200810080 J05-〇643 18797twf.doc/m 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體結構，且特別是有關於一種導 體屏蔽圖案（shielding pattern)以及具有電感元件(induct〇r device)的半導體結構。 、 【先前技術】 ‘ 在積體電路中，電感元件是一種重要的元件，這些電感元 件樣式一般為圓形或方形的螺旋狀金屬線圈，而且這些電感元 件的應用範圍可以說是相當地廣泛。以高頻之應用領域來說， 其對於電感元件之品質要求較高，意即應用在此領域之電感元 件其具有較兩的品質因子Q值。上述Q值的定義如下·· Q = (〇0xL/R (1) 中ω〇為電感元件之共振角頻率 frequency) ’ R為f感元狀電阻，而L為金屬線圈之電感元 件值。由於電感元件大多很接近矽基底，因此在使用高頻元件 的南頻率之下，矽基底會變成導體而導致消耗大量的能量並使 φ 電感元件的品質降低。 所以，為解決上述問題並提升電感元件之品質與其Q值， 叙展出一種方法’疋利用導體層的屏蔽效應來阻隔基底與電感 兀件，如美國專利118 5,760,456。在這件專利中提到，因為有 -層位於電感元件與基朗的導體層，所以可排除基底電阻 (reSistance)Rsub對電感元件的影響，同時藉由從導體層上的電 場終止處(termination)到基底接地(gr_d)的低電阻路徑，來^ 效地取代Rsub。 J05-0643 18797twf.doc/m 200810080 然而，由於目前的電感元件圖案大多採用螺旋狀，所以容 易在導體層中誘發渴電流(eddy current)。隨之而來的問題就是 當導體層極為接近電感元件時，導體層中的渦電流會妨礙並抵 消螺旋狀電感元件所產生的磁場，導致螺旋狀電感元件的電感 (inductance)降低，並因而增加寄生電容咖_池 capacitance)C0X。 因此，美國專利US 5,760,456又提出另一種防止渦電流產 ^的導體酸。這轉體贿是將縣整_導體層改良為不 規則圖案或是不成迴路的梳狀圖案。 石夕其又4^展出翻用導體屏蔽圖案來阻隔電感元件與 ===美國專獅6,593,838，圖1為這篇專利所 =L件的-種導體屏蔽圖案之結構俯視圖。 是專利_93,838的導體屏蔽圖_ 疋以輻射狀的結構為主，且導妒戸&午α木且其叹什 —個交會點m Πί敝圖案100僅在圖案中央有 會有任何—條線路是封閉的迴路。 另外，在果國專利us 6,593,838中 圖案，如圖2A、2B和2C，豆為另&又層的導體屏蔽 屏蔽圖案的結構俯視圖。一、—種用於電感元件的導體 明筝恥圖2A，這種雙層的導 型的導體材料作為主幹200。然後，1=；^用一個十字 此，選擇連接在中央交會，支幹加:或者，請參照圖 支幹230。 、另一種導體材料作為輻射 5 ^005-0643 18797twf.doc/m 200810080 、不過為了更進-步提升電感元件之品質與其q值，上述 導體屏敝圖案的結構還有改良的空間。 【發明内容】 本發明的目的就是在提供—轉體屏蔽隨，可提升電感 兀件之品質與其Q值。 本發_再-目的是提供—難錢感元件的半導體結 構，具備較高的Q值。 插塞明提出—種導體屏蔽圖案，用於屏蔽—電感元件。這 種¥體屏敝圖案包括數料體層與擴散區。導體層是位於基底 基底内’其中各條導體層與各條擴散區互 相父錯配置，且這些導體層與擴散區均為開放離ee_。 發明的較佳實_所述導體屏蔽圖案，上述導體層 ”擴放區的配置方式可叹邊對邊 一 距離或者是兩兩部分重疊。 J互相間隔 的本發卿較佳實施觸料體減目案，上述導體岸 的材料包括多砂蝴，譬如··銅、金體層 全屬ΐΐί ϊ_較佳實施觸述導體 _，還包括第― $ —金料H金屬導線是位 接母條導體層；而第二全屬導綿 θ亚連 散區。且中導抑Μ則位於擴散區上並連接每個擴 為m/、山 其連的第—金屬導線所組成的圖宰均 綠區及與其相連㈣二金屬導線所組成的_ 本U再種具有電感元件料導體結構，包 氏、電感7G件、導體屏蔽圖案以及絕緣層。電感元件是位於^ 6 200810080 ⑽丄 uy-‘vj〇5-0643 18797twf.doc/m 底上，而導體屏蔽圖案則位於電感元件底下，用以屏蔽上述電 感^件，其中導體屏蔽圖案包括數條導體層與擴散區。而導體 層是位於基底上，擴散區則位於基底内，其中各條導體層與各 條擴散區互滅錯配置，且這些導體層與擴散區均為開^端口。 此外，絕緣層是位於導體屏蔽圖案與電感元件之間。 ㈣本發明的雛實施_辭導體結構吐述電感元件 包括圓形驗絲感元件或相螺旋式電感元件。 依照本發明的較佳實施例所述半導體結構，上述導體層與 擴散區的配置方式可以是邊對邊、互相_—距離或者是兩兩 部分韋疊。 依知本發明的較佳實施例所述半導體結構，上述導體層的 材料包括多晶石夕或金屬，譬如：銅、金、錄、銘、鶴等。 、依照本發明的較佳實施例所述半導體結構，還包括數條金 屬導線’分別位於導體層和擴散區上並分別連接導體層和擴散 區。其中’導體層及與其相連的金屬導線所組成的圖案均為開 放端，而擴散區及與其相連的金屬導線所組成的圖案也都是開 放端。 “、本發明因採用互相交錯配置的導體層和擴散區作為屏蔽 電感元件的導體屏蔽圖案，因此可以進一步降低矽基底對電感 ^件所造成的導磁干擾，以提高晶片效能。同時，這種導體屏 敝圖案幾乎不會產生渦電流，所以可避免電感元件的電感降 低，並且降低寄生電容。 為4本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 7 200810080 wx.x^-^005-0643 18797twf.doc/m 明如下。 【實施方式】 ^=蛛個之—較佳實施綱—種導體屏蔽圖案 的結構f視圖’圖3B是圖Μ的B-B線段之剖面示意圖。而 圖3C是圖3A的C部份放大示意圖。 300 =二2 ,3A、-3B與％，本實施例的導體屏蔽圖案 ;綠—電感70件(未纟會示）。這種_屏蔽圖案300 疋由數條互相交錯配置的導體層地與擴散區綱所構成，上 述導體層302的材料例如多晶石夕或金屬，譬如：銅、金、錄、 銘、鎢等。。導體層302是位於基底31〇上，而擴散區3〇4 ，位於基底310内，其中導體層3〇2與擴散區綱均為開放端 end)。再者，本實施例的導體屏蔽随3〇〇還可包括數條 至f導線、3%，分別位於導體層302和擴散區3〇4上並分別連 接母-條=體層302和每-條擴散區3()4，且這些金屬導線3〇6 可以是目解導體元件巾用來作為_、_姐極的導線的 第-層金屬層(又稱為“Metall，，），或是外加的一層金屬層。而 且，這些金屬導線306及其分別連接的每條導體層3〇2與擴散 區3〇4所組成的圖案同樣是開放端。在這個實施例中，導體層 3〇2與擴散區_的配置方式是互相間隔一小段距離d。 此外’明參照圖4與圖5，其分別為圖3B的兩種變形。 在圖4中’ ^體層4〇2與擴散區4〇4的較佳配置方式是邊對邊 (edge to edge)。而於圖5中，導體層5〇2與擴散區5〇4則是兩 兩部分重疊。 圖6A則疋依照本發明之另—較佳實施例的一種半導體結 8 200810080 ^j〇5-0643 18797twf.doc/m 構之=視^圖6B則是圖6A的B_B線段之剖面示意圖。 明同日寸苓照圖6A和圖6B，這個實施例的半導體結構包 括基底600、位於基底_上的電感元件61〇、導體屏蔽圖案 6^0以及！巴緣層630 ’上述電感元件61〇例如像本圖是圓形螺 旋式電感元件或是也可以是方型螺旋式電感元件。而導體屏蔽 圖案620則位於電感树⑽底下，用以屏蔽上述電感元件 610’其中導體屏蔽圖案⑽包括數條導體層622與擴散區 624。而導體層622是位於基底㈣上，擴散區伽則位於基 底600内’其中各條導體層紐與各條擴散區624互相交錯配 置’曰且導體層622與擴散區624均為開放端。此外，絕緣層 630是位於導體屏蔽圖案62〇與電感元件_之間。此外，上 述導體層622與擴散區624的配置方式可以如本岐邊對邊； 抑或互相間隔一距離或兩兩部分重疊。 為證實本發明的結構確有其功效，請見圖7。圖7是本發 扣種1知導體賤職之鮮糾值的比 杈曲線圖。