TW200807612A - Semiconductor manufacturing device and method - Google Patents

Abstract

A semiconductor manufacturing device and a method thereof capable of processing semiconductor substrates having a large diameter in a state that the semiconductor substrates keep standing and are opposed to each other are disclosed. The semiconductor manufacturing device includes a reaction chamber for providing an airtight process space; a boat including a pair of susceptors as the processing device mounted to the reaction chamber; a driving device for rotating the susceptors; a heater; a loading device for inserting the heater into an inner space of the susceptors; a supply nozzle and an exhaust nozzle; and a lifting device for inserting the exhaust nozzle into the space between the holders. The semiconductor manufacturing device according to present invention can prevent the transformation of the semiconductor substrate and the contamination owing to the minute dust and maintain the uniform temperature gradient of the semiconductor substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a method of fabricating the same, and more particularly to a semiconductor capable of processing a semiconductor substrate having a large diameter while the semiconductor substrate is held upright and opposed to each other. Manufacturing apparatus and method of manufacturing the same. [Prior Art] Generally, in the epitaxial semiconductor manufacturing process, a single crystal is grown on the surface of the wafer to minimize defects on the surface of the wafer. Since epitaxial semiconductor processing can control minute defects existing in or around the surface of the wafer, such as crystalline primary particles (COP), etc.; and improve the GOI (Gate Oxide Integrity) characteristics after device fabrication, Epitaxial semiconductor processing has been actively developed. In the epitaxial layer, a helium source gas such as SiCl4, SiHCl3, SiH2Cl2 or H1H4 is supplied to a high temperature tantalum wafer through a hydrogen carrier, and a single helium is chemically vapor deposited through an H-Si-Cl based reaction (^(:15336) (1 reaction) is grown on a substrate. In this epitaxial growth method, the wafer is processed into a single wafer type in consideration of a high temperature environment which causes variations in wafer, reaction gas distribution, and film uniformity. The microstructure and growth results of the vaporized film are determined by the nucleation process and surface diffusion on the growth interfacing layer. The substrate temperature, the pressure in the reaction chamber, and the gas formation all affect it. 200807612 In particular, Chemistry The reaction characteristics and the gas used to provide the geometry are important factors in the chemical vapor deposition. For this purpose, the reaction gas is injected from the upper part of the reaction chamber and discharged to the lower portion, and the semiconductor substrate is placed in the flow. In the type (fl〇Wpattem). However, in the single-wafer type vaporization device, the basic problem is that the processing volume is limited. That is to say, in the single-wafer type vaporization apparatus, the loading step, the vaporization step, and the unloading step are sequentially performed in a pure state state, and thus the processing volume is substantially limited. Therefore, in order to produce a larger amount, it is necessary to pass - A device is used to set up a large single crystal type vaporizer. However, it is not desirable for the productivity of a single wafer type vaporizer to be reduced while ensuring its material = space and input. At the same time, 'semiconductor manufacturing requires strict cleanliness. However, in the process of placing the semiconductor in the reaction chamber to protect it, minute particles are dropped from the nozzle or the boat onto the conductor substrate, thereby contaminating the surface of the substrate. In order to overcome this problem, the development of the problem is actively developed. For a wafer type semiconductor manufacturing apparatus, for example, a paired wafer type semiconductor manufacturing apparatus is disclosed in the patent application Να2000-ΐ24135, N〇2 loss 134, and No. 2000-49080, etc. That is, in a pair of wafers. In a semiconductor manufacturing apparatus, the semiconductor plates are kept upright and opposed to each other, and then the nozzles are disposed on the surface of the substrate (the jade processing table) After that, the reaction gas is injected into the space for reinforcement (see Japanese Patent Application No. 2000-124135). 〇200807612 In this case, the advantage is that the pair of substrates are processed. Increased productivity due to rain, preventing contamination of the substrate; and laminar flow of reactive gases on the opposite substrate surface. To process the opposite semiconductor substrate, the pedestal for erecting the semiconductor substrate is mounted on the wafer boat The susceptor is mounted on the susceptor, wherein the semiconductor substrate is disposed on the jig. Further, the susceptor is supported by the support roller, and a driving pin for rotating by driving the gas is formed on the outer circumference of the susceptor (refer to Japanese Patent Application Laid-Open) 2000-124134 and Νο·200 (Μ90985). However, there are many problems due to the situation of facing a pair of semiconductor substrates. First, in the susceptor towel, it is necessary to prevent contamination, deformation, and the like of the semiconductor substrate. More specifically, the susceptor is parallel to the direction of gravity so as to hold the semiconductor substrate 100 up and opposite each other. In addition, the jig is mounted on the susceptor, wherein the semiconductor substrate is disposed on the jig. Each of the fasteners has an elastic attaching means which is elastically attached to the outer periphery of the semiconductor substrate to load the upright semiconductor substrate on the jig. In addition, since the semiconductor substrate is to be rotated during the processing, it is required to have an appropriate elastic force (see Japanese Patent Application Να2__49 Wei). However, in the case of processing for epitaxial processing higher than 100 (the partial loading by the elastic attachment I in the rc_temperature environment means that the deformation of the semiconductor substrate is caused. Therefore, it is necessary to exclude the local elastic attachment. In order to rotate the semiconductor substrate during processing, the outer 8 200807612 of the susceptor is supported by the support roller, and the susceptor is rotated by the driving pin and the driving gas supplied by the base. (See Japanese Patent Application N. 〇 For this reason, basically, a friction is generated between the support roller and the outer periphery of the susceptor. "The problem is that tiny particles may penetrate into the processing space between the opposite semiconductor substrates, thereby smudging the surface of the slab. In addition, in the low-pressure environment processing, the supply of the domain for rotating the susceptor in the reaction chamber is unreasonable. Moreover, it is necessary to control the number of revolutions of the semiconductor substrate during the epitaxial processing. However, in the conventional device, The drive unit is not directly connected to the base' so it is difficult to control the number of revolutions. On the contrary, in the case where the drive unit is directly connected to the base, there is a problem in that The driving device (motor) of the anti-feel towel is damaged in a high temperature environment, so that the susceptor cannot be rotated. Moreover, there is a problem in that it is difficult to sufficiently check the uniformity of the temperature gradient. More specifically, Temperature and reaction gas are important factors in epitaxial processing. In addition, the converter plate is opposed to each other in the flow pattern of the reaction gas flowing from the upper part of the reaction chamber to the lower part. Under this condition, the initial stage of the reaction gas injection will affect The temperature gradient is 疋5, and during the initial injection of the reaction gas, the reaction gas at room temperature allows a cooling region to be generated in the upper portion of the semiconductor substrate. Further, in the heater itself, the peripheral portion of the semiconductor substrate is lower than the semiconductor substrate in terms of temperature. That is, since the heating source of the heater interferes with the room temperature outside the boundary of the semiconductor substrate, a temperature drop occurs outside the boundary, thereby affecting the uniform temperature gradient of the 200807612 of the semiconductor substrate. Rotation does not solve the temperature difference between the center part and the surrounding part. It can be said that in the case of a temperature difference in the same circumferential area, the temperature difference can be solved by the ageing of Casting County. However, in the case of a temperature difference between different circumferential areas, the semiconductor substrate cannot be rotated. To solve the temperature difference. Therefore, in the processing of a pair of semiconductor substrates, it is necessary to solve the deviation of the temperature gradient. In addition, there is a structural problem that during the loading of the susceptor into the reaction chamber, between the heater and the susceptor Interference occurs. In the case of "with a semiconductor substrate mounted on a pedestal", in order to face the semiconductor substrate in a narrow space while rotating through the support roller, the susceptor takes the following form, that is, along the opposite surface The direction is convex and the direction along the inner side is concave (groove). ^In this case, in the conventional semiconductor manufacturing apparatus, the susceptor is placed in the reaction to the middle and the keeper, and the heater is mounted to the periphery of the susceptor. And separated from it. d, since the space between the heating surface of the heater and the semiconductor substrate is separated, it is difficult to sufficiently heat the surface of the substrate. Therefore, there is a problem in that the hand needs to be inserted into the susceptor V after the susceptor is loaded, so that the semiconductor substrate is brought close to the heating source of the heater. θ Moreover, in the conventional semiconductor manufacturing apparatus, there is another problem in that it is difficult to appropriately set the discharge nozzle. More/, coarse and a, the temperature and the reaction gas are important factors in the epitaxial processing, and the semiconductor substrate is opposed to each other in the flow pattern of the gas flowing from the upper portion of the reaction chamber to the lower portion. Here, the discharge nozzle requires a large-area suction portion since the discharge nozzle is maximally close to the space between the opposing jigs to remove the injected reaction gas. That is, the discharge nozzle is maximally close to the area between the opposing jigs in order to collect the reaction gas. Here, in the patent application Ν〇200 (Μ24135, etc., the discharge nozzle loaded with the boat is maximally sinned by the space between the semiconductor substrates. However, 'loading the large direct-controlled semiconductor substrate in the reaction chamber In the upper case, since the range of motion of the boat is large, it is not desirable to set the boat and the discharge nozzle and its peripheral devices together in terms of reliability. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to solving the problems in the prior art. In view of the above problems, an object of the present invention is to provide a semiconductor manufacturing apparatus capable of processing a semiconductor substrate having a large diameter while the semiconductor substrates are held upright and opposed to each other, and a method of manufacturing the same. It is another object of the present invention to provide an A semiconductor manufacturing apparatus for preventing deformation of a semiconductor substrate and sufficiently supporting a substrate by a resilient attaching device of a jig in a high-temperature environment, and a method of manufacturing the same. Another object of the present invention is to provide a method of preventing minute dust generated by a supporting roller from entering a semiconductor The processing space of the substrate, thereby reducing the failure rate of the substrate A semiconductor manufacturing apparatus and a method of manufacturing the same. It is still another object of the present invention to provide a semiconductor manufacturing apparatus capable of accurately controlling the number of revolutions of a susceptor and a method of manufacturing the same. 11 200807612 A further object of the present invention is to provide a capable of maintaining A semiconductor manufacturing apparatus for a gas chamber and a heat-deformation of a reaction chamber and a double-fabrication method thereof. ^ ^ ^ ^ ^ ^ ^ ^ ^ A further object of the present invention is to provide a detailed control according to external conditions. A heating zone, a semiconductor manufacturing apparatus having a uniform temperature gradient from a touch panel, and a method of manufacturing the same. It is still another object of the present invention to provide a semiconductor manufacturing apparatus capable of allowing a heater to move and sufficiently maintain the airtightness of a reaction chamber. BACKGROUND OF THE INVENTION Still another object of the present invention is to provide a semiconductor manufacturing apparatus capable of easily connecting and disassembling a heater and a method of manufacturing the same. To achieve the above objects, the present invention provides a semiconductor manufacturing apparatus 'including a reaction chamber , which is used to provide a hermetic processing space; a boat, which includes a pair of susceptors mounted on the reaction chamber for the adding device; a driving device 'for rotating the susceptor; a heater; a loading device for inserting the heater into the internal space of the susceptor; And a discharge nozzle; and a lifting H for inserting the discharge nozzle into a space between the jigs. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. As shown in Fig. 7c, the semiconductor manufacturing apparatus according to the present invention includes an anti-magic 24 which provides a hermetic processing space; a wafer boat 22 for being placed in the reaction chamber 24, which includes a pair a base 18 12 200807612 and a plurality of support rollers 20, wherein the base 18 elastically couples a pair of annular holders 10 thereon and mounts the opposite semiconductor substrate 1 therein for reaction The chamber 24 is heat treated in the direction of the back surface of the opposite semiconductor substrate 1 for rotating the susceptor 18; the driving device 26 is used for placing the boat 22 in the reaction chamber 24 'Driven in the roller 20 The driving roller 2 is turned on and the susceptor 18 is rotated; a pair of heaters 80 are disposed on the opposite side of the opposite semiconductor substrate 1' to heat-treat the semiconductor substrate 1 in the reaction chamber 24, A carrier 92 for inserting the heater 80 into the internal space of the susceptor 18 after placing the boat 22 in the reaction chamber 24, and bringing each heating surface of the heater 80 close to the opposite semiconductor substrate 1 a back surface of the crucible; a supply nozzle 76 enclosing an upper portion of the opposite semiconductor substrate 1; a discharge squeal 78 enclosing a lower portion of the opposite semiconductor substrate 1; and a lifting arrangement 90' In the case where the wafer boat 22 is loaded into/removed from the reaction chamber 24, the discharge nozzle 78 is waited at the lower portion of the opposite semiconductor substrate 1 to avoid interference with the jig 10, and then the discharge nozzle 78 is inserted into the jig 10 Between so that the lower portion of the opposite semiconductor substrate 100 is encapsulated immediately after the loading of the reaction t 24 . Each of the base 18 of the semiconductor device and each of the driving devices will be described in detail below (see Figures la to 4c). First, at each of the pedestals 18 t, the support plate 14 is attached to the back surface of the nucleus 10 and elastically attached by the elastic attaching device 12 so as to be supported together with the jig 1 通过 by the circumferential contact with the back surface of the semiconductor substrate 100 Semiconductor substrate 100. 200807612 Here, in each of the pedestals 18, an anti-fouling device is formed at the circumference of the susceptor 18 between the support roller 20 and the semiconductor substrate ship of the household, so as to prevent the outer lining of the lining chain (8) Over. Specifically, the antifouling device includes an anti-sweat ring 3 (} which protrudes from the circumference of the base 18 in the direction of the semiconductor substrate chamber with respect to the driving circumference f 28 and the branch 2G.

