JP2009145716A - Liquid crystal display and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display, equipped with an optical sensor improved in responsiveness by eliminating the detection delay of environmental light. <P>SOLUTION: The liquid crystal display 1 includes a liquid crystal display panel; a photodetecting part, having TFT optical sensors LS<SB>1</SB>, LS<SB>2</SB>formed of TFTs built in the substrate of the liquid crystal display panel that detects external light; an illuminating means for illuminating the liquid crystal display panel; a detection circuit connected to the photodetecting part; and a control means for controlling the brightness of the illuminating means, based on the output of the detection circuit. Distribution wirings L<SB>1</SB>-L<SB>3</SB>connected to gate electrodes G<SB>L1</SB>-G<SB>L6</SB>, source electrodes S<SB>L1</SB>-S<SB>L6</SB>and drain electrodes D<SB>L1</SB>-D<SB>L6</SB>of the TFT optical sensors are arranged in parallel, and the outer edge parts of the gate electrodes G<SB>L1</SB>-G<SB>L6</SB>are covered with the distribution wirings L<SB>1</SB>-L<SB>3</SB>via insulating members, in plan view, so as not to produce clearances between the gate electrodes G<SB>L1</SB>-G<SB>L6</SB>and the distribution wirings L<SB>1</SB>-L<SB>3</SB>. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

The present invention relates to a liquid crystal display device and an electronic apparatus including the display device. More specifically, the present invention relates to a liquid crystal display device in which an optical sensor is incorporated in a liquid crystal display panel, ambient light is detected by the optical sensor, and an illuminating means is controlled, and an electronic apparatus including the display device.

A mobile device such as a cellular phone includes a display device that displays characters or images, and a transmissive or transflective liquid crystal display panel is used as the display device. These mobile devices are used in a variety of environments, from sunlight to dimly lit rooms,
An optical sensor is incorporated in a liquid crystal display panel, and ambient light is detected by this optical sensor to control illumination means such as a backlight (for example, see Patent Document 1 below).

10 shows an optical sensor disclosed in Patent Document 1 below, and FIG. 10A is a plan view of the optical sensor.
10B is a cross-sectional view taken along line XB-XB in FIG. 10A.
As shown in FIG. 10, an optical sensor 100 disclosed in the following Patent Document 1 includes a thin film transistor (hereinafter referred to as a TFT (Thin Film Transistor)) and is incorporated in a liquid crystal display panel (not shown). The optical sensor 100 includes a first substrate 101 and a second substrate 109 disposed to face the first substrate 101. In the first substrate 101, a gate electrode 105 is provided on a first base substrate 102, and the gate electrode 105 is covered with a gate insulating layer 103. On the gate insulating layer 103, source and drain electrodes 107 and 108 and a semiconductor layer 106 formed between these electrodes are provided. The semiconductor layer 106 is an active layer 1.
06a and the resistance contact layer 106b. The semiconductor layer 106 is located between the source and drain electrodes 107 and 108, a part of the resistive contact layer 106b is removed, and the active layer 106a is exposed at the removed portion to form a channel portion CH.

The second substrate 109 has a second base substrate 110, and a light shielding layer 111 is formed on the second base substrate 110. In the light shielding layer 111, a photosensor window 112 is formed at a location corresponding to the channel portion CH. The first and second substrates 101 and 109 are bonded to face each other, and a photosensor is formed on a part of the bonded substrates.

In the detection of ambient light using the optical sensor 100, when ambient light is incident on the channel portion CH, the resistance of the channel portion CH changes in accordance with the energy of external light, and the amount of current flowing through the channel portion CH. Changes. The amount of ambient light is detected based on the amount of change. This detection output is input to a control device (not shown), and the illuminance of the backlight or the like is controlled.
Japanese Patent Laying-Open No. 2006-171669 (paragraphs [0021] to [0027], FIGS. 1 and 2)

In the optical sensor disclosed in Patent Document 1, the gate metal constituting the gate electrode 105 is formed larger than the light receiving part on the first base substrate 102, and the light from the backlight enters the sensor and malfunctions. It has a structure that never happens. However, in this structure, the area of the gate metal formed on the first base substrate 102 becomes large. Therefore,
The capacitance formed between the gate metal and the electrode facing through the insulating member, that is, between the gate and the source and between the gate and the drain is increased. When this capacity increases, the time constant of the output wiring derived from the optical sensor increases, and it takes a long time to detect the ambient light until it is output. May occur.

11A is a characteristic diagram showing an example of a voltage-current curve of the TFT photosensor, FIG. 11B is an equivalent circuit diagram of the TFT photosensor, and FIG. 11C is a voltage across the capacitor in the equivalent circuit shown in FIG. 11B when the brightness is different. -It is a characteristic view which shows a time curve.

The operation principle of the TFT photosensor and the above problems will be described. The TFT photosensor LS is shown in FIG.
As shown in the figure, when the light receiving part is shielded from light, a very small dark current flows in the gate-off region, but when the light hits the light receiving part, the leakage current increases according to the intensity of the light. have. Therefore, as shown in FIG. 11B, by applying a constant reverse bias voltage as a gate-off region to the gate electrode _{G L} of the TFT of the light receiving portion (e.g. -10 V), between the drain electrode _{D L} and the source electrode _{S L} The capacitor C is connected in parallel, and the drain electrode _DL and one end of the capacitor C are connected to the ground potential. In this state, when the switch element S1 is turned on and a constant reference voltage Vs (for example, + 2V) is applied to the capacitor C, and then the switch element S1 is turned off, the voltage at both ends of the capacitor C becomes bright around the TFT photosensor LS. In response to FIG.
It decreases with time as shown in 1C.

Therefore, in this TFT photosensor LS, the time from when the switch element S1 is turned off until the predetermined voltage V ₀ is reached is inversely proportional to the intensity of the ambient light, and the predetermined time t _{0 is} predetermined.
The voltage across the capacitor C later is in inverse proportion to the intensity of ambient light. Therefore, if the time from when these switch elements S1 are turned off until the predetermined voltage V ₀ is reached, or the voltage of the capacitor C after the predetermined time t ₀ is measured, the intensity of the ambient light can be increased. Can be sought. However, this time t ₀ may be affected by the capacitance between the gate and the source and between the gate and the drain. That is, when the area of the gate metal is large, that is, between the gate and the source and between the gate and the drain, as in the photosensor of the above-mentioned Patent Document 1.
_SG and _CDG are formed, and their capacitance increases. As these capacities increase,
There is a possibility that the time constant of the output wiring derived from the optical sensor becomes large, and the above responsiveness problem becomes apparent.

