200805528 • 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種封裝IC (積體電路）或Lsi (大 cchipGnFiim>^^^ ，及將此知層板加工所得到之C〇F薄膜載帶（fUm earr ‘ tape)以及電子裝置。 【先前技術】 械au的W及及發達，封裝J c戋LS T辇+工+ At 路板的需”’子零件的印刷電 反^求急速增加。近年來，要求電子機器、 型化、高精敏彩度化、高功 該封裝方式係使用可以小型空間予以縣之‘ 令件封裝用薄膜載帶。 帶，： = =，麵中雖然有 ，言，⑽已被實用t間進行更高心 C0F係於薄膜狀之電路軾 合零件，在多半情形下，_^==+導體ic的複 或顯示器板而使用。繼而，、蓴之②之硬質電路板 胺等有機聚合物膜與金屬箱==路板係由將㈣亞 薄臈狀之電路板，二= 層的積層板所製成。 層板之金編上，對 使必需部分之感光性樹脂光硬化:曰音^卞進订曝光， 如㈣月日後，藉由韻刻除去未被覆硬化光阻之基 318853 6 200805528 板之被覆金屬層，蕤ώ + μ & 光阻之部分。；後以L電厲析出在未被覆硬化 目士 知取猎由剝離除去硬化光阻，而得刭 之導體圖案的電路板之方法。將恤 ⑽’有塗布液狀光阻劑、進行乾燥‘ 使感光性樹脂積層體進行層合（laminate)之方法。- 匕…用^積層板，係使用主要為將銅賤鍍於聚酿亞胺 :曰㈣所得之聚酿亞胺鋼fl積層板。當採用賤錄方式 於良率易因金屬層之針孔而惡化，故期望為無針孔 1亞胺金屬積層板。無針孔之金屬積層板，係有將不 =鋼m延銅箔、或電解姻與聚醯亞料 ㈣可藉由洗禱或層合方式將聚_層: ° _于到，但為了提昇接著力等，有將熱塑性聚醉亞 胺層形成於金屬落上者。 f从騐亞 面，1C日日片封裝係有從ACF、NCp、 等以低温進行封穿之方4βΑ Λ…t曰波心口 〇ΠΛ〇 又 ^ Au—Au 接合、Au--Sn 接合等 _ 、以上之高溫進行封裝之方式，但，TAB線上之封裝 ’或就晶片與電路之連接可靠性而言，常採用、_α: 接s、Au-Sn接合。 以濺鍍方式而得到聚醯亞胺積層板時，因無埶可塑性 樹月旨層，故於歡以上之晶片封裝時不會引起金屬電路 沈入聚醯亞胺層中之現象，但有與金屬配線之接著性差 如上述之問題。 曰^由將聚醯亞胺層塗布或壓合等而積層於銅箔時，為 提ΠΤ鋼名與聚醯亞胺層間之接著力，且為了賦予耐熱 318853 7 200805528 性，一般必須使用熱可塑性之聚醯亞胺，但於綱。c以上 t 片封科’有在金屬電路與以片之凸塊產生偏 私电路沈人熱可塑性聚酿亞胺層中、底部填充膠無法進 入等問題。料由使㈣亞胺層產生熱變形，而於電路與 ，I c晶片之凸塊產生偏移，則如電路與J c晶片之凸塊不接 -合，或接觸到鄰接之電路而產生短路等在電性連接可靠性 產生問題。又，由於電路沈入熱可塑性聚醯亞胺層中，或 •聚醯亞胺層大幅地波浪狀變形，故IC晶片與聚醯亞胺之間 隙、欠乍，造成應力集中之處，所以發生底部填充膠無法進 入、邊緣短路（edge Short)、電路從聚醯亞胺層剝離等問 題。 (專利文献1)日本特許2574535·號公報 (專利文獻2 )日本特開2 〇 〇 3 - 3 4 0 9 61號公報 專利文獻1中，係記載著對聚醯亞胺表面施行銅之無 笔角子電鍍’在將依需要而實施電解電鑛之基板施予1 2 Q至 ⑩420 c之熱處理的銅聚醯亞胺基板中，該聚醯亞胺樹脂在 120至420°C之範圍内其熱膨脹係數為15至20ρρπι/^，可 改善翹曲的銅聚醯亞胺基板之製造方法，但由於濺鍍方式 使良率易因金屬層之針孔而惡化，或由於導體與聚醯亞胺 層之接著性低，故於1C晶片封裝時會有金屬電路從聚醯亞 胺層剝離等問題。 在專利文獻2中，係記載著聚醯亞胺層之溼度膨脹係 數為0%RH至未達10%RH，且熱膨脹係數為10至25ppm/ °C的銅聚醯亞胺基板金屬積層板，但有30 0°C以上之1C晶 8 318853 200805528 片封I日守聚醯亞胺層大幅變形、電路與iC晶片之凸塊產生 偏私至屬電路沈入熱可塑性聚醯亞胺層中、底部填充膠 無法進入等問題。 、如上述般，使聚醯亞胺之熱膨脹係數在某範圍以下， X使元、艾幵少’皿度在某範圍以上係已被揭示，但在製造 步驟中使用Au-Su共晶的覆晶封裝時，由於被曝露於3〇〇 =以上之高温高壓，故有聚醯亞胺層產生熱變形、於金屬 甩路與1C晶片之凸塊產生偏移、或金屬電路與聚醯亞胺層 產生剝離、電路沈入等問題。 【發明内容】 [發明欲解決之課題] 、*本發明係目的在於提供一種C0F用積層板及C0F薄膜 载帶以及電子裝置，該⑽用積層板之尺寸安定性、與金 屬電路，密著性優異’在C0F製造步驟中之杬，共晶時， 可抑制薄膜載平因熱產生之尺寸變化或變形，不發生金屬 電路與1C晶片之凸塊產生偏移之問題、或電路沈入孰可塑 j聚醯亞胺層中之問題、電路從聚酿亞胺層剝離之問題 技2適於底σΜ真充踢’可提昇電子零件與薄膜載帶之連 接可靠性。 [用以解決課題之手段] 本發明之⑽用積層板，係將導體積層於於絕緣層之 :緣ΪΪ:而成之⑽用積層板，其特徵為：其中，前述 二、麵為由2層以上之聚酿亞胺系樹脂所構成的多層構 & ’、、、邑緣層之玻璃轉移溫度為35(rc以上，且3〇〇至35〇 31SS53 9 200805528 .ίίΐίΓ數為7G卿。又’本發日㈣將上述⑽ 男曰板予以加工所得到之c〇F薄 發明係在將上述⑽用積層板予以1 更進步本 I妆L !极丁 M迅路加工所得到之電路 土反上，使其搭载電子零件而成之電子裝置。 ，在上述⑽用積層板t，藉由滿足一 -上，而可賦予更良好之⑽用積層板。/者以200805528 • IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a packaged IC (integrated circuit) or Lsi (large cchipGnFiim>^^^, and a C〇F film obtained by processing the layered board The carrier tape (fUm earr ' tape) and the electronic device. [Prior Art] The mechanical and electrical development of the mechanical au, and the packaging of the J c戋LS T辇+工+At board In recent years, it has been required to use electronic equipment, type, high-sensitivity colorization, and high-power packaging. It is a small-sized space for the film packaging of the 'packages' of the county. Band, : = =, although there is, In other words, (10) has been used for higher-level C0F in a film-like circuit-bonding part, and in most cases, _^==+ conductor ic or a display board is used. Then, Organic polymer film such as hard circuit board amine and metal box == road board is made of (4) sub-thin-like circuit board, two = layer of laminated board. The gold plate of the layer is made to make the necessary part Photosensitive resin photohardening: 曰 sound ^ 卞 order exposure, such as (four) month, The portion of the coated metal layer of the 318853 6 200805528 board is removed by rhyme, and the part of the photoresist is 蕤ώ + μ & 后 后 后 ; ; ; ; ; 以 以 以 以 以 以 以 L L L L L L L L L L L L A method of hardening a photoresist and obtaining a conductive pattern of a circuit board. A method of laminating a photosensitive resin laminate by applying a liquid photoresist to a shirt (10). - 匕... The laminated board is made of a poly-imine steel f-layer laminate which is mainly obtained by plating a copper bismuth on polyaniline: 曰(4). When the smear is used, the yield is deteriorated due to the pinhole of the metal layer. It is expected to be a pinhole-free 1 imine metal laminate. The metal-layered plate without pinholes will be replaced by a steel foil, or an electrolysis and a polythene (4), which can be washed or laminated. Poly _ layer: ° _ arrived, but in order to improve the adhesion, etc., there is a layer of thermoplastic polyimine layer formed on the metal. f from the inspection of the sub-surface, 1C Japanese film packaging system from ACF, NCp, etc. Blocking at low temperature 4βΑ 曰...t曰波心〇ΠΛ〇〇ΠΛ〇^^ Au-Au bonding, Au--Sn bonding _, the above high temperature for packaging, but the package on the TAB line or in terms of the reliability of the connection between the chip and the circuit, often used, _α: s, Au-Sn bonding. In the case of an imide laminate, since the layer is not plastic, it does not cause the metal circuit to sink into the polyimide layer during the wafer package, but the adhesion to the metal wiring is as described above.