TW200805243A - Shift register - Google Patents

Shift register Download PDF

Info

Publication number
TW200805243A
TW200805243A TW96113544A TW96113544A TW200805243A TW 200805243 A TW200805243 A TW 200805243A TW 96113544 A TW96113544 A TW 96113544A TW 96113544 A TW96113544 A TW 96113544A TW 200805243 A TW200805243 A TW 200805243A
Authority
TW
Taiwan
Prior art keywords
shift register
unit
signal
source
transistor
Prior art date
Application number
TW96113544A
Other languages
Chinese (zh)
Other versions
TWI366814B (en
Inventor
Yi-Cheng Tsai
Wen-Chun Wang
Hsi-Rong Han
Chien-Ting Chan
Original Assignee
Wintek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wintek Corp filed Critical Wintek Corp
Priority to US11/822,899 priority Critical patent/US8055695B2/en
Publication of TW200805243A publication Critical patent/TW200805243A/en
Application granted granted Critical
Publication of TWI366814B publication Critical patent/TWI366814B/en

Links

Abstract

A shift register comprises a couple of stage wherein the nth stage comprises first, second and third level control unit and first and second driving unit and n is a nature number. The first and second level control units provide first clock signal and first voltage to an output end respectively. The first driving unit and level control unit are connected at a first node and the voltage on which is first control signal. The first driving unit turns on and turns off the first level control unit in response to an input signal, first and second control signals. The second driving unit turns on and off the second level control unit in response to the first control signal. The third level control unit provides the first voltage to the output end in response to the front edge of the first control signal of the n+20th stage.

Description

200805243rw3165PA , 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種移位暫存器(Shift Register),且特 別是有關於一種以第n+l級或第n+2級移位暫存器單元之 特定電壓訊號來控制第η級移位暫存器單元操作之移位 存器。 【先前技術】200805243rw3165PA, IX. Description of the Invention: [Technical Field] The present invention relates to a Shift Register, and in particular to a shift of the n+1th stage or the n+2th stage The specific voltage signal of the register unit controls the shift register of the n-th stage shift register unit operation. [Prior Art]

在科技發展曰新月異的現今時代中,液晶顯示器已铖 廣泛地應用在電子顯示產品上,如電視、電腦螢幕、筆^ ^電腦、行動電話或個人數位助理#。液晶顯示器係包括 育料驅動器(Data Ddver)、掃瞄驅動器⑼时及液晶 顯示面板’其中液晶顯示面板中具有晝素陣列,而掃瞎= 動器用以依序開啟晝素陣列中對應之晝素列,以將驅 :器輸出之晝素資料掃猫至晝素,進而顯示出欲顯示之影 像0 現今之技術多以移位暫存器(Shift㈣叫來實現 I依序開啟晝素陣列中對應之晝素列的掃聪驅動器。由於 掃聪驅動器對液晶顯示器之顯示晝面品質影響甚矩,因此 如何設計出使財命長及輪出訊號失真輕微之移位暫存 ::提升掃瞎驅動器之效能與液晶顯示 質乃業界所致力之方向之一。一 "轉零In the current era of rapid technological development, liquid crystal displays have been widely used in electronic display products such as televisions, computer screens, pen computers, mobile phones or personal digital assistants. The liquid crystal display system includes a material Ddver, a scan driver (9), and a liquid crystal display panel, wherein the liquid crystal display panel has a pixel array, and the broom = actuator is used to sequentially open the corresponding pixel in the pixel array. Column, in order to sweep the output of the halogen data to the cat, to display the image to be displayed. 0 Today's technology is more to shift register (Shift (four) called to achieve the corresponding sequence in the pixel array扫 昼 的 的 的 。 。 。 。 。 。 。 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 昼 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于The performance and liquid crystal display quality is one of the directions that the industry is working for. One"

"轉零 rW3165PA 200805243 【發明内容】 本發明係有關於一種移位暫存器(Shift R邙 其中各級移位暫存器單元具有使用壽命長、輸出訊號"失直 輕微之優點,而期此移位暫存器之液晶顯示器 晝面品質較佳之優點。 .'、、、示 根據本發明提出一種移位暫存器,具有 連接之移位暫存器單元,其中第,級移位暫;、⑶ 輸出訊號,其為第!1+1級移位暫存器單元之輸入訊號=出 為自然數。第η級移位暫存器單元包括第一、第二及"#1^ 位準控制單元及第一、第二控制單元。第一位準控制 用以提供第-時序訊號至輸出端。第一驅動單元與第70 準控制單元之輸人端偶接於第—節點,第—節點^電壓= 第-控制訊號。第-軸單元用㈣應於輪人訊號之前缝 pront Edf)導通第一位準控制單元,並用以於第二控制訊 ,之位準高於第三控龍號之位準時關第—位準控制° 早το。第二位準控制單元用以提供第一電壓至輸出端。第 二驅動單元用以回應於第一控制訊號之前緣關閉第二位 準控制單元,細應於第—㈣訊號之後R g 導通第二解_單元。第三位準控制單元用以回應3 n+2級移位暫存器單元之第—控制訊號之前緣第一 電壓至輸出端。 八 根據本發明提出另一種移位暫存器,具有多級彼此串 聯連接之移位暫存器單元,其巾第η級移位暫存ϋ單元输 出輪出訊號’其為第n+1級移位暫存器單元之輪入訊號,"turning to zero rW3165PA 200805243 [Description of the Invention] The present invention relates to a shift register (Shift R 邙 wherein each stage of the shift register unit has the advantages of long service life, output signal " The advantage of the quality of the liquid crystal display of the shift register is better. [,,, according to the present invention, a shift register is provided, which has a connected shift register unit, wherein the first stage shift Transmitting;, (3) output signal, which is the input signal of the !1+1 shift register unit = the natural number. The nth shift register unit includes the first, second, and "#1 The level control unit and the first and second control units. The first level control is used to provide the first timing signal to the output end. The first driving unit and the input end of the 70th quasi control unit are coupled to the first node. , the first node voltage = the first control signal. The first axis unit (4) should be used to sew the first level control unit before the wheel signal, and used for the second control signal, the level is higher than the first The position of the three-control dragon is on time - the level control - early το. The second level control unit is configured to provide the first voltage to the output. The second driving unit is configured to close the second level control unit in response to the leading edge of the first control signal, and align the second solution unit after the first (four) signal. The third level control unit is configured to respond to the first voltage of the first control signal of the 3 n+2 stage shift register unit to the output end. According to the present invention, another shift register is provided, which has a plurality of shift register units connected in series with each other, and the n-th shift of the towel is temporarily stored in the unit output round-out signal, which is the n+1th level. Shift register signal to the scratchpad unit,

TW3165PA 200805243 n為自然數。第n級移位暫存器單元包括〜 三位準控制單元及第一、第二驅動單元 、弟一及第 控制單元分別用以提供第—時序訊號及第:準 第一位準控制單元之輪入_於第 一即點’其之電壓為-第—控制訊號。第—驅動單元用= 回應於輸人訊號之翁導通第—位準控解元, ^工,早%弟一驅動單疋用以回應於第一控制訊號 之前緣關第二位準控解元,如應於第—㈣訊號之 後緣來導通p位準控制單元。第三位準控制單元用以回 應於第n+l級移位暫存器單元之第—控制訊號來提供第一 時序訊號之低電壓位準至輪出端。 根據本發明提出再一種移位暫存器,具有多級彼此串 聯連接之移位暫存器單元,其中第n級移位暫存 器單元輸 出輸出訊號,其為第n+1級移位暫存器單元之輸入訊號, η為自然數。第η級移位暫存器單元包括第一、第二位準 控制單元及第一、第二驅動單元。第一及第二位準控制單 元係分別用以提供第一時序訊號及第一電壓至輸出端。第 一驅動單元與第一位準控制單元之輸入端偶接於第一節 點,其之電壓為第一控制訊號。第一驅動單元用以回應於 輸入訊號之前緣導通第一位準控制單元,並用以回應於第 η+2級移位暫存器單元之第一控制訊號之前緣來關閉第一 位準控制單元。第二驅動單元用以回應於第一控制訊號之 前緣關閉第二位準控制單元,並回應於第一控制訊號之後TW3165PA 200805243 n is a natural number. The nth stage shift register unit comprises: a three-position quasi-control unit, and the first and second driving units, the first one and the second control unit respectively for providing the first timing signal and the first: the first first level control unit Turn in _ at the first point, the voltage is - the first control signal. The first-drive unit uses = in response to the input signal, the first-level control solution, the work, the early% of the driver's drive unit is used to respond to the first control signal before the second-level quasi-control solution If p-level control unit is to be turned on at the trailing edge of the (-)th signal. The third level control unit is configured to respond to the first control signal of the n+1th stage shift register unit to provide the low voltage level of the first timing signal to the wheel output. According to the present invention, a shift register is provided, which has a plurality of shift register units connected in series with each other, wherein the nth stage shift register unit outputs an output signal, which is the n+1th shift. The input signal of the memory unit, η is a natural number. The nth stage shift register unit includes first and second level control units and first and second driving units. The first and second level control units are respectively configured to provide the first timing signal and the first voltage to the output. The first driving unit and the input end of the first level control unit are coupled to the first node, and the voltage is the first control signal. The first driving unit is configured to turn on the first level control unit in response to the leading edge of the input signal, and to close the first level control unit in response to the leading edge of the first control signal of the n+2th stage shift register unit . The second driving unit is configured to close the second level control unit in response to the leading edge of the first control signal, and respond to the first control signal