The present invention has been made to solve the potential problems of the prior art, and an object of the present invention is to provide a liquid crystal display device equipped with an optical sensor that eliminates the detection delay of ambient light and improves responsiveness, and this An object of the present invention is to provide an electric device including a liquid crystal display device.

In addition to the above object, another object of the present invention is to provide a liquid crystal display device equipped with an optical sensor in which malfunction is prevented by light from an illuminating means, and an electrical apparatus including the liquid crystal display device.

Still another object of the present invention is to provide a frame area with a small area for forming various wirings connected to the optical sensor even in a liquid crystal display device equipped with a plurality of optical sensors in addition to the above-described object. An object of the present invention is to provide a liquid crystal display device in which an increase in the size of the liquid crystal display device is suppressed and an electric apparatus including the liquid crystal display device.

In order to achieve the above object, a liquid crystal display device of the present invention is incorporated in a liquid crystal display panel in which a liquid crystal layer is interposed between a pair of first and second substrates, and the liquid crystal display panel substrate. A light detection unit having a TFT photosensor composed of a thin film transistor (hereinafter referred to as TFT) that detects external light, an illumination means for illuminating the liquid crystal display panel, a detection circuit connected to the light detection unit, In a liquid crystal display device comprising: control means for controlling the brightness of the illumination means based on the output of the detection circuit;
The gate electrode of the TFT photosensor and the source wiring and drain wiring derived from the source electrode and drain electrode are arranged in parallel, and no gap is generated between the gate electrode and the source wiring and drain wiring. As described above, the outer edge of the gate electrode is covered with the source wiring and the drain wiring through the insulating member in plan view.

According to the above-described liquid crystal display device, for example, by setting the area of the gate electrode to a size that covers only the outer edge portion in plan view by the source wiring and the drain wiring, The capacity formed between them can be reduced. In addition, the area where the gate electrode and source / drain wiring overlap is reduced, the area of the source / drain wiring where it does not overlap with the gate electrode is increased, the electrical resistance is reduced, and the response of the photosensor is improved. The As a result, the time constant of the output wiring derived from the optical sensor does not increase, and the detection time from the detection of the ambient light to the output becomes faster and the responsiveness is improved. Further, since no gap is formed between the gate electrode and the source and drain wirings, light leakage can be suppressed. Note that it is preferable that the overlapping width of the gate electrode, the source wiring, and the drain wiring is smaller because a capacitance formed between them is smaller. In addition, the width can be adjusted as appropriate as long as there is no light leakage.

In the above invention, it is preferable that a hole or a notch having a predetermined size is formed at a portion covered with the source wiring and the drain wiring through the insulating member in a plan view of the gate electrode.

According to the preferable aspect, the TFT photosensor that constitutes the photodetecting portion has a hole or a predetermined size at a location where the gate electrode, the source wiring, and the drain wiring of the TFT that constitutes the photosensor overlap via the insulating member. Notches are formed, and these holes or notches are covered with source wirings and drain wirings via insulating members. Accordingly, an area where the gate electrode overlaps with the source wiring and the drain wiring can be reduced, and a capacitance formed between the gate electrode, the source wiring, and the drain wiring is reduced. Further, since the hole and the notch provided in the gate electrode are covered with the source wiring and the drain wiring, the light from the illuminating means does not enter the light receiving portion and cause a malfunction.

In the above invention, the photodetection unit includes a plurality of the TFT photosensors, and the plurality of TFT photosensors are divided into first and second TFT photosensors that detect light of different systems, and Of the source wiring or drain wiring of the first TFT photosensor and the second TFT photosensor, it is preferable that the wirings not connected to the detection circuit are formed by a single wiring.

According to the preferred aspect, the above-described effects can be achieved, and in the light detection unit that detects light of a plurality of systems, wiring that is not connected to the detection circuits of the first and second TFT photosensors having different systems, Since it is formed by a single routed wiring, there is no need to route a separate routed wiring for each system as in the prior art when detecting multiple systems of light. Therefore,
It is possible to reduce the number of routing wires wired to the light detection unit, and it is possible to reduce the space for providing the routing wires. In addition, the liquid crystal display panel can be narrowed, and a liquid crystal display device suitable for a small electronic device can be provided.

In the above invention, the plurality of photosensors of the first and second TFT photosensors are preferably such that the first TFT photosensor and the second TFT photosensor are arranged adjacent to each other in parallel.

According to the preferable aspect, since the first and second TFT photosensors are disposed adjacent to each other, the difference in sensitivity between the two becomes small, and light detection can be performed in almost the same environment. Also,
Since the first and second TFT photosensors are formed adjacent to each other, it is possible to form the TFTs having the same characteristics.

In the above invention, it is preferable that the plurality of photosensors of the first and second TFT photosensors are alternately arranged in the same row with the first TFT photosensor and the second TFT photosensor.

According to the preferable aspect, the plurality of photosensors constituting the first TFT photosensor and the second TF
Since the plurality of photosensors constituting the T photosensor are arranged in a row and alternately, the first and second
TFT photosensors can be arranged in a wide range, and even if ambient light is partially blocked by an obstacle, it is difficult to be erroneously recognized. In addition, since the photosensors can be arranged in a row, the length corresponding to the width direction of the frame region of the photodetecting portion can be shortened, so the width of the side where the first and second TFT photosensors of the liquid crystal display panel are formed is also reduced. The liquid crystal display device can be further reduced in size.

In the above invention, it is preferable that at least one of the first and second TFT photosensors is covered with a light shielding layer or a color filter layer of a predetermined color.

According to the preferable aspect, for example, if the second TFT photosensor is covered with the light shielding layer, the second T
Since the output of the FT optical sensor can be used as a dark reference voltage, more accurate control is possible. For example, if the first TFT photosensor is covered with a color filter layer of a specific color, for example, a color filter layer having a spectral sensitivity characteristic close to the user's visibility, more user-friendly control can be realized. .

In the above invention, the TFT photosensor is preferably formed simultaneously with the TFT formed as a switching element in the manufacturing process of the liquid crystal display panel.

According to the above preferred embodiment, it is not necessary to increase the number of manufacturing steps separately for forming the optical sensor, so that it can be manufactured inexpensively and easily.