曰^ When the polyimine layer is coated or pressed to be laminated on a copper foil, it is an adhesion between the steel name and the polyimide layer, and in order to impart heat resistance to 318853 7 200805528, it is generally necessary to use Thermoplastic polyimine, but in the class. c. The above t-film seals have problems such as the intrusion of the underfill in the metal circuit and the bumps in the sheet, and the underfill can not enter. The material is thermally deformed by the (iv) imide layer, and the bumps of the circuit and the IC chip are offset, such as the circuit does not connect with the bump of the Jc chip, or contacts the adjacent circuit to cause a short circuit. Waiting for problems in the reliability of electrical connections. Moreover, since the circuit sinks into the thermoplastic polyimide layer, or the polyimine layer is largely wavy, the gap between the IC wafer and the polyimide film is insufficient, causing stress concentration, so that occurs. The underfill does not enter, the edge is short, and the circuit is stripped from the polyimide layer. (Patent Document 1) Japanese Patent No. 2, 574, 535 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. 3 - 3 4 0 9 61 Patent Document 1 describes the use of copper for the surface of polyimine. "Corner plating" is a thermal expansion of a polyimine resin in a range of 120 to 420 ° C in a copper polyimine substrate which is subjected to heat treatment of a substrate of electrolytic iron ore as required. The coefficient is 15 to 20 ρρπι / ^, which can improve the manufacturing method of the warped copper polyimide substrate, but the yield is easily deteriorated due to the pinhole of the metal layer due to the sputtering method, or due to the conductor and the polyimide layer Since the adhesion is low, there is a problem that the metal circuit is peeled off from the polyimide layer during the 1C chip package. Patent Document 2 describes a copper polyimide substrate metal laminate having a polycondensation coefficient of 0% RH to less than 10% RH and a thermal expansion coefficient of 10 to 25 ppm/° C. However, there is a 1C crystal above 30 °C. 8 318853 200805528 The film is greatly deformed by the poly-imine layer of the I-day, and the bumps of the circuit and the iC chip are biased into the circuit and sink into the thermoplastic polyimide layer. Filler can't enter and other issues. As described above, the thermal expansion coefficient of the polyimine is less than or within a certain range, and X is less than the above, and the degree of the dish is above a certain range. However, the Au-Su eutectic is used in the manufacturing step. In the case of crystal encapsulation, due to exposure to high temperature and high pressure of 3 〇〇 = above, there is thermal deformation of the polyimide layer, offset of the bumps of the metal circuit and the 1C wafer, or metal circuits and polyimine The layer has problems such as peeling and sinking of the circuit. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] The present invention is to provide a laminated board for COF, a COF film carrier tape, and an electronic device. The dimensional stability of the laminated board (10) is compatible with a metal circuit and adhesion. Excellent 'In the C0F manufacturing step, when eutectic, it can suppress the dimensional change or deformation of the film flat due to heat, and there is no problem that the metal circuit and the 1C wafer bump are offset, or the circuit sinks into the plastic j. The problem in the polyimine layer, the problem of the circuit being stripped from the polyimine layer. The technique 2 is suitable for the bottom σΜ true charge kicking' to improve the connection reliability of the electronic component and the film carrier tape. [Means for Solving the Problem] The laminated board for (10) of the present invention is a laminated board in which the conductive layer is formed on the insulating layer: (10), wherein the second surface is composed of 2 The glass transition temperature of the multilayer structure & ', and the edge layer of the layer of the above-mentioned polyacrylic resin is 35 (rc or more, and 3〇〇 to 35〇31SS53 9 200805528 . ίίΐίΓ is 7G qing. In addition, the 'c"F thin invention obtained by processing the above (10) men's slabs is based on the circuit of the above-mentioned (10) laminated board. On the other hand, in the electronic device in which the electronic component is mounted, the laminated board t of the above (10) can be provided with a better laminated board for (10) by satisfying one-up.
1 )絶緣層係於非熱可塑性聚醯亞μ M 可塑性聚承馱亞胺層之早面或雙面具有熱 ^層’以下述式⑴所計算之z為2()以下。 乙 α xx 一 p xy ( 1 ) 惟， α ·熱可塑性聚醯亞胺層之 。^ ^ (ppm/t ) 主350 C的熱膨脹係數 X··熱可塑性聚醯亞胺声 点··非熱可塑性聚^ j 絕緣層總厚度的占有比率 (卿/。〇 “層之_至咖。c的熱膨脹係數 非熱可塑性聚醯亞胺厣 率 曰尽度於絕緣層總厚度的占有比 2) 與絕緣層直接接觸之導 /zm以下。 表面的表面粗糙度Rz為1·〇 3) 絕緣層係將聚醯亞胺之 進行醯亞胺轉化所得到者。一體/合液直接塗布於導體，再 又，本發明係在將上述cqf 得到之電路基板上搭载泰 、日板予以电路加工所 子裝置可藉由以下之方、、各今件而成之電子裝置，但此電 方去進行製造。亦即，準備積層板， 318853 10 200805528 由2:緣層之早面或雙面具有導體，前述絕緣層為 之玻替二胺系樹脂所構成的多層構造，絕緣層 路圖案後，在前述“1=層板之導體加.工财^ 封聚電子零件，基板上以3，c以上 ‘C宜滿足上述1⑴)的-編 以下詳細說明本發明。 =用積層板’係由成為導體之金屬箔與絕緣所 成，金屬、洛係可只於絕緣芦σ η# 係成為2層以上之多二!!：面 雙面。絕緣層 士、夕^备仏Α各層係由聚醯亞胺樹脂所椹 。絕緣層係具有非熱可塑性聚萨亞胺声沒赦^ ’ 亞胺層各-層以上，以石,4如版層與熱可塑性聚酸， 全屬笔相桩主* · 乂上乂一層之熱可塑性聚醯亞胺層與 跑^之範圍。种之'4層的較佳厚度範圍為 =所使用=金屬箔的材f，例如列舉不_、鋼、 趣 或鋼合金為較佳。於金屬落亦可藉由參 '.、鍍鎳、矽烷偶合劑等而實施表面處：二 係無限制，但隨著金屬之 ，屬泊之厚度 為5至PitCh)化，宜 了枯」 更宜為5至25“之範圚。又，為 緣層提昇、使iC晶片封裝性提高，與絕 接之銅泊面的表面粗糙度Rz宜為1 〇“ffi以下 絕緣層係玻璃轉移溫度（Tg)為35(rc以上，較佳為 318853 11 200805528 350 C至450°C之範圍。