TW200813443A - Power level detector - Google Patents
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- TW200813443A TW200813443A TW95149874A TW95149874A TW200813443A TW 200813443 A TW200813443 A TW 200813443A TW 95149874 A TW95149874 A TW 95149874A TW 95149874 A TW95149874 A TW 95149874A TW 200813443 A TW200813443 A TW 200813443A
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200813443 九、發明說明: 【發明所屬之技術領域】 本案係有關於一種電壓源準位偵测裝置(P〇Wer detector) 〇 【先前技術】200813443 IX. Invention Description: [Technical field of invention] This case relates to a voltage source level detecting device (P〇Wer detector) 〇 [Prior Art]
第1圖為一種傳統電壓源準位偵測裝置100,用以偵 測一晶片所使用的電壓源VDD之準位,其中包括一能隙參 考電壓產生 |§ (Bandgap Voltage Generator) 102、一债測電壓 產生電路104、以及一比較器CMP。該能隙參考電壓產生 器102常見於一般積體電路晶片中,乃用來產生一能隙參 生後,分壓该電壓源vDD,產生一彳貞測電壓v細。如第 圖所示,该能隙參考電壓VBG產生後,電晶體導通、 考電壓vBG供晶片參考。該能隙參考電壓Vbg為固定值(通 常為1.25伏特)不受溫度影響、亦不隨電壓源飄移。 該偵測電壓產生電路1〇4包括三個電晶體(河1、]^2、與]^3) 以及兩個電阻(心與R2),乃用來在該能隙參考電壓v阳產 電晶體M2操作在飽和區(saturation regi〇n)、並且電晶體 Ms導通且產生一電流流經上述電阻心與尺2。由於電^體 Μ;的面積遠大於電晶體吣,因此電晶體吣操作在線= (linear region),以電阻型態操作,其電阻值為玟、 ^ R〇n、Ri、與I將該電壓源VDD分壓後輸出今^ °η°電随 Vdet。該比較器CMP比較該偵測電壓Vdet以及剛電壓 電壓VBG後,輪出一旗標Flag標示比較結果,/把隙參考FIG. 1 is a conventional voltage source level detecting device 100 for detecting the level of a voltage source VDD used by a chip, including a bandgap voltage generator, § (Bandgap Voltage Generator) 102, and a debt. The voltage generating circuit 104 and a comparator CMP are measured. The bandgap reference voltage generator 102 is commonly used in a general integrated circuit chip to generate a bandgap and divide the voltage source vDD to produce a measured voltage v. As shown in the figure, after the bandgap reference voltage VBG is generated, the transistor is turned on and the test voltage vBG is supplied to the wafer for reference. The bandgap reference voltage Vbg is a fixed value (typically 1.25 volts) that is unaffected by temperature and does not drift with the voltage source. The detection voltage generating circuit 1〇4 includes three transistors (River 1, 2, and 3) and two resistors (heart and R2), which are used to generate voltage in the gap reference voltage The crystal M2 is operated in a saturation region, and the transistor Ms is turned on and generates a current flowing through the above-mentioned resistor core and the ruler 2. Since the area of the electrode is much larger than that of the transistor, the transistor is operated in a linear region and operates in a resistive state with a resistance value of 玟, ^ R〇n, Ri, and I. After the source VDD is divided, the output is now ^°η° with Vdet. After comparing the detection voltage Vdet and the voltage voltage VBG, the comparator CMP rotates a flag Flag to indicate a comparison result, and the gap reference
Clienfs Docket No.: VIT06-0147 么、岁敷Ί女 TT^s Docket No:0608-A41005-TW/Final /Glorious Tien ^ 200813443 電壓源vDD目前的準位。 然而,該電壓源VDD遭重置(reset)時,上述傳統電壓 源準位偵測裝置100常發生錯誤。因為該能隙參考電壓產 生器102在電壓源VDD被重置後,並不是立即產生該能隙 參考電壓VbG ;必須在該電壓源V|)D回復至一準位以後, 才會產生該能隙參考電壓Vbg。舉例說明之’假設Vdd為 5V,該電壓源VDD被重置後,該能隙參考電壓產生器102 一開始並不會輸出該能隙參考電壓VBG,必須等到該電壓 • 源VDD回升至一準位(例如2.5V)後才會產生該能隙參考電 壓vBG。如此一來,該電壓源VDD遭重置後尚未回升至該 準位的這一段時間,該比較器CMP的兩個輸入信號(該能 隙參考電壓VBG以及該偵測電壓Vdet)都還沒有準備好,因 此該比較器CMP的運作會發生錯誤。 【發明内容】 本發明提供一種新穎的電壓源準位偵測裝置,可避免 • 上述傳統電壓源準位偵測裝置100在電壓源重置時所發生 的問題。 本發明所提出的電壓源準位偵測裝置包括一電壓源分 壓器、一能隙參考電壓產生器、一比較電路、一控制電路、 以及一強制電路。該電壓源分壓器乃用來分壓一電壓源, 以產生一偵測電壓。在重置(reset)該電壓源後,該能隙參 考電壓產生器會在該電壓源回復至一準位後,產生一能隙 參考電壓。該比較電路乃用來比較該偵測電壓以及該能隙 參考電壓,以判斷該電壓源的準位。