltage is generated because a parasitic capacitance is generated between the output line L〇 and the common electrode. Under the influence of the VCOM voltage, as shown in (5) of the 2nd (B) diagram, it becomes unstable. Fig. 5 is a view showing a modification of the photosensor constituting the detecting unit LS. Fig. 5A is a schematic plan view of the photosensor on the TFT substrate as seen from the sensor window of the CF substrate, and Fig. 5B is taken along the 5th. Figure VB — A cross-sectional view of the VB line. The TFT photosensor of the photodetecting portion LS is as shown in FIG. 5B. First, the gate G1 of the TFT photosensor is formed on the TFT substrate 2. The gate G1 is covered by the gate insulating film 3 to cover The semiconductor layer 4 is formed directly above the gate insulating film 3-22-200813577 of this gate. Further, a drain and a source core which are in contact with the semiconductor layer 4 are provided on the gate insulating film 3. As shown in FIG. 5A, the drain electrode h and the source electrode S have a comb-shaped electrode sheet having a predetermined gap, and one of the comb-shaped electrode sheets enters between the other comb-shaped electrode sheets. The method is formed on the gate insulating film 3. As a result, the electrode sheets of the source core and the electrode sheets of the drain are alternately disposed. Thus, by alternately arranging the electrode sheets, the channels formed by the respective source Φ L and the drain 1 can be enlarged, and external light detection can be performed over a wide range. The semiconductor layer 4, the source electrode Se, and the drain electrode Di are disposed inside the gate G1 as viewed in plan. By thus providing the semiconductor layer 4, the source S1, and the drain D1 on the inner side of the gate G1, the light from the backlight of the TFT substrate 2 is blocked by the gate G1 without being irradiated onto the semiconductor layer 4. In addition, the gate CK is formed larger than the sensor window provided on the CF substrate. Further, the drain Di, the source S1, the semiconductor layer 4, and the periphery of these electrodes are covered by the protective insulating film 5, and the planarizing film 7 is formed on the protective insulating film 5. Further, the surface of the planarizing film 7 is covered by the conductive film 6. Further, a contact hole is formed on the protective insulating film 5 and the planarizing film 7, and the drain electrode De and the conductive film 6 are electrically connected by the contact hole. Therefore, the conductive film 6 is connected to the reference voltage source Vref. According to this configuration, the protective film 5 and the planarizing film 7 are interposed therebetween so as to cover the TFT photosensor and the output line L〇 formed on the TFT substrate 2, thereby forming the conductive film 6. The conductive film 6 is electrically connected to the drain electrode De by the contact hole ,, and the conductive film 6 is connected to the reference source -23-200813577 voltage source Vref. Therefore, 'the VCOM voltage applied to the common electrode of the CF substrate and the conductive film 6' connected to the power supply lines L, L!, L2 are interposed between the source S1 and the output line L', so that the VCOM voltage pair can be prevented. The output signal of the TFT photo sensor has an effect. Embodiment 2 FIG. 6 is a plan view schematically showing a TFT substrate of a color filter and a light-film substrate of a liquid crystal display panel according to Embodiment 2 of the present invention, and FIG. 7 is a line along the line VII-VII of FIG. Cutaway view. This liquid crystal display panel 1A has the same structure as the liquid crystal display panel 1 of the first embodiment except for the aspects of the power supply line and the output line laminated wiring. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals and the description thereof will not be repeated, and only the different structures will be described. In the liquid crystal display panel 1A, the power supply line L and the output line L from the photodetecting portion LS are laminated such that the gate insulating film 3 is interposed therebetween. That is, as shown in FIG. 7, on the TFT substrate 2, a power supply line L is provided in the same step as the gate line Gi, and the power supply line L is covered by the gate line 3 in accordance with the gate insulating film 3 In a manner overlapping with the power source line L, in the same step as the source St and the drain electrode De, the output line L is laminated, covered by the protective insulating film 5, and covered with transparency. A conductive film (ITO) 6 formed of a material. Further, a contact hole (not shown) is provided on a part of the gate insulating film 3, and therefore, the power source line L is connected to the drain Di. Further, a contact hole (not shown) is formed in any portion of each of the insulating