Moreover, the anti-fouling device _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, the air curtain portion 34 is formed in the sweat guard. Further, the driving device 26 includes a support frame 40 formed on the outer side of the reaction chamber 24, a transfer plate 44 that slides along the rail 42 formed at the support frame, and a transfer device 46 that transmits the transfer plate Moving back and forth and/or at the support frame *40, the peak motor 5Q has a drive shaft μ which is driven by the vine to rotate 20' and is formed at the transfer plate μ; and a connecting device connected to the drive shaft 48 μ. Further, another purge gas supply portion 38 is formed at the reaction chamber γ' to supply vaporized blowing gas for interfering with the back surface of the semiconductor substrate 100 from the opposite susceptor 18 toward the back surface of the scallop plate. More specifically, the 'transfer device 46 includes: a transfer motor % formed at the support _ 4 ;; a transfer % as a drive shaft coupled to the transfer motor 54; and a transfer nut 58 coupled to the transfer bolt 56 And a support rod 6G' which is coupled to the transfer nut % 61 and coupled to the transfer plate 44. The drive shaft 48 is splined to the connecting device %. Here, a guide tapered surface 62 for guiding the 14200807612 palladium key coupling is formed at the front end of the drive shaft 48. At the same time the 'drive shaft 48 passes through the reaction chamber 24. Here, in order to maintain the airtightness between the drive, the 48 and the reaction chamber 24, the reaction chamber mounting ring 64 is formed, reacting into the through hole of 24, and the seal 66 and the reaction chamber 24 for sealing the outer circumference of the drive shaft 48. Separately, and between the sealing device 66 and the reaction chamber housing 64, there is a bellows 68 for maintaining the movement of the drive shaft and sealing the outer circumference of the drive shaft 48. Further, the drive shaft 48 is made of a heat insulating material to prevent heat from being transmitted to the drive motor 50, and is spline-coupled to the rotary shaft of the drive motor 5'' through the coupler 72. Moreover, the drive shaft 48 includes a cooling device. The cooling device includes cooling water 4 and a cooling water connector 75 of a shape 1 for supplying and discharging cooling water to the cooling water passage 74 of the rotating drive shaft 48 and formed on the cooling water passage 74. At the opening. The respective elements of the heater 8A including the mounting device of the semiconductor device will be described in more detail below (see, for example, FIG. 1A, FIG. 5A, FIG. 5b, and FIG. 6a, FIG. 6b, and FIG. 〇图). First, in order to heat the opposite semiconductor substrate 100 in the direction of the back surface of each semiconductor substrate, the heater 80 has a heating surface which is disposed to accommodate the entire region of the semiconductor substrate 1A. Furthermore, the heating zone provided by the heating surface has a separate power feed and is concentric with the semiconductor substrate 1 . The heating zone includes a central portion 102 for heating the center of the semiconductor substrate 1〇〇, a peripheral portion 104 for heating the outer side of the center of the semiconductor substrate 1〇〇 and surrounding the central portion 102; a peripheral portion for use于加15 200807612 The thermal semiconductor substrate 1GG is slightly splayed with a circumference of 1 () 4, and a buffer portion 1G8 which is contacted around the outer peripheral portion for twisting the outer peripheral portion 106 so as to relieve the outer peripheral portion 1 〇 6 Interference between room temperatures. Specifically, the peripheral portion 1〇4, the outer peripheral portion 1〇6, and the buffer portion (10) are cut into two vertical sections respectively corresponding to the upper and lower portions of the semiconductor substrate 100. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ~ Supply nozzle connected to the reaction gas? The buffer portion of the opening portion of the opening portion of the 108 is the pre-heating reaction gas of the upper body. The reaction gas is supplied to the semi-conducting plate i (8) immediately after the injection of the reaction gas with the opening of the supply nozzle 76 of the reaction gas and the semiconductor substrate. The heating zone heated to 8 同 on the same day also includes a plurality of coil resistance heating wires 11 具有 having feeders and ground lines adjacent to each other. The heater 80 further includes a loading device 92 that is inserted into the back surface of the semiconductor substrate 100 mounted on the susceptor 18 after the susceptor 18 is mounted for reaction, and the heater 80 is sealed by the bellows cover 87. It is installed on the reaction chamber 24. ^ Specifically, the bellows cover 87 includes: a reaction chamber mounting ring 112 that surrounds the through hole of the reaction chamber 24 to take over 80; the heater mounting ring 114' is combined with the loading device and inserted into the semiconductor a substrate, a back surface; a bellows 86 for sealing the space between the reaction chamber ampoule ring m and the heater mounting ring 114 and allowing the wave tube % to move through the loading device 92 'guide 116' for connection and The heater (10) is disassembled and formed at the heater mounting ring 114. Here, the heater 8() is slid along the rail 166 and is coupled to the heater mounting ring 114. In addition, the heater 80 further includes a heater cover 81 for maintaining airtightness between the heating person 80 and the reaction chamber 24. The heater cover 81 is a transparent cover such as a quartz cover or the like. The outer circumference of the heater cover 81 is inserted between the heater mounting ring 114 and the heater 80 to maintain the airtightness between the heater 8 and the reaction chamber. The respective elements of the discharge nozzle of the semiconductor device including the lifting device 9A will be described in detail below (see the ia, lb, and 7a, 7b, and 7c). First, the discharge nozzle 78 separately mounted to the reaction chamber 24 includes a discharge ur 79 which passes through the reaction chamber 24 and is formed on the outer side thereof, and a bellows cover 89 for maintaining the movement of the discharge pipe 79 and causing it to be discharged Airtightness is formed between the tube 79 and the reaction chamber 24. Specifically, the bellows cover 89 of the discharge nozzle 78 includes: a reaction chamber amp + morning 124 which surrounds the outer circumference of the through hole of the reaction chamber 24 to provide a discharge nozzle % discharge pipe 79; a bracket mounting ring 13A, A coupling bracket 126 mounted to the lifting device 90 for lifting the discharge nozzle 78 and having a seal for sealing the outer circumference of the discharge tube 79; and a corrugation 88 for sealing the reaction chamber mounting ring 124 The space between the bracket mounting ring 13〇 and the discharge tube 79 is allowed to be lifted by the loading device 92. At the same time, the 'lifting device 90 includes: a support frame 132 formed on the outside of the reaction chamber 24; a lifting plate 136 that slides along the way m formed at the support frame 132; and the coupling bracket m, which is mounted to the lift The plate is sub-coupled to and coupled to a discharge nozzle 78_discharger 79, a lift motor 138, the shape f 17 200807612 is formed at the brace frame 132; the lift bolt _ is connected as a drive shaft to the lift motor 138; and the lift nut (4) It is coupled to the lifting bolt Η0 and moves up and down along the lifting bolt Μ0 and is combined with the lifting plate. Here, a support ejector chamber 120 for supporting the discharge nozzle 78 is formed in the lower portion of the reaction chamber 24. / In addition, the purge discharge for removing the purge gas * m is connected to the branch