在該能隙參考電壓尚Clienfs Docket No.: VIT06-0147 么, aged niece TT^s Docket No:0608-A41005-TW/Final /Glorious Tien ^ 200813443 Voltage source vDD current level. However, when the voltage source VDD is reset, the conventional voltage source level detecting device 100 often causes an error. Because the bandgap reference voltage generator 102 does not immediately generate the bandgap reference voltage VbG after the voltage source VDD is reset; it must be generated after the voltage source V|)D returns to a level. The gap reference voltage Vbg. For example, assuming that Vdd is 5V, after the voltage source VDD is reset, the bandgap reference voltage generator 102 does not output the bandgap reference voltage VBG at first, and must wait until the voltage source VDD rises to a level. The bandgap reference voltage vBG is generated after a bit (for example, 2.5V). As a result, after the voltage source VDD is reset and has not recovered to the level, the two input signals of the comparator CMP (the gap reference voltage VBG and the detection voltage Vdet) are not yet prepared. Ok, so the operation of the comparator CMP will be wrong. SUMMARY OF THE INVENTION The present invention provides a novel voltage source level detecting device that avoids the problems that occur when the conventional voltage source level detecting device 100 is reset at a voltage source. The voltage source level detecting device proposed by the present invention comprises a voltage source voltage divider, a bandgap reference voltage generator, a comparison circuit, a control circuit, and a forcing circuit. The voltage source voltage divider is used to divide a voltage source to generate a detection voltage. After resetting the voltage source, the bandgap reference voltage generator generates a bandgap reference voltage after the voltage source returns to a level. The comparison circuit is configured to compare the detection voltage and the gap reference voltage to determine the level of the voltage source. The energy gap reference voltage is still
Client’s Docket N〇.:VIT06-0147 TT,s Docket No:0608-A41005-TW/Final /Glorious—Tien 200813443 未產生時’該控制電路會去能(disable)該比較電路 能隙ί考電壓產生後,該控制電路由去能該比較電路域 成致以enableM比較電路。該強制接於該比較電路 之輸出端’㈣控制電路㈣。在觀較電路為去能狀態 日寸該強制電路會強制該比較電路之輪出端電壓為一定 值,以避免該比較電路輪出錯誤信息。 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂’下文特舉出較佳實施例,並配合所_式作詳細 說明。、 【實施方式】 第2圖為本發明之電廢源準位铺測裝置的示意圖,其 中,一電壓源準位偵測裝置2⑻包括一電壓源分壓器2〇2'、 一能隙參考電壓產生器2〇4、一比較電路206、一控制電路 208、以及一強制電路21〇。該電壓源分壓器2〇2將一電壓 源vDD分壓後,輸出一偵測電壓Vdet。該偵測電壓v—為 ❿該電壓源vdd之分壓。該能隙參考電壓產生器204乃用來 產生具有固定値的一能隙參考電壓VBG。當該電壓源vDD 發生重置(reset)時,該能隙參考電壓產生器2〇4必須等待 該電壓源VDD回升至一準位後,才會產生該能隙參考電壓 VBG。該比較電路206乃用來比較該偵測電壓vdet以及該 能隙參考電壓VBG,以判斷該電壓源VDD的準位。該比較 電路206的致能/去能(enable/disable)由該控制電路208控 制。在該能隙參考電壓Vbg尚未產生時’該控制電路208 的動作為去能(disable)該比較電路206。在該能隙參考電壓Client's Docket N〇.:VIT06-0147 TT,s Docket No:0608-A41005-TW/Final /Glorious—Tien 200813443 When not generated, the control circuit will disable the comparison circuit energy gap. The control circuit is configured to enable the comparison circuit to form an enableM comparison circuit. This is forcibly connected to the output terminal of the comparison circuit (4) control circuit (4). When the viewing circuit is in the de-energized state, the forcing circuit forces the voltage of the output terminal of the comparison circuit to be a certain value to prevent the comparison circuit from rotating an error message. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment] FIG. 2 is a schematic diagram of an electric waste source leveling device according to the present invention, wherein a voltage source level detecting device 2 (8) includes a voltage source voltage divider 2〇2', a bandgap reference The voltage generator 2〇4, a comparison circuit 206, a control circuit 208, and a forcing circuit 21〇. The voltage source voltage divider 2〇2 divides a voltage source vDD and outputs a detection voltage Vdet. The detection voltage v - is the partial pressure of the voltage source vdd. The