此處，絕緣層之玻璃轉移溫度係可 以動態黏彈性測定裝置進行測定。具體而言，係以實施例 所示之條件測定。 又，絕緣層在300至35〇。〇之熱膨脹係數（在3〇〇至 350 C之範圍内所測定之熱膨脹係數的平均值）必須為 70pPm/°C以下，較佳為〇至50ppm/t：以下。在下述'中，此 300至350°C之熱膨脹係數僅意指熱膨脹係數。 ,當絕緣層成為具有至少一層之非熱可塑性聚醯亞胺層 與至少一層之熱可塑性聚醯亞胺層的多層構造時，絕緣^ 之較佳構成，係鄰接於非熱可塑性聚醯亞胺層之單面或^ 面而設有熱可塑性聚醯亞胺層的2層或3層的多層構造^ 再者，宜為至少-層之熱可塑性聚酸亞胺層與金^= ’ 接。本發明中，熱可塑性聚醯亞胺係在高於^溫度夕較 脹係f =幅變化者’具體而言’意指在高於Tg溫度之線膨 脹係數變化1〇〇ρρπι/°(；以上者。 >然後’絕緣料、宜使以前H⑴所求得之 20以下，更宜為10以下。例如在式（ ’、、 °c、々為如卿斤、熱可塑性聚醯亞胺層厚度 非熱可塑性《亞胺層厚度為3‘時，絕緣層厚产為 0^75 〇'25，y^〇-75^2^Ox〇.25-30x 0.75=-10. 〇。2之值雖宜為2〇以下，但 的範圍。使Z之範圍設為此範圍，可抑制：;封料至之： 片下的波浪狀起伏變形，並亦 曰片封衣打之曰曰 產生之空穴㈤d)產生。又真底部填充膠時所 工u )係α >冷，χ < y時 318853 12 200805528 更有效。 厚度亞胺層與熱可塑性聚酿亞胺層之 «亞胺層之厚产為;宜滿足上述要件，宜使非熱可塑性 /亞胺層之更幻。—之範圍。非熱可塑性聚酿 妝智之更佳厚度範圍為5至5〇Ym之笳囹^ _醯亞胺層之較佳一: 私之乾圍。熱可塑性聚 之r —子又乾圍為〇.5至10録，更佳為1至5 1/2之^圍1宜4非熱可塑性聚醯亞胺層之厚度的WO至 體，層之聚醯亞胺層的聚酸亞胺或其前驅 之方胺與特定之讀酸二軒以符合其特性 '、仃砥擇，於溶劑中進行聚合而得到。 合成Si:二塑性聚酸亞胺層之非熱可塑性聚亞胺的 二Ϊ、4 4 $，可舉例如鄰苯二胺、對苯二胺、間策 ，—胺基苯基醚、3, 4，-二胺基二苯美 一胺基二苯基醚、4 4，___ — 3, 3 ' -〜4,4 一胺基—聯苯、4,4，-二胺基_2,2，_ -甲基聯苯、2,2、雙’二 可具有燒基或絲基等取代基之“、)本^〕丙規、 :!係可早獨使用或使用2種類以上。又，亦可盘1 上。 ι妝戍刀之使用置宜為70莫耳％以 例如可塑性聚酸亞胺的合成所使用的四缓酸二酐可兴 2 2 3 :四甲酸二酐、3’3，，4,4’-聯苯四_二軒、牛 類上U -聯苯四㈣等。此等係可單獨使用或使用 心上。又，雖然亦可與其他之四㈣二酐併用上’ 318853 13 200805528 四叛酸成分之使用量宜為7〇莫德上。 再者’形成非熱可塑性气 亞胺係可使用市隹之亞版層之非熱可塑性聚酿 體之聚Si亞胺溶液或 絲隸次其中間 ^ ^ Kapt〇n 〇±#m! y ' S； SGA ' SN ； 公司之Apica…主冊::、V、EN;鐘卿工驗 間體。 °商払）AH、NPI、HP等之薄膜或其中 所使I:熱：塑：聚醯亞胺層之熱可塑性聚醯亞胺的合成 用的一胺可舉例如，，3 —雙胺基苯氧基)苯、4, 4，— 3又3 基苯氧基）聯苯、妨-雙（4-胺基苯氧基）聯苯、 幻而—Λ ^、2’2’—雙~(4—(4—胺基苯氧基）苯 二以。此等係可單獨使用或使用2種類以上。又， 之二胺併用’但上述二胺成分之使用量宜 為70莫耳％以上。 熱可塑性聚醯亞胺的合成所使用的時酸二酐係可 例如均苯四甲酸二酐、3,3，，4,4，_聯苯四_二肝、 ，3, 3、聯苯四㈣等。此等係可單獨使用或使用以重 _上。X ’雖然亦可與其他之四㈣二酐併用，但上述 四叛酸成分之使用量宜為7 〇莫耳％以上。 本發明之C0F用積層板，係可以於金屬荡表面塗布執 可:錢聚酿亞胺或其前驅體溶液（以下，亦稱為凡立水)， 接著塗布非熱可塑性聚醯亞胺或其前體溶液，藉由乾 無、依需要之熱處理而進行硬化之方法來製造。塗布凡立 318853 14 200805528 水之方法，可採用壓鑄模塗法（diec〇a 親塗法、凹板塗布法、簾塗法、喷塗法等公:二布法、 時，依需要可更進一步多層地塗布熱可塑性或非熱可塑= 聚醯亞胺層或是复前鳃駟、〜、六 夕氏lL ^丄 2生 •亞胺芦或非心: 有熱可塑性聚醯 ^ "先、β 2性聚醯亞胺層時’此等係可相同或相 -異。使所塗布過之凡立水進行乾燥、硬化的方法，係可 用-般之加熱乾燥爐。乾燥爐之環境係可㈣空氣十生1) The insulating layer is formed on the early surface of the non-thermoplastic poly-μ μ M plastic-coated polyimidazole layer or has a thermal layer on both sides. The z calculated by the following formula (1) is 2 or less. B α xx a p xy ( 1 ) However, α · thermoplastic polyimine layer. ^ ^ (ppm/t) Thermal expansion coefficient of main 350 C X·· Thermoplastic polyimine sound point ·· Non-thermoplastic plasticity ^ j The ratio of the total thickness of the insulating layer (Qing /. 〇 "Layer _ to coffee The coefficient of thermal expansion of c is not the ratio of the thermal plasticity of the polyimide to the total thickness of the insulating layer. 2) The direct contact with the insulating layer is below /zm. The surface roughness Rz of the surface is 1·〇3) The insulating layer is obtained by converting a polyimine from ruthenium imine. The integrated/liquid mixture is directly applied to a conductor, and the present invention is equipped with a Thai and a Japanese plate on a circuit board obtained from the above cqf for circuit processing. The device can be manufactured by the following, and the electronic device of the present invention, but the electric device is manufactured. That is, the laminated board is prepared, 318853 10 200805528 by 2: the edge layer has an early or double side The conductor, the insulating layer is a multilayer structure composed of a glass-diamine-based resin, and after the insulating layer pattern, the above-mentioned "1=layer of the conductor plus the workmanship ^ sealing the electronic component, the substrate is 3, c The above description of the above 1(1) should be described in detail below. = The laminated board is made of a metal foil and a conductor that are conductors. The metal and the Luo system can be made up of two or more layers only for the insulating reed σ#!!: The surface is double-sided. Insulation layer The layers of the shovel and the shovel are made of polyimide resin. The insulating layer has non-thermoplastic polyisoimine sound 赦 ^ 'imine layer each layer - above, stone, 4 such as plate layer and thermoplastic polyacid, all pens pile main * · 乂 乂 之The range of thermoplastic polyimine layers and running. The preferred thickness range of the 'four layers' is = the material f of the metal foil used, for example, preferably, steel, fun or steel alloy is preferred. In the case of metal falling, the surface can be implemented by the reference of '., nickel plating, decane coupling agent, etc.: the second system is not limited, but with the metal, the thickness of the mooring is 5 to PitCh), which should be dry. It should be 5 to 25". In addition, the edge layer is improved, the encapsulation of the iC chip is improved, and the surface roughness Rz of the copper berth surface is preferably 1 〇 "ffi below the insulating layer glass transition temperature ( Tg) is 35 (rc or more, preferably 318853 11 200805528 350 C to 450 ° C. Here, the glass transition temperature of the insulating layer can be measured by a dynamic viscoelasticity measuring device. Specifically, the embodiment is The conditions shown are as follows: Further, the insulating layer is 300 to 35 Å. The thermal expansion coefficient of 〇 (the average value of the thermal expansion coefficient measured in the range of 3 〇〇 