The semiconductor fabrication method for processing the opposite half 100 according to the present invention will be described in detail below. Conductor Substrate The semiconductor fabrication method for processing a phase-conducting semi-conductor plate according to the present invention comprises the steps of: loading-oppositing a semiconductor substrate to a reaction chamber for providing a hermetic processing space; The opposite side of the pedestal of the pedestal is used to machine the opposite semiconductor base, 'the heating surface of the heater is close to the back side of the semiconductor substrate;

The lower lying discharge nozzle of the semiconductor substrate is inserted into the space between the phase forming jigs; and the opposite semiconductor substrate is processed. Here, in the loading step of the processing device, the driving shaft connected to the driving roller, the heating H moving toward the back surface of the rotating substrate, and the discharging nozzle inserted into the space between the opposing jigs respectively maintain their movements With air tightness. "" The same as %, the processing step further includes a back side vaporization interference step for supplying a purge t body to each of the back sides of the opposite -conductor substrate to interfere with vaporization of the back surface of the semiconductor substrate. In addition, the processing step further includes an antifouling step for preventing minute dust from passing along the inside of the scale 18 by the following method 18 200807612, that is, the phase of each semiconductor substrate, and at each base An air curtain portion 34 is formed between the control rollers at the circumference of each of the bases. Further, the processing step further includes a heat treatment step for heating the opposite semiconductor substrate 1 '0' in the direction of the back surface of each of the semiconductor substrates by heating the heat sink 8', wherein the heater 80 has a semiconductor substrate for accommodating the semiconductor substrate The heated surface of the entire area of 100. Here, the semiconductor-based secret heating zone includes, a central portion, which is used to heat the semiconductor substrate, and is used to heat the outer side of the center of the semiconductor substrate 1 and Surrounding the central portion 1G2; the peripheral portion should be used to heat the outer periphery of the semiconductor substrate 100 and surround the peripheral portion of the brain; and slowly, h 108 ' it surrounds the peripheral portion 1〇6 and is used to force the outer peripheral portion of the knife 106, in order to reduce the interference between the peripheral portion 1〇6 and the room temperature. v here, the peripheral portion 104, the outer peripheral portion 106, and the buffer portion 1〇8

The knives are formed into at least two cumming partitions respectively corresponding to the upper and lower portions of the semiconductor substrate 1 。. The upper portion of the buffer portion 8 at the opening of the supply nozzle 76 connected to the reaction gas preheats the reaction gas at 5 pm, and then injects the preheated gas. The upper portion of the outer peripheral portion 1〇6 corresponding to the space between the opening of the supply nozzle 76 of the reaction gas and the semiconductor substrate 1〇〇 allows heating of the injected gas, and then supplies the heated gas to the semiconductor substrate 100. 〇 As described above, the semiconductor manufacturing apparatus according to the present invention includes: reaction 19 200807612 to 24 for providing a hermetic processing space; and a wafer boat 22 including a pair of susceptors 18 as processing means mounted to the reaction; a drive unit 26 for rotating the base 18; a heater 80; a loading unit 92 for inserting the heating element 80 into the internal space of the base 18; a supply nozzle 76 and a discharge nozzle 78; and a lifting device 9〇 It is used to insert the discharge nozzle % into the space between the jigs 10. The respective elements of the semiconductor device according to the present invention will be described in more detail below. First, as shown in Figs. 1a and 1b, a reaction chamber 24 for providing a gas starting and processing space is provided. The reaction chamber 24 includes opposing semiconductor substrates 100, a pair of susceptors 18 for supporting the semiconductor substrates, and a wafer boat 22 having a susceptor 18. Here, the reaction chamber is sized to accommodate the boat 22 〇 The reaction gas flows from the upper portion toward the lower portion of the reaction chamber 24. Here, the supply nozzle 76 is formed at the upper portion of the reaction chamber, and the discharge nozzle % is formed at the lower portion of the reaction chamber 24. A heater 80 for supplying a high temperature and a driving device 26 for driving the motor 20' connected to the susceptor 18 are formed on both sides of the reaction chamber 24. The boat includes a boat cover 82' for the rear of the plug base 18 and provides a hermetic processing space. Here, the boat cover 82 is mounted on the moving track 84. The semiconductor substrate 100 is loaded on the jig 10 of the wafer boat 22 by an end effector (not shown), and then the smoothing device is loaded onto the susceptor by an end effector. 20 200807612 As shown in Figures 2a to 4c, the base including the clamp i is divided into a base 18, a clamp 10 and a support plate 14. The jig 1 is elastically attached to the base 18 by the elastic attaching device 16. The jig 10 holds the semiconductor substrate through the elastic attaching device 12 and the support plate 14. Further, an antifouling device is formed at the circumference of the base 18. More specifically, as shown in Fig. 2a, Fig. 2b, Fig. 2c, and 3a