  An electronic apparatus according to the present invention includes the above-described liquid crystal display device.

According to the above-described electronic device invention, since the liquid crystal display device capable of reducing the frame area is provided, it is possible to provide an electronic device particularly suitable for a small portable terminal.

Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a transflective liquid crystal display device in order to embody the technical idea of the liquid crystal display device of the present invention and an electronic apparatus including the liquid crystal display device. Is not intended to be specified as a transflective liquid crystal display device, and is equally applicable to other embodiments included in the claims, for example, a transmissive or reflective liquid crystal display device. To get. In addition, in Examples 1 and 2 below, an example in which the first and second TFT photosensors that detect two systems of light are used as the light detection unit will be described, but the present invention is limited to this. For example, it is obvious that the present invention can be similarly applied to a light detection unit that detects only one system of light.

FIG. 1 is a plan view schematically showing an AR substrate as seen through a color filter substrate of a transflective liquid crystal display device according to Embodiment 1 of the present invention. FIG. 2 shows one pixel of the AR substrate of FIG.
2A is a plan view, and FIG. 2B is a cross-sectional view taken along the line IIB-IIB in FIG. 2A. FIG. 3 shows the light detection unit of FIG. 1, FIG. 3A is an enlarged plan view of the detection unit, and FIG. 3B is an equivalent circuit diagram of the light detection unit. 4 is a cross-sectional view taken along the line IVA-IVA of FIG.
Is a cross-sectional view taken along the line IVB-IVB, FIG. 4C is a cross-sectional view taken along the line IVC-IVC, and FIG. 4D is a cross-sectional view taken along the line IVD-IVD. FIG. 5 shows a modification of the light detection unit of FIG. 1, FIG. 5A is an enlarged plan view of the light detection unit, and FIG. 5B is a cross-sectional view taken along the line VB-VB of FIG. FIG. 6 is a plan view schematically showing an AR substrate as seen through a color filter substrate of a transflective liquid crystal display device according to Embodiment 2 of the present invention.
7 shows the photodetection unit of FIG. 6, FIG. 7A is an enlarged plan view of the photodetection unit, and FIG.
It is sectional drawing of a IB-VIIB line. 8 shows a modification of the light detection unit in FIG. 7, FIG. 8A is an enlarged plan view of the detection unit, and FIG. 8B is a sectional view taken along line VIIIB-VIIIB in FIG. 8A. FIG. 9A is a diagram showing a personal computer equipped with a liquid crystal display device, and FIG. 9B is a diagram showing a mobile phone equipped with a liquid crystal display device.

With reference to FIG. 1, the outline | summary of the liquid crystal display device 1 which concerns on Example 1 of this invention is demonstrated.
The liquid crystal display device 1 according to the present embodiment is composed of a transflective liquid crystal display device, and is formed by providing various wirings on a rectangular light-transmitting electrical insulating material, for example, a substrate made of a glass plate. A TFT array substrate (hereinafter referred to as “AR substrate”) 2 and a color filter substrate (hereinafter referred to as “CF substrate”) 10 formed by applying various wirings on a substrate made of a rectangular light-transmitting electrically insulating material. Have. Among these, the AR substrate 2 having a larger size than the CF substrate 10 is used so that the protruding portion 2A having a predetermined space is formed when the AR substrate 2 is disposed to face the CF substrate 10. Further, a sealing material (not shown) is provided around the outside of the AR substrate 2 and the CF substrate 10.
Is attached, and the liquid crystal 14 and the spacer (not shown) are enclosed inside.

The AR substrate 2 has short sides 2a and 2b and long sides 2c and 2d that face each other. Among these, one short side 2b side is an overhang portion 2A, and a driver Dr made of a semiconductor chip for source and gate driving is mounted on the overhang portion 2A. The other short side 2a
Light detector LD ₁ is disposed on the side. In addition, a backlight (not shown) is provided on the back surface of the AR substrate 2 as illumination means. The backlight on the basis of the output of the light detector LD _1, are controlled by an external control circuit (control means), not shown.

The AR substrate 2 includes a plurality of gate wirings GW arranged at predetermined intervals in the row direction (lateral direction) in FIG. 1 on the opposite surface, that is, the surface in contact with the liquid crystal 14, and these gate wirings G.
And a plurality of source lines SW insulated from W and arranged in the column direction (vertical direction). The source wiring SW and the gate wiring GW are wired in a matrix, and switching that is turned on by a scanning signal from the gate wiring GW in each region surrounded by the gate wiring GW and the source wiring SW intersecting each other. A pixel electrode 26 (see FIG. 2B) to which a TFT as an element (see FIG. 2A) and a video signal from the source wiring SW are supplied via a switching element.
Is formed.

Each region surrounded by the gate wiring GW and the source wiring SW is a so-called pixel region P.
An area in which a plurality of these pixel areas PA are formed is a display area DA. Note that the pixel area PA is divided into a reflection unit 22 that performs display by reflecting external light and a transmission unit 23 that performs display by transmitting light from the backlight.

Each gate line GW and each source line SW extend to the outer periphery of the display area DA, that is, to the frame area, and are routed around the frame area and connected to the driver Dr. Further, the first light detector LD _1, the 2TFT light sensor _LS 1, the lead wirings of the plurality of derived from LS _{2 L} 1 ~L ₄ is wired to one long side 2d side of the AR substrate 2 Terminal T ₁ to which an external control circuit is connected
It is connected to the through T _4. An external control circuit is connected to each of the terminals T _{1 to} T ₄ , and a reference voltage, a gate voltage, and the like are supplied from the control circuit to the light detection unit LD _1. Further, the light detection unit LD ₁
The output from is sent. The relationship between the first and second TFT photosensors LS ₁ and LS ₂ and the routing wires L _{1 to} L ₄ derived from these photosensors will be described later.

Next, a specific configuration of each pixel area PA will be described mainly with reference to FIGS. 2A and 2B.
In the display area DA of the AR substrate 2, the gate lines GW are formed so as to be parallel to each other at equal intervals, and the gate electrode G of the TFT is extended from the gate line GW. In addition, an auxiliary capacitance line 16 is formed substantially in the center between the adjacent gate lines GW in parallel with the gate line GW. The auxiliary capacitance line 16 has an auxiliary capacitance electrode 17 formed by expanding the auxiliary capacitance line 16.
Is provided.

