200807466 九、發明說明： 【發明所屬之技術領域】 本發明係關於一般的電極構造體、電容哭 之製造方法，特定而a 及笔極構造體 上丄、 将疋而s’係關於使用作為電位 材料用之電極構造# 11 态專的電極 兒位稱&體、具有該電極構造體的雷六 極構造體之製造方法。 兔备為、及電 【先前技術】 例如日本專利特開昭62_222512號 介電係數的介雷暂分姓这由 a °己载，具有高 ^丨電貝材枓，係廣泛使用為諸如 體=、發光元件等的電子材料。 u益、+導 係具有二個電極，即陽極與陰極 陽極材料係使用表面可生成 罨解电谷益的 屬（即vaivemetal)。此處所謂「閥 呂/-4閥金 ::由：化破膜覆蓋的金屬，諸如:銘，、銳、鈦、 二減i、n錄等°陰極材料則係使用諸如電解 :二“、機半導體、有機導電性物質或金屬薄膜中任一者。 用電解液的情況，陰極端子大多係使用擴 j能增加電容器的靜電電容’自習知起便有數種方法被 提累。 例t在曰本專利特開2004一259932號公報中便記載有 擴大陽極與陰極端子表Φ積的方法，其係在㈣表面上依 ，含Pb的結晶性氧化物形成均勻分佈狀態，且抑制蝕刻 枯發生表面溶解狀況，藉此便可獲得經蝕刻後擴大之表面 312XP/發明說明書(補件)/96·03/95141293 200807466 積的方法。 形=:====公報中記載有 敎-磷系複合氧化物皮絲表面上附著 再者，例如日本專利特開 供構成電容性元#1現△報中,己载有 小之物品。件用的物品，其係介電係數的溫度係數較 ，加=電日之t專/㈣平1 1-317331號公報記载有增 在具有約10°、=泊電極表面積的方法’其係包括有： 配置著基材的步驟：:約10-2托爾壓力的惰性環境内 惰性環境下於A材上-柄為對基材賦予表面構造體，而在 形成含屬的步驟H利用蒸鍍 办风3有閥金屬的介電 瑕 空，且頗難工掌性开…:： 不僅需要保持高真 業f生形成均勻厚度的介電質層。 可較容易开凝膠(sol-gel)法’相較於蒸鑛法， 早乂谷易形成含閥金屬的介雷晳爲p ^ ， 厚度的介電質屛。紗 、g，可工業性形成均勻 層，在對介電V先二照:容:凝膠法 中，將容金、、匕仃加熱而形成介電質層的步驟 將谷易發生龜裂等缺 性較弱，而出現盖法卿^ 與基材的1呂之間的密接 解決上述間二c等的問題。 號公報令所記葡夕/ ΐ 在國際公開第02/062569 造方法。該i、體上具有氧化物層的構造體之製 液調製步驟;對塗佈：,有氧化物層用塗佈液的塗佈 β衣y驟的另一基體表面施行前處 312XP/發明說明書齡)/96-03/9514^293 6 200807466 2，而獲得完成前處理基體的基體表面前處理步驟；在經 别處理過的基體上塗佈氧化物層用塗佈液，而獲得塗佈基 體的塗佈步驟；以及將塗佈基體施行煅燒，而在基體上形 成氧化物層的锻燒步驟；其中，基體表面前處理步驟係包 括有將基體表面形成具有1維或2維規則構造面的第！處 然而，即使依照該方法，仍頗難在維持所需耐電壓的情 況下獲得賴性優越且冑㈣電容的冑極構造體。 【發明内容】 (發明所欲解決之問題） 所以’本發明之目的在於解決上述問題，將提供基材的 銘材=電質層間之密接性優越、可維持所需耐電壓，且 可獲侍局靜電電容的電極構造體及其製造方法暨具有該 電極構造體的電容器。 ^ (解決問題之手段） 本發明者為解決習知技術問題，輯人鑽研結果發現， 將^含閥金屬之介電質先質物質㈣材，依特定條件施 :=二可獲得能達成上述目的之電極構造體。根據此 種發明者的發現，遂完成本發明。 ^本發明的電極構造體’係具備有：銘材；形成於該 屬的介電質層;以及形㈣材與介 电貝層之間，且含有鋁與碳的介存層。 依照本發明的電極構造財，^屬最好係從鈦、知、 铪、錯及銳所構成群、组中選擇之任一種以i。-312ΧΡ/發明說明書(補件)/%-03/95141293 7 200807466 依照本發明的電極構造體中，介電質層 物（二氧化矽）。 节化 再者’依照本發明的電極構造财，介存層最好含有結 晶化I呂的碳化物。 再者，依照本發明的電極構造體巾，介存層最好 氧化物。 q 依照本發明的電極構造體之製造方法，係包括有.將含 •有閥金屬的介電質先質物質形成於鋁材表面上的步驟；在 含有含烴物質的空間中，配置已形成有介電質先質物質之 鋁材的步驟；以及在含有含烴物質的空間中，於配置著形 成有介電質先質物質之銘材的狀態下，施行加熱的步驟。 依照本發明的電極構造體之製造方法中，在含有含烴物 $的空間中’於配置著已形成介電質先質物質之銘材的狀 態下施行加熱的步驟，最好在45(rc以上、未滿660。〇的 溫度範圍内實施。 • 再者，依照本發明的電極構造體之製造方法，在含有含 烴物質的空間中，於配置著已形成介電質先質物質之鋁材 的狀態下施行加熱步驟之後，最好更包括有將鋁材施行陽 極氧化的步驟。 依照本發明的電容器係至少具備有上述特徵中之任一 項。 (發明效果） 依照本發明，電容器等所使用的電極構造體中，基材的 銘材與介電質層間之密接性優越，並在維持所需耐電壓的 312XP/發明說明書(補件)/96-03/95141293 8 200807466 前提下，可獲得高靜電電容。 【實施方式】 (紹材） 本發明之一實施形態中，形成含有閥金屬之介電質層的 基材之鋁材，並無特別的限制，可使用諸如純鋁或鋁合金 的箔片。此種鋁材最好鋁純度根據「JISH2111」所記載 方法測量的數值在98 f量上。本發明所使用的銘材之 籲組成係含有：將鉛（Pb)、矽（Si)、鐵（Fe)、銅（Cu)km幻、 鎂（Mg)、鉻（Cr)、辞（Zn)、鈦（Ti)、釩（v)、鎵（Ga)、鎳 (Nl)及硼⑻之至少1種合金元素在必要範圍内添加的銘 合^ ;或者經限定上述不可避免雜質元素含有量的铭。銘 材厚度並無特別的限制，一般最好設定在5 # m以上且 200 // m以下的範圍内。 上述鋁材係可使用周知方法進行製造的材料。例如調製 具有上述既定組成的鋁或鋁合金之熔液，將其經鑄造而庐 鲁得的鑄塊施行適當均質化處理。然後，藉由對該缚塊施^ 熱軋與冷軋，便可獲得構成基材的鋁材。另外，在上述冷 幸L步驟途中’亦可於15(rc以上且4〇代以下的溫度範圍 内施行中間退火處理。 /再者，在形成介電質先質物質的步驟之前，亦可對鋁施 行適當前處理。 (介電質層） m使用m敲、鎮、嫣、 錫、鐵、銀、石夕、纽、鈦、铪、銘、結及铌等，特別以欽、 312XP/發明說明書(補件)/96-03/95141293 9 200807466 钽、铪、鍅或鈮為佳。 在基材的銘材表面上形成含閥金屬之介電質層的方 法，並無特別的限制，最好採取溶膠凝膠法。例如利用含 閥金屬的烷氧化物之有機化合物或金屬鹽的水解與聚縮 合’調製由含氧化物先質粒子的溶液（溶膠）經凝膠化的塗 佈液，並塗佈於鋁表面上便可。或者調製使閥金屬氧化物 在溶液中乳化而成的塗佈液，並塗佈於鋁表面上便可。塗 佈方法並無特別的限制，可適當採取諸如··旋塗法、棒塗 法、淋塗法、或浸塗法。經塗佈所形成的介電質先質物質 膜厚可依恥塗敷次數、塗佈液組成及濃度而進行控制。 、2者，若在溶液（溶膠）或塗佈液中含有碳纖維、碳粒子 或碳先質等碳成分’便可更加提升作為基材的崎與介電 質層間之密接性。 若在溶液（溶膠）或塗佈液中含切氧化物（二氧化石夕） 3的提升介電質層的耐電壓，可在未施行陽極氧化 步驟的情況下’對介電質層賦予耐電壓。 =所獲得之表面形成有介電質先 要經乾燥，然後在含有含烴物 :視而 (含有紹與碳的介存層）以仏中^了熱處理。 本發明的電極構造體将#目扯士 μ θ ^ . ’、 ^備有：形成於基材鋁材與介 电貝層之間，且含有鋁與碳的介存層。 含有鋁與碳的介存層’係將表 的銘材，在含有含煙物質的成有”電貝先貝物質 含有钮盥# Μ \ + 、 兄中^行熱處理而獲得。 3有鋁與石反的介存層 k 1^基材鋁材與介電質層間之 312χρ/發明說明書(補件)/96·〇3 〇 10 200807466 密接性，且抑制在基材鋁材與介 氧的介存層之生成，並減少基材與之:值與 因而將可提供具有高靜電電容的電極構造體。 再者’含有！績碳的介存層最好含有結 物。結晶化之師炭化物將具有更加提高密接性的：;化 再者，含有銘與碳的介存層亦可 ^的絲。 物將填補介電f層所發生的龜裂等缺二防 =的效果。但是，過度形成氧化物將導致 貝層間之電阻值增加，因而恐將導致電容降低。-電 (電極構造體之製造方法） 本發明的電極構造體之製造方法係包括有: 的介電質先質物質形成於銘材表面上的步驟；然後，在f 有含烴物質的空間内配置鋁材的步驟；以及，在含有含= 物質的空間中’於配置著鋁材的狀態下施行加熱的步驟。 人再者，在介電質先質物質上或介電質先質物質間，形成 含有諸如碳纖維、碳粒子或碳先質等碳成分的組成物層之 後’再於日含有含烴物質的空間中配置著銘材’經加熱，便 可更加提升作為基材的鋁材與介電質層間之密接性與電 極之靜電電容。 一 —在介電質先質物質上或介電質先質物質間，形成含有矽 氧化物（一氧化矽）粒子的組成物層之後，若在含烴物質的 空間中配置鋁材，經加熱，便可更加提升電極構造體的耐 電壓。 本發明電極構造體之製造方法的一實施形態中，在表面 312ΧΡ__#Μ^·_51彻3 n 200807466 二成有；丨电貝先貝物質的鋁材施行熱處理時所使用的含 =質種類並無特別的限制。含烴物f的種類係可舉例如： 正nT燒及歧等烧 ==、丁稀及丁二精煙系烴;乙块等乙 、1 ^等烴的衍生物。該等烴中，最好為甲燒、 二 ==系煙’因為在表面形成有介電質先質物 烷、乙俨及：二、的步驟中，將成為氣體狀。尤佳者為甲 说及丙貌申任-種的烴。最佳的烴為甲烧。 氣態等任造方法中’可依液態、 預備層的銘所存在I3中^貝只要存在於具介電質被膜 形成有介電質依任何方法導入於表面 烴物質係屬於氣所配置的空間中。例如當含 面开^古It 情況（甲炫、乙燒、丙炫等），於表 門‘將二丨1先質物質的鋁材施行加熱處理的密閉* 態的情況，便依在該：門"，二此外’當含烴物質係液 單獨、或與惰性氣‘：二工：就化的狀態’將含烴物質 行填充便可。或與氣氣等還原性氣體—起進 驟=二成::力7先質物質的-咖 或域下實特別的限制’可在常壓、減壓 熱溫度的期間、或升㈣整係可在經保持某-定加 某一定加孰溫/it 熱溫度的升溫或從 、又進仃降溫中之任何時間點實施均可。 1 聰發明說明書(補件)/96-咖侧 12 200807466 對表面形成有介電質先質物質的鋁材所配置之空間中 導入之含烴物質的重量比率並無特別的限制，通常係相對 於鋁箔100重量份，依碳換算值計，最好設定在〇.丨重量 份以上、且50重量份以下的範圍内，尤以〇. 5重量份以 上、且30重量份以下的範圍内為佳。 在對表面形成有介電質先質物質的鋁材施行加熱之步 驟中，加熱溫度係配合加熱對象物的鋁箔之組成等而適當 ，定便可，通常最好蚊在45代以上、且未滿 耗圍内’尤以530。(：以上、且620〇C以下的範圍内為佳。 藉由將加熱溫度設定在450Ϊ以上，便可使含鋁與碳的介 存層中，含有結晶化之鋁的碳化物。但是，本發明之製造 方法中，並非排除在未滿45CTC的溫度下對表面形成^介 電質先質物質的鋁材施行加熱，只要在至少超過3〇〇它的 溫度下對表面形成有介電質先質物質的鋁材施行加熱便 可0 •加熱時間係因加熱溫度等而異，一般設定在1小時以 上、且100小時以下的範圍内。 當加熱溫度達400t以上的情況時，最好將加熱環境中 的氧濃度設定在1.0體積％以下。若在加熱溫度達4〇〇t 以上的加熱環境中，氧濃度超過1〇體積％，則鋁材表面 的熱氧化被膜將肥大，導致鋁材表面的界面電阻增加，恐 將增加電極構造體的内部電阻值。 再者，本發明的電極構造體亦可在對含有含烴物質的空 間中，於配置著鋁材的狀態下施行加熱步驟後，再施行陽 312ΧΡ/發明說明書(補件n 200807466 極氧化步驟。