to 350 C) must be 70 pPm / ° C or less, preferably It is 5050ppm/t: below. In the following ', the coefficient of thermal expansion of 300 to 350 °C only means the coefficient of thermal expansion. When the insulating layer becomes a non-thermoplastic polyimide layer with at least one layer and at least one layer In the multilayer construction of the thermoplastic polyimide layer, the insulation is preferably The structure is a two-layer or three-layer multilayer structure in which a thermoplastic polyimide layer is provided adjacent to one side or the surface of the non-thermoplastic polyimide layer. Further, it is preferably at least a layer of thermoplasticity. The polyimine layer is connected with gold ^= '. In the present invention, the thermoplastic polyimine is higher than the temperature of the swelling system f = amplitude change 'specifically' means higher than Tg temperature The coefficient of linear expansion changes by 1〇〇ρρπι/° (; the above. > Then the insulating material should be 20 or less, more preferably 10 or less, as the previous H(1). For example, in the formula ( ', , °c, 々 For Ruqing Jin, the thickness of the thermoplastic polyimine layer is non-thermoplastic. When the thickness of the imine layer is 3', the thickness of the insulating layer is 0^75 〇'25, y^〇-75^2^Ox〇.25 -30x 0.75=-10. 〇.2 value should be 2〇 or less, but the range is such that the range of Z is set to this range, which can suppress:; the sealing material to: the undulating deformation under the sheet, and It is also produced by the hole (5) d) produced by the film seal. It is also true when the bottom is filled with glue. u) is α > cold, χ < y when 318853 12 200805528 is more effective. Thick imine layer and heat The thicker layer of the imino layer of the plasticized polyamidide layer; the above requirements should be met, and the non-thermoplastic/imine layer should be more versatile. The range of thickness of the non-thermoplastic polystyrene is better. 5 to 5 〇 Ym 笳囹 ^ _ 醯 醯 imide layer of a better one: private dry circumference. Thermoplastic poly r r - sub-dry and dry 〇. 5 to 10 recorded, more preferably 1 to 5 1 / The thickness of the 2 to 4 non-thermoplastic polyimine layer of the WO to the thickness of the layer of polyimine layer of the polyimide or its precursor of the amine and the specific reading acid two Xuan to meet its The characteristics ', the choice, obtained by polymerization in a solvent. Synthetic Si: a non-thermoplastic polyimine layer of di-n-type, 4 4 $, such as o-phenylenediamine, p-phenylenediamine, inter-, phenyl-phenyl ether, 3, 4,-Diaminodiphenylmeramidodiphenyl ether, 4 4,___ 3,3 '-~4,4-amino-biphenyl, 4,4,-diamino 2,2 , _-methylbiphenyl, 2, 2, double 'two may have a substituent such as a burnt group or a silk group, and the above] can be used alone or in combination of two or more types. It can also be used on the tray 1. The use of the ι makeup trowel is preferably 70 mol%. For example, the tetras-acid dianhydride used in the synthesis of the plastic polyimine can be used as a 2 2 3 : tetracarboxylic dianhydride, 3'3 , 4,4'-biphenyl tetra- 2 Xuan, U-biphenyl tetra (4) on cattle, etc. These systems can be used alone or in the heart. Also, although they can be used together with other tetrakis(tetra) dianhydrides. ' 318853 13 200805528 The use of four repulsive components should be 7 〇 Mod. In addition, the formation of non-thermoplastic gas imine can be used in the non-thermoplastic poly-brom of poly-imine. Solution or silk in the middle ^ ^ Kapt〇n 〇 ± #m! y ' S; SGA ' SN The company's Apica... main book::, V, EN; Zhongqing laboratories. °Shang 払, AH, NPI, HP, etc., or the I: heat: plastic: polyimine layer thermal plasticity The monoamine used for the synthesis of the polyimine may, for example, be a 3-bisaminophenoxy)benzene, a 4,4,3-trisylphenoxy)biphenyl or a bis-(4-amino group). Phenoxy)biphenyl, phantom-Λ^, 2'2'-bis-(4-(4-aminophenoxy)benzene. These may be used alone or in more than two types. The diamine is used in combination, but the amount of the above diamine component is preferably 70 mol% or more. The synthetic dianhydride used in the synthesis of the thermoplastic polyimine may be, for example, pyromellitic dianhydride, 3, 3, , 4, 4, _ biphenyl tetra-hepatic, 3, 3, biphenyl tetra (four), etc. These can be used alone or used to weight _. X ' although it can also be combined with other four (tetra) dianhydride However, the above-mentioned four repulsive components are preferably used in an amount of 7 〇 mol% or more. The laminated plate for C0F of the present invention can be applied to a metal surface coating: a phenolic imine or a precursor solution thereof (hereinafter, Also known as 凡立水), then painted The non-thermoplastic polyimine or its precursor solution is prepared by dry-free and heat-treated according to the need of heat treatment. The method of coating varnish 318853 14 200805528 water can be die-casting (diec〇) a Pro-coating method, gravure coating method, curtain coating method, spray coating method, etc.: When the second cloth method is used, the thermoplastic or non-thermoplastic type = polyimine layer may be further coated in multiple layers as needed.鳃驷, ~, Liu Xi's lL ^ 丄 2 raw • imine reed or non-heart: have thermoplasticity poly 醯 ^ " first, β 2 polyimine layer when 'these can be the same or different . The method of drying and hardening the coated varnish water can be carried out by heating the drying furnace in the same manner. The environment of the drying furnace can be (4) air ten