A gate insulating film 18 made of a transparent insulating material such as silicon nitride or silicon oxide is laminated on the entire surface of the AR substrate 2 so as to cover the gate wiring GW, the auxiliary capacitance line 16, the auxiliary capacitance electrode 17, and the gate electrode G. Yes. A semiconductor layer 19 made of amorphous silicon (a-Si) or the like is formed on the gate electrode G via a gate insulating film 18 thereon. A plurality of source lines SW are formed on the gate insulating film 18 so as to intersect the gate lines GW, and a source electrode S of the TFT is extended from the source lines SW so as to be in contact with the semiconductor layer 19. ing. Further, the drain electrode D made of the same material as the source wiring SW and the source electrode S is provided on the gate insulating film 18 so as to be in contact with the semiconductor layer 19.

Here, a region surrounded by the gate wiring GW and the source wiring SW corresponds to one pixel.
The gate electrode G, the gate insulating film 18, the semiconductor layer 19, the source electrode S, and the drain electrode D that are formed in this manner constitute a TFT. Further, the drain electrode D and the auxiliary capacitance electrode 1
7 forms an auxiliary capacitance of each pixel area PA.

A protective insulating film (also referred to as a passivation film) 20 made of, for example, an inorganic insulating material is laminated over the entire surface of the AR substrate 2 so as to cover these source wirings SW, TFTs, and the gate insulating film 18. An interlayer film (also referred to as a planarizing film) 21 made of an acrylic resin containing a negative photosensitive material is laminated over the entire AR substrate 2. The surface of the interlayer film 21 is formed with fine irregularities in the reflection portion 22 and flat in the transmission portion 23. In addition, in FIG. 2, the unevenness | corrugation in the reflection part 22 is abbreviate | omitting illustration. A contact hole 25 is formed at a position corresponding to the drain electrode D of the protective insulating film 20 and the interlayer film 21.

A reflecting plate 24 made of, for example, aluminum or aluminum alloy is formed on the surface of the interlayer film 21 of the reflecting portion 22 by sputtering or the like. Further, in each pixel, a pixel electrode 26 made of, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) is formed on the surface of the reflection plate 24, the contact hole 25, and the surface of the interlayer film 21 of the transmission portion 23. Is formed. Further, an alignment film (not shown) is laminated on the upper layer of the pixel electrode 26 so as to cover all the pixel regions PA.

A light shielding layer BM (see FIG. 4A or 4C) is formed on the surface of the CF substrate 10 so as to face the gate wiring GW and the source wiring SW of the AR substrate 2, and is surrounded by the light shielding layer BM. Corresponding to each pixel, a color filter layer 27 made of, for example, red (R), green (G), and blue (B) is provided. Further, a top coat layer 28 is formed on the surface of the color filter layer 27 at a position corresponding to the reflection portion 22, and the surface of the top coat layer 28 and the surface of the color filter layer 27 at a position corresponding to the transmission portion 23. A common electrode 29 and an alignment film (not shown) are stacked.

Then, the AR substrate 2 and the CF substrate 10 having the above-described configuration are bonded to each other through a sealing material, and finally, the liquid crystal 14 is sealed in a region surrounded by the both substrates and the sealing material. The liquid crystal display device 1 can be obtained. A polarizing plate (not shown) is provided on the outer surfaces of both substrates, and a backlight or sidelight having a well-known light source, a light guide plate, a diffusion sheet, etc. (not shown) is provided below the AR substrate 2. Be placed.

In the liquid crystal display device 1 described above, a reflective liquid crystal display panel can be obtained by providing the reflector 24 over the entire lower part of the pixel electrode 26. In the case of a reflective liquid crystal display device using this reflective liquid crystal display panel, a front light is used instead of a backlight or a side light. These backlights, side lights, and front lights constitute illumination means.

Next, the configuration of the light detection unit LD ₁ will be described with reference to FIGS. 1, 3A, and 3B. Although shown total of six light sensors ₃₀ 1 to 30 ₆ in FIG. 3, the optical sensor ₃₀ 1 - 30
The number of ₆ is not limited to six, it is possible to appropriately change the number as long as it is two or more.

The light detection unit LD ₁ is composed of first and second TFT photosensors LS ₁ and LS ₂ composed of two systems. Each of the first and second TFT photosensors LS ₁ and LS ₂ includes a plurality of (
In FIG. 3, three optical sensors 30 ₁ to 30 ₃ and 30 ₄ to 30 ₆ are provided. The optical sensor _{301 to 303} constituting the first 1TFT light sensor LS ₁ second 2TFT light sensor LS ₂
The optical sensors 30 ₄ to 30 ₆ constituting each of the optical sensors 30 are provided in a row in a state of being adjacent to and parallel to each other.

The circuit configuration of the first and second TFT photosensors LS ₁ and LS ₂ will be described with reference to FIG. 3B.
The plurality of optical sensors 30 ₁ to 30 ₆ include drain electrodes D _{L1 to} D _L6 and source electrodes S _L1.
Capacitors C _{1 to} C ₆ are connected in parallel between ˜S _L6 , respectively. Further, one terminal of the source electrodes S _{L1 to} S _L6 and the capacitors C _{1 to} C ₆ is connected to the terminals T ₁ and T ₂ through the lead wirings L ₁ and L ₂ , and this terminal T ₁ and T ₂ are connected to the first reference voltage source Vs via the switching elements SW1 and SW2. Furthermore, the optical sensor 3
The other terminals of the drain electrodes D _{L1 to} D _L6 and the capacitors C _{1 to} C ₆ of 0 ₁ to 30 ₆ are connected to the terminal T ₃ via a single lead wiring L ₃ , and this terminal T ₃ Is connected to a second reference voltage source Vref for supplying a predetermined DC voltage. Furthermore, output lines are connected to the terminals T ₁ and T ₂ , respectively, and predetermined output voltages S _S and S _R are output from the output lines. Furthermore, the gate electrodes G _{L1 to} G _L6 of the optical sensors 30 ₁ to 30 ₆ are connected to a terminal T ₄ via a lead wiring L ₄ , and this terminal T ₄ is connected to a predetermined voltage supply source GV.
It is connected to the.

The detected output voltage is used for detection of ambient light intensity by a detection circuit (not shown).
Based on the detected intensity of ambient light, the backlight (illuminating means) is controlled by a control means (not shown). As this detection circuit, for example, it is converted into an analog output voltage by a known sampling and holding circuit synchronized with on / off of the switch elements SW1 and SW2, and this analog output voltage is digitally converted by an A / D converter and then digital arithmetic processing is performed. Use what you want.