藉由該步驟’便可使含有鋁與碳的介存層中 含有鋁氧化物。陽極氧化步驟並無特別的限制，例如 己二酸銨或硼酸銨等溶液中，依2V以上、且以 的電壓實施。 另外’本發明的電極構造體不僅適用於陽極材料，陰極 材料亦可適用。 = (實施例） 依照以下的實施例卜22與比較例W製造電極構造體。 (實施例1〜5、比較例1〜2 ) 將厚度30^的！呂硬質f|(JIS A1〇7〇_H18)浸潰於欽烧 氧化合物溶液中，而在雙面形成厚度〇15em的介電質先 質物質。 ' 然後，將表面形成有介電質先質物質的鋁材，依照表ι 所示環境與溫度的條件施行12小時加熱，而獲得電極構 造體。 •鈦烷氧化合物溶液的組成係設定為Ti(n-〇c4H9)4:〇. 15 莫耳、CH3COCH2COCH3: 0. 45 莫耳、C2H5OH: 18 莫耳、H20: 0. 3 莫耳。在濕度40%以下的環境下，將上述鋁材於上述鈦烷 氧化合物溶液中浸潰3秒鐘後’於空氣中，在溫度i〇(rc 下施行10分鐘加熱乾燥。重複實施上述浸潰處理與加熱 處理各3次，而形成介電質先質物質。 依實施例5所獲得電極構造體中，使用溴—甲基混合溶 液將紹材溶解並使用作為試料，利用掃描型電子顯微鏡 (SEM)從背面觀察試料。在鋁材與介電質層之間，將如圖 312XP/發明說明書(補件)/96-03/95141293 14 200807466 1所不，確認到板狀結晶化物。此外，利用χ射線電子微 才木刀析儀（ΕΡΜΑ)及X射線繞射，確認上述板狀結晶化物係 屬於碳化紹。 (實施例6〜8、比較例3〜4) 將厚度50/zm之鋁硬質箱（JIS Α1〇3〇_Η18)浸潰於氧化 鈦分散水溶液中，便於雙面上形成表2所示厚度的介 先質物質。 、 然後:將表面形成有介電質先質物質的銘材，在實施例 6〜8中係於甲烷氣體環境中，在比較例3中係於空氣中， 在比較例4中係於氬氣環境中"分別於溫度施行 12小時加熱而獲得電極構造體。 氧化鈦分散水溶液係在將硫酸鈦施行水解而所猝得之 氯氧化鈦於氧環境中施行加熱而獲得氧化欽中，添:少量 硝酸而進行調整。另外，該氧化鈦係利用X射線繞射確認 到具有銳鈦確型結晶構造。在濕度繼以下的環境下，將 上述鋁材浸潰於上述氧化鈦分散水溶液中3秒鐘後，於空 溫度1G(TC施行1G分鐘加熱乾燥。重複實施上= …貝地理與加熱處理各j〜3二欠，而形成介電質先 (實施例9〜13) ' 將厚度80㈣的紹硬質箱，浸潰於含有鈦、叙、給、錯 或銳的燒Α化合物料或轉隸卜便 σ 0·4_介電質先質物質。 办成异度 然後’將表面形成有介電質先質物質的鋁 體環境中，於沪洚^ ^ 你天氧 、恤度550 C下鈿行12小時加熱，而獲得電 31瓣麵明書(補件)/%·_5141293 15 200807466 極構造體。 鋁箔的標稱純度係99· 9質量％，組成的質量分析值係石夕 75ppm、172ppm。 實施例9所使用鈕烷氧化合物溶液的組成，係設$ 為：Ta(OC2H5)5:0.15 莫耳、CH3COCH2COCH3:0.45 莫耳、 C2H5〇H:18 莫耳、Η2〇:〇· 3 莫耳。 實施例1 0所使用鈦烷氧化合物溶液的組成，係如同實 施例1〜5所使用，設定為：Ti(n-0(：4Η9)4··〇·15莫耳、、 CH3COCH2COCH3:0.45 莫耳、C2H5〇H:18 莫耳、Η2〇··〇· 3 莫耳。 實施例11所使用鈮烷氧化合物溶液的組成，係設定 為州b(0C2H〇5:0.15 莫耳、CH3COCH2COCH3:0.45 莫耳、 C2H5〇H:18 莫耳、Η2〇:〇· 3 莫耳。 實施例12所使用鍅烷氧化合物溶液的組成，係設定 為：Zr(C4H9〇)4:〇.15 莫耳、CH3COCH2COCH3:0.45 莫耳、 C2H5〇H:18 莫耳、Η2〇:〇· 3 莫耳。 、 •實施例13所使用铪溶膠溶液係將2. 0g的HfC“溶解於 99. 5%乙醇溶液15ml中之後，再於該溶液中添加〇 51g的 HA與3.32g的60%HN〇3 ’再於溫度5(rc下施行加埶而 得。 ‘、衣 在濕度40%以下的環境下，將上述銘材於上述各燒氧化 合物溶液中浸潰3秒鐘後，於空氣中在溫度1〇〇t下施行 10分鐘加熱乾燥。重複實施上述浸潰處理與加熱處理各6 次，而形成介電質先質物質。 (實施例14〜19 ) 312XP/發明說明書(補件)/96-03/9^^293 16 200807466 將依實施例9〜11所獲得電極構造體，分別依5V及lov • 2行陽極氧化，便獲得新的電極構造體（實施例14〜16與 貝施例17 19)。對所獲得電極構造體表面利用Ep施行 分析，在介電質層的龜裂部中確認到鋁氧化物。 、陽極氧化條件係在⑽它的15質量％己二酸銨溶液中， 流通50mA/cm2的直流電流，電壓到達1〇v之後，再保持 1 〇刀麵。此外，將保持丨〇分鐘後的電流值視為漏電流。 _(實施例20〜22) 將厚度80//m的鋁硬質箔浸潰於依如下所製得二氧化 矽溶膠溶液中，便在雙面上形成厚度〇 4// m的介電質先 質物質。 然後，將表面形成有介電質先質物質的鋁材，在乙炔氣 體環扰中，於溫度550°C下施行12小時加熱，而獲得電 極構造體。 鋁箔的標稱純度係99.9質量％，組成的質量分析值係 鲁石夕：75ppm、鐵：72ppm。 二氧化石夕溶膠溶液係在使用矽烷氧化合物（Si(〇C2h5)4) 水解而所獲得之二氧化矽（Si〇2)溶膠中，添加預先調整為 孟、、工石型之欽氧化物（T i 〇2)粒子而製得。此時，實施例 20〜22中’ Ti〇2粒子與si 〇2溶膠的調配比率（重量比）係如 ^ 表5所示進行變化。 -(比較例5〜7)。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Electrode structure for materials #11 The state of the electrode is called the & body, and the manufacturing method of the Ray hexapole structure having the electrode structure. Rabbits are prepared and powered [Prior Art] For example, the dielectric constant of the Japanese Patent Special Open No. 62_222512 is temporarily sub-shared by a °, which has a high electric 贝 贝, which is widely used as a body = Electronic materials such as light-emitting elements. The u- and +-conductors have two electrodes, namely the anode and the cathode. The anode material uses a surface to generate a genus (ie vaivemetal) that decomposes electricity. Here, the so-called "valve Lu / -4 valve gold:: by: metal covered by rupture film, such as: Ming, sharp, titanium, two minus i, n recorded ° cathode materials are used such as electrolysis: two ", Any of a semiconductor, an organic conductive material, or a metal thin film. In the case of an electrolyte, the cathode terminal is often used to increase the electrostatic capacitance of the capacitor. As a result, several methods have been proposed. A method of enlarging the Φ product of the anode and the cathode terminal is described in Japanese Patent Laid-Open Publication No. 2004-259932, which is based on the surface of (4), and the crystalline oxide containing Pb is uniformly distributed and suppressed. The surface dissolution condition of the etching is performed, whereby the method of etched surface 312XP/invention specification (supplement)/96·03/95141293 200807466 can be obtained. The shape of the ruthenium-phosphorus composite oxide is disclosed on the surface of the ruthenium-phosphorus composite oxide. For example, the Japanese Patent Laid-Open No. 1 is a small-sized article. For the article, the temperature coefficient of the dielectric constant is higher than that of the method of adding a voltage of about 10° to the surface area of the berth electrode. The method includes: a step of disposing a substrate: an inert environment at a pressure of about 10-2 Torr on an A material in an inert environment - the handle is a surface structure for the substrate, and the step H is used to form a genus. The plated wind 3 has a dielectric metal hollow of the valve metal, and it is difficult to open the palm of the hand...:: It is not only necessary to maintain a high dielectric layer to form a uniform thickness of the dielectric layer. It is easier to open the sol-gel method than in the steaming method. It is easy to form a dielectric metal with a valve metal of p ^ and a