其中’其它兩種導體屏蔽圖案是如圖Μ但一種是 的導體屏蔽圖索、-種則是只用娜 從圖7可知’本發_最高Q值高於 ，，她確實能； 綜上所述，在本發明之導體紐_巾，因 和擴散區，因此不但可降低基底對電感元件： 成的—干擾，以提升電感元件的Q值；同時，這種導體廣 9 .J05-0643 18797twf.doc/m 200810080 敝圖案幾乎不會產生涡電流，所以可避免_ 低，並且降低寄生電容。 勹电、 雖然本發明已啸佳實施_露如上，鱗 本發明，任何熟習此技藝者，在不脫離 艮定 内，當可作些許之更動與潤飾，因此n乾園 附之申請專·_界定者鱗。把L圍當視後 【圖式簡單說明】 圖1為習知用於電感元件的一種導體 視圖。 料體屏敝圖案之結構俯 圖2A至圖2〇為習知用於電感元件的另 案之結構俯視圖。 種泠體屏敝圖 圖3A疋依照本發明之一較佳實施例的 的結構俯視圖。 種¥體屏敝圖案 圖3B是圖3A的划線段之剖面示意圖。 圖3C是圖3八的〇部份放大示意圖。 圖4與圖5分別為圖3B的兩種變形。 圖6A則是依照本發明之另一每 構之俯視圖。 戶、&列的一種半導體結 二則是圖6A的B_B線段之剖面示意圖。200810080 J05-〇643 18797twf.doc/m IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a semiconductor structure, and more particularly to a conductor shielding pattern and an inductive component (induct)半导体r device) semiconductor structure. [Prior Art] ‘Inductive components are an important component in integrated circuits. These inductive components are generally circular or square spiral metal coils, and the application range of these inductive components can be said to be quite extensive. In the field of high frequency applications, the quality of the inductive component is relatively high, meaning that the inductive component used in this field has two quality factor Q values. The above Q value is defined as follows: Q = (〇0xL/R (1) where ω〇 is the resonance angular frequency of the inductance element) ′ R is the f-inductance resistance, and L is the inductance component value of the metal coil. Since the inductive components are mostly close to the germanium substrate, the germanium substrate becomes a conductor under the south frequency using the high frequency component, resulting in a large amount of energy being consumed and the quality of the φ inductive component being degraded. Therefore, in order to solve the above problems and improve the quality of the inductive component and its Q value, a method has been developed which utilizes the shielding effect of the conductor layer to block the substrate and the inductive component, such as U.S. Patent No. 1,158,760,456. It is mentioned in this patent that since the layer is located in the conductor layer of the inductor element and the base, the influence of the substrate resistance Rsub on the inductance element can be eliminated, while terminating from the electric field on the conductor layer (termination) ) A low resistance path to the ground of the substrate (gr_d) to effectively replace Rsub. J05-0643 18797twf.doc/m 200810080 However, since the current inductor element pattern is mostly spiral, it is easy to induce an eddy current in the conductor layer. The ensuing problem is that when the conductor layer is very close to the inductor element, the eddy current in the conductor layer will hinder and cancel the magnetic field generated by the spiral inductor element, resulting in a decrease in the inductance of the spiral inductor element and thus an increase. Parasitic capacitance coffee_poolcapacance)C0X. Thus, U.S. Patent No. 5,760,456, the disclosure of which is hereby incorporated herein incorporated by reference in its entirety in the entire entire entire entire entire entire entire disclosure This transfer of bribes is a comb-like pattern that improves the county's entire conductor layer into an irregular pattern or a loop. Shi Xiqi also exhibited a conductor shield pattern to block the inductive component and === American lion 6,593,838. Figure 1 is a top view of the structure of the conductor shield pattern of the patent. It is the conductor shield diagram of patent _93,838 _ 疋 is mainly radial structure, and the guide 妒戸 & α 木 wood and its sigh - a meeting point m Π 敝 敝 敝 100 pattern only in the center of the pattern will have any - The line is a closed loop. Further, in the pattern of the fruit patent US 6,593,838, as shown in Figs. 2A, 2B and 2C, the bean is a top view of the structure of the conductor shield pattern of the other layer. 