bandgap reference voltage generator 204 is used to generate a bandgap reference voltage VBG having a fixed chirp. When the voltage source vDD is reset, the bandgap reference voltage generator 2〇4 must wait for the voltage source VDD to rise to a level before generating the bandgap reference voltage VBG. The comparison circuit 206 is configured to compare the detection voltage vdet and the gap reference voltage VBG to determine the level of the voltage source VDD. The enable/disable of the comparison circuit 206 is controlled by the control circuit 208. The operation of the control circuit 208 is to disable the comparison circuit 206 when the bandgap reference voltage Vbg has not yet been generated. The gap reference voltage
Client’s Docket No.:VIT06-0147 TT^s Docket No:0608-A41005-TW/Final /Glorious_Tien , 200813443Client’s Docket No.:VIT06-0147 TT^s Docket No:0608-A41005-TW/Final /Glorious_Tien , 200813443
Vbg產生後’該控制電路208的動作由去能該比較電路2〇6 切換成致能(enable)該比較電路206。該強制電路210 |馬接 於該比較電路206之輸出端,亦由該控制電路208控制。 該比較電路206為去能狀態時,該強制電路21〇會強制該 比較電路206之輸出端電壓為一定值,以避免該比較電路 206輸出錯誤的比較結果。 第3圖為本發明之電壓源準位偵測裝置的一實施例。 電壓源準位偵測裝置300所採用的比較電路302包括一比 • 較器CMP以及一第一開關sWi。該第一開關SWl耦接於 該比較器CMP之電源端與該電壓源VDD之間,由控制電 路304所產生的一第一控制信號cSi控制。該第一開關sWi 在該控制電路304去能該比較電路302時為不導通,並且 在該控制電路304致能該比較電路302時為導通。 如第3圖所示,電壓源準位偵測裝置30〇以一第二開 關SW2實現第2圖之強制電路210。該第二開關SW2由控 制電路304所產生的一第二控制信號CS2控制。由於此實 _ 施例將該能隙參考電壓VBG輸入該比較器CMP之反相輸 入端’並且將該偵測電壓Vdet輸入該比較器CMP之非反相 輸入端,故該第二開關SW2必須在該比較電路302為去能 狀態時將其輸出端耦接至一接地端(一定電壓端),以嫁保 該比較電路302不會在該比較電路302為去能狀態時誤判 該偵測電壓Vdet高於該能隙參考電壓VBG。 第4圖為控制電路304的一實施例,其中包括一電容 C、一放電電路402、一第一反相器InVl、以及一第二反相After the Vbg is generated, the operation of the control circuit 208 is switched to enable the comparison circuit 206 by the comparison circuit 2〇6. The forcing circuit 210 | is connected to the output of the comparison circuit 206 and is also controlled by the control circuit 208. When the comparison circuit 206 is in the de-energized state, the forcing circuit 21 强制 forces the output terminal voltage of the comparison circuit 206 to a certain value to prevent the comparison circuit 206 from outputting an erroneous comparison result. FIG. 3 is an embodiment of the voltage source level detecting device of the present invention. The comparison circuit 302 employed by the voltage source level detecting device 300 includes a comparator CMP and a first switch sWi. The first switch SW1 is coupled between the power terminal of the comparator CMP and the voltage source VDD, and is controlled by a first control signal cSi generated by the control circuit 304. The first switch sWi is non-conducting when the control circuit 304 de-energizes the comparison circuit 302, and is turned on when the control circuit 304 enables the comparison circuit 302. As shown in Fig. 3, the voltage source level detecting means 30 implements the forcing circuit 210 of Fig. 2 with a second switch SW2. The second switch SW2 is controlled by a second control signal CS2 generated by the control circuit 304. Since the real-mode embodiment inputs the bandgap reference voltage VBG to the inverting input terminal of the comparator CMP and inputs the detection voltage Vdet to the non-inverting input terminal of the comparator CMP, the second switch SW2 must When the comparison circuit 302 is in the de-energized state, the output terminal is coupled to a ground terminal (a certain voltage terminal) to ensure that the comparison circuit 302 does not misjudge the detection voltage when the comparison circuit 302 is in the de-energized state. Vdet is higher than the bandgap reference voltage VBG. 4 is an embodiment of the control circuit 304, including a capacitor C, a discharge circuit 402, a first inverter InV1, and a second inversion.