thickness. Yarn, g, industrially form a uniform layer, in the dielectric V first: capacity: gel method, the process of heating the gold and yttrium to form a dielectric layer, the valley is prone to cracking, etc. The lack of sufficiency, and the close connection between the grammar and the substrate 1 Lu solves the above problem. The No. Bulletin Orders the Portuguese / / ΐ in the International Publication No. 02/062569. a liquid preparation step of the structure having an oxide layer on the body; and coating: the surface of the other substrate on which the coating layer for the oxide layer is coated is applied to the front surface of the substrate 312XP/invention specification Age)/96-03/9514^293 6 200807466 2, and obtaining a substrate surface pretreatment step of the pre-processed substrate; coating the coating layer for the oxide layer on the separately treated substrate to obtain a coated substrate a coating step; and a calcining step of calcining the coated substrate to form an oxide layer on the substrate; wherein the substrate surface pretreatment step comprises forming the surface of the substrate to have a 1- or 2-dimensional regular structural surface The first! However, even in accordance with this method, it is still difficult to obtain a drain structure having superior and 胄 (tetra) capacitance while maintaining the required withstand voltage. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) Therefore, the object of the present invention is to solve the above problems, and to provide a substrate of the name material = excellent adhesion between the electric layers, to maintain the required withstand voltage, and to be served An electrode structure of a local electrostatic capacitance and a method of manufacturing the same, and a capacitor having the electrode structure. ^ (Means for Solving the Problem) In order to solve the conventional technical problems, the inventors have found that the dielectric material (four) material containing the valve metal can be applied according to specific conditions: The electrode structure of the object. According to the findings of such inventors, the present invention has been completed. The electrode structure of the present invention is provided with: a material; a dielectric layer formed in the genus; and a dielectric layer between the material (four) and the dielectric shell, and containing aluminum and carbon. According to the electrode structure of the present invention, it is preferable that any one of the group and the group selected from the group consisting of titanium, knowing, 铪, erroneous and sharp is i. -312ΧΡ/发明发明(补件)/%-03/95141293 7 200807466 In the electrode structure according to the present invention, a dielectric layer (cerium oxide). In addition, according to the electrode structure of the present invention, the donor layer preferably contains a carbide of crystallized I. Further, according to the electrode structure body towel of the present invention, the donor layer is preferably an oxide. q The method for producing an electrode structure according to the present invention includes the step of forming a dielectric precursor containing a valve metal on the surface of the aluminum material; in a space containing a hydrocarbon-containing substance, the arrangement is formed a step of heating an aluminum material having a dielectric precursor; and a step of heating in a state in which a dielectric precursor is formed in a space containing a hydrocarbon-containing substance. In the method for producing an electrode structure according to the present invention, in the space containing the hydrocarbon-containing material, a step of performing heating in a state in which a dielectric material having a dielectric precursor is formed is disposed, preferably at 45 (rc) In the above-described method of manufacturing the electrode structure according to the present invention, in the space containing the hydrocarbon-containing substance, the aluminum in which the dielectric precursor substance has been formed is disposed. After the heating step is performed in the state of the material, it is preferable to further include a step of anodizing the aluminum material. The capacitor according to the present invention has at least one of the above features. (Effect of the Invention) According to the present invention, a capacitor or the like In the electrode structure used, the adhesion between the material of the substrate and the dielectric layer is excellent, and the 312XP/invention specification (supplement)/96-03/95141293 8 200807466, which maintains the required withstand voltage, is [Embodiment] In the embodiment of the present invention, the aluminum material of the substrate containing the dielectric layer of the valve metal is not particularly limited, and may be used, for example, pure. Or aluminum alloy foil. The aluminum material preferably has a purity of 98 f according to the method described in "JISH 2111". The