1. Conductor for Inductive Components Ming Zheng 2A, this double-layered conductor material serves as the backbone 200. Then, 1=;^ with a cross, choose to connect in the central rendezvous, branch plus: or, please refer to the diagram branch 230. Another kind of conductor material is used as radiation 5 ^005-0643 18797twf.doc/m 200810080, but in order to further improve the quality of the inductance element and its q value, there is room for improvement in the structure of the above-mentioned conductor screen pattern. SUMMARY OF THE INVENTION The object of the present invention is to improve the quality of an inductive component and its Q value while providing a swivel shield. The present invention is to provide a semiconductor structure of a difficult-to-feel component with a high Q value. Plug-in proposed a kind of conductor shielding pattern for shielding-inductive components. The body screen pattern includes a plurality of body layers and a diffusion region. The conductor layer is located in the base substrate, wherein each of the conductor layers and the respective diffusion regions are disposed in a wrong relationship with each other, and the conductor layers and the diffusion regions are both open from ee_. Preferably, the conductive shielding pattern of the conductor layer is disposed in a manner that the expansion region of the conductor layer is overlapped by a distance or a two-part overlap. In the case, the material of the above conductor shore includes a multi-sand butterfly, such as copper, gold body layer is ΐΐ ϊ _ _ better implementation of the conductor _, and also includes the ― $ - gold material H metal wire is a bit bust conductor The second layer is the ya ya sub-distribution zone, and the middle stagnation is located on the diffusion zone and connects each of the first-metal wires that are expanded to m/, and the mountain is connected. And connected to it (4) composed of two metal wires _ This U is further grown with an inductor component conductor structure, a package, a 7G inductor, a conductor shield pattern and an insulating layer. The inductor component is located at ^ 6 200810080 (10) 丄uy-'vj〇 5-0643 18797twf.doc/m bottom, and the conductor shielding pattern is located under the inductance element for shielding the above-mentioned inductor component, wherein the conductor shielding pattern comprises a plurality of conductor layers and a diffusion region, and the conductor layer is located on the substrate. The diffusion zone is located in the substrate, wherein The strip conductor layer and each of the diffusion regions are mutually misaligned, and the conductor layer and the diffusion region are both open ports. Further, the insulating layer is located between the conductor shielding pattern and the inductance element. (4) The implementation of the present invention The structure of the inductor element includes a circular core sensing element or a phase spiral inductor element. According to the semiconductor structure of the preferred embodiment of the invention, the conductor layer and the diffusion region may be arranged side to side and mutually _ The semiconductor structure of the preferred embodiment of the present invention, wherein the material of the conductor layer comprises polycrystalline or metallic, such as