The plurality of photosensors 30 ₁ to 30 ₃ and 30 ₁ to 30 ₆ are all composed of TFTs having the same configuration, and these TFTs are formed at the same time as TFTs that are formed as switching elements in the manufacturing process of the liquid crystal display panel. ing. Accordingly, it is not necessary to increase the number of manufacturing steps separately for forming the optical sensor, and hence it is possible to manufacture the sensor at low cost and easily.

Hereinafter, these among optical sensors, the configuration of the respective one of the optical sensor 30 ₁ and the optical sensor 30 ₄ with reference to FIGS.
Light sensor 30 ₁ which constitutes the first 1TFT light sensor LS _1, as shown in FIGS. 3A and 4A, on AR substrate 2, first, the gate electrode _{G L1} is formed. The gate electrode G _L1 is extended to the outside of the lead wirings L ₁ arranged in parallel with the gate electrode G _L1, as a light-shielding member which light from the backlight is prevented from entering the light receiving portion It also has the function. A gate insulating film 18 made of a transparent insulating material is formed on the gate electrode _GL1 . In a region overlapping the gate electrode _GL1 in plan view on the gate insulating film 18, a semiconductor layer 31 made of amorphous silicon or polycrystalline silicon and serving as an ambient light receiving portion is formed.
On the semiconductor layer 31, one side of the semiconductor layer 31, more specifically, the first TFT photosensor LS ₁
A plurality of source electrodes S _L1 so as to cross the semiconductor layer 31 from the side which lies opposite the side adjacent to the 2TFT light sensor LS ₂ of is formed. At the same time, the other side of the semiconductor layer 31, i.e., a plurality of drain electrodes _{D L1} to well across the semiconductor layer 31 from the side adjacent to the 2TFT light sensor LS ₂ of the 1TFT light sensor LS ₁ is formed . The source electrode S _L1 is connected is split and branched into a plurality of the lead wires L _1.
That is, the source electrode S _L1 is divided and branched in a substantially comb shape in plan view, and is connected to the outer routing wiring L ₁ . Similarly, the drain electrode D _L1 be divided into a plurality of, divided electrodes so as to be disposed between the source electrode, the end portion is connected to the inside of the lead wire L _3. Further, a protective insulating film 20 is formed on the upper layer of the source electrode S _L1 and the drain electrode D _L1 .

As shown in FIG. 4B, the gate electrode G _L1 includes the gate electrode G _L1 and the source electrode S _L.
A hole H ₁ having a predetermined size is formed at a location where the routing wiring L ₁ derived from ₁ overlaps with the gate insulating film 18 interposed therebetween. The hole H ₁ is covered with the lead wiring L ₁ through the gate insulating film 18.

The gate electrode G _L in place in this manner to overlap with the gate electrode G _L1 and the lead wirings L ₁ is
When forming a hole H ₁ to _1, since it reduces the overlapping area between the lead wirings L ₁ derived from the gate electrode G _L1 and the source electrode S _L1, capacitance formed between them is reduced.
Further, the hole _H 2 to the gate electrode _{G L1} of the hole _{H 1} similarly to other optical sensors ₃₀ 2, 30 ₃ of the gate electrodes _{G L1, H 3} are formed. Therefore, the capacitance formed between the gate electrode G _{L1 of the first} TFT photosensor LS ₁ and the lead wiring L ₁ , that is, the source wiring is reduced. Lead wires L ₁ has a width dimension that completely covers and light leakage holes H ₁ to H ₃ provided on the gate electrode G _L1 does not occur, the other holes H _2, H ₃ even if the same structure Yes. Note that a notch can be formed in the gate electrode instead of the holes H _{1 to} H ₃ .

As shown in FIG. 4A, the overcoat layer optical sensor 30 ₁ is made of a transparent resin in a region facing the CF substrate 10 (planarizing film) 32 via a disposed a window portion W environmental light is irradiated .
Further, the periphery of the window W is shielded from light by the light shielding layer BM. Other optical sensors 30
₂ and 30 ₃ have the same configuration. By shielding the periphery of the window W with the light shielding layer BM in this manner, the semiconductor layer 31 is hardly irradiated with light other than the ambient light, and the ambient light can be received more accurately.

Further, similarly to the lead wirings _{L 3} and overlaps the hole to the gate electrode _G L1 _{~G L3 Ha~Hc}
Is provided. Further, these holes Ha to Hc are completely covered by the routing wiring L ₃ as the drain wiring derived from the drain electrodes D _{L1 to} D _L3 .

4C and 4D show an optical sensor 30 ₄ constituting the first 2TFT light sensor LS _2. This optical sensor 30 ₄ has substantially the same structure as the optical sensor 30 ₁ of the CF substrate 1
The difference is that the window portion W is not formed at zero. That is, the optical sensor 30 ₄ is the gate insulating film 18 made of a transparent insulating material so as to cover the gate electrode G _L4 which extends to the outside of the lead wirings L ₂ is formed on the gate insulating film G _L4 are A semiconductor layer 31 made of amorphous silicon or polycrystalline silicon and serving as a light receiving portion for ambient light is formed. Further, on the semiconductor layer 31, one side of the semiconductor layer 31, specifically first 1T of the 2TFT light sensor LS ₂
A plurality of source electrodes S _L4 are formed so as to cross the semiconductor layer 31 from the side portion located opposite to the side portion adjacent to the FT photosensor LS ₁ . At the same time, the other side of the semiconductor layer 31, details are also the plurality of drain electrodes _{D L4} so as to cross the semiconductor layer 31 formed from the side adjacent to the 1TFT light sensor LS ₁ of the 2TFT light sensor LS ₂ Yes. Source electrode S
Since _L4 is a plurality of formed so as to extend from the lead wirings L ₂ which are routed in parallel with the gate electrode G _L4 outside the second 2TFT light sensor LS _2, the source electrode S _L4 in a plan view It is almost comb-shaped. Similarly, a plurality of drain electrodes D _L4 are formed so as to extend from the lead wiring L ₃ routed inside the second TFT photosensor LS ₂ , and the combs are seen in a plan view like the source electrode S _L4. It has a tooth shape. A protective insulating film 20 is formed on the upper layer of the source electrode S _L4 and the drain electrode D _L4 .

