TW200805669A - Thin-film semiconductor device and manufacturing method thereof - Google Patents

Thin-film semiconductor device and manufacturing method thereof Download PDF

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Publication number
TW200805669A
TW200805669A TW096107732A TW96107732A TW200805669A TW 200805669 A TW200805669 A TW 200805669A TW 096107732 A TW096107732 A TW 096107732A TW 96107732 A TW96107732 A TW 96107732A TW 200805669 A TW200805669 A TW 200805669A
Authority
TW
Taiwan
Prior art keywords
crystal grain
active region
thin film
semiconductor device
laser light
Prior art date
Application number
TW096107732A
Other languages
English (en)
Chinese (zh)
Other versions
TWI342072B (enExample
Inventor
Akio Machida
Toshio Fujino
Tadahiro Kono
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200805669A publication Critical patent/TW200805669A/zh
Application granted granted Critical
Publication of TWI342072B publication Critical patent/TWI342072B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
TW096107732A 2006-03-13 2007-03-06 Thin-film semiconductor device and manufacturing method thereof TW200805669A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006067272 2006-03-13
JP2006347052A JP4169072B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200805669A true TW200805669A (en) 2008-01-16
TWI342072B TWI342072B (enExample) 2011-05-11

Family

ID=38682525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107732A TW200805669A (en) 2006-03-13 2007-03-06 Thin-film semiconductor device and manufacturing method thereof

Country Status (4)

Country Link
US (1) US8089071B2 (enExample)
JP (1) JP4169072B2 (enExample)
KR (1) KR20070093339A (enExample)
TW (1) TW200805669A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034366A (ja) 2008-07-30 2010-02-12 Sony Corp 半導体処理装置および半導体処理方法
KR20100036624A (ko) * 2008-09-30 2010-04-08 삼성전자주식회사 박막트랜지스터 기판 및 이를 갖는 유기발광 표시장치
JP2011082545A (ja) * 2010-11-24 2011-04-21 Sony Corp 熱処理装置、熱処理方法、半導体装置の製造方法および表示装置の製造方法
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249591A (ja) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜のレーザーアニール方法及び薄膜半導体素子
KR100296109B1 (ko) * 1998-06-09 2001-10-26 구본준, 론 위라하디락사 박막트랜지스터제조방법
TW445545B (en) * 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
JP2005525689A (ja) * 2001-08-27 2005-08-25 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク ミクロ構造の非整列による多結晶薄膜トランジスタの均一性の改善
JP2003077834A (ja) 2001-09-05 2003-03-14 Matsushita Electric Ind Co Ltd 結晶化半導体膜の形成方法およびその製造装置と薄膜トランジスタの製造方法およびそれらを用いた表示装置
JP4279498B2 (ja) * 2002-02-28 2009-06-17 株式会社 液晶先端技術開発センター 半導体薄膜の形成方法、半導体薄膜の形成装置および結晶化方法
JP2003332350A (ja) 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
KR100956947B1 (ko) * 2003-06-12 2010-05-12 엘지디스플레이 주식회사 실리콘 결정화 방법

Also Published As

Publication number Publication date
US20080054266A1 (en) 2008-03-06
JP2007281422A (ja) 2007-10-25
JP4169072B2 (ja) 2008-10-22
US8089071B2 (en) 2012-01-03
TWI342072B (enExample) 2011-05-11
KR20070093339A (ko) 2007-09-18

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