The annular jig 1 shown in Fig. 3b is opened to the moon side of the semiconductor substrate 1A such that the peripheral end of the front side of the semiconductor substrate 100 slightly interferes with the jig 10, and the annular support plate 14 is elastically attached. The attachment 12 is elastically attached to the jig 10 such that the peripheral end of the back surface of the semiconductor substrate touches slightly interferes with the branching plate 14. Therefore, the semiconductor substrate (10) is not pressurized by the elastic attaching means. The earth is hard to face the semiconductor substrate 100 loaded. Here, the driving circumferential portion 28 is projected, and the driving circumferential portion 28 is located outside the susceptor 18 and is in contact with the supporting roller 2G. The micro-gray-length broken rib surrounds the outer circumference of the susceptor ls in the direction of reading the lightly-applied + ¥ body substrate 100. The handle roller t-touch 1Tit includes an anti-sweat ring 30'. The anti-sweat ring 30 is formed on the purge gas supply portion 36 of the work space between the branch and the semiconductor base (four) to supply the purge gas to the opposite base. Reaction chamber 24 21 200807612. In addition, the air curtain portion 34 is formed in the antifouling device. Further, another purge gas supply portion 38 is formed at the reaction chamber 24 to supply vaporized purge gas for interfering with the back surface of the semiconductor substrate 100 from the opposite susceptor 18 toward the back surface of the semiconductor substrate 100. In order to form the air curtain portion 34, a purge gas supply portion is formed at the reaction chamber 24. Here, the type of the purge gas is H2. The purge gas injected into the reaction chamber 24 is discharged through a purge discharge pipe 122 formed at the support chamber 12''. Meanwhile, when the semiconductor substrate 1 is mounted on the susceptor 18, the semiconductor substrate 1 〇〇 remains erected and opposed to each other. Here, the base 18 can be rotated by the support roller 20. As shown in Fig. 2b, any one of the support rollers 2''' includes a connecting device 52''''''''''''''''''''' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' And the drive unit 26 is transferred to perform the connection as shown in Fig. 2c, the figure and the figure. At this time, the base transposing device 26 is separated from the reaction chamber by the bellows cover 69. In the case of the introduction of an explosive blowing V-rolled body such as H2 gas, it is necessary to prevent the purge gas from flowing out of the reaction chamber. In addition, in order to provide a low pressure (vacuum) environment for processing its process and preventing it from being processed, it is necessary to seal the reaction chamber 24. More specifically, the drive unit 26 includes a support frame such as that formed on the outer side of the reaction chamber 24, and a transfer plate 44 for sliding along the lane 42 formed at the support frame 40 at 22 200807612. The drive unit 26 also includes a transfer device 46 for causing the drive shaft 48 that transmits =, '-20' to be formed at the transfer plate, 'connected to the connecting device 52 on the drive shaft 48.

1 Here, in order to penetrate the reaction chamber 24 and maintain the drive shaft and reaction 3 ^ 64 24 ^ drive ^ 4» drive shaft 48 passes through and moves, and the device 66 and reaction for sealing the outer circumference of the shaft The chambers 24 are separated. The lion seals the rotating drive shaft 48 so that the hermetic seal 66 is made of a magnetic shield. Further, a bellows 68 is formed between the reaction chamber mounting rings 64 for the movement of the boring shaft 48 and seals the outer circumference of the drive shaft 48 by the sealing means 66. Moreover, the transfer device for moving the transfer plate 44 having the above-described device includes: a transfer motor 54 formed at the support frame 4〇; a transfer screw 56' which is connected to the Lai motor % persimmon; and a transfer nut 58 ' is coupled to the transfer bolt S6 for converting the rotational motion into a linear motion and performing a reciprocating motion. Further, the branch m6 is coupled to the transfer nut 58 together with the buffer spring 61. Here, the buffer spring 61 allows the support rod 60 to be elastically coupled to the transfer nut % by the spring piece. Therefore, the support rods 6'' are coupled to the transfer plates to form a transfer means. Here, in order to reduce the connection tolerance when the drive shaft 48 is moved or to make the connection 23 200807612 compact, the transfer nut 58 is spaced apart from the support rod 60 and 61 is elastically connected rearward. That is to say, if the front end Wei Chao is connected, the cutting rod will return to this extent. At this time, the buffer spring 61 allows the support to be inferior and then moves to the gingival space to a degree and elastically supports the support rod 60.