Client’s Docket N〇.:VIT06-0147 TT5s Docket No:0608-A41005-TW/Final /Glorious Tien 200813443 器Inv2。如圖所示,該電容c的第一端點以及第二端點分 別耦接該電壓源VDD以及該放電電路402。該放電電路4〇2 在該冑b隙參考電壓Vbg產生後啟動’用以產生一放電電許 I放電該電容C。該第一反相器InVl之輸入端耦接該電容c 之弟一端點,以輸出上述第一控制信號CS〗控制上述第一 開關SW!。該第一控制信號〇51為高準位時,該第一開關 SWi導通,該比較電路302被致能;反之,該第一開關SWl 不導通,該比較電路302被去能。該第二反相器InV2之輸 入端搞接該第一反相器Inv!之輸出端,用以反相該第一控 制信號CSi以產生上述第二控制信號CS2控制該第二開關 SW2。该第二控制信號CS2為高準位時,該第二開關sw2 導通,反之則不導通。 在本發明中,上述放電電流I可隨著該電容C之第二 端點的電壓準位下降而減少。第5圖為控制電路3〇4的另 一實施例,所採用的放電電路502為一電流鏡,其中包括 一第一電晶體IV^以及一第二電晶體。該第一電晶體 之閘極與汲極耦接在一起。該第一與第二電晶體(Μι以 及MO之閘極電壓皆由該能隙參考電壓控制,並且具 有同樣的閘源極壓差。该弟一電晶體之汲極端耦接該 電容C之第二端點。 參閱第5圖,該電壓源VDD發生重置但尚未回升至一 準位時’該能隙參考電壓VBG尚未產生,故該放電電路502 尚未開啟,該放電電流I為零。此時,該電容c的第二端 點之電位會隨著其第一端點變化,即隨著該電壓源¥耶上Client’s Docket N〇.:VIT06-0147 TT5s Docket No:0608-A41005-TW/Final /Glorious Tien 200813443 Inv2. As shown, the first end and the second end of the capacitor c are coupled to the voltage source VDD and the discharge circuit 402, respectively. The discharge circuit 4〇2 is activated after the 胄b-gap reference voltage Vbg is generated to generate a discharge current to discharge the capacitor C. The input end of the first inverter InV1 is coupled to the one end of the capacitor c, and outputs the first control signal CS to control the first switch SW!. When the first control signal 〇51 is at a high level, the first switch SWi is turned on, and the comparison circuit 302 is enabled; otherwise, the first switch SW1 is not turned on, and the comparison circuit 302 is disabled. The input end of the second inverter InV2 is connected to the output end of the first inverter Inv! for inverting the first control signal CSi to generate the second control signal CS2 to control the second switch SW2. When the second control signal CS2 is at a high level, the second switch sw2 is turned on, and vice versa. In the present invention, the above-described discharge current I may decrease as the voltage level of the second terminal of the capacitor C decreases. Figure 5 is a further embodiment of the control circuit 〇4. The discharge circuit 502 is a current mirror comprising a first transistor IV and a second transistor. The gate of the first transistor is coupled to the drain. The first and second transistors (the gate voltages of the first and second transistors are controlled by the bandgap reference voltage, and have the same gate-source voltage difference. The first transistor of the transistor is coupled to the capacitor C. Referring to FIG. 5, when the voltage source VDD is reset but has not yet risen to a level, the gap reference voltage VBG has not yet been generated, so the discharge circuit 502 has not been turned on, and the discharge current I is zero. When the potential of the second end of the capacitor c changes with its first end point, that is, with the voltage source