composition of the material used in the present invention contains: lead (Pb),矽(Si), iron (Fe), copper (Cu), magic, magnesium (Mg), chromium (Cr), bis (Zn), titanium (Ti), vanadium (v), gallium (Ga), nickel (Nl And the addition of at least one alloying element of boron (8) to the necessary range; or the definition of the content of the above-mentioned unavoidable impurity element. The thickness of the material is not particularly limited, and is generally set at 5 # m. The above-mentioned aluminum material is a material which can be produced by a known method. For example, a molten metal of aluminum or aluminum alloy having the above-described predetermined composition is prepared, and an ingot which is cast and kneaded is prepared. The appropriate homogenization treatment is carried out, and then the aluminum material constituting the substrate can be obtained by hot rolling and cold rolling the block, and it can also be 15 (rc or more in the middle of the cold step). Intermediate annealing treatment is carried out in the temperature range below 4 。. / Further, the step of forming a dielectric precursor Before, it can also be applied to the aluminum beforehand. (Dielectric layer) m Use m-knock, town, bismuth, tin, iron, silver, stone eve, New Zealand, titanium, enamel, Ming, knot and 铌, etc.钦, 312XP / invention manual (supplement) / 96-03/95141293 9 200807466 钽, 铪, 鍅 or 铌 is preferred. The method of forming a dielectric layer containing a valve metal on the surface of the substrate material, In particular, it is preferred to employ a sol-gel method, for example, by hydrolysis and polycondensation of an organic compound or a metal salt of a valve metal-containing alkoxide, by gelation of a solution (sol) of an oxide-containing precursor particle. The coating solution can be applied to the surface of the aluminum. Alternatively, a coating liquid obtained by emulsifying a valve metal oxide in a solution may be prepared and applied to an aluminum surface. The coating method is not particularly limited, and may be, for example, a spin coating method, a bar coating method, a shower coating method, or a dip coating method. The film thickness of the dielectric precursor formed by the coating can be controlled according to the number of times of application, the composition and concentration of the coating liquid. In addition, if a carbon component such as carbon fiber, carbon particles or carbon precursor is contained in the solution (sol) or the coating liquid, the adhesion between the sacrificial layer and the dielectric layer as the substrate can be further enhanced. If the withstand voltage of the dielectric layer of the cut oxide (Calcium Oxide) 3 is contained in the solution (sol) or the coating liquid, the dielectric layer can be rendered resistant without performing the anodization step. Voltage. = The surface obtained is formed with a dielectric which is first dried and then heat treated with a hydrocarbon-containing material: (containing a carrier layer of carbon and carbon). The electrode structure of the present invention has a dielectric layer formed of a material of aluminum and carbon, which is formed between a base material aluminum material and a dielectric shell layer. The storage layer containing aluminum and carbon is obtained by heat-treating the material containing the smoked substance into the "Electric Bezoic material containing button 盥 # Μ \ + , 兄中 ^. 3 with aluminum and Shi reversed storage layer k 1^ between the aluminum substrate and the dielectric layer 312 χ ρ / invention manual (supplement) / 96 · 〇 3 〇 10 200807466 adhesion, and inhibit the substrate aluminum and oxygen The storage layer is formed, and the substrate is reduced in value: and thus an electrode structure having a high electrostatic capacitance can be provided. Further, the storage layer containing the carbon must preferably contain a precipitate. The crystallization of the charcoal will be It has the effect of further improving the adhesion: the further, the inclusion layer containing the carbon layer of the Ming and the carbon can also fill the effect of the crack caused by the dielectric f layer, etc. However, excessive formation The oxide causes an increase in the resistance value between the shell layers, which may result in a decrease in capacitance. - Electricity (Manufacturing Method of Electrode Structure) The method of manufacturing the electrode structure of the present invention includes: a dielectric precursor is formed in a step on the surface of the material; then, dispose of the aluminum in a space containing f-containing hydrocarbons And a step of performing heating in a state in which the aluminum material is disposed in a space containing the substance. Further, a dielectric precursor or a dielectric precursor is formed. After the composition layer of carbon components such as carbon fibers, carbon particles or carbon precursors is placed in the space containing hydrocarbon-containing