:W3165PA 200805243 • 緣來導通第二位準控制單元。 根據本發明提出再一種移位暫存器,具有多級彼此串 聯連接之移位暫存器單元,其中第η級移位暫存器單元輸 出之輸出訊號,其為第η+1級移位暫存器單元之輸入訊 號’ η為自然數。第η級移位暫存器單元包括第一、第二 位準控制單元及第一、第二驅動單元。第一及第二位準控 制單元係分別用以提供第一時序訊號及第一電壓至輸出 端。第一驅動單元與第一位準控制單元之輸入端偶接於第 • 一節點,其之電壓為第一控制訊號。第一驅動單元用以回 應於輸入§fl5虎之前緣導通第一位準控制早元’並用以回應 於第n+1級移位暫存器單元之第一控制訊號之驅動緣 (Triggering Edge)來關閉第一位準控制單元。第二驅動單元 用以回應於第一控制訊號之前緣關閉第二位準控制單 元,並回應於第一控制訊號之後緣來導通二位準控制單 元0 為讓本發明之上述内容能更明顯易懂,下文特舉一較 佳實施例,並配合所附圖式,作詳細說明如下: 【實施方式】 第一實施例 本實施例之移位暫存器具有m級相等且彼此串聯連 接之移位暫存器單元,各級移位暫存器單元輸出之輸出訊 號係為其之下一級移位暫存器單元之輪入訊號。移位暫存 器例如應用於液晶顯示器之掃猫驅動器(Scan Driver)中,:W3165PA 200805243 • The edge is used to turn on the second level control unit. According to the present invention, another shift register is provided, which has a plurality of shift register units connected in series with each other, wherein the output signal outputted by the nth stage shift register unit is the n+1th shift. The input signal 'η of the register unit is a natural number. The nth stage shift register unit includes first and second level control units and first and second driving units. The first and second level control units are respectively configured to provide the first timing signal and the first voltage to the output. The first driving unit and the input end of the first level control unit are coupled to the first node, and the voltage is the first control signal. The first driving unit is configured to respond to the input of the §fl5 tiger leading edge first level control early element ' and is used to respond to the driving edge of the first control signal of the n+1th stage shift register unit (Triggering Edge) To close the first level control unit. The second driving unit is configured to turn off the second level control unit in response to the leading edge of the first control signal, and turn on the two level control unit 0 in response to the trailing edge of the first control signal to make the above content of the present invention more obvious. It is to be noted that a preferred embodiment is described below in detail with reference to the accompanying drawings, and is described in detail below: [Embodiment] The first embodiment of the shift register of the present embodiment has m levels equal and connected in series with each other. The bit register unit, the output signal outputted by the shift register unit of each stage is the round signal of the lower stage shift register unit. The shift register is applied, for example, to a Scan Driver of a liquid crystal display.

rW3165PA 200805243 其用以依序地輪出輪出訊號 號。_訊號係輪出至液晶顯示=,,_訊 依序地開啟液晶顯+ 由+时之液日日顯示面板中,以 寫入各書辛中。m : m列晝素,來將對應之資料 馬旦畜T m為大於1之自然數。 本實施例之第n妨 單元、第-驅動::級單元包括第-位準控制 及第三位準㈣單元。第立2制早70、第二驅動單元 序訊號至輸出端制單元用以提供第一時 入魏炷u 1動早70與第一位準控制單元之輸 覃1 π庙即點,其之電壓為第一控制訊號。第一驅動 準於輪人訊號之前緣(Fr_ Edge)導通第-位 =制早兀於第二控制訊號之位準高於第三控制 訊號=位料_第—料鋪單元。 第一位準匕制單元用以提供第-電壓至輸出端。第二 驅動單元用以回庫於笙 ^ 、,應於弟一控制訊號之前緣關閉第二位準 拴,單70,並回應於第一控制訊號之後緣弘)來導 通第一位準控制單元。而第三位準控制單元用以回應於第 ^級移位暫存11單元之第-㈣訊號之前緣來提供第-電壓至輸出端。n為自然數。接下來,列舉多個實施結構 來對第η級移位暫存器單元之操作詳細說明之。 第一實施結構 请參照第1圖,其繪示依照本發明第一實施例之第一 實施結構之移位暫存器的方塊圖。移位暫存器1〇〇包括m 個彼此串聯連接之移位暫存器單元而其例如rW3165PA 200805243 It is used to sequentially rotate out the signal. _ Signal system is turned to LCD display =,, _ News Start liquid crystal display + by + liquid in the day display panel to write to each book. m : m 昼 昼 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The nth unit of the embodiment, the first drive: the level unit includes a first level control and a third level (four) unit. The first phase 2 system early 70, the second driving unit sequence signal to the output terminal unit is used to provide the first time into the Wei Wei u 1 moving early 70 and the first level control unit of the input 1 π temple point, which The voltage is the first control signal. The first drive is ahead of the front of the wheel signal (Fr_Edge). The first position = the level of the second control signal is higher than the third control signal = bit material_first-stitch unit. The first quasi-tanning unit is used to provide the first voltage to the output. The second driving unit is configured to return to the first level control unit by closing the second position register, the single unit 70, and responding to the first control signal after the first control signal is turned on. . The third level control unit is configured to provide the first voltage to the output end in response to the leading edge of the fourth (fourth) signal of the first stage shift temporary storage unit. n is a natural number. Next, a plurality of implementation structures will be described in detail for the operation of the n-th stage shift register unit. First Embodiment FIG. 1 is a block diagram showing a shift register in accordance with a first embodiment of the first embodiment of the present invention. The shift register 1 includes m shift register units connected in series to each other, for example