Client’s Docket No·:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious Tien 200813443 升。因此,該電容c之第二端點的電位經該第一與第二反 相器InVl與InV2處理後,會輸出低準位的第一控制信號 CS!以及高準位的第二控制信號cs2。參閱第3圖,藉由上 述弟一與弟一控制信號(CS!以及CS2),該控制電路304去 能該比較電路302並且強制該比較電路302所產生的旗標 Flag為接地’以避免該比較電路302輸出錯誤的判斷結果。 參閱弟5圖’該電壓源VDD回升至該準位後,該能隙 參考電壓VBG產生,該放電裝置5〇2開啟並且產生一放電 電流I放電該電容〇第6圖為該放電電流ί與該第二電晶 體Μ2之 >及源極壓差vDS_M2之關係圖。如第6圖所示,該 放電電流I剛產生時,該電容C之第二端點的電位(即該第 二電晶體%之汲源極壓差vDSJV12)為v〇,該放電電流1:=10。 該電容c之第二端點的電位(Vds—M2)在放電過程中逐漸下 降’如第6圖所示,該放電電流I亦隨之逐漸降低,最後 兩者皆降至零。上述放電程序會令該電容C之第二端點電 位經該第一與第二反相器1!!¥1與InV2處理後,輸出高準位 的第一控制信號CS:、及低準位的第二控制信號CS2。因 此,該比較電路302被致能,並且該比較電路302之輪出 端不再被強制接地。該比較電路302得以開始正常運作。 弟7圖為控制電路3 04的另一實施例’所採用的放電 電路702為一 N型金氧半電晶體Mn,其閘極耦接該能隙 參考電壓VBG、其汲極耦接該電容C之第二端點、並且其 源極接地。由上述實施例可知,本發明之放電電路在該電 容C之第二端點的電位降至零後即停止提供該放電.電流Client’s Docket No·: VIT06-0147 TT^ Docket No: 0608-A41005-TW/Final /Glorious Tien 200813443 l. Therefore, after the potential of the second end of the capacitor c is processed by the first and second inverters InV1 and InV2, the first control signal CS! of the low level and the second control signal cs2 of the high level are output. . Referring to FIG. 3, by the above-mentioned control signals (CS! and CS2), the control circuit 304 can disable the comparison circuit 302 and force the flag Flag generated by the comparison circuit 302 to be grounded to avoid the The comparison circuit 302 outputs an erroneous judgment result. Referring to Figure 5, after the voltage source VDD rises to the level, the bandgap reference voltage VBG is generated, the discharge device 5〇2 is turned on and a discharge current is generated, and the capacitor is discharged. FIG. 6 is the discharge current ί and A diagram of the relationship between the second transistor Μ2 and the source voltage difference vDS_M2. As shown in FIG. 6, when the discharge current I is generated, the potential of the second end of the capacitor C (ie, the source-to-source voltage difference vDSJV12 of the second transistor %) is v〇, and the discharge current is 1: =10. The potential of the second terminal of the capacitor c (Vds - M2) gradually decreases during discharge. As shown in Fig. 6, the discharge current I also gradually decreases, and finally both fall to zero. The discharging process causes the second terminal potential of the capacitor C to be processed by the first and second inverters 1!! ¥1 and InV2, and outputs the first control signal CS: and the low level of the high level. The second control signal CS2. Therefore, the comparison circuit 302 is enabled and the wheel output of the comparison circuit 302 is no longer forced to ground. The comparison circuit 302 is ready for normal operation. The discharge circuit 702 used in another embodiment of the control circuit 304 is an N-type MOS transistor Mn, the gate of which is coupled to the bandgap reference voltage VBG, and the drain of the circuit is coupled to the capacitor. The second end of C and its source is grounded. It can be seen from the above embodiment that the discharge circuit of the present invention stops supplying the discharge after the potential of the second terminal of the capacitor C falls to zero.