Tmv^i # ° eVc μ,Λ 度範圍。硬化係進行至聚酿亞胺前驅體 成為聚醯亞胺為止。又，銅箔产〜_ #刻處理等使銅荡厚度形成特定:厚度Γ m藉由 於雙面具有金屬落之積層板，係Ϊ使絕緣層形成3騷Tmv^i # ° eVc μ, range of 。. The hardening is carried out until the polyimide intermediate precursor becomes polyimine. In addition, the copper foil is produced by the etch treatment to make the thickness of the copper slab specific: the thickness Γ m is formed by the laminated board having the metal falling on both sides, and the insulating layer is formed.
以上，取外層為熱可塑性聚 U 昆 久^亞胺層，猎由如將金屬箔埶 屋合於此取外層之熱可塑性⑽亞胺叙表 ^: 醒亞胺膜之單面或雙面===係藉由於非熱可塑性聚 溶液，盘上述方法H熱可塑性聚釀亞鞍或其前驅體 蔣令屬笮勃段入人土 乍开/成夕層之聚醯亞胺層， 將孟屬泊熱Μ合於熱可塑性聚醯 行瓿壓合之方半仫^ 4士 w 应妝層之表面來製造。進 :方去係_限制，但可採用例如故麗(hot press)法、熱層合法等公知之方法。 …iUotAbove, the outer layer is made of thermoplastic poly-U Kunjiu imine layer, and the thermoplasticity of the outer layer is taken by the metal foil smashing house. (10) Imine narration ^: One or two sides of the yoke film == By means of non-thermoplastic poly-solution, the above method H thermoplastic poly-sand or its precursor Jiang Ling is a poly-imine layer of the earthworm opening/integration layer The shovel is combined with the surface of the thermoplastic layer. In addition, the method is limited, but a well-known method such as a hot press method or a thermal layering method can be employed. ...iUot
從C0F用積層板製造c〇F 可適當選擇適用此等公知之方法=▼的方法係公知， 板切割成特定寬之薄膜，於薄膜牛例如將⑽用積層 肩箱面側設置感光性樹脂層、^没置鏈輪後’於金 k過如可得到特定電路之遮 318853 15 200805528 .接:!行崎理，除去未曝光部份或曝光部 I所次’以所殘留之樹脂層作為光阻而茲刻處 去光箱以形成電路圖案，更進-步依需要而除 去先阻以形成C0F用薄膜載帶等之方法。 本么月之電子裳置，係在將上述⑽ 之電路基板上搭載電子零件者。然後= 方法進行製造。亦即，首先準物 1由2 w / 積層板之絕緣層為 曰 來鹼亞胺系樹脂所構成的多層構造，絕缘芦 之玻璃轉移溫度為靴以上，且3〇〇至35代之熱；；、= 數為70ppm/ C以下；伸特別是妨竣爲 …、 ’、 胺#之覃面切品 非熱可塑性聚酿亞 胺層之早面或雙面具有熱可塑性聚酸亞胺層 (1)所計算之2為20以下。 且以上您式 其次，將積層體之導體加工成任意之 之電路圖案形成，係可適用與從上述咖用 製造= 膜刪之方法相同之方法。在如此經電路加= 土板上封^子零件，但此處所謂之電子零件係指宜為 在以1C晶片或LSI晶片所代表之半導體元件等電子焚件; 设有用以取得上述電路基板上之導體電路導通的凸塊者，. 封裝係在·^上實施。又，當電子零件係具有凸塊之 附凸境電子零件時’以電路基板的電路圖案之一部分金電 接之方式實施。若依據本發明之電 置々衣4方法’由於使用積層體之絕緣層為滿 者，即使在3_以上之高溫進行封裝時，亦可享受與本 318853 16 2圓U5528 發明之COF積層板所產生之 泛 好的電子裝置。又，在太熟 為相同之效果，可製造良 因所準備之積層板為特徵之子衣置的製造方法中’ 適合於本發明之電子裳置的製造板較佳之態樣係亦 [發明之效果] ' 右依據本發明，可担糾 载罄，兮Γηϋ k 種^卯用積層板及C0F薄膜 載▼，該⑽用積層板之尺寸安Μ人‘ 之穷I #彳& Β9 > 、至屬電路與絕緣層 乏在考性優異，無針孔， 上莴、、田沾ΤΓ日u 牡用以衣造C0F之粍費30(TC以 上皿的ic晶片封裝步驟中 日主，όρ女生丨—+ Au接5或Au-Sn共晶 m …、’坏產生的尺寸變化或#形，於冷 屬V路與1C晶片的凸塊盔偏 " 、“ 亞脸恳由^ 义…偏私，可防止金屬電路沈入聚酉! 鱼亦可提昇能充填底部填充膠之電子 載π的電連接可靠性。 【實施方式】 井第1圖係用以說明單面導體之C0F用積層板之細 ·:截㈣’由絕緣層10與導體20所構成。絕緣層10係、 心可塑性聚酿亞胺層1卜非熱可塑性聚醯亞胺声12及孰 可塑性聚醯亞胺声13之-爲碎德士為 曰 …、 曰 之一層所構成，熱可塑性聚醯亞胺肩 13係與導體20連接。 '第2圖係表示將π晶片封裝於c〇F用薄膜载帶之例的 灵〜圖表示IC晶片1之經鍍金的凸塊2接合於cop用薄 ，載帶之絕緣層3上所形成的電路4之狀態。此時，由於 疋以350至4〇〇 c左右之高溫熱壓合，壓合部之絕緣層3 厚度會從初始厚度T1沈入為T2厚度。希望儘可能地減少 17 318853 200805528 此厚度之差（T1 — T2)。 [貫施例] 以下，依實施例更為詳細地說明本發明。 使用於實施例之簡稱下述。 PMDA 均苯四甲酸酐It is known that the method of applying the known method = ▼ can be suitably selected from the C0F laminated plate. The method of cutting the film into a film of a specific width is used, and for example, the photosensitive resin layer is provided on the side of the laminated shoulder box of the film. ^, after the sprocket is not placed, 'the golden circuit can be used to obtain the specific circuit cover 318853 15 200805528. Then:! Xie Qiali, remove the unexposed part or the exposure part I times with the remaining resin layer as light The film is cut into the light box to form a circuit pattern, and the method of removing the first resistance to form a film carrier tape for the COF or the like is further performed as needed. This month's electronic display is based on the electronic component mounted on the circuit board of (10) above. Then = method to make. That is, firstly, the first object 1 consists of a multilayer structure composed of a 2 w / laminate insulating layer of a bismuth base imine resin, and the glass transition temperature of the insulating reed is above the boot, and the heat of 3 to 35 generations; ;, = the number is below 70ppm / C; stretch especially for the ..., ', amine # 覃 切 cut non-thermoplastic polyalthene layer of the early or double-sided thermoplastic polyimide layer ( 1) The calculated 2 is 20 or less. Further, the above method is followed by processing the conductor of the laminated body into an arbitrary circuit pattern, which is applicable to the same method as the method of manufacturing the above-mentioned coffee = film. In this way, the component is sealed by the circuit plus the earth plate, but the electronic component referred to herein is preferably an electron incinerator such as a semiconductor component represented by a 1C chip or an LSI chip; The bumps of the conductor circuit are turned on. The package is implemented on the ^. Further, when the electronic component has a convex electronic component with a bump, it is implemented by a part of the circuit pattern of the circuit board. According to the method 4 of the present invention, since the insulating layer using the laminated body is full, even when the package is sealed at a high temperature of 3 _ or more, the COF laminated