substances in the day, the aluminum material and the dielectric material can be further improved by heating the material. The adhesion between the layers and the electrostatic capacitance of the electrode. - After forming a layer of a composition containing cerium oxide (cerium oxide) particles on a dielectric precursor or a dielectric precursor, if it is in a hydrocarbon The aluminum material is disposed in the space of the substance, and the withstand voltage of the electrode structure can be further improved by heating. In one embodiment of the method for manufacturing the electrode structure of the present invention, the surface is 312 ΧΡ __# Μ ^ · _51 3 n 2008 07466 There is no particular limitation on the type of the substance to be used in the heat treatment of the aluminum material of the samarium sulphate material. The type of the hydrocarbon-containing substance f may be, for example, a positive nT-burning or a pyrolysis ==, butadiene And Ding II fine smoke hydrocarbons; a derivative of a hydrocarbon such as B, 1 or the like. Among the hydrocarbons, it is preferably a calcination, a second == a fumes, because in the step of forming a dielectric precursor alkane, an acetamidine, and a second surface, It is a gas-like type. It is especially preferred for the hydrocarbons of the type A and the genus of the genus. The best hydrocarbon is a smoldering. In the gas-making method, the liquid crystal can be used in the form of the liquid. It exists in a space in which a dielectric film is formed with a dielectric material introduced into the surface by any method, and the hydrocarbon material is in a space where the gas is disposed. For example, when the surface contains the surface of the ancient It (A Hyun, Yi B, C, etc.), In the case of the closed door state in which the aluminum material of the second precursor is subjected to heat treatment, it is based on: the door ", and the other 'when the hydrocarbon-containing substance is liquid alone, or with inert gas': Worker: In the state of the chemicalization, the hydrocarbon-containing material can be filled. Or with a reducing gas such as gas - starting step = 20%:: force 7 precursor substance - coffee or domain under the special limit 'can be under normal pressure, decompression hot temperature period, or rise (four) whole system It can be carried out at any point in time when the temperature is raised or the temperature of the heat/it is increased. 1 Cong invention manual (supplement) / 96 - coffee side 12 200807466 There is no particular limitation on the weight ratio of the hydrocarbon-containing substance introduced into the space in which the aluminum material having the dielectric precursor is formed on the surface, and is usually relatively The amount of the aluminum foil is preferably in the range of 〇. 丨 by weight or more and 50 parts by weight or less, in terms of carbon, in particular, in the range of 5% by weight or more and 30 parts by weight or less. good. In the step of heating the aluminum material having the dielectric precursor material formed on the surface, the heating temperature is appropriately set in accordance with the composition of the aluminum foil to be heated, and the like, and usually the mosquito is preferably 45 generations or more. In the full consumption area, especially 530. (: The above range is preferably 620 〇 C or less. By setting the heating temperature to 450 Å or more, the carbide containing aluminum and carbon may contain carbides of crystallized aluminum. In the manufacturing method of the invention, it is not excluded to heat the aluminum material forming the dielectric precursor material at a temperature of less than 45 CTC, as long as the dielectric is formed on the surface at a temperature exceeding at least 3 Torr. The aluminum material of the substance can be heated. 0 • The heating time varies depending on the heating temperature, etc., and is generally set within a range of 1 hour or more and 100 hours or less. When the heating temperature is 400t or more, it is preferable to heat it. The oxygen concentration in the environment is set to 1.0% by volume or less. If the oxygen concentration exceeds 1% by volume in a heating environment with a heating temperature of 4 〇〇t or more, the thermal oxidation film on the surface of the aluminum material will be enlarged, resulting in the surface of the aluminum material. The increase in the interface resistance may increase the internal resistance of the electrode structure. Further, the electrode structure of the present invention may be subjected to a heating step in a state in which an aluminum material is disposed in a space containing a hydrocarbon-containing substance. Then, the anode 312 ΧΡ / invention manual (supplement n 200807466 polar oxidation step. By this step ', the aluminum-carbon-containing carrier layer contains aluminum oxide. The anodization step is not particularly limited, for example, The solution of ammonium