200805243TW3165PA • 具有相等之結構。在本實施例中,移位暫存器單元 S(l)〜S(m)包括輸入端、輸出端out、控制端RT、節點 P1、時序端c與時序端CB。移位暫存器單元s(1)〜s(m) 根據輸入端IN、控制端RT、時序端c與時序端cb之訊 號來使輸出端OUT各別輸出輸出訊號v〇(l)〜Vo(m)。 移位暫存器單元S(l)之輸入端IN接收起始訊號 STV,而移位暫存器單元s(2)〜s(m)之輸入端取依序接收 前一級移位暫存器之輸出端OUT所輸出之輸出訊號 • ν〇(1)〜Vo(m-l) 〇 移位暫存裔單元S(l)〜S(m)中任兩相鄰之時序端c接 收之時序訊號之致能時間係相互錯開,而時序端CB接收 之日守序訊號之致能時間亦相互錯開,而第η級移位暫存器 單元S(n)之時序端CB與第η+1級移位暫存器單元s(n+l) 之時序端C接收之時序訊號之致能時間亦相互錯開。在本 實施例中,係以移位暫存器單元S(1)〜s(m)中奇數級移位 暫存器單元之時序端C與CB分別接收時序訊號CLK與 • CLKB ’而其中偶數級移位暫存器單元之時序端c與CB 分別接收時序訊號CLKB與CLK為例作說明。在本實施 例中’時序訊號CLKB之致能時間與時序訊號CLK之致 能時間例如為錯開(在本實施例中時序訊號CLKB與時序 訊號CLK為反相訊號)。 移位暫存器單元S( 1)〜S(m_2)之控制端RT分別接收移 位暫存器單元S(3)〜S(m)之P1節點之電壓訊號以做為控制 訊號Vcl(3)〜Vcl(m)。接下來,以移位暫存器單元s(l)〜S(m) - Γ.. -- -- — … _ 11 2008〇ϋ3,3娜 中第n級移位暫存器單元S(n)為例來列舉本實施例之移位 暫存器單元S(n)之多種電路實施方式作說明,n為自然數。 請參照弟2圖’其纟會示乃第1圖之移位暫存器單元g(n) 之弟一電路貫把方式的焊細電路圖。本實施之移位暫存哭 單元S(n)之包括驅動單元202a、202b及位準控制單元 204a、204b及204c。驅動單元202a包括電晶體ΤΙ、T3 及T8,驅動單元202b包括電晶體T4及T5,位準控制單 _ 元204a、204b及204c係分別包括電晶體T2、T7及T6。 本實施結構以電晶體T1〜T8均為N型薄膜電晶體(Thin Film Transistor,TFT)為例作說明。 位準控制單元204c之電晶體T6的汲極①⑹!!)耦接至 輸出端OUT,閘極(Gate)接收第η+2級移位暫存器單元 S(n+2)之控制訊號Vcl(n+2),源極(Source)接收電壓VSS。 電壓VSS之位準例如等於移位暫存器ι00之低電壓位準。 電晶體T6用以回應於控制訊號vcl(n+2)之前緣導通,來 ⑩提供電壓位準VSS至輸出端OUT,使輸出訊號V〇(n)等於 電壓VSS。本實施例控制訊號vci(n+2)之前緣例如為上升 緣(Rising Edge) 〇 位準控制單元2〇4a之電晶體T2的汲極接收時序訊號 CLK,閘極與電晶體Τ1之源極和電晶體Τ3之汲極耦接於 節點P1以接收控制訊號Vcl(n),源極耦接至輸出端OUT。 電晶體T2用以於導通時提供時序訊號clk之高電壓位準 至輸出端OUT 〇 12 - 一 ’ — t ·200805243TW3165PA • Has an equal structure. In this embodiment, the shift register units S(1) to S(m) include an input terminal, an output terminal out, a control terminal RT, a node P1, a timing terminal c, and a timing terminal CB. The shift register unit s(1)~s(m) causes the output terminal OUT to output the output signals v〇(l)~Vo according to the signals of the input terminal IN, the control terminal RT, the timing terminal c and the timing terminal cb. (m). The input terminal IN of the shift register unit S(1) receives the start signal STV, and the input terminals of the shift register unit s(2)~s(m) receive the previous stage shift register sequentially. Output signal outputted by the output terminal OUT • ν〇(1)~Vo(ml) 〇 Shift timing signal received by any two adjacent timing terminals c in the temporary storage unit S(l)~S(m) The enabling time is staggered from each other, and the enabling time of the sequence signal received by the timing terminal CB is also shifted from each other, and the timing end CB and the n+1th shift of the nth stage shift register unit S(n) are shifted. The enable time of the timing signals received by the timing terminal C of the bit register unit s(n+l) is also shifted from each other. In this embodiment, the timing terminals C and CB of the odd-numbered shift register units in the shift register units S(1) to s(m) receive the timing signals CLK and CLKB', respectively. The timing terminals c and CB of the stage shift register unit receive the timing signals CLKB and CLK, respectively, as an example. In this embodiment, the enable time of the timing signal CLKB and the enable time of the timing signal CLK are, for example, staggered (in the present embodiment, the timing signal CLKB and the timing signal CLK are inverted signals). The control terminal RT of the shift register unit S(1)~S(m_2) receives the voltage signal of the P1 node of the shift register unit S(3)~S(m) as the control signal Vcl(3), respectively. ) ~Vcl(m). Next, the shift register unit s(l)~S(m) - Γ.. -- -- -- ... _ 11 2008〇ϋ3, 3na the nth stage shift register unit S(n As an example, a plurality of circuit embodiments of the shift register unit S(n) of the present embodiment will be described, and n is a natural number. Please refer to the figure of the second figure, which is a soldering circuit diagram of the circuit-input method of the shift register unit g(n) of Fig. 1. The shift temporary storage crying unit S(n) of the present embodiment includes drive units 202a, 202b and level control units 204a, 204b, and 204c. The driving unit 202a includes transistors ΤΙ, T3 and T8, and the driving unit 202b includes transistors T4 and T5, and the level control units 204a, 204b and 204c respectively include transistors T2, T7 and T6. In the present embodiment, an example in which the transistors T1 to T8 are N-type thin film transistors (TFTs) will be described. The gate 1 (6) of the transistor T6 of the level control unit 204c is coupled to the output terminal OUT, and the gate receives the control signal Vcl of the n+2th stage shift register unit S(n+2). (n+2), the source receives the voltage VSS. The level of the voltage VSS is, for example, equal to the low voltage level of the shift register ι00. The transistor T6 is configured to provide a voltage level VSS to the output terminal OUT in response to the leading edge of the control signal vcl(n+2), so that the output signal V〇(n) is equal to the voltage VSS. In the present embodiment, the leading edge of the control signal vci(n+2) is, for example, a rising edge (Rising Edge), the drain receiving timing signal CLK of the transistor T2 of the level control unit 2〇4a, and the source of the gate and the transistor Τ1. The drain of the transistor Τ3 is coupled to the node P1 to receive the control signal Vcl(n), and the source is coupled to the output terminal OUT. The transistor T2 is used to provide a high voltage level of the timing signal clk to the output terminal OUT 〇 12 - a '- t when turned on.

t · rW3165PA 200805243t · rW3165PA 200805243

驅動單元2 0 2 a之電晶體T i的汲極接收電壓v d d,間 ,接收第n-i、级移位暫存器單& s㈣之輸出訊號 ν〇(η-ι) ’源極耦接至節點P1。其中電壓vdd之位準例如 為移位暫存器爾之高電壓位準。電晶體以用以回應於 輸出訊號VcXn-D之前緣來導通電晶體T2,使輸出訊號 V。⑻等於電壓VSS。本實施例輸出訊號㈣叫之前緣例 如為上升緣。電晶體T3之祕純至節點ρι,閘極接收 時序訊號CLKB,源極接收電壓v〇(lM)。電晶體τ3用以 回應於時序訊號CLKB之上升緣來關閉電晶體Τ2。電晶 體Τ8之汲極耦接至節點ρ〗’閘極耦接至節點ρ2,以接收 控制訊號Vc2(n)’源極接收電壓vss。電晶體丁8用以回 應於控制汛號Vc2(n)之上升緣提供電麗vss至節點。 位準控制單元204b之電晶體仞的汲極耦接至輸出端 OUT,閘極(Gate)與電晶體T4之源極和電晶體T5之汲極 搞接於節點Ρ2以接收控制訊號vC2(n),源極接收電壓 VSS。電晶體丁7用以於導通時提供電壓vss至輸出端 OUT 〇 驅動單元202b之電晶體T4之汲極及閘極相互耦接以 接收電壓VDD,源極耦接至節點P2。電晶體T4用以持續 地導通電晶體T7,以使輸出訊號v〇(n)等於電壓VSS。電 晶體T5之汲極輕接至節點P2,閘極接收控制訊號 Vcl(n) ’源極接收電壓VSS。電晶體T5用以回應於控制 訊號Vcl(n)之前緣來關閉電晶體T7。控制訊號Vcl(n)之 前緣例如為上升緣。在本實施結構中,電晶體T5之長寬 13 200805243The drain receiving voltage vdd of the transistor T i of the driving unit 2 0 2 a is received, and the output signal ν〇(η-ι) of the first and second shift register registers is outputted to the source signal ν〇(η-ι) Node P1. The level of the voltage vdd is, for example, the high voltage level of the shift register. The transistor is used to conduct the transistor T2 in response to the leading edge of the output signal VcXn-D to output the signal V. (8) is equal to the voltage VSS. In the present embodiment, the output signal (4) is called the rising edge. The secret of transistor T3 is pure to node ρι, the gate receives timing signal CLKB, and the source receives voltage v〇(lM). The transistor τ3 is used to turn off the transistor 回应2 in response to the rising edge of the timing signal CLKB. The gate of the transistor Τ8 is coupled to the node ρ′′ and the gate is coupled to the node ρ2 to receive the source receiving voltage vss of the control signal Vc2(n). The transistor D is used to provide a voltage vs. node to the rising edge of the control nickname Vc2(n). The gate of the transistor 位 of the level control unit 204b is coupled to the output terminal OUT, and the gate of the gate and the source of the transistor T4 and the diode of the transistor T5 are connected to the node Ρ2 to receive the control signal vC2(n). ), the source receives the voltage VSS. The transistor 7 is used to provide a voltage vss to the output terminal OUT when turned on. The drain and gate of the transistor T4 of the driving unit 202b are coupled to each other to receive the voltage VDD, and the source is coupled to the node P2. The transistor T4 is used to continuously conduct the transistor T7 such that the output signal v 〇 (n) is equal to the voltage VSS. The drain of the transistor T5 is lightly connected to the node P2, and the gate receives the control signal Vcl(n) ' source receiving voltage VSS. The transistor T5 is used to turn off the transistor T7 in response to the leading edge of the control signal Vcl(n). The leading edge of the control signal Vcl(n) is, for example, a rising edge. In the present embodiment, the length and width of the transistor T5 13 200805243