copper, gold, ruthenium, migratory, crane, etc. According to a preferred embodiment of the present invention, the semiconductor structure further includes a plurality of metal wires 'on the conductor layer and the diffusion region, respectively, and respectively connecting the conductor layer and the diffusion region, wherein the conductor layer and the metal wires connected thereto are composed of The patterns are all open ends, and the pattern formed by the diffusion region and the metal wires connected thereto is also an open end. "The present invention adopts a conductor layer which is alternately arranged. And the diffusion region serves as a conductor shielding pattern for shielding the inductance component, so that the magnetic interference caused by the germanium substrate to the inductor can be further reduced to improve the wafer performance. At the same time, such a conductor screen pattern generates almost no eddy current, so that the inductance of the inductance element can be prevented from being lowered and the parasitic capacitance can be reduced. The above and other objects, features, and advantages of the present invention will become more apparent and understood from the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Doc/m is as follows. [Embodiment] ^ = a spider - a preferred embodiment - a structure f-view of a conductor shield pattern. Fig. 3B is a schematic cross-sectional view of the line B-B of Fig. 3B. 3C is an enlarged schematic view of a portion C of FIG. 3A. 300 = two 2, 3A, -3B and %, the conductor shielding pattern of this embodiment; green-inductive 70 pieces (not shown). The _shielding pattern 300 is composed of a plurality of conductor layers and a diffusion region which are alternately arranged, and the material of the conductor layer 302 is, for example, polycrystalline or metallic, such as copper, gold, nickel, quartz, tungsten, etc. . . The conductor layer 302 is located on the substrate 31, and the diffusion region 3〇4 is located in the substrate 310, wherein the conductor layer 3〇2 and the diffusion region are open ends end). Furthermore, the conductor shield of the present embodiment may further include a plurality of to f wires, 3%, which are respectively located on the conductor layer 302 and the diffusion region 3〇4 and are respectively connected to the parent strip = body layer 302 and each strip. Diffusion zone 3 () 4, and these metal wires 3 〇 6 may be the first layer metal layer (also referred to as "Metall,") used as a conductor of the conductor element to be used as a _, _ sister pole, or a layer of metal. Moreover, the metal wires 306 and the respective patterns of the conductor layers 3〇2 and the diffusion regions 3〇4 connected thereto are also open ends. In this embodiment, the conductor layers 3〇2 and The arrangement of the diffusion regions _ is spaced apart from each other by a small distance d. Further, referring to Fig. 4 and Fig. 5, respectively, two variants of Fig. 3B are shown. In Fig. 4, the '^ body layer 4〇2 and the diffusion region 4〇4 The preferred configuration is edge to edge. In Fig. 5, the conductor layer 5〇2 and the diffusion region 5〇4 are overlapped in two parts. Fig. 6A is further in accordance with the present invention. A semiconductor junction of a preferred embodiment 8 200810080 ^j〇5-0643 18797twf.doc/m constituting = FIG. 6B is a schematic cross-sectional view of the line B_B of FIG. 6A. Referring to FIGS. 6A and 6B, the semiconductor structure of this embodiment includes a substrate 600, an inductive element 61 on the