The drive shaft 48 is splined to the coupling device 52. Here, a guide tapered surface 62 for guiding the spline coupling is formed at the front end of the drive shaft. / In the splined connection of the drive shaft 48 and the connecting device 52, during the first connection, if the grooves and projections of the drive shaft 48 and the connecting device 52 are not exactly accurate to each other, they can pass at the completion time point. It is combined with the guiding inclined surface to coincide with each other. As shown in Figure 2b, the splines are square. However, the invention is not limited to splines of this shape. Of course, the spline can be a polygonal shape or a curved shape. The air-tightness is maintained by the base drive unit 26 connected to its connecting device 52. Thus, the rotational frequency can be finely controlled according to the drive unit directly connected to each base. Here, the 'heat 1' can be transmitted to the drive shaft according to the driving condition of the susceptor 18 (for example, high-temperature machining such as epitaxial processing, at this time, since the heat is transmitted to the drive shaft, the magnetic force of the drive motor may be damaged. 'It is necessary to prevent heat transfer to the drive shaft and protect the drive shaft from thermal damage. For this reason 'between the rotating shaft 70 of the drive motor (10), the drive shaft 48 is made of a heat insulating material, and the drive shaft 48 passes through the coupler 72 flower 24 200807612 is keyed to the rotating shaft of the drive motor 50. And the 'drive shaft 48 includes a cooling device. The cooling device includes a cooling water passage 74 and an annular cooling water connector 75 for supplying cooling water The cooling water passage 74 discharged to the rotating drive shaft 48 and the drive shaft 48 are formed at the opening of the cooling water passage 74 (see FIGS. 4a, 4b, 4c). The cooling water passage 74 of the rotating drive shaft 48 has an inlet. And an outlet in which a cooling water connector 75 is formed. The cooling water connector 75 includes a sealing portion (not shown) for sealing the outer circumference of the drive shaft 48. In addition, It is connected to any connection space of the inlet and the outlet of the cooling water passage 74, so if the drive shaft rotates 'the cooling water connector 75, it can be connected to the inlet and outlet of the cooling water passage 74 to supply and discharge the cooling water. Supply to the cooling water passage The cooling water of 74 allows the heat of the drive shaft to be cooled, thereby preventing thermal damage (thermal deformation) of the drive shaft. Reference will be made to the drawings, lb, 5a, 5b and 6a, 6b, The & diagram describes the various components of the heater 80 including the loading device in more detail. As shown in the figure, each of the susceptors 18 is formed at the boat 22 so as to be associated with the support roller 2 to be rotated. In addition, the front portion of the susceptor 18 has a convex disk shape 'to face the loaded semiconductor substrate 1 接近 in the inner side of the contact line of the support roller 20. Meanwhile, the semiconductor substrate 100 is mounted on the susceptor 18, The semiconductor substrate 100 remains erected and opposed to each other. Here, the susceptor 18 can be rotated by the support roller 20 of 25 200807612, as described above. This % 'thinning 8Q is solved outside the susceptor 18. Upon completion of loading = human base The surface of the socket 18 is loaded close to the surface of the semiconductor substrate 10A. In order to allow the heating device to pass through the device 92 and ensure the reaction to the (10) property of the crucible, the heater 8G is separated from the reaction chamber 24 and passes through the corrugation officer. The cover 87 shouts the ground wire to the anti-magic 24. In general, the bellows cover 87 includes: a reaction chamber mounting ring 112 that surrounds the circumference of the through hole that reacts to 24; and the heater mounting ring is called, and The heater 80 is combined with the loading device 92. In addition, a bellows 86 is formed for sealing the space between the reaction chamber mounting ring m2 the heat exchanger mounting ring 114 and allowing the bellows 86 to move through the loading device 92. Here, the 'transfer motor for generating a driving force is formed at the support frame 94' and the pair of pulleys 95 for transmitting the driving force of the motor 93 are at the shape of the pair 94. Here, any one of the pulleys 98 is connected to the transmission: a shaft that violates 93. In addition, the other pulley 98 is coupled to one end of the transfer bolt 96, and the other transfer bolt 96 is transferred to the reaction chamber 24. The transfer nut 97 for the pitch movement (linear motion) according to the rotation of the transfer bolt % is interlocked with the transfer bolt 96 and is screwed to the transfer bolt 96. Here, the smear squeezing female s #1 finder nut 97 is integrally connected to the heater smocks 114 and the heater mounting ring m is combined with the heater 8 ,, so the heater mounting ring 114 and Heater 8〇 and transfer nut 97 _ 26 200807612 = 'From the thinned 8G, Yang can be loaded on the back side of the half body substrate 100 of the reaction chamber 24 _. At the same time, the guide rail m for connecting and disassembling the heater 80 is formed at the j-mounting ring 114. Here, the heater 8 is slid along the guide 116 and coupled to the heater mounting ring 114. In addition, the outer circumference of the heater cover 81 is inserted between the heater mounting ring 114 and the heater 80 to connect the heater cover to the heater body and to remove it from the heater body. The heater cover 81 is a transparent cover such as a quartz cover or the like. The heater cover is slidably inserted between the heater mounting ring 114 and the heater 8'' to maintain the airtightness between the heater 8'' and the reaction chamber 24. Therefore, in the case where the % pick-up device 118 for connecting the heater 8 to the heater mounting ring 114 is removed to release the connection thereof, the body of the heater 8 can be easily removed along the guide rail 116. After the heater 80 is loaded on the reaction chamber 24, the susceptor 18 is rotated for processing. Subsequently, a reaction gas is injected between the opposite semiconductor substrates 丨 (8) and discharged between the opposite semiconductor substrates 1 。. At this time, a warm environment is generated by the heater 80. In order to form a thin film on the reaction surface of the semiconductor substrate 1 , it is necessary to generate an appropriate temperature gradient on the semiconductor substrate 100. Therefore, the heater 80 has a heating surface for accommodating the entire area of the semiconductor substrate 1 to heat the opposite semiconductor substrate 100 in the direction of the back surface of the mother semiconductor substrate 1A. As described above, the heating zone includes the central portion 1, 2, the peripheral portion 104, the outer peripheral portion 106, and the buffer portion 1〇8 (see Fig. 6a, 27200807612 6b, Fig. 6c). Two-point split: Some have separate power feeds and two separate splits. - Wind Lord

> As shown in the figure, the divided portion has at least seven parts. F〇f children's chest is divided into the central part of the moving, the center part of the job = a peripheral part just around the surrounding part _ two outer peripheral seven knives 106 and two buffer parts around the outer peripheral part 106. The four figures show the 'heating surface (heating enthalpy is divided into four knives. However, the invention is not limited to this number of partitions. Accordingly, the semiconductor substrate can be finely controlled. Especially, in a partition disk is hot early In the case of a corresponding heatunit, the damaged thermal unit can be easily replaced, thereby contributing to material saving. In particular, the central portion 102 is concentric with the semiconductor substrate 100. That is, the central portion 102 and the diameter are Each of the semiconductor substrates touches a half of a circular area corresponding to the touch. The central portion is heated to heat the respective semiconductor substrates 1 at the same temperature as the conventional heater. The peripheral portion 1〇4 surrounds the central portion 1〇2 and heats the central portion 1 The outer side of the crucible 2. The peripheral portion is divided into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrate temple. More specifically, the peripheral portion 104 and the boundary from the central portion 1〇2 to the semiconductor substrate 100 The area of the adjacent inner side region corresponds to the temperature of the peripheral region of the upper portion (semicircular opening) of the semiconductor substrate 100 at the initial stage of the reaction gas injection. It may be lower than the temperature of the lower portion thereof, and the peripheral region of the upper portion of the semi-substrate 100 may be highly heated. The outer peripheral portion 1〇6 surrounds the peripheral portion 104 on the outer side of the peripheral portion. The outer peripheral portion 1 〇6 is heated to include Specifically, the outer peripheral portion 106 is divided into at least two vertical sections opposite to the upper and lower portions of the semiconductor substrate 1 。. The peripheral portion chamber includes the peripheral region of the semiconductor substrate 100 and the semiconductor substrate 1 The inner side and the outer side of the circumference of the crucible. In particular, the outer peripheral portion 1〇6 can face the temperature drop of the peripheral region of the semiconductor substrate 100. Here, the first supplied reaction gas is heated and supplied to the semiconductor. After the reaction gas of the substrate 100 is injected, the upper portion of the outer peripheral portion serves as a heating region (see Fig. 6c). That is, when the reaction gas is injected into the semiconductor substrate, the temperature of the reaction gas is prevented by the outer peripheral portion. The processing temperature of the semiconductor substrate is lower than the temperature of the first reaction region. Further, the buffer portion 1〇8 surrounds The peripheral portion 1〇6 is heated and heated to alleviate the interference between the peripheral portion 106 and the room temperature. Specifically, the buffer portion should be divided into at least two vertical sections respectively corresponding to the upper and lower portions of the semiconductor substrate. The punching portion is applied to alleviate the unevenness of the temperature gradient due to the interference between the peripheral portion chamber and the room temperature. That is, the outer peripheral portion 106 extends to the outside of the peripheral region of the semiconductor substrate. However, the portion (10) is The temperature drop of the peripheral (edge) portion of the semiconductor substrate 100 cannot be sufficiently prevented. Accordingly, the buffer portion 108 serves to alleviate the direct dryness between the peripheral portion 1〇6 and the room temperature 29 200807612. In particular, the connection to the reaction The upper portion of the buffer portion 108 of the opening of the gas supply nozzle 76 is used to advance just before the injection of the reaction gas; and is preheated (see Fig. 6c). Accordingly, the upper portion of the buffer portion 108 is a preheating region of the reaction gas before the injection of the reaction gas. The reaction gas preheated by the buffer portion 1〇8 is injected, and then it is secondarily heated at the peripheral portion 106 to be put into the semiconductor substrate 100. The heating zone according to the present invention allows a more uniform temperature gradient to be generated on the semiconductor substrate 100 against external disturbances (interference of the temperature of the reaction gas with room temperature). At the same time, the heating zone of the heater 80 also includes a plurality of coil resistive heating wires 110 adjacent to each other to be responsible for the respective segments (see Figure 6b). The indicator line shown in Figure 6b shows the feeder and ground line. In addition, the power line is connected to the rear of the heated surface. Here, the power line is electrically connected to the feeder and ground. Correspondingly, each of the sections of the heating zone is spaced apart from the resistance heating scale 110 and the coil resistance heating wire 11 is filled with the area of each respective segment, thereby t is the heated surface. Reference will be made to FIGS. 1a, 1b and 7a, 71), and 7 (FIG. 7 for a more detailed description of the components of the semiconductor device including the discharge device 90. ' ϋ As described above, each of the susceptors 18 is formed at the boat 22 so as to be in contact with the urging roller 20 to be rotated. In addition, the front portion of the susceptor 18 is in the shape of a bulge 30 200807612 so as to be on the support roller 20 The inner side of the contact line is close to the loaded conductor substrate 100. 'The reaction gas flows from the upper portion of the reaction chamber 24 to the lower portion. Here, the supply nozzle 76 is formed at the upper portion of the reaction chamber 24, and the discharge nozzle 78 is formed at the lower portion thereof (苍见弟 lb diagram). Here, the 'secure nozzle' is commensurate enough to avoid interference with the jig 1 during the loading of the wafer boat 22, so the supply nozzle % can be fixed to the reaction chamber 24. The discharge nozzle 78 is separated from the supply nozzle, and the discharge nozzles 78 are disposed. The ground discharge nozzles 78 are in a waiting state to avoid interference with the boat η before the wafer boat 22 is released and released. Discharge nozzle 78 f required part _) 峨 collection is different from Gas nozzle 76 should experience. That is to say, the discharge nozzle % is taken to a large extent near the recirculation #reaction gas between the relative tools 10. Here, since the range of motion of the boat 22 is large, it is not necessary to take the boat 22 and the discharge nozzle to listen to it. In this case, in the case where the discharge nozzle 78 is fixed to the reaction chamber 24, the discharge swell may rub against the jig in the moving path of the wafer boat 22. In addition, this friction produces a small amount of two and pollutes the processing space.提升 The lifting device 90 is formed in the discharge spray (10) so that the discharge nozzle 78 is loaded between the clamps 31 200807612 during the loading of the opposing clamps (4), and more, and during its loading. Specifically, the discharge nozzles 78 are disposed in a semicircular shape between the jigs 10 so as to surround the lower portion of the opposite semiconductor substrate. The discharge nozzle 78 is formed at the reaction chamber 24 during the support of the discharge nozzle % so that both ends of the discharge nozzle 78 are vertically separated from the jig 1〇. New, _ 倾 78 is the space of the money 1 (), separated from the circumferential boundary of each fixture 10. Φ - In addition, a support chamber 120 for supporting the discharge nozzle % is formed in the lower portion of the reaction chamber 24. The appropriate portion of the 120-drain discharge nozzle 78 is supported. Further, during the processing, the purge gas is collected by the support member 120 which is fixedly spaced apart from the reaction chamber 24. A "simultaneous" lifting device 90 is formed in the lower portion of the reaction chamber 24, and the bellows cover 89 and the discharge nozzle 78 are connected to the lifting device 9A. Specifically, a bellows cover 89 for the reaction chamber 24 for setting the discharge tube 79 includes: a reaction chamber mounting ring 124, a circumference around the through hole of the reverse = 24; and a bracket An Wei Please, it is mounted on the audible setting 90_pool 126 for the arranging nozzle 78, and/or has a seal 128 for sealing the outer circumference of the discharge pipe 79. The bellows cover 89 further includes a bellows 88 for sealing the space between the reaction chamber 124 and the bracket mounting ring 13〇 and allowing the discharge duct to be lifted by the lift garment 90. The additional 'lifting device 90 includes: A frame m, which is formed on the exterior of the counter 24, and a lifting plate 136 that slides along a track 134 formed at the support frame 132 32 200807612. Moreover, the lift U 90 includes a coupling bracket 126 that is mounted to the lift plate I36 and coupled to the discharge nozzle 5% of the discharge pipe π and the bracket mounting ring 130°, ... while the drive shaft is coupled to the lift motor 138, the lift motor (10) Formed at the support frame 132 and the lifting bolt 14 (). Here, the lift screw 140 receives the driving force from the lift motor 138 through the pulley 144.