TW3165PATW3165PA

• 比(Width/Length)例如大於電晶體T4之長寬比。如此,當 電晶體T5導通時,電晶體T5可使控制訊號Vc2(n)之位準 實質上等於低電壓VSS,以關閉電晶體T7。電晶體T4及 丁5例如為偏壓單元302,用以回應於控制訊號Vcl(n)之前 緣來拉低控制訊號Vc2(n)之位準以關閉電晶體T7,並回 應於控制訊號Vcl(n)之後緣來提升控制訊號Vc2(n)之位 準以導通電晶體T7〇 請參照第3圖,其繪示乃第2圖中移位暫存器單元s(n) • 的相關訊號時序圖。於時間週期TP1中輸出訊號V〇(n-i) 等於電壓VDD,時序訊號CLK及控制訊號vci(n+2)等於 電壓VSS。此時電晶體T6為關閉,電晶體T1導通並使電 晶體T2導通,使輸出訊號Vo(n)等於時序訊號CLK,亦即 電壓VSS。而電晶體T1更使控制訊號Vcl(n)等於高電壓 位準:Vcl⑻=VDD-VtM。其中Vthl為電晶體T1之臨,界 電壓。電晶體T3亦為導通,其之臨界電壓例如等於電晶 體T1之臨界電壓’電晶體T3和電晶體T1使控制訊號 馨 Vcl(n)上升至VDD-Vthl。而電晶體T5亦為導通,以控制 訊號Vc2(n)接近電壓VSS而關閉電晶體T7及T8。 於時間週期TP2中輸出訊號Vo(n-l)、時序訊號CLKB 及控制訊號Vcl(n+2)等於電壓VSS,時序訊號CLK等於 電壓VDD。此時電晶體T6、T1及T3關閉,使節點pi為 浮接(Floating)。時序訊號CLK於時間週期TP2中由電壓 VSS提升等於電壓VDD,此巨幅之電壓變化將使電壓訊號 Vc 1 (η)因推升效應(Boot-Strapping)而進一步提升一個差值 r # J"· f• The ratio (Width/Length) is, for example, larger than the aspect ratio of the transistor T4. Thus, when the transistor T5 is turned on, the transistor T5 can make the level of the control signal Vc2(n) substantially equal to the low voltage VSS to turn off the transistor T7. The transistors T4 and D5 are, for example, biasing units 302 for lowering the level of the control signal Vc2(n) in response to the leading edge of the control signal Vcl(n) to turn off the transistor T7 and respond to the control signal Vcl ( n) The trailing edge is used to raise the level of the control signal Vc2(n) to conduct the transistor T7. Please refer to FIG. 3, which shows the timing sequence of the shift register unit s(n) in FIG. Figure. In the time period TP1, the output signal V〇(n-i) is equal to the voltage VDD, and the timing signal CLK and the control signal vci(n+2) are equal to the voltage VSS. At this time, the transistor T6 is turned off, the transistor T1 is turned on and the transistor T2 is turned on, so that the output signal Vo(n) is equal to the timing signal CLK, that is, the voltage VSS. The transistor T1 further causes the control signal Vcl(n) to be equal to the high voltage level: Vcl(8) = VDD - VtM. Where Vthl is the junction of the transistor T1 and the boundary voltage. The transistor T3 is also turned on, and its threshold voltage is, for example, equal to the threshold voltage of the transistor T1. The transistor T3 and the transistor T1 raise the control signal Vcl(n) to VDD-Vth1. The transistor T5 is also turned on to turn off the transistors T7 and T8 by controlling the signal Vc2(n) to approach the voltage VSS. In the time period TP2, the output signal Vo(n-1), the timing signal CLKB and the control signal Vcl(n+2) are equal to the voltage VSS, and the timing signal CLK is equal to the voltage VDD. At this time, the transistors T6, T1, and T3 are turned off, so that the node pi is floating. The timing signal CLK is boosted by the voltage VSS equal to the voltage VDD during the time period TP2. This huge voltage change causes the voltage signal Vc 1 (η) to further increase a difference r # J" due to the push-strapping effect. · f

r # J"· f :W3165PA 200805243 -/*cc/i7rrojtvu .電壓Δν,使電壓訊號Vcl⑻等於Vcl⑻^VDD-Vthl + Δ V。在本實施結構中,差值電壓Δ ν等於: △卜(聽,其中Cgs為電晶體T2之内部寄生電 容,而Cpl為節點pi看到之等效電容。此時電壓訊號vci⑻ 致能電晶體T2,使輸出訊號Vo(n)快速充電至電壓VDD。 電晶體T5亦為導通,以使控制訊號vc2(n)接近低電壓 VSS,以關閉電晶體T7。 於時間週期TP3中,時序訊號CLKB及控制訊號 • Vcl(n+2)均為高位準,輸出訊號Vo(n-l)等於電壓VSS。此 時電晶體T6為導通,以提供電壓vss至輸出端OUT來使 輸出訊號Vo(n)等於電壓VSS。電晶體T1為關閉而電晶體 T3為導通,以使控制訊號Vcl(n)等於電壓VSS,並關閉 電晶體T2。電晶體T5為關閉,此時電晶體T4係提升控 制訊號Vc2(n)之位準等於電壓VDD-Vth。電晶體T7及T8 均為導通,以分別提供電壓VSS至輸出端QUT及節點: P1,以使輸出訊號Vo(n)及控制訊號Vcl(n)等於電壓VSS。 ⑩ 其中自時間週期TP3起到下一個時間週期τρι之前控 制訊號Vc2(n)係持續地等於電壓VDD_Vth。電晶體T7係 持續地士通以持績地將使輸出訊號v〇(n)等於電壓vss, 以避免其受到其他寄生電容產生之雜訊干擾,而造成液晶 顯示器之掃瞄動作發生錯誤導致顯示晝面錯誤。然而,長 時間導通將使得電晶體T7之臨界電壓因應力效應(&代% Effect)而誕升,進而無法提供電壓V%至輸出端QUT之 功月b ’使付移位暫存為1〇〇產生誤動作(Maifuncti〇n)。因 15r # J"· f : W3165PA 200805243 -/*cc/i7rrojtvu . Voltage Δν, so that the voltage signal Vcl(8) is equal to Vcl(8)^VDD-Vthl + ΔV. In the present embodiment, the difference voltage Δ ν is equal to: Δ (listening, where Cgs is the internal parasitic capacitance of the transistor T2, and Cpl is the equivalent capacitance seen by the node pi. At this time, the voltage signal vci(8) enables the transistor T2, the output signal Vo(n) is quickly charged to the voltage VDD. The transistor T5 is also turned on, so that the control signal vc2(n) is close to the low voltage VSS to turn off the transistor T7. In the time period TP3, the timing signal CLKB And the control signal • Vcl(n+2) is high level, the output signal Vo(nl) is equal to the voltage VSS. At this time, the transistor T6 is turned on to supply the voltage vss to the output terminal OUT to make the output signal Vo(n) equal Voltage VSS. The transistor T1 is turned off and the transistor T3 is turned on, so that the control signal Vcl(n) is equal to the voltage VSS, and the transistor T2 is turned off. The transistor T5 is turned off, and the transistor T4 is boosted by the control signal Vc2 ( The level of n) is equal to the voltage VDD-Vth. The transistors T7 and T8 are both turned on to supply the voltage VSS to the output terminal QUT and the node: P1, respectively, so that the output signal Vo(n) and the control signal Vcl(n) are equal to Voltage VSS. 10 where from time period TP3 to the next time period τρι The signal signal Vc2(n) is continuously equal to the voltage VDD_Vth. The transistor T7 continuously keeps the output signal v〇(n) equal to the voltage vss to avoid noise interference caused by other parasitic capacitances. However, the scanning operation of the liquid crystal display causes an error in the display surface. However, the long-time conduction causes the threshold voltage of the transistor T7 to rise due to the stress effect (&% effect), thereby failing to supply the voltage V%. The power month b ' to the output terminal Q' causes the pay shift to be temporarily stored as 1 〇〇 to cause a malfunction (Maifuncti〇n).