adipate or ammonium borate is carried out at a voltage of 2 V or more. The electrode structure of the present invention is applicable not only to an anode material but also to a cathode material. (Example) According to the following implementation In the example 22 and the comparative example W, the electrode structure was produced. (Examples 1 to 5, Comparative Examples 1 to 2) The thickness of 30^ of the hard material f|(JIS A1〇7〇_H18) was immersed in the oxygen In the compound solution, a dielectric precursor of thickness 〇15em is formed on both sides. ' Then, an aluminum material having a dielectric precursor is formed on the surface, and the environment and temperature conditions are as shown in Table 1 for 12 hours. Heating to obtain an electrode structure. • The composition of the titanium alkoxide solution is set to Ti(n-〇c4H9)4: 〇. 15 Mo, CH3COCH2COCH3: 0. 45 Mo, C2H5OH: 18 Mo, H20: 0. 3 Moel. Under the environment of humidity below 40%, the above aluminum After being immersed in the above titanium alkoxide solution for 3 seconds, it was heated and dried in air at a temperature of 1 Torr for 10 minutes. The above-mentioned impregnation treatment and heat treatment were repeated three times to form a dielectric. In the electrode structure obtained in Example 5, the sample was dissolved and used as a sample using a bromine-methyl mixed solution, and the sample was observed from the back side by a scanning electron microscope (SEM). Between the layers, as shown in Fig. 312XP/Invention Manual (Supplement)/96-03/95141293 14 200807466 1 , plate crystallized material was confirmed. Further, it was confirmed by the X-ray electron micro-knife analyzer and X-ray diffraction that the above-mentioned plate crystallized material was carbonized. (Examples 6 to 8 and Comparative Examples 3 to 4) An aluminum hard case (JIS Α1〇3〇_Η18) having a thickness of 50/zm was immersed in a titanium oxide dispersion aqueous solution to facilitate formation of the thickness shown in Table 2 on both sides. The precursor substance. Then, a material having a dielectric precursor formed on the surface was placed in a methane gas atmosphere in Examples 6 to 8, and was air in Comparative Example 3 and argon in Comparative Example 4. In the environment, the electrode structure was obtained by heating for 12 hours at a temperature. The titanium oxide dispersion aqueous solution is obtained by subjecting titanium oxychloride obtained by hydrolyzing titanium sulfate to heat in an oxygen atmosphere to obtain an oxidized solution, and adding a small amount of nitric acid to adjust it. Further, this titanium oxide was confirmed to have an anatase-determined crystal structure by X-ray diffraction. The aluminum material was immersed in the titanium oxide dispersion aqueous solution for 3 seconds in an environment of humidity below, and then dried at 1 G for 1 G minutes at an empty temperature. Repeated implementation of the above = ... Bayography and heat treatment ~3 2 owes, and the formation of dielectric first (Examples 9 to 13) 'The thickness of 80 (four) of the hard box, impregnated with titanium, Syria, give, wrong or sharp burning compound or transfer σ 0·4_ dielectric precursor substance. In the case of an aluminum body in which the surface is formed with a dielectric precursor, in the case of Hu Wei ^ ^ your oxygen, shirt 550 C The heating was carried out for 12 hours, and the electric 31 leaf-faced book (supplement)/%·_5141293 15 200807466 polar structure was obtained. The nominal purity of the aluminum foil was 99.9% by mass, and the mass analysis value of the composition was 75 ppm and 172 ppm. The composition of the solution of the knob alkoxide compound used in Example 9 was set to: Ta(OC2H5)5: 0.15 mole, CH3COCH2COCH3: 0.45 mole, C2H5〇H: 18 mole, Η2〇: 〇·3 mole The composition of the titanium alkoxide solution used in Example 10 was as used in Examples 1 to 5, and was set as: Ti(n-0(:4) Η9)4··〇·15 mol, CH3COCH2COCH3: 0.45 Mo, C2H5〇H: 18 Mo, Η2〇···························· It is set to state b (0C2H〇5: 0.15 mole, CH3COCH2COCH3: 0.45 mole, C2H5〇H: 18 mole, Η2〇: 〇·3 mole. The composition of the decane oxide solution used in Example 12, The setting is: Zr(C4H9〇)4: 〇.15 Mohr, CH3COCH2COCH3: 0.45 Mohr, C2H5〇H: 18 Mo, Η2〇: 〇·3 Moer. • The sol solution used in Example 13 After dissolving 2.0 g of HfC in 15 ml of a 99.5% ethanol solution, add 51 g of HA and 3.32 g of 60% HN〇3' to the solution and then twist at a temperature of 5 (rc). In the environment where the humidity is 40% or less, the above-mentioned materials are immersed in each of the above oxygen-burning compound solutions for 3 seconds, and then dried in air at a temperature of 1 Torr for 10 minutes. The above impregnation treatment and heat treatment were carried out 6 times to form a dielectric precursor. (Examples 14 to 19) 312XP/Invention Manual (Supplement)/96-03/9^^293 16 20080 7466 The electrode structures obtained in Examples 9 to 11 were anodized