The lifting nut 142 which is subjected to the pitch movement (linear motion) according to the rotation of the lifting bolt (10) is interlocked with the lifting screw and fixed to the lifting bolt U0 by screws. Here, the lift nut 142 is integrally connected to the lift plate 13A. Accordingly, the discharge nozzle is discharged before the semiconductor substrate 1 is loaded onto or taken out of the reaction chamber 24. 9 Maintains the support status in the lower part to maintain its support status. Here, the bellows cover 89 surrounds the outer circumference of the discharge pipe 79 and maintains its tensioned state. Further, after the semiconductor substrate 100 is loaded on the reaction chamber 24, the lift motor 138 is driven and the lift bolt 14 turns by the pulley 144, so that the lift nut 142 rises and the lift plate 136 rises along the rail 134. Thereafter, the coupling bracket 126 integrally coupled to the lifting plate 136 and the bracket women's ring 130 and the discharge nozzles % connected thereto are lifted together. Accordingly, the suction portion of the discharge nozzle is inserted between the jigs 1 and surrounds the lower portion of the outer circumference of the semiconductor substrate 100. Here, the bellows cover 89 attached to the coupling bracket 126 is compressed, 33 200807612 in order to maintain the airtightness of the discharge pipe 79 and the anti-feel 24 . The truncated R^ garment is attached to the base 18 and the heater 80 is loaded into the interior space of the base 18 to handle the processing of the semi- and anti-00. After the processing is completed, the processing is continued in the reverse order of the above processing (see Fig. 70). ...,