200805243 TW3165PA 而本實施方式之移位暫存器早元S(n)係設置電晶體,以 彌補於電晶體Τ7因Sa界電壓提升而逐漸操作異常時,帝 壓訊號Vcl(n+2)可協助將輸出訊號Vo(n)拉低至低電壓 VSS。如此既使電晶體T7操作異常,本實施方式之移位暫 存器單元S(n)可使輸出訊號Vo(n)之訊號位準較不易發生 錯誤。 本實施方式之第η級移位暫存器單元係經由其本身之 電路設計來產生控制訊號,並經由此控制訊號來對其本身 • 之電路及第η+2級移位暫存器單元之操作進行控制。如 此’本貫施方式之第η級移位暫存器單元係不使用其之輸 出訊號來對其本身或其他級移位暫存器單元之電路操作& 進行控制。如此,本實施例架構之第η級移位暫存哭單元 及應用其之掃瞄驅動器具有輸出訊號延遲時間較輕微之 優點,而且應用本實施方式之第η級移位暫存器單元之液 晶顯示器、更具有顯示畫面之品質較佳之優點。 另外,本實施方式之第η級移位暫存器單元係設置兩 _ 個用以拉低輸出訊號位準之位準控制單元。當其中之_個 位準控制單元因長時間導通而受到因應力效應之影響而 遂漸操作異常時,本實施方式之第η級移位暫存器單元係 可經由另一位準控制單元來協助拉低輸出訊號,使其等於 隶低電壓值準。如使,本實施方式之第η級移位暫存器單 元可使輪出訊號之位準較不易因其中之位準控制單元操 作異常而錯誤,而具有使用壽命較長之優點。200805243 TW3165PA The shift register of the present embodiment is provided with a transistor in the early element S(n) to compensate for the abnormal operation of the transistor Τ7 due to the voltage increase of the Sa boundary, and the voltage signal Vcl(n+2) can be used. Helps to pull the output signal Vo(n) low to low voltage VSS. Thus, even if the transistor T7 is operated abnormally, the shift register unit S(n) of the present embodiment can make the signal level of the output signal Vo(n) less susceptible to errors. The n-th stage shift register unit of the embodiment generates a control signal via its own circuit design, and uses the control signal to control its own circuit and the n+2 stage shift register unit. Operation is controlled. Thus, the nth stage shift register unit of the present embodiment does not use its output signal to control the circuit operation & itself or other stage shift register unit. In this way, the n-th stage shift temporary storage crying unit and the scan driver using the same have the advantages that the output signal delay time is relatively slight, and the liquid crystal of the n-th stage shift register unit of the embodiment is applied. The display has the advantages of better quality of the display screen. In addition, the nth stage shift register unit of the embodiment is provided with two level control units for lowering the output signal level. When the one of the level control units is subjected to the abnormal operation due to the stress effect due to the long-time conduction, the n-th stage shift register unit of the present embodiment may be via another level control unit. Help to pull down the output signal to equal the low voltage value. For example, the n-th stage shift register unit of the present embodiment can make the level of the round-out signal less likely to be wrong due to abnormal operation of the level control unit, and has the advantage of long service life.

rW3165PA 200805243 明麥妝第4圖’其繪示乃第丨圖之移位暫存器單元s(n) 之第二電路實施方式的詳細電路圖。本實施方式之第η級 移位暫存$單元s(n)與第2圖之第η級移位暫存器單元s(n) 不同之處在於驅動單元2〇2a中電晶體T3改為電晶體Μ 之接線方式。 電晶體T9之沒極麵接至節點ρι,閘極接收控制訊號 VCl(n+2)’源極接收電壓VSS。電晶體T9用以回應於控 制況號Vcl(n+2)之上升、緣,來提供電廢vss至節點, 使控制§fl號Vcl(n)等於電壓vss。 …在時序週期TP1及TP2中,控制訊號Vcl(n+2)等於 電C VSS ’此#電晶體Ts>均為關。在時序週期TP3中, 控訊號Ve 1 (η+2)等於電壓卿_ vth,以導通電晶體Τ9, 3供電壓VSS至節點Ρ卜使電壓訊號Vcl⑻等 VSS ’以關閉電晶體T2。 ^ 本貫施方式之第η級移位暫存器單元s⑻以電晶體扔 :::電晶體T3 ’然而,其與電晶體以有實質上相近 ίΙΓ 施方式之第n級移位暫存器單元亦具 Ά—負載較低及使用壽命較長之優點’而應用本實施方 式之弟η級移位暫存5§置;#、六曰 _ u 、 之品質較佳之優點早疋之液明顯不^具有顯示晝面 5月參照弟5圖,其絡+只楚国 之第三純暫存11單元S(n 一电路貝方式的詳細電路圖。本實施方式之第 17 200805243 TW3165PA ^ ^ ^ rT¥ r .移位暫存器單元S(n)與第4圖之第感移位暫存器單元柳 不同之處在於驅動單元202b中更包括電晶體T3。電晶體 Τ3及T9係具有實質上相近之功能,用以於時序週期τί>3 中始控制職Vel⑻等於電壓訊號vss。如此,本實施方 式^第η級移位暫存器單元亦具有輸出負載較低及使用壽 命較長之優點’而應用本實施方式之第讀移位暫存器單 元之液晶顯示器更具有顯示畫面之品質較佳之優點。 ^請參照第6圖,其繪示乃第^圖之移位暫存器單元 之第四電^施方式的詳細電路目。本實施方式之第η級 移位暫存為hS(n)與第:)圖之第η級移位暫存器 不同之處在純準_單元職中更包括電晶體了10。() 電晶體ΤΗ)线極_至輸出端猜,閘 城CLKB’源極接收電壓vss。電晶體Τ1()用以回= ¥序喊CLKB來提供轉vss 端贿,使、 訊號Vo⑻等於電壓VSS。在時序週期τρι及T = 等於電壓_,此時電晶體T1〇為導通: Ξ 之上升緣使輪*訊號v°⑻等於電 =ss ’=在㈣週期TP2中,時序訊號clkb等 VSS,此日t電晶體T10為關閉。 、^ 本實施方式之第n級移位暫存器單位 單元204c中設置電晶體T1〇 U厂、诅早控制 中使輸*减V。(轉於電$ v : : 5二及TP3 輸出訊號V。⑻之訊號位準。如此, 200805243 二?£/晒7/几· Πν3ΐ65ΡΑ dr 負载較低及使用壽命較長之 顯示器更具有顯示晝面之品質較 存-早就液曰曰 之第二其繪示乃第1圖之移位暫存器單元S⑻ 2暫^ = W °本實施料之第η級 移位暫存器早元與第2圖之第 ^ ^ 禾n級移位暫存器單元不同之rW3165PA 200805243 Ming Mai makeup Fig. 4' is a detailed circuit diagram showing a second circuit embodiment of the shift register unit s(n) of the second embodiment. The nth stage shift temporary storage unit s(n) of the present embodiment is different from the nth stage shift register unit s(n) of the second figure in that the transistor T3 in the driving unit 2〇2a is changed to The wiring method of the transistor 。. The pole face of the transistor T9 is connected to the node ρι, and the gate receives the control signal VCl(n+2)' source receiving voltage VSS. The transistor T9 is used to provide the electrical waste vss to the node in response to the rising and the edge of the control condition number Vcl(n+2), so that the control §fl number Vcl(n) is equal to the voltage vss. ...in the timing periods TP1 and TP2, the control signal Vcl(n+2) is equal to the electric C VSS 'this #电晶 Ts> is off. In the timing period TP3, the control signal Ve 1 (η+2) is equal to the voltage _ vth to conduct the transistor Τ9, 3 to supply the voltage VSS to the node to make the voltage signal Vcl(8) or the like VSS' to turn off the transistor T2. ^ The nth stage shift register unit s (8) of the present embodiment is thrown by a transistor::: transistor T3 ' However, it is substantially similar to the transistor, and the nth stage shift register is substantially similar to the transistor. The unit also has the advantages of low load and long service life, and the application of the embodiment of the present embodiment of the η-level shift temporary storage 5 § set; #, 六曰_ u, the quality of the advantages of the early liquid is obvious Do not have a display of the face of May, reference to the 5th figure of the face, the network + only the third pure temporary storage of the unit of the state of the United States, the detailed circuit diagram of the n-circuit mode. The 17th embodiment of the present embodiment 200805243 TW3165PA ^ ^ ^ rT The difference between the shift register unit S(n) and the sense shift register unit of Fig. 4 is that the drive unit 202b further includes a transistor T3. The transistors Τ3 and T9 have substantially The similar function is used to control the Vel (8) equal to the voltage signal vss in the timing period τί> 3. Thus, the n-th stage shift register unit of the present embodiment also has the advantages of lower output load and longer service life. 'The liquid crystal display to which the shift register unit of the first embodiment of the present embodiment is applied has The advantage of the quality of the picture is better. ^ Please refer to Fig. 6, which shows the detailed circuit of the fourth embodiment of the shift register unit of Fig. 4. The nth stage shift of the embodiment The difference between the temporary storage of hS(n) and the η-level shift register of the :: map includes a transistor 10 in the pure _ unit. () Transistor ΤΗ) Line _ to the output end guess, the gate CLKB' source receives the voltage vss. The transistor Τ1() is used to return ??? CLKB to provide a turn vss bribe, so that the signal Vo(8) is equal to the voltage VSS. In the timing period τρι and T = equal to voltage _, at this time, the transistor T1 〇 is conducting: 上升 the rising edge makes the wheel * signal v ° (8) equal to electric = ss ' = in the (four) period TP2, the timing signal clkb and other VSS, this Day t transistor T10 is off. In the n-th stage shift register unit 204c of the present embodiment, the transistor T1 〇 U factory is set, and the current control is set to decrease and decrease V. (Transfer to electricity $ v : : 5 2 and TP3 output signal V. (8) The signal level. So, 200805243 2?//7/5· Πν3ΐ65ΡΑ dr The display with lower load and longer service life has more display 昼The quality of the surface is more than the first - the second of the liquid sputum is shown in Figure 1 is the shift register unit S (8) 2 temporarily ^ = W ° the implementation of the η-level shift register early and The second figure of the second figure is different from the n-stage shift register unit.