substrate, a conductor shield pattern 6^0, and a wrap layer 630'. The figure is a circular spiral inductor component or a square spiral inductor component. The conductor shield pattern 620 is located under the inductor tree (10) for shielding the inductor component 610'. The conductor shield pattern (10) includes several strips. The conductor layer 622 and the diffusion region 624. The conductor layer 622 is located on the substrate (4), and the diffusion region is located in the substrate 600. The conductor layers and the diffusion regions 624 are alternately arranged with each other', and the conductor layer 622 and the diffusion layer. The regions 624 are all open ends. In addition, the insulating layer 630 is located between the conductor shielding pattern 62 and the inductive element _. In addition, the conductor layer 622 and the diffusion region 624 may be arranged in the same manner as the edge of the edge; One distance or two parts overlap. In order to prove that the structure of the present invention has its effect, please refer to Fig. 7. Fig. 7 is a comparison curve of the fresh correction value of the conductor of the present invention. Its two kinds of conductor shielding patterns are as shown in the figure, but one is the conductor shielding map, and the other is only used in Figure 7. It can be seen from Figure 7 that 'this hair _ highest Q value is higher than that, she can indeed; In the conductor of the present invention, the contact zone and the diffusion zone can not only reduce the interference of the substrate to the inductive component, but also increase the Q value of the inductor component; at the same time, the conductor is wide 9. J05-0643 18797twf.doc /m 200810080 The 敝 pattern will hardly generate eddy current, so it can avoid _ low and reduce the parasitic capacitance. 勹, although the invention has been implemented, 露 如上 , , , , , , , , , , , , , , , , , , , , , In the setting, when you can make some changes and retouching, so the application of the dry garden is limited to the definition of the scale. After viewing L, [Simplified Description of the Drawings] Fig. 1 is a view of a conductor used in an inductor element. The structure of the material screen pattern is shown in Fig. 2A to Fig. 2A as a plan view of another conventional structure for an inductance element. Figure 3A is a top plan view of a structure in accordance with a preferred embodiment of the present invention. Figure 3B is a schematic cross-sectional view of the line segment of Figure 3A. Fig. 3C is an enlarged schematic view showing a portion of Fig. 3B. 4 and 5 are two variants of Fig. 3B, respectively. Figure 6A is a top plan view of another configuration in accordance with the present invention. A semiconductor junction of the household and & columns is a schematic cross-sectional view of the B_B line segment of Fig. 6A.
回疋本發明與其它兩種習知導體 值的比較曲線圖。 汗蚊圖案之頻率與Q 【主要元件符號說明】 導體屏蔽圖案 、220 ·交會點 10 200810080 05-0643 18797twf.doc/m 200 :主幹 210、230 :支幹 302、402、502、622 :導體層 3〇4、404、504、624 :擴散區 306、640 :金屬導線 310、410、510、6⑻：基底 610 :電感元件 630 :絕緣層 d :距離 11A comparison of the present invention with two other conventional conductor values is shown. Frequency of sweat pattern and Q [Description of main component symbols] Conductor shielding pattern, 220 · Meeting point 10 200810080 05-0643 18797twf.doc/m 200 : trunk 210, 230: branch 302, 402, 502, 622: conductor layer 3〇4, 404, 504, 624: diffusion regions 306, 640: metal wires 310, 410, 510, 6 (8): substrate 610: inductive element 630: insulating layer d: distance 11