Client’s Docket N〇.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious Tien 200813443 i,故本發明不需要耗費大量能量。 第8圖為本發明的另一實施例,其中所採用的電壓源 刀壓态802乃由串聯於該電壓源vDD與一接地端之間的複 數個電阻(本貫施例為Ri與D所組成。本發明採用單純電 阻分壓,使用者可輕易掌握該偵測電壓vdet與該電壓源Vdd 的關係。反觀第1圖之傳統電壓源準位偵測裝置,該 偵測電壓產生電路104之電晶體M3之電阻值R〇n會隨著製 程變化,不易掌握,容易造成使用者困擾。 第9圖為本發明的另一實施例,其中更包括一切換裝 置902,耦接於該電壓源分壓器904與該比較電路906之 間’用以在該比較電路906為去能狀態時,將該偵測電壓 Vdet切換成一接地端以輸入該比較電路906。如圖所示,該 切換裝置902包括一第三開關SW3、以及一第四開關sW4。 該第三開關SW3在該比較電路906被致能(該第一控制信號 081為高準位)時導通,用以耦接該偵測電壓vdeti該比較 電路906。該第四開關SW4在該比較電路906被去能(該第 一控制"is號CS2為鬲準位)時導通,用以耦接該接地端至該 比較電路906。 .第10圖為本發明的另一種實施例,其中包括多組比較 電路(1002與1004)。本實施例之電壓源分壓器1〇〇6會輸 出兩組彳貞測電壓(Vdetl與Vdet2),分別輸入比較電路1〇〇2與 1004。該等比較電路1002與1〇〇4之致能與否、以及其輸 出端所輕接之強制電路之動作與否皆和本發明其他實施例 相同。藉由本實施例,使用者可由旗標Flagl與nag2判斷Client's Docket N〇.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious Tien 200813443 i, so the present invention does not require a lot of energy. Figure 8 is another embodiment of the present invention, wherein the voltage source knife state 802 is a plurality of resistors connected in series between the voltage source vDD and a ground terminal (the present embodiment is Ri and D) The invention adopts a simple resistor partial pressure, and the user can easily grasp the relationship between the detection voltage vdet and the voltage source Vdd. In contrast, the conventional voltage source level detecting device of FIG. 1 , the detection voltage generating circuit 104 The resistance value R〇n of the transistor M3 varies with the process, and is difficult to grasp, which is easy to cause trouble to the user. FIG. 9 is another embodiment of the present invention, further including a switching device 902 coupled to the voltage source. The voltage divider 904 and the comparison circuit 906 are configured to switch the detection voltage Vdet to a ground terminal to input the comparison circuit 906 when the comparison circuit 906 is in an unenergized state. As shown, the switching device The 902 includes a third switch SW3 and a fourth switch sW4. The third switch SW3 is turned on when the comparison circuit 906 is enabled (the first control signal 081 is at a high level) for coupling the detection. Voltage vdeti the comparison circuit 906. The fourth The switch SW4 is turned on when the comparison circuit 906 is disabled (the first control "is number CS2 is the 鬲 level) for coupling the ground terminal to the comparison circuit 906. Fig. 10 is another An embodiment includes a plurality of sets of comparison circuits (1002 and 1004). The voltage source voltage dividers 1〇〇6 of the present embodiment output two sets of measurement voltages (Vdetl and Vdet2), respectively input to the comparison circuit 1〇〇. 2 and 1004. The operation of the comparison circuits 1002 and 1-4, and the operation of the forcing circuit that is lightly connected to the output thereof are the same as those of other embodiments of the present invention. By this embodiment, the user Can be judged by flags Flagl and nag2
Client’s Docket N〇.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious__Tien 200813443 該電壓源VDD目前位於某一電壓範圍内。 本發明雖以較佳實施例揭露如上,然其並非用以限定 本發明的範圍,任何熟習此項技藝者,在不脫離本發明之 精神和範圍内,當可做些許的更動與潤飾,因此本發明之 保護範圍當視後附之申請專利範圍所界定者為準。Client’s Docket N〇.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious__Tien 200813443 This voltage source VDD is currently within a certain voltage range. The present invention has been described above with reference to the preferred embodiments thereof, and is not intended to limit the scope of the present invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