board invented by the 318853 16 2 round U5528 can be enjoyed. A good electronic device produced. Moreover, in the manufacturing method of the sub-clothing which is characterized by the fact that the over-cooking is the same effect, it is possible to manufacture the laminated board which is characterized by the laminated board prepared by the present invention, the preferred aspect of the manufacturing board which is suitable for the electronic skirt of the present invention is also [effect of the invention ] ' Right according to the present invention, it is possible to carry out the correction of the 罄, 兮Γηϋ k kinds of laminated plates and C0F film loading ▼, the (10) size of the laminated board is used by the Μ人's poor I #彳& Β9 > Dependent circuit and insulation layer are excellent in testability, no pinholes, on the end of the,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,丨—+ Au is connected to 5 or Au-Sn eutectic m..., 'bad size change or # shape, in the cold V-way and 1C wafer bumps biased ", "sub-face 恳 by ^ 义... It can prevent the metal circuit from sinking into the cluster! The fish can also improve the reliability of the electrical connection of the electronic load π which can fill the underfill. [Embodiment] The first figure of the well is used to illustrate the laminated board for C0F of single-sided conductor. Thin ·: cut (four) 'consisting of the insulating layer 10 and the conductor 20. The insulating layer 10, the core plasticity of the polyimine layer 1 Plastic polyimine sound 12 and bismuth plasticity polyimine sound 13 - is composed of one layer of broken squid 、, 曰, thermoplastic thermoplastic polyimide rim 13 is connected with conductor 20. 'Fig. 2 The figure shows that the π-wafer is packaged on the film carrier tape for c〇F. The gold-plated bump 2 of the IC wafer 1 is bonded to the cop thin, and the circuit 4 formed on the insulating layer 3 of the carrier tape is used. At this time, since the crucible is heat-pressed at a high temperature of about 350 to 4 〇〇c, the thickness of the insulating layer 3 of the nip portion is sunk from the initial thickness T1 to a thickness of T2. It is desirable to reduce the thickness as much as possible. 17 318853 200805528 The difference (T1 - T2). [Examples] Hereinafter, the present invention will be described in more detail by way of examples. The abbreviations used in the examples below are as follows. PMDA pyromellitic anhydride
BpDA 3, 3’，4, 4,-聯苯四羧酸二酐 DAPE 4, 4’-二胺基二苯基醚 MT 4, 4’-二胺基一2, 2’-二甲基聯苯 BAPP 2,2’—雙（4- (4-胺基苯氧基）苯基）丙烷 MPB 4, 4’ -雙（4_胺基苯氧基）聯苯 TPE 丨，3-雙（4-胺基苯氧基）苯 DMAe 二甲基乙醯胺 [實施例1 ] 在1升之分離式燒瓶中使MT28· lg與TPE4· 3g —邊攪 拌邊溶解於DMAc425g。其次，將PMDA25· 3g與BPDA8· 5g • j。卩彳77地k人於此溶液中’進行聚合反應，得到高黏度 之非熱可塑性聚醯亞胺前驅體溶液A。 同樣地，使 BAPP18· 0g 與 ΒΑΡΒ24· 3g 溶解於 DMAc425g ^於此洛液中，投入PMDA24. 5g進行聚合反應，得到高 #又之熱可塑性聚醯亞胺前驅體溶液B。 〃人將上述所得到之聚酿亞胺前驅體溶液3在 井布表面的表面_匕為〇 之電解鋼 度ί:: t (股)，M_VLP)上以醯亞胺轉化後之薄 曰…、之方式進行桿塗。其後，以乾燥 318853 18 200805528 鐘。然後二於乾燥過之聚釀亞胺層上，如積層之方式，將 聚醯亞胺雨驅體溶液入以醯亞胺轉化後之薄膜厚度會成為 33_之方式進行桿塗，在13〇t下乾燥5分鐘。再^行同 樣之操作，於此薄膜上，將«亞胺前驅體溶液B以醯变 胺轉化後之厚度成為仏之方式進行桿塗，在i3rc下乾 燥5分鐘。然後，將已乾燥之積層體投入於真空恆溫槽中 以20(TC熱處理30分鐘，以3〇〇t熱處理 ，曰 讓理30分鐘，以戰熱處靖 胺層之厚度為40 // m之C0F用積層板。 一 此處，從聚醯亞胺前驅體溶液A所得到之非熱可塑性 聚酿^ A層的30〇i 35〇。〇之熱膨服係數為3〇卿乂。 又，從聚酸亞胺前驅體溶液B所得到之熱可塑性聚酿亞胺 B層的300至35(rc之熱膨脹係數為52ppm/Dc，聚醯亞胺 層全體f玻璃轉移温度為363χ：，熱膨脹係數為38ppm/C。 熱膨脹係數係使用熱機械分析裝置TMA，從300至350 _°C之尺寸變化求出，玻璃轉移溫度係以動態黏彈性進行測 疋，以損失彈性率之峰值作為玻璃轉移溫度。 在所得到之COF用積層板，形成β 〇从m間距的電路圖 案而製成COF薄膜載帶。又，内引腳（inner lead)部分實 施鍍錫。其後，於c〇F薄膜載帶之内引腳部分封裝具有金 凸塊之IC，充填底部填充膠，進行加熱硬化。封裝係使用 復日日接合器（bonder)「TFC-2100」芝浦機械電子學（股） 公司製品，接合頭工具溫度為42(rc，階段溫度為1〇〇艽， 接合壓力為每1凸塊的荷重成為2〇gf而進行。 318853 19 200805528 /，次’藉由以顯微鏡觀察封裝IC《咖薄膜载帶的聚 i亞月女面可確5忍出聚醯亞胺層無波浪狀等變形，於底 填充膠與聚酿亞胺界面無空穴。又，觀察封裝之⑽ 薄膜載帶的截面，就圖2所示之t1_T2==T3 (因封裝所造 :成之樹脂變形量）而言，測定内引腳電路沈入量，確認内 ，3為l.0//m，内引腳與凸塊之連結狀態係 [實施例2] 在1升之分離式燒瓶中使BAPP28」 攪拌一邊溶解於 g/、ipE13々一邊 於入们 MAc425g。其次，將職25. 4g小部份地 = 中，進行聚合反應，得到高黏度之熱可塑性 來鉍亞胺丽驅體溶液C。 驅體:ί A ^只知例1所得到之非熱可塑性聚蕴亞胺前 :-冷攻心、、可塑性聚酿亞胺前驅體溶液C，進行盘實 相同的操作’得到《亞胺層之厚度依C/A/(T之順 。,C層的卿至職之熱膨脹係數為82卿/ 二^亞胺層全體之玻璃轉移溫度為3阶q⑽至綱 ic :::係數為45卿’C。加工成⑽薄膜载帶，封裝 底部埴填充膠之結果，並沒有聚酿亞胺層之變形及 充勝與聚酿亞胺界面之空穴。又，㈣i ，内 [實 、嶋綱_嶋输。 將實施例1所得到之非熱可塑性聚酿亞胺前驅體溶液 318853 20 200805528 A在厚度18#m、塗布表面的表面粗糙度匕為之電 解mi (三井金屬礦山（股）製NA_VLp)上以酸亞胺轉化 後之聚醯亞胺層厚度成為35/zm之方式進行桿塗。其後， 以130 C乾燥5分鐘。然後，於乾燥過之聚醯亞胺層上， ^如積層之方式，將實補2所得敎熱可塑性㈣亞胺前 驅體溶液c以酿亞胺轉化後之聚酸亞胺層厚度成為5" 之方式進行桿塗，在13(rc下乾燥5分鐘。.然後，將已乾 鲁燥之積層體投入於真空恆溫槽中以2〇〇它熱處理3〇分鐘， 。以300°C熱處理30分鐘，以35(rc熱處理3〇分鐘，以37〇 ΐ熱處理ίο分鐘，得到聚醯亞胺層之厚度為4〇_之c〇f 用積層板。 。聚醯亞胺層全體之玻璃轉移溫度為366°C，300至350 c之熱膨脹係數為45ρριη/^，以與實施例^進行同樣操作 而加工成C0F薄膜載帶，封裝I c，充填底部填充膠之結果” 亚沒有聚醯亞胺層之變形及底部填充膠與聚醯亞胺界面之 馨空穴。又，T3為〇· 5/zm，内引腳之密著狀態、内引腳與凸 塊之連接狀態為良好。 [比較例1] 在1升之分離式燒瓶中使BAPP43. 2g —邊攪拌一邊溶 解於 DMAc425g。其次，將 PMDA19· lg 與 BpM4. 5g PMDA24. 5g小部份地投入於此溶液中，進行聚合反應，得 到尚黏度之熱可塑性聚酿亞胺前驅體溶液D。其後，使用 實施例1所得到之非熱可塑性聚醯亞胺前驅體溶液A與熱 可塑性聚醯亞胺前驅體溶液D，進行與實施例丨相同的操 21 318853 200805528 * 作，得到聚醯亞胺層之厚度依D/A/D之順序為5/zm/33以 m/4 # m的40 // m之C0F用積層板。熱可塑性聚醯亞胺D層 的300至350t：之熱膨脹係數為800ppm/°c，聚醯亞胺層全 體之玻璃轉移溫度為323t，300至35(TC之熱膨脹係 ，· 352PPm/°C。加工成C0F薄膜載帶，封裝IC，充填底部填 充膠之結果，聚醯亞胺層大幅波浪狀變形，於底部填充膠 與聚醯亞胺界面產生空穴。又，T3為4//m，内引腳之密著 修狀態為良好，但内引腳與凸塊之連接狀態為不良。山 [比較例2 ] 使用貫施例1所得到之非熱可塑性聚醯亞胺前驅體溶 液A與熱可塑性聚醯亞胺前驅體溶液c，進行與貪施例i 相同的操作，得到聚醯亞胺層之厚度依C/A/C之順序為1〇 #m/20/2m/l〇/am的40//111之c〇F用積層板。聚醯亞胺層 全體之玻璃轉移溫度為367它，3〇〇至35(rc之熱膨脹係9數 為80Ppm/t：。加工成c〇F薄膜載帶，封裝κ，充填底部^ ⑩充膠之結果，聚醯亞胺層呈波浪狀變形，於底部填充膠與 ，酿亞胺界面產生空穴。又，T3為2/zm，内引脚之密著狀 態為良好，但内引腳與凸塊之連接狀態為不良。 [比較例3] 除了將熱可塑性聚醯亞胺前驅體溶液·c變更成D以 外:其餘係進行與實施例3相同的操作，得到聚酿亞胺層 之厚度為40//m之C0F用積層板。聚醯亞胺層全體之玻璃 轉移溫度為322°C，3GG至35(TC之熱膨脹係數為25〇ppm/ c，與實施例1進行相同操作而加工成c〇F薄膜載帶，封 318853 22 200805528 ㈣，内引腳之界面產生空穴。又，T3為Ο』 態為不良。在者狀,％為良好’但内引腳與凸塊之連接狀 / 2中。戶斤计异之Z及其他結果歸納表示於表1及# 2中。又，各聚醯亞胺層之τ““ 、衣1及表 醯亞胺層B.Mcrr \ 聚醯亞胺層A : 371°C，> 305。(：。 C. 365 C及聚醯亞胺層D: 【表1】BpDA 3, 3', 4, 4,-biphenyltetracarboxylic dianhydride DAPE 4, 4'-diaminodiphenyl ether MT 4, 4'-diamino-2, 2'-dimethyl Benzene BAPP 2,2'-bis(4-(4-aminophenoxy)phenyl)propane MPB 4, 4'-bis(4-aminophenoxy)biphenyl TPE 丨, 3-double (4 -Aminophenoxy)benzene DMAe Dimethylacetamide [Example 1] In a 1-liter separable flask, MT28·lg and TPE4·3 g were dissolved in DMAc 425 g while stirring. Next, PMDA25·3g and BPDA8·5g • j. The polymerization was carried out in this solution to obtain a high-viscosity non-thermoplastic polyimine precursor solution A. Similarly, BAPP18·0g and ΒΑΡΒ24·3g were dissolved in DMAc425g^, and PMDA24.5g was charged to carry out a polymerization reaction to obtain a high-temperature thermoplastic polyimine precursor solution B. The sputum obtained the above-mentioned obtained polyamid precursor solution 3 on the surface of the well cloth surface 匕 电解 电解 electrolytic steel degree ί:: t (strand), M_VLP) In the way, the rod is applied. Thereafter, dry 318853 18 200805528 clock. Then, on the dried polyimin layer, such as lamination, the polytheneimide rain-dried solution is converted into a film with a thickness of 33% after the conversion of the quinone imine, at 13 〇. Dry under t for 5 minutes. The same operation was carried out, and the film was applied to the film in such a manner that the thickness of the imine precursor solution B was converted into a hydrazine, and the mixture was dried at i3rc for 5 minutes. Then, the dried laminate is placed in a vacuum thermostat at 20 (TC heat treatment for 30 minutes, heat treatment at 3 〇〇t, 曰 let the treatment for 30 minutes, the thickness of the guanamine layer at the heat of war is 40 // m A laminated plate for C0F. Here, a 30 〇i 35 非 of the non-thermoplastic plastic layer obtained from the polyimide precursor solution A. The thermal expansion coefficient of 〇 is 3 〇 乂. 300 to 35 of the thermoplastic polyacrylonitrile B layer obtained from the polyimide precursor solution B (the thermal expansion coefficient of rc is 52 ppm/Dc, and the glass transition temperature of the entire polyimide layer is 363 χ:, thermal expansion coefficient It is 38ppm/C. The coefficient of thermal expansion is determined by the thermomechanical analysis device TMA, which is obtained from the dimensional change of 300 to 350 _°C. The glass transition temperature is measured by dynamic viscoelasticity, and the peak value of the loss of elastic modulus is used as the glass transition temperature. In the obtained COF laminate, a circuit pattern of β 〇 from m pitch is formed to form a COF film carrier tape. Further, the inner lead portion is plated with tin. Thereafter, the c〇F film is loaded. The pin part of the tape is packaged with an IC with gold bumps, filled with underfill, and Heat-hardening. The package is made of a bonder "TFC-2100" from Shibaura Mechatronics Co., Ltd. The joint head tool temperature is 42 (rc, the stage temperature is 1 〇〇艽, the joint pressure is The load per 1 bump is 2 〇gf. 318853 19 200805528 /, 'By viewing the packaged IC with a microscope, the poly-Asian woman's face of the coffee film carrier can be used to endure the polyimide layer. Wavy and other deformation, no voids at the interface between the underfill and the polystyrene. Also, observe the cross section of the package (10) film carrier, as shown in Figure 2, t1_T2 == T3 (made by the package: resin) In the case of the amount of deformation, the amount of sinking of the inner pin circuit was measured. In the confirmation, 3 was 1.0/m, and the state of the inner pin and the bump was connected. [Example 2] In a 1 liter separable flask BAPP28" was dissolved in g/, ipE13々 while stirring in the MAc425g. Secondly, the second part of the work was 25.4g, and the polymerization was carried out to obtain high-viscosity thermoplasticity. C. Drive: ί A ^ Only the non-thermoplastic polyimine obtained in Example 1: - cold attack, plasticity The imine precursor solution C is subjected to the same operation as the disk. The thickness of the imine layer is obtained according to C/A/(T cis., the thermal expansion coefficient of the C layer is 82 qing / ii imine The glass transition temperature of the whole layer is 3 steps q(10) to ic ::: coefficient is 45 qing 'C. It is processed into (10) film carrier tape, the result of encapsulating the bottom enamel filler, and there is no deformation and victory of the poly-imine layer. The hole at the interface with the poly-imine. Further, (4) i, the inner [real, 嶋 嶋 嶋 。. The non-thermoplastic poly-imine precursor solution obtained in Example 1 318853 20 200805528 A in thickness 18 #m The surface roughness of the coated surface was measured by electrolysis mi (NA_VLp manufactured by Mitsui Mining Co., Ltd.) on the surface of the polyimine layer after the conversion of the acid imine to a thickness of 35/zm. Thereafter, it was dried at 130 C for 5 minutes. Then, on