處在於驅動單元腿中更包括電晶體Tu。早个」 電晶體ΤΙ 1之沒極接收電壓VD 权 包I VUD,閘極接收時序訊號 ΙΓα ^ 點Ρ2。電晶體TU用以回應於時序 電壓彻至節‘_使控制訊號Μ⑻ 荨於電壓VDD。其中電晶體τ 11夕且* 八丁私曰日菔U1之長見比小於電晶體丁5, $此以晶體T5及T i!均為導通時,控制訊號w⑻係 被電晶體T5拉低至電壓VSS。 在時序週期ΤΠ及TP3中,時序訊號CLKB等於電壓 VDD,此時電晶體T11為導通,用以使控制訊號W⑻ 等於電壓VDD-Vth。然而電晶體T5在時序週期別為致 能,使得控制訊號Vc2(n)係被拉低致電壓vss。而在時序 週期TP2中,時序訊號CLKB等於電壓vss,而電晶體 T11為關閉。 本實施方式之第η級移位暫存器單元s(n)於位準控制 單元204b中設置電晶體T11,而其與電晶體14係具有實 質上相近之功能,用以在時序週期TP3中提升電壓訊號 Vc2(n)之位準,使其等於電壓VDD-Vth。如此,本實施方 19 200805—243麗継 . 式之第11級移位暫存裔單元亦具有輸出負载較低及使用壽 命較長之優點,而應用本實施方式之第η級移位暫存器J 元之液晶顯示裔更具有顯示晝面之品質較佳之優點。 請參照第8〜第1〇圖,其分別繪示乃第2圖之移位暫 存器單元S(n)之第六到第八電路實施方式的詳細電路圖。 其中,第六到弟八實施方式之第n級移位暫存器單元s(n) 分別為基於第4〜第6圖之第n級移位暫存器單元s(n)所衍 ⑩生之實施方式,而第六到第八實施方式與第4〜第6圖之移 位暫存器單元S(n)不同之處在於驅動單元2〇2b中更包括 電晶體丁11。如此,第力、第七及第八實施方式之移位暫 存器單元S(n)之操作可根據第五實施方式中之敘述而類推 得到。 、 請參照第11圖,其緣示乃第10圖之移位暫存器Μ 之輸出訊號Vo⑻的模擬時序圖。在本實施結構中以。各帝 晶體T1〜T11之雜散電阻為4 5kQ(千歐母),而電容 15Pf(PiC0Farad)來對輸出訊號v〇⑻進行模擬。曲線⑺_ 第nA圖之移位暫存器單元s⑻之輸出訊號v〇⑻之訊號 波形圖’而曲線1;1為以下一級移位暫存器單元之輪出訊 號ν〇(η+1)來對電晶體T9及T6進行控制時之輸出訊號 V。,⑻的訊號波形模擬圖。而由曲線1〇及η可知本杏施 例之雜暫存@單I之輪ώ訊號VG⑻具有延遲 微’其職位準上升及下降時間較短之優點。 20 200805243 -¾¾.. · ΓΨ3165ΡΑ 第二實施結構 請參照第12圖,其繪示依照本發明第一實施例之第 一實施結構之移位暫存器的方塊圖。移位暫存器2⑽與本 實施例之第一實施結構之移位暫存器1〇〇不同之處在於夂 級移位暫存器單元U(l)〜U(m-2)係包括兩個控制端RT1'二 RT2 ’其係分別接收移位暫存器單元识^〜u㈣之節點?! 上之控制訊號Vcl(3)〜Vcl(m)及移位暫存器單元 U(2)〜巩…1)之輸出訊號V〇(2)〜Vo(m_l)。接下來,係以移 ⑩位暫存為單元U(l)〜U(m)中之第η級移位暫存器單元u(n) 之結構為例來列舉本實施例之移位暫存器單元u(n)之多 種實施電路進行進一步說明,η為自然數。 请參照第13圖,其繪示乃第12圖之移位暫存器單元 U(n)之第一電路實施方式的詳細電路圖。本實施方式之移 位暫存器單元U(n)與第2圖之移位暫存器單元s(n)不同之 處在於驅動單元202b中包括電晶體T12,並以電晶體T12 取代第2圖之移位暫存器單元§(η)中之電晶體Τ3。 電晶體T12之汲極耦接至節點pi,閘極接收第n+1 級移位暫存器單元U(n+1)之輸出訊號Vo(n+l),源極接收 電壓VSS。電晶體T12用以回應於輸出訊號γ〇(η+1)之前 緣來提供電壓VSS至節點Pi,使控制訊號Vcl(n)等於電 壓VSS。在時序週期τρί及TP2中,輸出訊號v〇(n+1)等 於電壓VS S,此時電晶體丁 12均為關閉。在時序週期τρ3 中,控制訊號Vo(n+1)等於電壓VDD,如此電晶體T12為 21In the drive unit leg, a transistor Tu is further included. As early as the transistor ΤΙ 1, the receiving voltage VD is I VUD, and the gate receives the timing signal ΙΓα ^ point Ρ2. The transistor TU is used to respond to the timing voltage to the section __ so that the control signal Μ (8) is at the voltage VDD. Among them, the transistor τ 11 且 and * 八丁私曰 菔 菔 U1 is longer than the transistor 丁5, $ when the crystal T5 and T i! are both on, the control signal w (8) is pulled down to the voltage by the transistor T5 VSS. In the timing cycle TP and TP3, the timing signal CLKB is equal to the voltage VDD, and the transistor T11 is turned on to make the control signal W(8) equal to the voltage VDD-Vth. However, the transistor T5 is enabled during the timing period so that the control signal Vc2(n) is pulled down to the voltage vss. In the timing period TP2, the timing signal CLKB is equal to the voltage vss, and the transistor T11 is turned off. The n-th stage shift register unit s(n) of the present embodiment is provided with a transistor T11 in the level control unit 204b, and has a substantially similar function to the transistor 14 for use in the timing period TP3. Raise the level of the voltage signal Vc2(n) to be equal to the voltage VDD-Vth. Thus, the present embodiment 19 200805-243 丽継. The 11th stage shifting temporary storage unit also has the advantages of lower output load and longer service life, and the nth stage shift temporary storage of the present embodiment is applied. The liquid crystal display of the J-element has the advantage of showing the better quality of the face. Referring to Figs. 8 to 1 , there are shown detailed circuit diagrams of the sixth to eighth circuit embodiments of the shift register unit S(n) of Fig. 2, respectively. The nth stage shift register unit s(n) of the sixth to the eighth embodiment is respectively based on the nth stage shift register unit s(n) of the 4th to 6th figures. In the embodiment, the sixth to eighth embodiments are different from the shift register unit S(n) of the fourth to sixth embodiments in that the driving unit 2〇2b further includes a transistor 11 . Thus, the operations of the shift register unit S(n) of the third, eighth and eighth embodiments can be analogized according to the description in the fifth embodiment. Please refer to FIG. 11 for the analog timing diagram of the output signal Vo(8) of the shift register 第 of FIG. In the structure of this embodiment. The stray resistance of each of the crystals T1 to T11 is 45 kq (kiloohm), and the capacitance 15Pf (PiC0Farad) is used to simulate the output signal v 〇 (8). Curve (7) _ nA map shift register unit s (8) output signal v 〇 (8) signal waveform diagram 'and curve 1; 1 is the following level shift register unit's turn signal ν 〇 (η +1) Output signal V when controlling transistors T9 and T6. , (8) signal waveform simulation diagram. From the curves 1〇 and η, it can be seen that the MV (8) of the apricot case of the apricot case has the advantage of delaying the micro-threshold and the short-term rise and fall time. 20 200805243 -3⁄43⁄4.. ΓΨ3165ΡΑ Second Embodiment Structure Referring to Fig. 12, there is shown a block diagram of a shift register in accordance with a first embodiment of the first embodiment of the present invention. The shift register 2 (10) is different from the shift register 1 of the first embodiment of the present embodiment in that the shift register units U(1) to U(m-2) include two The control terminals RT1 'two RT2' are respectively receiving the nodes of the shift register unit identification ^~u(4)? ! The control signals Vcl(3)~Vcl(m) and the shift register unit U(2)~ Gong...1) output signals V〇(2)~Vo(m_l). Next, the shift temporary storage of the present embodiment is exemplified by taking the structure of shifting the 10-bit temporary storage into the n-th stage shift register unit u(n) in the units U(1) to U(m) as an example. Further implementation of the various implementations of the unit u(n), η is a natural number. Referring to Fig. 13, there is shown a detailed circuit diagram of a first circuit embodiment of the shift register unit U(n) of Fig. 12. The shift register unit U(n) of the present embodiment is different from the shift register unit s(n) of FIG. 2 in that the drive unit 202b includes the transistor T12 and replaces the second with the transistor T12. The transistor 移位3 in the shift register unit §(η). The drain of the transistor T12 is coupled to the node pi, the gate receives the output signal Vo(n+1) of the n+1th stage shift register unit U(n+1), and the source receives the voltage VSS. The transistor T12 is configured to supply the voltage VSS to the node Pi in response to the leading edge of the output signal γ〇(η+1) such that the control signal Vcl(n) is equal to the voltage VSS. In the timing periods τρί and TP2, the output signal v〇(n+1) is equal to the voltage VS S, at which time the transistor 12 is off. In the timing period τρ3, the control signal Vo(n+1) is equal to the voltage VDD, so the transistor T12 is 21