films 5, 3, and the power supply line -24 - 200813577 L and the conductive film 6 are electrically connected by the contact hole. Further, the conductive film 6 is connected to the reference voltage source v r e f by this connection. Output line L. The same material as the source Si is formed integrally in the same manufacturing step. Further, the power supply line L and the gate polarization are formed of the same material in the same manufacturing step. Therefore, the respective leads can be formed simply. According to this configuration, the gate insulating film 3 is interposed between the output line L〇 and the power supply line 1 is provided, and the protective insulating film 5 is interposed therebetween so that the conductive film 6 is placed. Therefore, the line L is output. It is surrounded by the conductive film 6 and the power source line L to achieve electrostatic shielding. According to this configuration, in particular, noise from directly under the TFT substrate 2 can be shielded. Although the leads L, L are shown in Fig. 7. The middle makes the output line L. The width of the power line L is substantially the same, but the width of the power line L is larger than the output line L. The width is preferred. Further, Fig. 8 is a view showing a modified example of the lead of the liquid crystal display panel shown in Fig. 6, and Fig. 8A is a schematic enlarged plan view showing the wiring and the lead of the long side (2d) portion of Fig. 6, and Fig. 8B is a Section 8A - Figure VIIIB - Sectional view of line VIIIB. When the power line L and the output line L are compared with the present modified example. When the width in the direction perpendicular to the longitudinal direction is ..."::, W2 is made larger than Wi. Further, the output line L is covered by the conductive film 6 having a width W3 wider than the width w2 of the power supply line L. The upper and lower sides of the output line L are covered by the insulating films 3 and 5, and contact holes are formed in the insulating films 3 and 5, and the conductive film 6 and the power source line L are electrically connected by the contact holes. By this connection, the conductive film 6 is connected to the reference voltage source Vref. With this configuration, since the outer circumference of the output -25-200813577 line L is covered almost by the wide-width conductive film 6 and the power supply line L, Embodiment 3 FIG. 9 is a perspective view of a liquid crystal display panel according to Embodiment 3 of the present invention, which is viewed from a color filter substrate stacked on a TFT substrate, and shows a wiring of the lower TFT substrate. A schematic plan view, a first plan view is a cross-sectional view taken along the line X-X in Fig. 9. This liquid crystal display panel 1 B is compared with the liquid crystal display panel 1 of the first embodiment except for the power supply line and the output line laminated wiring. In addition to the aspect, there is a liquid crystal display of the first embodiment The structure of the first embodiment is the same as that of the first embodiment, and the same reference numerals will be given to the same components as those in the first embodiment, and the description will be omitted only for the different structures. The liquid crystal display panel 1 B has the following structure, that is, from the light detecting portion. The output line L of the LS is formed on the gate insulating film 3, and is covered by the protective insulating film 5, and a conductive film (ITO) 6 made of a transparent material connected to the drain Di is formed on the protective insulating film 5. That is, the conductive film (ITO) 6 serves as the power source line L, and is connected to the external circuit via the terminal 1. Thus, the upper side of the output line L〇 is covered by the conductive film (ITO) 6 constituting the power source line L, whereby The output line L is electrostatically shielded, so that the noise directly from the TFT substrate 2 can be shielded. This output line. L. The source L is formed integrally with the same material in the same manufacturing step, and the conductive film 6 as the power source line L is formed simultaneously with the pixel electrode for liquid crystal driving, and one end portion thereof is connected to the drain electrode De. Therefore, each of the leads L and L〇 can be formed simply. Embodiment 4 -26- 200813577 FIG. 11 is a perspective view showing a liquid crystal display panel according to Embodiment 4 of the present invention from a color filter substrate stacked on a TFT substrate, and showing a wiring or the like of the lower TFT substrate. In the top view, Fig. 12 is a cross-sectional view taken along line XII - XII of Fig. 11. The liquid crystal display panel 1 C and the liquid crystal display panel 1 of the first embodiment have the same configuration as the liquid crystal display panel of the first embodiment except for the aspects