The optical sensor 30 ₄ is shielded by the light shielding layer BM which is formed in a region facing the CF substrate 10. Therefore, there is little that the environment light is received in the optical sensor 30 _4, the output of the optical sensor 30 ₄ is used as a dark reference voltage. Furthermore, as described above, the drain electrodes D _{L4 to} D _{L6 of} the second TFT photosensor LS ₂ and the first TFT photosensor L
The drain electrodes D _{L1 to} D _{L3 of} S ₁ are connected to the terminal T ₃ by a single lead wiring L ₃ . However, the voltage supplied via the lead wire L _3, the second reference voltage source Vre
Since the voltage is from f, both the first and second TFT photosensors LS ₁ and LS ₂ can operate normally. In the present embodiment, the light sensor 30 ₄ has been described as being shielded by the light shielding layer BM, it may be limiting the light received by the predetermined color color filter in place of the light-shielding layer BM .

To the gate electrode G _L4 of the optical sensor 30 _4, lead wiring L ₂ and a predetermined at a location that overlaps with the gate insulating film 18 size hole H ₄ of which is formed is derived from the source electrode S _L4 of TFT Is formed. Thus, the gate electrode G _L4 and the routing wiring L as the source wiring
By drilling holes _{H 4} to the gate electrodes _{G L4 of} a portion ₂ and overlap, the gate electrode _{G L4}
Capacitance formed between the lead wirings L ₂ and is reduced. Similarly to the gate electrode G _L4 , holes H ₅ and H ₆ are formed in the gate electrodes G _L5 and G _L6 of the other optical sensors 30 ₅ and 30 ₆ . Therefore, the capacitance formed between the gate electrodes G _{L4 to} G _{L6 of} the second TFT photosensor LS ₂ and the lead wiring L ₂ is significantly reduced. Incidentally, the lead wirings _{L 3} Holes _{H 4}
To H ₆ completely covers and light leakage has a width dimension that does not generate.

Further, similarly, the holes Ha to Hc are formed in the gate electrodes G _{L4 to} G _L6 that overlap with the routing wiring L _3.
Is provided. Further, these holes Ha to Hc are completely covered by the routing wiring L ₃ as the drain wiring derived from the drain electrodes D _{L4 to} D _L6 .

The light detection unit LD ₁ having the above-described configuration performs light detection by the following method. That is,
First, first, through a terminal _{T 4} and lead wire _{L 4} from the 2TFT light sensor _LS 1, the gate electrode of each of the optical sensors ₃₀ 1 to 30 ₆ LS _{2 G} L1 _{~G L6} voltage supply to the GV A constant reverse bias voltage (for example, −10 V) serving as a gate-off region is applied, and a predetermined voltage from the second reference voltage source Vref is applied to the drain electrodes D _{L1 to} D _L6 . Next, capacitors C _{1 to} C ₆ are connected between the drain electrodes D _{L1 to} D _L6 and the source electrodes S _{L1 to} S _L6 . Then, one or both of the switch elements SW1 and SW2 are turned on to apply a predetermined voltage (for example, +2 V) from the first reference voltage source Vs to the capacitors C _{1 to} C ₃ and / or C ₄ to C.
₆ is applied to both ends, and the switch elements SW1 and / or SW2 are turned off after a predetermined time. After that, when a predetermined time has elapsed, the charging voltage of the capacitors C _{1 to} C ₃ and / or C _{4 to} C ₆ is output to the output line, and the charging voltage is supplied to the detection circuit to detect the intensity of the ambient light. be able to.

As described above, according to the liquid crystal display device 1 according to the first embodiment of the present invention, the gate electrode G
_{L1 to} G _L6 are a plurality of holes H _{1 to} H ₃ , H at locations where they overlap with the routing lines L _{1 to} L _3.
Since a to Hc and H _{4 to} H ₆ are formed, the capacitance formed between the routing wirings L _{1 to} L ₃ and the gate electrodes G _{L1 to} G _L6 via the gate insulating film 18 is reduced. Is done. When this capacity increases, the time constant of the output wiring derived from the optical sensors 30 ₁ to 30 ₆ increases and it takes a long time to detect and output the ambient light, and a quick detection result cannot be obtained. There is a risk of poor response. However, the detection time can be shortened by reducing the capacitance formed between the routing wirings L _{1 to} L ₃ and the gate electrodes G _{L1 to} G _L6 as described above.

(Modification)
With reference to FIG. 5, a modification of the light detection unit in the liquid crystal display device of Embodiment 1 will be described.
As illustrated in FIG. 5A, the light detection unit LD _{1A according} to the present modification has substantially the same configuration as the above-described light detection unit LD _1, and the different configurations are the gate electrodes G _{L1 to} G G of the light detection unit LD _{1A. L6} is in a point that is narrower than the gate electrodes G _{L1 to} G _L6 of the light detection unit LD ₁ described above.

The light detection unit LD _1A is composed of first and second TFT photosensors LS ₁ and LS ₂ composed of two systems. Each of the first and second TFT photosensors LS ₁ and LS ₂ includes three photosensors 30 ₁ to 30 ₃ and photosensors 30 ₄ to 30 ₆ . Then, as shown in FIG. 5B, the portion where the gate electrode G _L1 and the routing wiring L ₁ derived from the source electrode S _L1 and the routing wiring L ₃ derived from the drain electrode D _L1 are overlapped is the gate electrode G The overlap area is reduced as much as _L1 is reduced. At this time, a part of the gate electrode G _L1 and the routing wirings L ₁ and L ₃ are stacked so that no gap is formed between them. Incidentally, there is shown an enlarged main part for the optical sensor 30 ₁ in FIG. 5B, also it has the same configuration other gate electrode G _L2, G _L3.

Further, similarly to the gate electrode _G L4 _{~G L6} and lead wirings _{L 2} and overlap portions which are connected to the source electrode _S L4 _{to S L6} also divided the area of the gate electrode _G L4 _{~G L6} is reduced Only its overlapping area is small.

Furthermore, similarly to the lead wirings _{L 3} which is connected to the gate electrode _G L4 _{~G L6} and the drain electrode _D L4 _{to D L6} and overlap portions also, the area of the gate electrode _G L4 _{~G L6} is reduced The overlapping area is reduced by the amount.