-TW3165PA 200805243 ~:r" ϋ..·^ ^ 導^以提供電壓vss至節點n,使電壓職W⑻等 & I壓vss m閉電晶體T2。 τ” ί:ί5式之第η級移位暫存器單元U⑻以電晶體 而立/_、第2圖中移位暫存器單元S⑻之電晶體Τ3,然 i期具有實f上相近之功效’用以於時序 ’ ’、中始控制訊號Vcl(n)等於電壓VSS。如此,本實 抑时一 炎”、、而應用本實施方式之第η級移位暫存 料70之液日日日顯示11更具有顯示晝面之品質較佳之優點。 川彳/二、、、第14圖,其繪示乃第12圖之移位暫存器單元 電路實施方式的詳細電路圖。本實施方式之移 之卢=早7"υ⑻與第13圖之移位暫存器單元S⑻不同 :=w動單元202bt更包括電晶體Τ3。然而(= 電曰曰體Τ3之功能與電晶體Τ12具有 之 替柄/1式之第η級移位暫存^單元亦具有輸出負 ==用壽命較長之優點,而應用本二負 元之液晶顯示器更具有顯示畫面之品Γ uf、二“、、第15圖,其繪示乃第12圖之移位暫存哭單 ⑻铃弟14圖之移位暫存器單itu⑻不丨 22-TW3165PA 200805243 ~:r" ϋ..·^ ^ Control ^ to provide voltage vss to node n, so that voltage W (8), etc. & I pressure vss m closed transistor T2. τ" ί: ί5 type nth stage shift register unit U (8) with transistor 立 / _, 2 in the shift register unit S (8) transistor Τ 3, then i period has the effect of the real f 'Used for timing' ', the middle start control signal Vcl(n) is equal to the voltage VSS. Thus, the liquid phase of the η-stage shift temporary storage material 70 of the present embodiment is applied. The day display 11 has the advantage of showing that the quality of the face is better. Chuanxi / 2,,, Figure 14, which is a detailed circuit diagram of the embodiment of the shift register unit circuit of Fig. 12. The shifting latitude=early 7"(8) of the present embodiment is different from the shift register unit S(8) of Fig. 13: the =w moving unit 202bt further includes the transistor Τ3. However, (= the function of the electric body Τ3 and the Τ12 shift of the transistor /12/1 type η stage shift temporary storage unit also has the advantage of output negative == long life, and the application of the second negative element The liquid crystal display has the characteristics of the display screen uf uf, two "," Figure 15, which is shown in Figure 12 shift temporary storage crying (8) ring brother 14 map shift register single itu (8) not 22

lW3165PA 200805243 之處在於位準控制單元204c中更包括電晶體T10。如此, 本實施方式之第n級移位暫存器單元贝幻係可於於時序週 期ΤΡ1及ΤΡ3中使輪出訊號Vo⑻等於電壓VSS,以避免 其寄生電容產生之雜訊影響輸出訊號v〇(n)之訊號位準。 如此,本實施方式之第η級移位暫存器單元亦具有輪出負 載較低及使用壽命較長之優點,而應用本實施方式之第η 級移位暫存器單元之液晶顯示器更具有顯示晝面之品質 較佳之優點。 請參照第16〜第18圖,其分別繪示乃第12圖之移位 暫存器單元U(n)之第四到第六電路實施方式的詳細電路 圖其中,第四到第六實施方式之第n級移位暫存器單元 U(n)刀別為基於第13〜第1 $圖之第n級移位暫存器單元 U(n)所衍生之實施方式。第四到第六實施方式與第〜第 15圖之移位暫存器單元u(n)不同之處在於驅動單元2〇处 中更包括電晶體T11,其和電晶體T4具有實質上相近之功 月b,用以在時序週期τρ3中提升電壓訊號Vc2(n)之位準, 使其為電壓VDD-Vth。如此,本實施方式之第n級移位暫 存裔單元亦具有輸出負載較低及使用壽命較長之優點,而 應用本實施方式之第η級移位暫存器單元之液晶顯示器更 具有顯示畫面之品質較佳之優點。 第二實施例 本實施例之移位暫存器與第一實施例之移位暫存器 23lW3165PA 200805243 is that the level control unit 204c further includes a transistor T10. In this way, the nth stage shift register unit of the present embodiment can make the round-out signal Vo(8) equal to the voltage VSS in the timing periods ΤΡ1 and ΤΡ3, so as to avoid the noise generated by the parasitic capacitance affecting the output signal v〇. (n) The signal level. Therefore, the n-th stage shift register unit of the embodiment also has the advantages of lower wheel load and longer service life, and the liquid crystal display of the n-th stage shift register unit of the embodiment has more Shows the advantages of better quality of the face. Please refer to the 16th to 18th drawings, which respectively show detailed circuit diagrams of the fourth to sixth circuit embodiments of the shift register unit U(n) of FIG. 12, wherein the fourth to sixth embodiments are The nth stage shift register unit U(n) is an embodiment derived from the nth stage shift register unit U(n) of the 13th to 1st $. The fourth to sixth embodiments are different from the shift register unit u(n) of the first to fifteenth embodiments in that the driving unit 2 further includes a transistor T11 which is substantially similar to the transistor T4. The power month b is used to raise the level of the voltage signal Vc2(n) in the timing period τρ3 to be the voltage VDD-Vth. In this way, the nth stage shifting temporary storage unit of the embodiment also has the advantages of lower output load and longer service life, and the liquid crystal display of the nth stage shift register unit of the embodiment has more display. The advantage of the quality of the picture is better. SECOND EMBODIMENT A shift register of the present embodiment and a shift register of the first embodiment 23

ΐ 一,:ΐ. 200805243…ΐ One,: ΐ. 200805243...

二;^麵;m * iW3165PA •不同之處在於其中^級移位暫存器單元之驅動單元係用 以回應=第n+2級移位暫存器單元之第一控制訊號之前緣 來關閉第-位準控制單元。n為自然數。接下來,列舉實 施結構來對第η級移位暫存器單元之操作詳細說明之。、 第一實施結構 纟實施結構之移位暫存器與第!圖中缘示之第一實施 ▲例中第-實施結構之移位暫存器為實質上相等,.昭、相 • 關敘述。 ”、 請參照第19 ® ’其㈣乃L移位暫存器單元 S⑻之第九電路實施方式的詳細電路圖。本實施方式之彩 位暫存器單元S⑻與第8圖之移位暫存器單元不同之處^ 於其係不具有位準控制單元心,而僅經由位準控制單f 204b來使輸出訊號γ0⑻等於電壓 、 影響輸心《 V。⑻之減鱗。如ά S 電路_ 級移位暫存器單元亦具有輸出負 :知方式之第 實施方式之第η級移位暫存器單㈣ 示晝面之品質較佳之優點。 、斋更具有| 请參照弟20圖,其繪示乃第 S(n)之第十電路實施方式的詳細‘之移,存器單元 位暫存器單元S(n)與第19圖之務:。本貫施方式之移 在於其驅動單元202a更包括雷曰 于裔早兀不同之處 电日曰體乃’其係用以回應於 2008052432; ^ face; m * iW3165PA • The difference is that the drive unit of the shift register unit is used to respond to the first control signal of the n+2 shift register unit. Level-level control unit. n is a natural number. Next, the implementation structure will be enumerated to explain the operation of the n-th stage shift register unit in detail. , the first implementation structure 纟 implementation of the structure of the shift register and the first! The first embodiment shown in the figure ▲ The shift register of the first embodiment is substantially equal, and the description is shown. Please refer to the detailed circuit diagram of the ninth circuit embodiment of the 19th (the fourth) is the L shift register unit S (8). The color register register unit S (8) of the present embodiment and the shift register of the eighth figure The difference in the unit is that it does not have the level control unit core, but only the level control unit f 204b is used to make the output signal γ0(8) equal to the voltage, affecting the reduction of the center of the heart "V. (8). For example, ά S circuit _ level The shift register unit also has the advantage of output negative: the n-th stage shift register of the first embodiment (four) shows that the quality of the surface is better. The detailed shift of the tenth circuit embodiment of the S(n), the register of the register unit bit register unit S(n) and the figure of FIG. 19: the shift of the present embodiment is in the drive unit 202a thereof. It also includes the difference between the Thunder and the early days of the 电 电 电 乃 乃 乃 乃 ' ' ' 其 其 200 200 200 200