the dried polyimine layer, as in the form of a layer, the thickness of the polyimine layer after the conversion of the ferric (4) imine precursor solution c obtained by the actual addition of 2 is 5" In the manner of rod coating, dry at 13 (rc for 5 minutes.), then put the dried and dried laminate into a vacuum oven to heat it for 3 minutes, heat treatment at 300 ° C for 30 minutes. Heat treatment at 35 rc for 3 minutes, heat treatment at 37 ί for 分钟, to obtain a polythene layer having a thickness of 4 〇 之 c〇f with a laminate. The glass transition temperature of the entire polyimide layer is 366 ° C, 300 to 350 c thermal expansion coefficient of 45ρριη / ^, in the same operation as in Example ^ processed into a C0F film carrier tape, package I c, filled with underfill results. Sub-no polyimine layer The deformation and the sinusoidal cavity at the interface between the underfill and the polyimide. Further, T3 is 〇·5/zm, and the internal pin is in a closed state, and the internal pin and the bump are connected in a good state. 1] BAPP 43.2 g was dissolved in DMAc 425 g while stirring in a 1 liter separable flask. PMDA19· lg and BpM4. 5g PMDA24. 5g was partially introduced into the solution to carry out a polymerization reaction to obtain a thermoplastic viscous polyimide precursor solution D which is still viscous. Thereafter, the non-existence obtained in Example 1 was used. The thermoplastic polyimine precursor solution A and the thermoplastic polyimine precursor solution D were subjected to the same operation as in Example 213 318 853 200805528 *, the thickness of the polyimine layer was obtained according to D/A/D The order is 5/zm/33 with 40/m m of m/4 #m of C0F laminate. The thermoplastic polyimine D layer is 300 to 350t: the thermal expansion coefficient is 800ppm/°c, The glass transition temperature of the entire amine layer is 323t, 300 to 35 (TC thermal expansion system, · 352PPm / ° C. processed into C0F film carrier tape, package IC, filled with underfill, the polyimine layer is greatly wavy Deformation, the hole is generated at the interface between the underfill and the polyimide. Moreover, the T3 is 4//m, and the adhesion state of the inner pin is good, but the connection state of the inner pin and the bump is bad. [Comparative Example 2] The non-thermoplastic polyimine precursor solution A obtained by the application of Example 1 and the thermoplastic resin were used. The polyimine precursor solution c was subjected to the same operation as the herbicide i, and the thickness of the polyimine layer was determined to be 1 〇#m/20/2 m/l〇/am in the order of C/A/C. 40//111 c〇F laminated board. The glass transition temperature of the polyimine layer is 367, 3〇〇 to 35 (the thermal expansion system of rc is 9PP/t:: processed into c〇F film As a result of loading the tape, encapsulating κ, filling the bottom of the ^ 10, the polyimine layer is wavy, and the bottom filling gel and the imide interface generate holes. Further, T3 is 2/zm, and the internal pin is in a good state, but the connection state between the inner pin and the bump is bad. [Comparative Example 3] The same procedure as in Example 3 was carried out except that the thermoplastic polyimine precursor solution·c was changed to D, and a C0F having a thickness of 40/m was obtained. Laminated board. The glass transition temperature of the entire polyimide layer was 322 ° C, 3 GG to 35 (the coefficient of thermal expansion of TC was 25 〇 ppm / c, and processed into a c〇F film carrier tape in the same manner as in Example 1, sealing 318853 22 200805528 (4), the hole at the interface of the inner pin generates holes. Also, the T3 is Ο 』 state is bad. In the case of the shape, the % is good 'but the connection between the inner pin and the bump / 2 in the household. And other results are summarized in Tables 1 and 2. In addition, each of the polyimine layers has a τ "", coat 1 and bismuth imide layer B. Mcrr \ polyimine layer A: 371 ° C, > ; 305. (: C. 365 C and polyimine layer D: [Table 1]
31.8853 200805528 ^【表2】 聚醯亞胺層全體 封裝性 Tg(°C) 熱膨脹係數 (ppm/。。） 產生 空穴 T3 (U m) 連接 可靠 性 實施例1 363 38 益 1· 0 良好 實施例2 367 45 益 1·5 良好 實施)列3 366 45 Μ 0· 5 良好 比較例1 323 352 有 4. 0 不良 較例2 367 80 有 2· 0 不良 3 322 250 ---—---- Li 0· 5 不良 【圖式之簡單說明】 第1圖係C0F用積層板的截面圖。 第2圖係表示將10：晶片封裝於载帶之例的概念圖 【主要元件符號說明】 凸塊 電路 1 1C晶片 2 3、10絕緣層 4 層 Τ1 20 Τ2 11、13熱可塑性聚醯亞胺層 12 非熱可塑性聚酿亞胺 初始厚度 導體 厚度 318853 2431.8853 200805528 ^[Table 2] Polyimide layer overall encapsulation Tg (°C) Thermal expansion coefficient (ppm / .) Generation of holes T3 (U m) Connection reliability Example 1 363 38 Benefit 1 · 0 Good implementation Example 2 367 45 Yi 1·5 Good implementation) Column 3 366 45 Μ 0· 5 Good comparison example 1 323 352 Yes 4. 0 Bad comparison 2 367 80 Yes 2 · 0 Bad 3 322 250 ------- - Li 0· 5 Defective [Simple description of the drawing] Fig. 1 is a cross-sectional view of the laminated plate for C0F. Fig. 2 is a conceptual diagram showing an example in which a 10: wafer is packaged on a carrier tape [Description of main component symbols] bump circuit 1 1C wafer 2 3, 10 insulating layer 4 layer Τ 1 20 Τ 2 11, 13 thermoplastic polyimine Layer 12 non-thermoplastic polystyrene initial thickness conductor thickness 318853 24