With this configuration, the capacitance formed between the gate electrodes G _{L1 to} G _L6 and the routing wirings L _{1 to} L ₃ is significantly reduced. Further, the edges of the gate electrodes G _{L1 to} G _L6 are routed to the lead wiring L.
The gap between covered with ₁ ~L ₃ are stacked so as not to cause the light from the backlight is well shielded. Furthermore, it is more preferable to increase the area of the source wiring and the drain wiring, that is, to widen the routing wirings L ₁ and L ₂ , because the wiring resistance is reduced. That is,
The gate electrodes G _{L4 to} G _{L6 according} to the present modification are arranged so that only the outer edge portions thereof are superimposed on the routing wirings L _{1 to} L ₃ in plan view, that is, the most of the routing wirings L _{1 to} L ₃ . 1, has a configuration extending to a portion adjacent to the 2TFT light sensor _LS 1, LS _2. Note that the overlapping width at this time can be appropriately adjusted within a range in which light leakage does not occur.

Next, a transflective liquid crystal display device according to Example 2 of the present invention will be described with reference to FIGS.
The liquid crystal display device 1A according to the second embodiment is different from the liquid crystal display device 1 according to the first embodiment in the arrangement structure of the photosensors constituting the light detection unit, and the other configurations are the same. The liquid crystal display device 1A includes a liquid crystal display device 1 of Example 1, the array structure of an optical sensor constituting the light detector LD ₁ is, though the latter are arranged in two rows as shown in FIG. 1 On the other hand, the former is characterized in that it is arranged in a line as shown in FIG. That is, the light detector LD ₂ has mounting structure of the optical sensor ₄₀ 1-40 ₄ and lead wires _L 1 ~L ₃ is different only, since the other configurations are the same as those of Example 1 Those having the same configuration will be described with reference to the reference numerals in the first embodiment.

Light detector LD ₂ of the liquid crystal display device 1A, a plurality of light sensors (e.g., _four) 40 1-40 ₄
Are arranged in a row. Among these plural optical sensors 40 ₁ to 40 ₄ , the optical sensor 40 ₁
And 40 ₃ have the same structure as the optical sensor _{301 to 303} of the 1TFT light sensor LS ₁ of Example 1, an optical sensor of the optical sensor 40 ₂ and 40 ₄ are the 2TFT light sensor LS ₂ of Example 1 3
It has the same configuration as 0 ₄ to 30 ₆ . That is, the optical sensor 40 ₂ and 40 ₄ of the optical sensor 40 ₁ and 40 ₃ of the the 1TFT light sensor LS ₁ as a 2TFT light sensor LS ₂
Are alternately arranged in the same straight line.

Further, the optical sensors 40 ₁ and 40 ₃ of the first TFT optical sensor LS ₁ are the same as those shown in FIG.
The gate electrodes G _L1 and G _L3 are extended to the outside of the lead wiring L ₁ connected to the source electrodes S _L1 and S _L3 . The second TFT photosensor LS ₂
The optical sensors 40 ₂ and 40 ₄ have the same structure as that shown in FIG. 4 of the first embodiment, and the gate electrodes G _L2 and G _L4 are connected to the source electrodes S _L2 and S _{L4. 2} is extended to the outside. The routing wirings L ₁ and L ₂ connected to the source electrodes S _{L1 to} S _L4 are provided in parallel to each other, and the routing wirings L ₁ and L ₂ are branched in the middle of each optical sensor. Source electrodes S _{L1 to} S _L4 of 40 ₁ to 40 ₄ are formed.

Furthermore, the optical sensors 40 ₁ to 40 ₄ have drain electrodes D _{L1 to} D _L4 wired so as to face the source electrodes S _{L1 to} S _L4 . The drain electrodes D _{L1 to} D _L4 are connected to a lead wiring L ₃ that is arranged to meander between the optical sensors 40 ₁ to 40 ₄ . In addition, holes H _{1 to} H ₄ are formed in the gate electrodes G _{L1 to} G _L4 at positions where the gate electrodes G _{L1 to} G _L4 and the routing wirings L ₁ and L ₂ overlap with each other as in the first embodiment. ing. Although not forming a hole at a position overlapping with the lead wiring L ₃ of 7 gate electrode G _L1 ~G _L4, it is of course possible to appropriately form.

As described above, also in the second embodiment, the gate electrode G is the same as that shown in the first embodiment.
Capacitance formed between the _L1 ~G _L4 and lead wirings _L 1 ~L ₃ is significantly reduced. In addition, when the number of photosensors of the second embodiment is the same as that of the first embodiment, the arrangement of the photosensors is wider than that of the first embodiment. Even if the light is blocked, stable detection can be maintained.

(Modification)
With reference to FIG. 8, a modification of the light detection unit in the liquid crystal display device according to the second embodiment will be described.
Light detection unit _{LD 2A} according to the modified example has substantially the same structure as the light detector LD _2, different configurations, the gate electrode of the gate electrode _G L1 _{~G L4} light detector LD _{2 G} L1 _{~G L4} It is at a more narrow point.

Light detection unit _{LD 2A} is composed of a first 1TFT light sensor LS ₁ consists of two lines and the 2TFT light sensor LS _2. These first and second TFT photosensors LS ₁ , LS ₂ are
Two optical sensors 50 ₁ , 50 ₃ and 50 ₂ , 50 ₄ are provided. Among these, in the photosensors 50 ₁ and 50 ₃ constituting the _first TFT photosensor LS ₁ , the gate electrode G _L1
Lead wirings L ₁ and is a part overlapping with, as shown in FIG. 7B, an amount corresponding to the gate electrode G _L1 is reduced width is the overlapping area is smaller. At this time, it is preferable that a part of the gate electrode G _L1 and the routing wiring L ₁ are laminated so that no gap is formed between them. By the way,
Are shown an enlarged main part for the optical sensor 50 ₁ in FIG. 7B, also have the same configuration other gate electrode G _L3. Further, in the optical sensor ₅₀ 2, 50 ₄ the first 2TFT light sensors LS ₂ configuration, places where the gate electrode _{G L2, G L4} and lead wirings _{L 2} overlap, the gate electrode _{G L2, G L4} are reduced width The overlapping area is reduced by the amount that is applied.