by 5 V and lov 2 rows, respectively, to obtain new electrode structures (Examples 14 to 16 and Shells 17 19). The surface of the obtained electrode structure was analyzed by Ep, and aluminum oxide was confirmed in the crack portion of the dielectric layer. The anodizing condition is in a (15) 15% by mass ammonium adipate solution, and a direct current of 50 mA/cm2 is passed, and after the voltage reaches 1 〇v, the 〇 face is maintained. In addition, the current value after the minute is maintained as a leakage current. _ (Examples 20 to 22) An aluminum hard foil having a thickness of 80/m was immersed in a cerium oxide sol solution prepared as follows, and a dielectric having a thickness of 〇4//m was formed on both surfaces. Material. Then, an aluminum material having a dielectric precursor formed thereon was heated in an acetylene gas ring at a temperature of 550 ° C for 12 hours to obtain an electrode structure. The nominal purity of the aluminum foil was 99.9% by mass, and the mass analysis value of the composition was Lushixi: 75 ppm and iron: 72 ppm. The SiO2 sol solution is added to a cerium oxide (Si〇2) sol obtained by hydrolysis of a decane oxy-compound (Si(〇C2h5)4), and is added to a cerium oxide of a smectite type (T i 〇 2) particles are produced. At this time, the blending ratio (weight ratio) of the 'Ti〇2 particles and the si 〇2 sol in Examples 20 to 22 was changed as shown in Table 5. - (Comparative Examples 5 to 7)
將厚度80/zm鋁硬質箔施行交流蝕刻而獲得電極構造 體（比較例5)。此外，如同實施例14〜19，利用5V與10V 312XP/發明說明書(補件)/96-03/95141293 17 200807466 施行陽極氧化，而獲得新的電極構造體（比較例6與比較 例7)。 鋁箔的標稱純度係9L 9質量％，組成的質量分析值係 石夕：75ppm、鐵：72ppm。 交流蝕刻方法係依序施行如下條件的一次電解蝕刻、化 學韻刻及二次電解餞刻。 <一次電解蝕刻>An electrode structure (Comparative Example 5) was obtained by subjecting a thickness of 80/zm aluminum hard foil to alternating etching. Further, as in Examples 14 to 19, anodization was carried out by using 5V and 10V 312XP/invention specification (supplement)/96-03/95141293 17 200807466 to obtain a new electrode structure (Comparative Example 6 and Comparative Example 7). The nominal purity of the aluminum foil was 9 L 9 mass%, and the mass analysis value of the composition was Shi Xi: 75 ppm and iron: 72 ppm. The alternating current etching method sequentially performs one-time electrolytic etching, chemical rhyme, and secondary electrolytic etching under the following conditions. <One time electrolytic etching>
電解液組成:12w«鹽酸+1 wt%硫酸+10Og氯化鋁/公升 •溫度:50°C 電流波形：正弦波交流 頻率：60Hz 電流密度：200mA/cm2 時間：60秒 <化學蝕刻> 電解液組成：20wt%鹽酸+ 3wt%硫酸+ 100g氯化鋁/公升 善溫度：60°C 時間：120秒 <二次電解蝕刻>Composition of electrolyte: 12w «hydrochloric acid +1 wt% sulfuric acid + 10Og aluminum chloride / liter • Temperature: 50 ° C Current waveform: sine wave AC frequency: 60 Hz Current density: 200 mA / cm 2 Time: 60 seconds <Chemical etching > Electrolyte composition: 20wt% hydrochloric acid + 3wt% sulfuric acid + 100g aluminum chloride / liters Good temperature: 60 ° C Time: 120 seconds <Secondary electrolytic etching >
電解液組成：12wt%鹽酸+ lwt%硫酸+ 100g氯化铭/公升 溫度:30°C 電流波形：正弦波交流 頻率:60Hz 電流密度：160mA/cm2 時間：300秒 312XP/發明說明書(補件)/96-03/95141293 18 200807466 、於針對依只細例卜22與比較例1〜6所獲得電極構造體的 、靜電電容、依實施例卜13與比較例卜5所獲得電極構造 體的含銘與碳之介存層形成量、依實施例14〜19與比較例 6〜7所獲得電極構造體的漏電流、以及依實施例2〇〜22與 比較例6〜7所獲得電極構造體的耐電壓等施行評估。評^ 條件係如下所示。評估結果如表丨〜5所示。 [靜電電容] 籲各試料的靜電電容係在己二酸銨水溶液中，將測定 a又為12 0 Η ζ而進行測定。 [含銘與碳的介存層形成量] 針對介存層形成量利用銘碳化物的定量分析施行評 估。將利用使電極構造體試料總量溶解於20%氫氧化鈉水 f液中而所發生的氣體捕捉，使用具火焰離子化偵測器的 南感度氣相色層分析儀，對捕捉氣體施行定量分析，並換 异成鋁碳化物（AhC3)含有量。將鋁碳化物含有量相對於溶 修解鋁質量的質量比，視為介存層形成量評估基準而施行評 估。藉此，確認電極構造體中是否形成有含鋁與碳的介 層。 [耐電壓]Composition of electrolyte: 12wt% hydrochloric acid + lwt% sulfuric acid + 100g chlorination / liter temperature: 30 °C Current waveform: sine wave AC frequency: 60Hz Current density: 160mA/cm2 Time: 300 seconds 312XP / invention manual (supplement) /96-03/95141293 18 200807466, for the electrode structure obtained by the example 22 and the comparative examples 1 to 6, the electrostatic capacitance, the electrode structure obtained according to the example 13 and the comparative example 5 Electrode structure of the electrode structure obtained in Examples 14 to 19 and Comparative Examples 6 to 7 and electrode structures obtained in Examples 2 to 22 and Comparative Examples 6 to 7 The withstand voltage is evaluated. The evaluation criteria are as follows. The evaluation results are shown in Table 55. [Electrostatic capacitance] The electrostatic capacitance of each sample was measured in an aqueous solution of ammonium adipate, and the measurement a was again determined to be 12 0 Η 。. [Formation amount of inclusion layer containing carbon and carbon] The amount of the formation layer was evaluated by quantitative analysis using Ming carbide. The gas trapping occurs by dissolving the total amount of the electrode structure sample in 20% sodium hydroxide water, and quantifying the trapping gas using a south sensitivity gas chromatograph with a flame ionization detector Analyze and change the content of aluminum carbide (AhC3). The mass ratio of the aluminum carbide content to the mass of the solution-dissolved aluminum was evaluated as a basis for evaluating the amount of the formation layer. Thereby, it was confirmed whether or not a layer containing aluminum and carbon was formed in the electrode structure. [withstand voltage]