Clienfs Docket No.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious_Tien 200813443 【圖式簡單說明】 第1圖為一種傳統電壓源準位偵測裝置; 第2圖為本發明之電壓源準位偵測裝置的示意圖; 第3圖為本發明之電壓源準位偵测裝置的一實施例; 第4圖為控制電路304的一實施例; 第5圖為控制電路304的另一實施例; 第6圖為該放電電流I與第5圖之第二電晶體M2的汲 源極壓差Vds__M2之關係圖; 第7圖為控制電路304的另一實施例; 第8圖為本發明之電壓源準位偵測裝置的一實施例; 第9圖為本發明之電壓源準位债測裝置的一實施例; 以及 第10圖為本發明之電壓源準位偵測裝置的一實施例。 【主要元件符號說明】 100〜傳統電壓源準位偵測裝置; 102〜能隙參考電壓產生器;104〜偵測電壓產生電路; 200〜電壓源準位偵測裝置;202〜電壓源分壓器; 204〜能隙參考電壓產生器;206〜比較電路; 208〜控制電路; 210〜強制電路; 300〜電壓源準位偵測裝置;302〜比較電路; 304〜控制電路; 402〜放電電路; 502〜放電電路, 702〜放電電路, 802〜電壓源分壓器; 902〜切換電路;Clienfs Docket No.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious_Tien 200813443 [Simplified Schematic] FIG. 1 is a conventional voltage source level detecting device; FIG. 2 is a view of the present invention FIG. 3 is a schematic diagram of a voltage source level detecting device according to the present invention; FIG. 4 is an embodiment of the control circuit 304; FIG. 5 is another embodiment of the control circuit 304. An embodiment; FIG. 6 is a diagram showing the relationship between the discharge current I and the threshold voltage difference Vds__M2 of the second transistor M2 of FIG. 5; FIG. 7 is another embodiment of the control circuit 304; An embodiment of the voltage source level detecting device of the present invention; FIG. 9 is an embodiment of the voltage source level detecting device of the present invention; and FIG. 10 is a voltage source level detecting device of the present invention. An embodiment. [Main component symbol description] 100~ conventional voltage source level detecting device; 102~gap reference voltage generator; 104~ detecting voltage generating circuit; 200~voltage source level detecting device; 202~voltage source voltage dividing 204~bandgap reference voltage generator; 206~comparing circuit; 208~control circuit; 210~force circuit; 300~voltage source level detecting device; 302~comparing circuit; 304~control circuit; 402~discharging circuit 502~ discharge circuit, 702~ discharge circuit, 802~voltage source voltage divider; 902~ switching circuit;
Clienfs Docket N〇.:VIT06-0147 TT5s Docket No:0608-A41005-TW/Final /Glorious Tien 13 200813443 904〜電壓源分壓器; 906〜比較電路; 1002、1004〜比較電路; 1006〜電壓源分壓器; C〜電容; CMP〜比較器; cs!〜第一控制信號; cs2〜第二控制信號;Clienfs Docket N〇.:VIT06-0147 TT5s Docket No:0608-A41005-TW/Final /Glorious Tien 13 200813443 904~voltage source voltage divider; 906~ comparison circuit; 1002,1004~ comparison circuit; 1006~voltage source C=capacitor; CMP~comparator; cs!~first control signal; cs2~second control signal;
Flag、Flagl、Flag2〜比較電路之輸出旗標; I〜放電電流; Inv^第一反相器;Flag, Flagl, Flag2~ comparison circuit output flag; I~ discharge current; Inv^ first inverter;
Inv2〜第二反相器; Mi、M2、與M3〜電晶體; # R!與R2〜電阻; Mn〜N型金氧半電晶體 SWi〜第一開關; SW2〜第二開關; SW3〜第三開關; SW4〜第四開關; VBG〜能隙參考電壓; VDD〜電壓源;Inv2 ~ second inverter; Mi, M2, and M3 ~ transistor; # R! and R2 ~ resistance; Mn ~ N type MOS semi-transistor SWi ~ first switch; SW2 ~ second switch; SW3 ~ Three switches; SW4~fourth switch; VBG~gap reference voltage; VDD~voltage source;
Vdet、Vdetl、Vdet2〜偵測電壓。Vdet, Vdetl, Vdet2 ~ detection voltage.
Clienfs Docket No.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious Tien 14Clienfs Docket No.:VIT06-0147 TT^ Docket No:0608-A41005-TW/Final /Glorious Tien 14
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CN101726649B (en) * | 2009-10-30 | 2013-04-24 | 海洋王照明科技股份有限公司 | Signal detection circuit, emergency power switching device and emergency light |
CN103516349A (en) * | 2012-06-26 | 2014-01-15 | 深圳市威尔科思技术有限公司 | High-voltage compatible input system |
US9081396B2 (en) * | 2013-03-14 | 2015-07-14 | Qualcomm Incorporated | Low power and dynamic voltage divider and monitoring circuit |
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