With this configuration, the capacitance formed between the gate electrodes G _{L1 to} G _L4 and the routing wirings L ₁ and L ₂ is significantly reduced. Further, the edges of the gate electrodes G _{L1 to} G _L4 are routed to the lead wiring L.
₁ and L ₂ are laminated so that no gaps are formed between them, so that light from the backlight is well shielded. Furthermore, it is more preferable to increase the area of the source wiring and the drain wiring, that is, to widen the routing wirings L ₁ and L ₂ , because the wiring resistance is reduced. That is,
The gate electrodes G _{L4 to} G _{L6 according} to the present modification are arranged so that only the outer edge portions thereof are superimposed on the routing wirings L _{1 to} L ₃ in plan view, that is, the most of the routing wirings L _{1 to} L ₃ . 1, has a configuration extending to a portion adjacent to the 2TFT light sensor _LS 1, LS _2. Note that the overlapping width at this time can be appropriately adjusted within a range in which light leakage does not occur.

The transflective liquid crystal display devices 1 and 1A of the present invention as described above can be used for electronic devices such as personal computers, mobile phones, and portable information terminals. FIG. 9A shows a personal computer 70 equipped with a liquid crystal display device 71, and FIG. 9B shows a liquid crystal display device 76.
It is a figure which shows the mobile telephone 75 which mounts. Since the basic configurations of the personal computer 70 and the cellular phone 75 are well known to those skilled in the art, a detailed description thereof will be omitted.

FIG. 1 is a plan view schematically showing an AR substrate as seen through a color filter substrate of a transflective liquid crystal display device according to Embodiment 1 of the present invention. 2 shows one pixel of the AR substrate of FIG. 1, FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along the line IIB-IIB of FIG. 2A. FIG. 3 shows the light detection unit of FIG. 1, FIG. 3A is an enlarged plan view of the detection unit, and FIG. 3B is an equivalent circuit diagram of the light detection unit. 4A is a cross-sectional view taken along the line IVA-IVA, FIG. 4B is a cross-sectional view taken along the line IVB-IVB, and FIG. 4C is a cross-sectional view taken along the line IVC-IVC. 4D is a sectional view taken along line IVD-IVD. FIG. 5 shows a modification of the light detection unit in FIG. 1, FIG. 5A is an enlarged plan view of the detection unit, and FIG. 5B is a cross-sectional view taken along line VB-VB in FIG. 5A. FIG. 6 is a plan view schematically showing an AR substrate as seen through a color filter substrate of a transflective liquid crystal display device according to Embodiment 2 of the present invention. 7 shows the light detection unit of FIG. 6, FIG. 7A is an enlarged plan view of the detection unit, and FIG. 7B is a sectional view taken along the line VIIB-VIIB of FIG. 7A. 8 shows a modification of the light detection unit in FIG. 7, FIG. 8A is an enlarged plan view of the detection unit, and FIG. 8B is a sectional view taken along line VIIIB-VIIIB in FIG. 7A. 9A is a diagram showing a personal computer equipped with a liquid crystal display device, and FIG. 9B is a diagram showing a mobile phone equipped with a liquid crystal display device. FIG. 10A is a plan view of the optical sensor, and FIG. 10B is a cross-sectional view taken along line XB-XB in FIG. 10A. 11A is a diagram showing an example of a voltage-current curve of the TFT photosensor, FIG. 11B is an operation circuit diagram of the TFT photosensor, and FIG. 11C is a diagram showing a voltage-time curve at both ends of the capacitor when the brightness is different.

Explanation of symbols

1, 1A: Transflective liquid crystal display device 2: AR substrate 10: CF substrate 14: Liquid crystal 18
: Gate insulating film 19, 31: Semiconductor layer 20: Protective insulating film 21: Interlayer film 22: Reflecting portion 23: Transmitting portion 24: Reflecting plate 25: Contact hole 26: Pixel electrode 27: Color filter layer 28: Topcoat layer 30 ₁ to 30 ₆ , 40 ₁ to 40 ₄ , 50 _{1 to} 5
0 ₄ : Optical sensor GW: Gate wiring SW: Source wiring DA: Display area PA: Pixel area LD ₁ , LD _1A , L ₂ , LD _2A : Photodetector LS ₁ : First TFT optical sensor LS
₂ : Second TFT optical sensor S _{L1 to} S _L6 : Source electrodes D _{L1 to} D _L6 : Drain electrodes G _{L1 to} G _L6 : Gate electrodes C _{1 to} C ₆ : Capacitor Vs: First reference voltage source Vr
ef: second reference voltage source SW1, SW2: switch elements Dr: Driver L ₁ ~L _4:
Lead wirings T ₁ through T _4: Terminal BM: shielding layer W: window

Claims (8)

A liquid crystal display panel in which a liquid crystal layer is interposed between a pair of first and second substrates, and a thin film transistor (hereinafter referred to as TFT) that is incorporated in the substrate of the liquid crystal display panel and detects external light
A light detection unit having a TFT photosensor, an illumination unit for illuminating the liquid crystal display panel, a detection circuit connected to the light detection unit, and the brightness of the illumination unit based on the output of the detection circuit A liquid crystal display device comprising: control means for controlling the thickness;
The gate electrode of the TFT photosensor and the source wiring and drain wiring derived from the source electrode and drain electrode are arranged in parallel, and no gap is generated between the gate electrode and the source wiring and drain wiring. As described above, the outer edge portion of the gate electrode is covered with the source wiring and the drain wiring through the insulating member in a plan view. The hole or the notch of predetermined size is formed in the location covered with the said source wiring and drain wiring via the said insulating member by planar view of the said gate electrode. The liquid crystal display device described. The photodetecting unit includes a plurality of TFT photosensors, and the plurality of TFT photosensors are divided into first and second TFT photosensors that detect light of different systems, and the first TFT photosensor and the first TFT photosensor 2. The liquid crystal display device according to claim 1, wherein among the source wiring or drain wiring of the 2 TFT photosensor, wirings not connected to the detection circuit are formed by a single wiring. 4. The plurality of photosensors of the first and second TFT photosensors, wherein the first TFT photosensor and the second TFT photosensor are arranged adjacent to each other in parallel.
A liquid crystal display device according to 1. 4. The liquid crystal according to claim 3, wherein in the plurality of photosensors of the first and second TFT photosensors, the first TFT photosensor and the second TFT photosensor are alternately arranged in the same row. Display device. 4. The liquid crystal display device according to claim 3, wherein at least one of the first and second TFT photosensors is covered with a light shielding layer or a color filter layer of a predetermined color. The liquid crystal display device according to claim 1, wherein the TFT photosensor is formed simultaneously with a TFT formed as a switching element in a manufacturing process of the liquid crystal display panel.   An electronic apparatus comprising the liquid crystal display device according to claim 1.

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