將在15重量％己二酸銨水溶液中流通lmA/cm2定電流5 分鐘後的電壓視為耐電壓而施行評估。另外，在該測 定中，電極構造體的反電極係使用鋁箱。 J 312XP/發明說明書(補件)/96-03/95141293 19 200807466 [表1 ] 加熱環境 加熱溫度 (°C ) 靜電電容 (β F/cm2) 介存層與紹箔之重量比（％) 實施例1 甲烷氣體 400 132 0.01 實施例2 甲烷氣體 450 528 0. 07 實施例3 曱烷氣體 500 655 0. 14 實施例4 甲烷氣體 550 688 0· 28 實施例5 甲烷氣體 600 681 0. 60 比較例1 空氣 500 25 < 0. 01 比較例2 氬氣 500 48 < 0· 01 [表2] 浸潰次數 (次） 介電質被膜 預備層厚度 (β m) 靜電電容 (β f/cm2) 介存層與鋁箔之重量比 (%) 實施例6 1 0. 19 779 0. 32 實施例7 2 0. 45 805 0.38 實施例8 3 0. 64 856 0. 35 比較例3 1 0. 20 21 < 0. 01 比較例4 1 0. 21 37 < 0· 01The voltage after circulating a constant current of LMA/cm 2 for 5 minutes in an aqueous solution of 15% by weight of ammonium adipate was regarded as a withstand voltage and evaluated. Further, in this measurement, the counter electrode of the electrode structure was an aluminum box. J 312XP/Invention Manual (Supplement)/96-03/95141293 19 200807466 [Table 1] Heating Environment Heating Temperature (°C) Electrostatic Capacitance (β F/cm2) Weight Ratio of Storage Layer to Shao Foil (%) Example 1 Methane gas 400 132 0.01 Example 2 Methane gas 450 528 0. 07 Example 3 decane gas 500 655 0. 14 Example 4 Methane gas 550 688 0· 28 Example 5 Methane gas 600 681 0. 60 Comparative example 1 Air 500 25 < 0. 01 Comparative Example 2 Argon 500 48 < 0· 01 [Table 2] Number of times of impregnation (times) Dielectric film preparation layer thickness (β m) Electrostatic capacitance (β f/cm 2 ) Weight ratio of the donor layer to the aluminum foil (%) Example 6 1 0. 19 779 0. 32 Example 7 2 0. 45 805 0.38 Example 8 3 0. 64 856 0. 35 Comparative Example 3 1 0. 20 21 < 0. 01 Comparative Example 4 1 0. 21 37 < 0· 01
[表3] 閥金屬 靜電電容 (β F/cm2) 介存層與铭箔之重量比 ⑻ 實施例9 钽 1068 0. 43 實施例10 鈦 1648 0. 31 實施例11 鈮 1404 0. 39 實施例12 锆 821 0. 35 實施例13 銓 979 0. 34 比較例5 — 590 < 0· 01 312XP/發明說明書(補件)/96-03/95141293 20 200807466 [表4] 閥金屬 5 V陽極氧化 靜電電容 (β F/cm2) 1 ον陽極氧化 靜電電容 (A F/cm2) 漏電流 (mA/cm2) 實施例14 钽 688 一 1. 50 實施例15 鈦 1252 一 1. 61 實施例16 鈮 832 一 1 85 比較例6 — 186 一 1. 90 實施例17 一 488 ? η 9 實施例18 鈦 — 613 9 Π1 實施例19 銳 — 502 2 19 比較例7 — 132 9 9Q [表5 ] 調配比率 靜電電容 Ti〇2 Si〇2 (β F/cm2) 电/全 (V) 實施例20 9 「1 1327 12 實施例21 5 5 985 27 實施例22 3 7 554 A 1 比較例6 一 一 186 0 ο 比較例7 一 一 132 一 0 > ~6~ … n工伸疋胆，4日牧 的 比較例w所獲得電極構造體之下，得知可顯 靜電電容。 丨以上所揭示實施形態與實施例均僅止於例示而已，不可 ，為㈣限於此。本發明範圍並非僅純於以上的實施形 悲與貫施例’而是由申請專刹欽m 、 T月寻利乾圍所示，舉凡與申請專利 範圍具均等涵義及範圍内的所古 斤有修正與變化，均涵蓋在 内。 (產業上之可利用性） 藉由將依照本發明的電極播！ 品^ 構&體使用於電容器等方 面，便可使基材鋁材與介電質> 貝層間之密接性優越，且在維 M2XP/發明說明書(補件)/96-03/95141293 200807466 持所需耐電壓的前提下’可獲得高靜電電容。 【圖式簡單說明】 圖1為實施例5所獲得電極構造體試料的掃描型電子顯 微鏡照片。[Table 3] Valve metal electrostatic capacitance (β F / cm 2 ) The weight ratio of the dielectric layer to the Ming foil (8) Example 9 钽 1068 0. 43 Example 10 Titanium 1648 0. 31 Example 11 铌 1404 0. 39 Example 12 Zirconium 821 0. 35 Example 13 铨 979 0. 34 Comparative Example 5 - 590 < 0· 01 312XP / invention specification (supplement) / 96-03/95141293 20 200807466 [Table 4] Valve metal 5 V anodizing Electrostatic capacitance (β F/cm 2 ) 1 ον anodized electrostatic capacitance (AF/cm 2 ) leakage current (mA/cm 2 ) Example 14 钽 688 - 1. 50 Example 15 Titanium 1252 - 1. 61 Example 16 铌 832 1 85 Comparative Example 6 - 186 - 1.90 Example 17 - 488 - η 9 Example 18 Titanium - 613 9 Π 1 Example 19 Sharp - 502 2 19 Comparative Example 7 - 132 9 9Q [Table 5] Formulation ratio electrostatic capacitance Ti〇2 Si〇2 (β F/cm 2 ) Electricity / Total (V) Example 20 9 "1 1327 12 Example 21 5 5 985 27 Example 22 3 7 554 A 1 Comparative Example 6 One 186 0 ο Compare Example 7 One-to-one 132-0 > ~6~ ... n work-stretching, under the electrode structure obtained in the comparative example w of the 4th day, it is known that the electrostatic capacitance can be exhibited. The embodiments and examples disclosed above are intended to be illustrative only, and are not limited thereto. The scope of the present invention is not limited to the above-described embodiments of the present invention. In the case of the search for the profit, the corrections and changes in the scope and scope of the patent application are covered. (Industrial Applicability) By broadcasting the electrode according to the present invention! The product structure and the body are used in capacitors, etc., so that the adhesion between the substrate aluminum and the dielectric > bead layer is superior, and in the dimension M2XP / invention manual (supplement) / 96-03/95141293 200807466 A high electrostatic capacitance can be obtained under the premise of the required withstand voltage. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a scanning electron micrograph of an electrode structure sample obtained in Example 5.
312XP/發明說明書(補件)/96-03/95141293 22312XP/Invention Manual (supplement)/96-03/95141293 22