System = Cheng Jinyi According to the present invention, the semi-conductive half of the device is used to process the opposite semiconductor substrate. The following steps: the opposite semiconductor substrate: the reaction chamber 24' Providing a hermetic processing space; connecting the drive shaft to: a pair of the driving members 2 of the seat 18 is lightly driven to process the phase substrate 10G so that the heating surface of the heater 8G is close to the back surface of the semiconductor board 100 The discharge nozzle 78 around the lower portion of the semiconductor substrate is inserted into the space of the opposite jig 1G and the opposite semiconductor substrate 100 is processed. Here, in the loading step of the processing apparatus, the drive shaft connected to the driving roller %, the heater 80 moving toward the back surface of the semiconductor substrate, and the discharge nozzle % inserted into the space between the opposing jigs 1G are respectively passed. The corrugated official covers 69, 87 and 89 scale and move and airtight. Meanwhile, the processing step further includes a back vaporization disturbing step of interfering with the back-vaporization of the semiconductor substrate 1 (10) by supplying a purge gas to each of the back sides of the opposite semiconductor substrate; and preventing the time from being turned over by the following means The dust passes in the direction of the inside of the picked-up susceptor 18, that is, the purge gas is supplied to the outer periphery of each of the semiconductor substrates, and between the bases 34 200807612 and the support rollers 2 at the circumference of each of the susceptors 18 The air curtain portion 34 is formed. In addition, the processing step further includes a heat treatment step for heating the opposite semiconductor substrate 100 in the direction of the back surface of each semiconductor substrate by the heating state 80, wherein the heater 80 has an entire area for accommodating the semiconductor substrate 1 The heated surface. Here, the heating zone concentric with the semiconductor substrate includes a central portion 1 〇 2 ' for heating the center of the semiconductor substrate 1 ;; a peripheral portion 104 for heating the outer side of the center of the semiconductor substrate 1 ® and The central portion is moved; a peripheral portion chamber for heating the outer circumference of the semiconductor substrate 100 and surrounding the peripheral portion 1〇4; and a buffer portion 108 surrounding the outer peripheral portion 106 and for heating the peripheral portion 106' to reduce the outer circumference Part 1〇6 interference with room temperature. Here, the peripheral portion 104, the peripheral portion, and the buffer portion should be divided into at least two straightening partitions respectively corresponding to the upper and lower portions of the semiconductor substrate 100. The upper portion of the buffer portion 108 at the opening of the supply nozzle 76 connected to the reaction gas allows the reaction gas to be preheated, and then the preheated gas is injected. Further, an upper portion of the outer peripheral portion chamber corresponding to the opening of the supply nozzle of the reaction gas and the closed space of the semiconductor substrate 100 allows heating of the anti-collar body of the rider, and then supplies the heated gas to the semiconductor substrate 1 Hey. It can be seen from the above that in the semiconductor manufacturing apparatus and the manufacturing method thereof, the effect is that the board is erected and rotated, and the front and outer peripheral ends of each substrate are supported by the jig by the support. From 35 羲羲 200807612, in a high temperature environment, the substrate is prevented from being deformed by the elastic attachment means of the jig and the substrate is sufficiently supported. Further, another effect is that the antifouling device is formed at the circumference of the susceptor 18, so that it can prevent minute dust generated by the supporting roller from entering the processing space of the semiconductor substrate, thereby reducing the defective rate of the substrate. Further, another effect is that the driving device is directly connected to the susceptor, thereby precisely controlling the number of revolutions of the susceptor. Moreover, another effect is to drive the reaction chamber-domain seal by a bellows cover between the drive unit and the reaction chamber. And the driving device is provided with a cooling device to maintain the airtightness of the reaction chamber and prevent thermal deformation of the drive shaft. Further, another effect is that the heating of the heater is divided into a plurality of radial portions, so that the heater can finely control the heating region in accordance with external conditions, thereby forming a uniform temperature gradient of the semiconductor substrate. Another effect of % is that the heater and the reaction chamber are combined with the corrugated official cover interposed therebetween, and the heater is placed close to the back surface of the semiconductor substrate during the agricultural load, and the heating is allowed to fully transfer the reaction chamber of the H. Air tightness. In addition, another effect is that the heater is coupled to the heater mounting ring by the guide so that the heater can be easily attached and detached. 'And another effect is that the discharge nozzle is separated from the reaction chamber and loaded on the space between the substrates by the lifting device after loading the wafer boat, so that the discharge nozzle having a sufficient suction portion is loaded on the opposite substrate In order to ensure the reliability of the device. Although the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is understood that the invention is not limited to the disclosed embodiments and illustrations, but rather, instead, Various modifications and variations are possible within the spirit and scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more apparent from the detailed description of the appended claims Illustrative view of the appearance of the semiconductor manufacturing apparatus; FIG. 1b is an explanatory view showing the arrangement of the supply nozzle and the discharge nozzle of the semiconductor manufacturing apparatus according to the present invention; FIG. 2a is a diagram showing the base according to the present invention; An exploded perspective view of the seat; FIGS. 2b and 2(; is an explanatory view showing the base according to the present invention and a driving device connected to the base; FIG. 3a is a view showing the present invention according to the present invention An explanatory cross-sectional view of a semiconductor manufacturing apparatus including a susceptor; FIG. 3b is an enlarged cross-sectional view of an upper portion of FIG. 3a; FIGS. 4a and 4b are explanatory cross-sectional views showing a driving device of a susceptor according to the present invention; Figure 4c is an explanatory view showing a cooling device of a drive shaft according to the present invention; Ports 5a and 5b are illustrations showing the loading condition of the heater according to the present invention; Fig. 6a is a view showing the heating of the heater according to the present invention; Fig. 6b is a diagram showing the heating of the heater according to the present invention; The figure shows a heating unit 38 provided in the heater according to the present invention.

An explanatory view of a semiconductor substrate and a nozzle according to the present invention; FIG. 7a is an explanatory view showing a discharge nozzle according to the present invention; FIG. 7b is an explanatory sectional view showing a lifting device according to the present invention; 7c is an explanatory cross-sectional view showing the lifting of the discharge nozzle, the connection of the susceptor, and the insertion of the heater according to the present invention. Clamp 12 λ 16 Elastic attachment device support plate 18 Base support roller 20, drive roller boat 24 Reaction chamber drive device 28 Driving solid peripheral portion antifouling ring 34 Air curtain portion Purge gas supply portion 132 Branch frame 42, 134 Track Transfer plate 46 transfer device drive shaft 50 drive motor connection device 54, 93 transfer motor transfer bolts 58, 97 transfer nut support rod 61 buffer spring guide tapered surface 64, 112 Λ 124 reaction chamber safety 1 [Main component symbol description] 10 14 20 22 26 30 36, 38 40, 94 44 48 52 56, 96 60 62 39 200807612

66 Sealing devices 68, 86, 88 Bellows 70 Shaft 72 Coupling 74 Cooling waterway 75 Cooling water connector 76 Supply nozzle 78 Discharge nozzle 79 Discharge tube 80 Heater 81 Heater cover 82 Crystal boat cover 84 Motion track 89 Bellows cover 90 Lifting device 92 Loading device 95, 144 Pulley 100 Semiconductor substrate 102 Central portion 104 Peripheral portion 106 Peripheral portion 108 Buffer portion 110 Resistance heating wire 114 Heater mounting ring 116 Guide rail 118 Coupling device 120 Support chamber 122 Purge discharge pipe 126 Coupling bracket Rack 128 seal 130 bracket mounting ring 136 lifting plate 138 motor 140 lifting screw 142 lifting nut

Claims (1)