of the power supply line and the output line laminated wiring. Therefore, the same components as those of the first embodiment are denoted by the same reference numerals, and the repeated description will be omitted, and only the different structures will be described. In this liquid crystal display panel 1 C, as shown in Figs. 1 and 12, the line L is output. The TFT substrate 2 is formed by the gate insulating film 3, and the gate insulating film 3 is extended from the drain Dt of the photodetecting portion LS and has a width larger than the output line L. The power line L is used to cover the output line L. The way to form. Further, this power source line L is covered by the protective insulating film 5. Further, the output line Ld is connected to the source L by a contact hole (not shown) provided on the gate insulating film 3. ® Thus, the output line L〇 is overlaid by the power line L, and the output line L is made. Achieve static electricity shielding. Therefore, in particular, noise from directly above the TFT substrate can be shielded. This output line L. The same material as the gate G1 is integrally formed in the same manufacturing step, and one end thereof is connected to the source Se by a contact hole provided on the gate insulating film 3. Further, the power source line L and the source and the drain D1 are integrally formed in the same manufacturing step with the same material, and the drain D1 is extended and formed. Further, in the fourth embodiment, the surface -27-200813577 of the photodetecting portion LS is preferably covered with a conductive film (ITO) 6, and it is preferable to provide the conductive film (?0) 6 by The contact hole (not shown) such as the insulating film 5 is protected and connected to the power source line L. The present invention has been described above in detail by the above embodiments, but the present invention is not limited thereto, and those having ordinary knowledge in the art to which the present invention pertains can be made without departing from the spirit and scope of the invention. Make corrections or changes. For example, the photo sensor may not be a thin film transistor, but other photosensors such as a photodiode may be used. In addition, the operation circuit of the TFT photosensor is not limited to the form of FIG. 2A. For example, a circuit may be formed in which the source Si is connected to the reference voltage source Vref, and the drain D1 and the reference voltage source are connected. The Vs connection charges the photocurrent output from the TFT photosensor into the capacitor C. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing a TFT substrate shown in a perspective view of a color filter substrate of a liquid crystal display panel according to a first embodiment of the present invention. ^ Fig. 2A is an equivalent circuit diagram of the photodetecting section, and Fig. 2B is a waveform diagram illustrating the relationship between the VC0M voltage applied to the common electrode and the sensor output. Fig. 3 is a cross-sectional view of the photodetecting portion. Fig. 4 is a cross-sectional view taken along line IV-IV of Fig. 1. Fig. 5 is a view showing a modification of the photosensor constituting the photodetection LS, and Fig. 5A is a perspective view of the photosensor on the TFT substrate as seen from the sensor window of the CF substrate, and Fig. 5B is a plan view of Fig. 5B. A section along the line -28-200813577 VB — VB ' in Figure 5A. Fig. 6 is a schematic plan view showing a TFT substrate shown by looking at a liquid crystal display color filter substrate according to a second embodiment of the present invention. Fig. 7 is a cross-sectional view taken along line VII-VII of Fig. 6 and Fig. 8 is a view showing a modification of the lead wire, and Fig. 8A is a plan view showing the wiring and the lead wire of the long side 2b portion of Fig. 6 for the A cross-sectional view of line VIIIB-VIIIB in Figure 8A. Fig. 9 is a schematic plan view showing a liquid crystal display panel of the third embodiment of the present invention, showing a wiring or the like below. Fig. 10 is a cross-sectional view taken along line X-X in Fig. 9. Fig. 11 is a schematic plan view showing a color filter stacked on a TFT substrate, a liquid crystal display panel according to a fourth embodiment of the present invention, and a wiring of the lower panel as seen. Fig. 12 is a cross-sectional view taken along the line XII - XII in Fig. 11 [Explanation of main component symbols] Color mode representation of the panel Fig. 8B Substrate perspective TFT base diagram of the substrate and substrate substrate. 1 , 1A to 1C LCD panel 2 Active matrix (TFT) substrate S Extension 3 Gate insulation film 5 Protective insulation film 6 Conductive film LS Light detection unit -29- 200813577 L〇 Output line L, L1, L 2 Power supply Line H Contact hole Vref Reference voltage source Va Voltage difference Vs Reference voltage Vs, Output voltage 30-