200807612 er. Session 10. Patent application scope: 1. A semiconductor manufacturing apparatus comprising: a reaction chamber for providing a hermetic processing space; a wafer boat capable of being placed in the reaction chamber, and comprising: For the susceptor, the pedestal elastically attaches a pair of annular jigs thereon, and mounts the cymbal-shaped cymbal conductor substrate therein, and further describes the phase-half substrate in the reaction chamber. The direction of the back side is heat-treated; and Φ a support roller for rotating the susceptor; a driving device for driving the boat after the wafer boat is placed in the reaction chamber a pair of driving rollers in the support roller and rotating the susceptor; a pair of heaters disposed at the back surface of the opposite semiconductor substrate, and performing the half-substrate in the reaction chamber a heat treatment; a garment coating device for inserting the heater into an inner space of the base after the boat is placed in the reaction chamber, and bringing the respective heating surfaces of the heating benefit into proximity The back of the opposite semiconductor substrate a supply nozzle for enclosing an upper portion of the opposite semiconductor substrate; a discharge nozzle for encapsulating a lower portion of the opposite semiconductor substrate; and & a lifting device for Before the wafer loading/unloading, the discharge nozzle is supported at a lower portion of the opposite semiconductor substrate to avoid interference with the jig, and the discharge nozzle is inserted into the jig 41 200807612 , to load the boat The lower portion of the opposing semiconductor substrate is then encapsulated. 2. The semiconductor manufacturing apparatus according to claim 1, wherein in each of the susceptors, a support plate is attached to a back surface of the jig, and the support plate is elastically attached by an elastic attaching device, The support plate supports the semiconductor substrate together by contacting the periphery of the back surface of the semiconductor substrate. 3. The semiconductor manufacturing apparatus according to claim 1, wherein an anti-fouling device is formed between the semiconductor substrates of each of the pedestals t''''''' Passing through the 'anti-fouling device including the anti-sweat ring, the anti-fouling ring is from the circumference of the base relative to the driving circumferential portion and the branching roller The direction of the semiconductor substrate is convex. [4] The semiconductor manufacturing apparatus according to claim 1, wherein the anti-fouling is formed in the wire-drawing seat between the semiconductor substrate mounted on the support and (4) the base of the base. a device 'to prevent external particles from passing in a direction of the mounted semiconductor substrate, a purge gas supply portion for supplying a purge gas to a space between the opposing pedestals is formed in the reaction chamber; and An air curtain portion is formed in the sweat guard. 5. The semiconductor manufacturing apparatus according to claim 1, wherein another reaction gas supply portion is formed at the reaction chamber from the opposite base to the semi-conducting plate. The surface supply 42 200807612 is a vaporized purge gas that interferes with the back surface of the semiconductor substrate. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the driving device comprises: a support frame formed on an outer side of the reaction raft, a transfer plate along a track formed at the support frame _ Passing lightly, the money transfer board is circling the lion and formed at the support frame; a drive motor having a drive shaft for rotating the drive report and formed at the transfer plate; and a connecting device, the connection thereof On the drive shaft. 7. The semiconductor manufacturing apparatus according to claim 6, wherein the transfer device comprises: a transfer motor formed at the support frame; and a transfer bolt as a drive shaft connected to the transfer motor; a nut 'which is coupled to the transfer bolt; and a support rod coupled to the transfer nut and coupled to the transfer plate with the buffer spring. 8. The semiconductor manufacturing apparatus of claim 6, wherein the drive shaft is spline-coupled to the connecting device, and a guide for guiding the spline coupling is formed in the drive shaft Conical surface. 9. The semiconductor manufacturing apparatus of claim 6, wherein 'in order to maintain airtightness between the drive shaft and the reaction chamber, the drive shaft passes through the reaction chamber, and a through hole in the reaction chamber Forming a reaction chamber mounting ring, a sealing device for sealing the outer circumference of the drive shaft is spaced apart from the reaction chamber, and a movement for holding the drive shaft and sealing is formed between the sealing device and the reaction chamber mounting ring The bellows of the outer circumference of the drive shaft. 43 200807612 The semiconductor manufacturing apparatus according to Item 6, wherein the moving horse and the shaft are made of a heat insulating material to prevent the scale from being transferred to the drive shaft: and is coupled to the drive motor through a coupling spline. Turning to the semiconductor manufacturing apparatus described in claim 6 of the patent, and the operating shaft includes a cooling device having a cooling cooling water connector, the colder 12. ", ', should be touched The cooling of the miscellaneous _ is secreted and formed at the opening of the cooling water passage. According to the fourth aspect of the invention, in the conductor manufacturing apparatus of the first aspect, in the first aspect, the heater is provided for accommodating the semiconductor board in order to heat the opposite semiconductor substrate in the direction of the back surface of each semiconductor substrate. a region of force σ heat region having a separate power feed line and concentric with the semiconductor substrate, the heating region comprising: a central portion for heating the center of the semiconductor substrate; It is for heating the outer side of the center of the semiconductor substrate and surrounding the central portion; a peripheral portion for heating the outer circumference of the / semiconductor substrate and surrounding the peripheral portion; and a buffer portion 'which surrounds the peripheral portion And used to heat the peripheral portion to alleviate the interference between the peripheral portion and the room temperature. The semiconductor manufacturing apparatus according to claim 12, wherein the peripheral portion, the outer peripheral portion, and the drain portion are divided into two vertical sections corresponding to the upper and lower portions of the semiconductor substrate. 44 200807612 K. The semiconductor music device of claim 1, wherein an upper portion of the opening portion of the supply nozzle of the reaction gas is used to inject the reaction gas before injecting the reaction gas The reaction gas is preheated. The semiconductor manufacturing apparatus according to claim 12, wherein an upper portion of the outer peripheral portion corresponding to a space between the opening of the supply nozzle of the reactive gas and the semiconductor 2 plate is used for After injecting the gas into the sister, I will bet on heating the reaction gas for the conductor. The fused conductor manufacturing apparatus of claim 12, wherein the heating zone of the heater further comprises a plurality of coil resistance heating wires having feeders and ground lines adjacent to each other. 17. The semiconductor manufacturing apparatus of claim 2, wherein the heater further comprises a loading device, the loading device is inserted and mounted on the base after the base is mounted to the reaction chamber. The back side of the semiconductor substrate 'and the heater is sealingly mounted to the reaction chamber by a bellows cover. The semiconductor manufacturing apparatus according to claim 17, wherein the 5H bellows cover comprises a reaction chamber mounting ring surrounding the circumference of the reaction through hole for loading the heater; a ring 'which is coupled to the loading device and inserted into the back side of the semiconductor substrate; a bellows for sealing the space between the reaction chamber mounting ring and the heater mounting ring and allowing the bellows to move through the carrying device And a guide for connecting and disassembling the heater and forming 45 200807612 P at the heater mounting ring, the heater sliding along the rail and coupled to the heater mounting ring. The semiconductor manufacturing apparatus of claim 1, wherein the discharge nozzle comprises: a discharge pipe passing through the reaction chamber and formed outside the reaction chamber; and a bellows cover for holding The movement of the discharge tube and the formation of airtightness between the discharge tube and the reaction chamber. The semiconductor manufacturing apparatus of claim 19, wherein the bellows cover of the discharge nozzle comprises a reaction chamber mounting ring surrounding a circumference of the through hole of the reaction chamber to set the discharge a discharge officer of the nozzle; a bracket mounting ring mounted to the coupling bracket of the lifting device for lifting the discharge nozzle, and having a seal for sealing the outer circumference of the discharge pipe; and a bellows sealed The reaction chamber is installed with a space between the % and the bracket mounting ring and allows the discharge tube to be lifted by the loading device. The semiconductor manufacturing apparatus according to claim 2, wherein the towel 'iron lifting device comprises: a support turn formed on the material of the reaction chamber; and a lifting plate which is held along the wire to support the frame a coupling bracket that is mounted to the lifting plate and coupled to the row, a discharge pipe of the nozzle, a lifting motor formed at the support frame, and a lifting bolt connected to the lifting motor as a drive shaft; And a lifting nut coupled to the lifting bolt and along the lifting and combined with the lifting plate. ▲Up and down 22. If you apply for a patent range! In the semiconductor manufacturing apparatus described in the above paragraph, the support chamber for supporting the discharge nozzle is formed in the lower portion of the reaction chamber. A semiconductor manufacturing apparatus according to claim 22, wherein a purge discharge pipe for removing the purge gas is connected to the support chamber. ~ 4. A semiconductor manufacturing method comprising the following steps: Loading a pair of opposite semiconductor substrates on the reaction chamber to provide a hermetic processing space; and the reaction chamber is included in the reaction chamber, comprising the steps of: connecting the drive shaft to the base a pair of driving rollers of the support roller to process the opposite semiconductor substrate; bringing the heating surface of the heater close to the back surface of the semiconductor substrate; and inserting a discharge nozzle surrounding the lower portion of the semiconductor substrate In the air between the fixtures, and After the processing device loading step, the bulk substrate. Processing the opposite semiconductor π as described in claim 24, and in the loading step of the processing device, connecting to the driving shaft of the driving spoke, toward the semiconductor The heat of the back surface movement of the substrate and the discharge heave in the space between the opposing jigs respectively maintain their motion and airtightness. 6. The method for manufacturing a semiconductor according to claim 24, wherein the 甬73⁄4:=Τ step includes a backside vaporization interference step for supplying a purge gas to the _ semi-conductive (four) money supply 47 200807612 physically interferes with vaporization of the back side of the semiconductor substrate. 27. The semiconductor manufacturing method according to claim 24, wherein the processing step comprises the bribe decoration, and the method prevents the tiny dust from being along the inner side of the opposite base. The direction passes through, that is, the purge gas is supplied to the outer circumference of each of the semiconductor substrates, and the air curtain portion is formed between the support light of each of the respective bases. The semiconductor manufacturing method according to claim 24, wherein the processing step further includes a heat treatment step of heating the pair in the direction of the back surface of each of the semiconductor substrates by the heater a semiconductor substrate having a heater having a heating surface for accommodating the entire tilting domain of the conductor substrate, the heating region of the heater being concentric with the semiconductor substrate, the heating region comprising: a central portion for Heating a center of the semiconductor substrate; a peripheral portion for heating an outer side of the towel of the turn plate and surrounding the center portion; and a peripheral portion for heating the outer portion of the semiconductor substrate and surrounding the semiconductor substrate a peripheral portion; and a buffer portion surrounding the peripheral portion and for heating the peripheral portion to reduce interference between the circumference and the room temperature, and the peripheral portion, the peripheral portion knife, and the Wei Chong portion are respectively divided The upper and lower portions of the conductor substrate are corresponding to at least two vertical sections. A semiconductor manufacturing method according to claim 28, wherein I is connected to the upper portion of the supply nozzle _ mouth portion of the anti-sounding body, allowing preheating of the reaction gas, and then injecting 48. 200807612 Preheated reaction gas. The semiconductor manufacturing method according to claim 28, wherein an upper portion of the outer peripheral portion corresponding to a space between the supply tilting opening of the reaction gas and the semiconductor substrate allows the injection gas to be performed. Heating, and then supplying the heated gas to the semiconductor substrate. 49