PW3165PAPW3165PA

時序訊號CLKB來提供輸出訊號ν〇(η·1)至節點ρι。如此, 本實施方式之第η級移位暫存器單元亦具有輪出負載=低 之優點,而應用本實施方式之第η級移位暫存器單元之液 晶顯示器更具有顯示晝面之品質較佳之優點。 第二實施結構 本實施結構之移位暫存器與第12圖中繪示之第一實 施例中第二實施結構之移位暫存器為實質上相等,請參^ 召、 • 相關敘述。 請參照第21圖,其繪示乃第12圖之移位暫存器單元 U(n)之第七電路實施方式.的詳細電路圖。本實施方式之移 位暫存器單元U(n)與第20圖之移位暫存器單元不同之/ 在於其係不具有電晶體T11,而更包括位準控制單元 204c,其中包括電晶體T13。 電晶體T13之汲極耦接至輸出端〇υτ,閘極接收第 η+ι級移位暫存器單元u(n+1)之輸出訊號ν〇(η+ι),源極 接收電塵vss。電晶體Τ13用以回應於輸出訊號ν〇㈣) 之前緣來提供 VSS至輸出端·,使輪出訊號^⑻ 等於電壓VSS 〇 在日守序週期TP1中,輸出訊號v〇(n+】:)等於電壓vss, 此時輸出訊號Vo⑻等於電壓vss。在時序週期τρ2中, 輸出訊號V〇(n+l)等於電壓vss,此時電晶體们3為關閉 以使輸出訊號Vo(n)等於電壓VDD。而在時序週期τρ3 * - . 25 V 'j j J ^' *The timing signal CLKB provides an output signal ν〇(η·1) to a node ρι. Therefore, the n-th stage shift register unit of the embodiment also has the advantage of the round-off load=low, and the liquid crystal display of the n-th stage shift register unit of the embodiment has the quality of displaying the surface. The advantage is better. SECOND EMBODIMENT Structure The shift register of the present embodiment is substantially equal to the shift register of the second embodiment in the first embodiment shown in Fig. 12. Please refer to the description. Referring to FIG. 21, a detailed circuit diagram of a seventh circuit embodiment of the shift register unit U(n) of FIG. 12 is shown. The shift register unit U(n) of the present embodiment is different from the shift register unit of FIG. 20 in that it does not have the transistor T11, and further includes a level control unit 204c including a transistor. T13. The drain of the transistor T13 is coupled to the output terminal 〇υτ, and the gate receives the output signal ν〇(η+ι) of the n+th stage shift register unit u(n+1), and the source receives the electric dust. Vss. The transistor Τ13 is configured to provide VSS to the output terminal in response to the leading edge of the output signal ν〇(4)), so that the round-out signal ^(8) is equal to the voltage VSS 〇 in the day-sequence period TP1, and the output signal v〇(n+]:) Equal to the voltage vss, the output signal Vo(8) is equal to the voltage vss. In the timing period τρ2, the output signal V〇(n+1) is equal to the voltage vss, at which time the transistors 3 are turned off so that the output signal Vo(n) is equal to the voltage VDD. And in the timing period τρ3 * - . 25 V 'j j J ^' *

V 'j j J ^' * -TW3165PA 200805243 中,輸出訊號Vo(n+1)等於電壓VDD ’此時電晶體m為 導通,以使輸出訊號Vo(n)等於電壓VSS。 本實施方式之第η級移位暫存器單元u(n)於位準控制 單元204c中設置電晶體T13,以於時序週期1?3中使輪 出訊號Vo⑻等於電壓VSS,以避免電路雜訊影響輸出訊 號Vo(n)之訊號位準。由於本實施方式之地η級移位暫存 器單元係根據第η +1級移位暫存器單元之輸出訊號來控制 一個電晶體之操作,如此,本實施方式之第η級移位暫存 ⑩ 器早元亦具有輸出負載較低及使用胥命較長之優點,而應、 用本實施方式之第η級移位暫存器單元之液晶顯示器更具 有顯示晝面之品質較佳之優點。 ' 請參照第22圖,其繪示乃第12圖之移位暫存器單元 U(n)之第八電路實施方式的詳細電路圖。本實施方式之移 位暫存器單元U(n)與第21圖之移位暫存器單元不同之^ 在於驅動單元202a中更包括電晶體丁3,用以回應於時$ 訊號CLKB來提供輸出訊號Vo(n-l)至節點P1。如此, 實施方式之第η級移位暫存器單元亦具有輪出負載較低^ 使用壽命較長之優點,而應用本實施方式之第n級移位 存為單元之液晶顯示态更具有顯示畫面之品質較佳之件 點。 請參照第23圖,其繪示乃第12圖之移位暫存器單元 U(n)之第九電路實施方式的詳細電路圖。本實施方^之= 26 200805243 〜In V 'j j J ^' * -TW3165PA 200805243, the output signal Vo(n+1) is equal to the voltage VDD'. At this time, the transistor m is turned on so that the output signal Vo(n) is equal to the voltage VSS. The n-th stage shift register unit u(n) of the present embodiment is provided with a transistor T13 in the level control unit 204c to make the round-out signal Vo(8) equal to the voltage VSS in the timing period 1?3 to avoid circuit miscellaneous The signal affects the signal level of the output signal Vo(n). Since the n-stage shift register unit of the embodiment controls the operation of a transistor according to the output signal of the n+1th-order shift register unit, the n-th shift of the present embodiment is temporarily suspended. The memory device has the advantages of lower output load and longer service life, and the liquid crystal display of the n-th stage shift register unit of the present embodiment has the advantage of better quality of the display surface. . Referring to Fig. 22, a detailed circuit diagram of an eighth circuit embodiment of the shift register unit U(n) of Fig. 12 is shown. The shift register unit U(n) of the present embodiment is different from the shift register unit of FIG. 21 in that the driving unit 202a further includes a transistor 3 for providing in response to the time signal CLKB. The signal Vo(nl) is output to the node P1. In this way, the n-th stage shift register unit of the embodiment also has the advantages that the wheel load is lower and the service life is longer, and the liquid crystal display state in which the n-th stage shift storage unit of the embodiment is applied has a display. The quality of the picture is better. Referring to Fig. 23, there is shown a detailed circuit diagram of a ninth circuit embodiment of the shift register unit U(n) of Fig. 12. The implementation of the ^ ^ = 26 200805243 ~

· ^W3165PA , 位暫存裔單元U(n)與第22圖之移位暫存器單元不同之處 f於位準控制單元204c中更包括電晶體T10,其係用以於 k序週期TP1及丁!>3中使輸出訊號¥〇(11)等於電壓^8, 以避免電路雜訊影響輪出訊號v〇(n)之訊號位準。如此, 本實施方式之第n級移位暫存器單元亦具有輸出負载較低 及使用壽命較長之優點,而應用本實施方式之第η級移位 暫存器單元之液晶顯示器更具有顯示晝面之品質較佳之 優點。· ^W3165PA, the bit temporary storage unit U(n) is different from the shift register unit of FIG. 22, f further includes a transistor T10 in the level control unit 204c, which is used for the k-sequence period TP1 And Ding! > 3 makes the output signal ¥ 〇 (11) equal to the voltage ^8, to avoid circuit noise affecting the signal level of the turn-off signal v 〇 (n). Therefore, the nth stage shift register unit of the embodiment also has the advantages of lower output load and longer service life, and the liquid crystal display of the nth stage shift register unit of the embodiment has more display. The advantage of better quality of the noodles.

請參照第24〜第26圖,其分別繪示乃第圖之移位 暫存益單το U(n)之第十到第十二電路實施方式的詳細電 ,圖。其中,第十到第十二實施方式之第^級移位暫存器 單元U(n)分別為基於第21〜第23圖之第n級移位暫存器 單元U(n)所衍生之實施方式。第十到第十二實施方式之^多 位暫存盗單元U(n)與第21〜第23圖之移位暫存器單元不 同之處在於驅動單元202b中更包括電晶體τη,以在時序 週期TP3中與電晶體T4 —起提升電壓訊號ve2⑷之位 準,使其實質上等於電壓VDD。如此,本實施方式之第η 級移位暫存H單元亦具錢ά貞餘似㈣壽命較長 之優點,^應用本實施方式之第η級移位暫翻單元^ 晶顯示器更具有顯示晝面之品質較佳之優點。 第三實施結構 實施例之 請參照第27圖,其繪示乃依照本發明 27 200805243,露隨:Please refer to pages 24 to 26, which respectively show the detailed electric diagrams of the tenth to twelfth circuit embodiments of the shift temporary stock benefit το U(n) of the figure. The first stage shift register unit U(n) of the tenth to twelfth embodiments is derived from the nth stage shift register unit U(n) according to the 21st to 23rd graphs, respectively. Implementation. The multi-digit temporary storage unit U(n) of the tenth to twelfth embodiments is different from the shift register unit of the 21st to 23rd drawings in that the driving unit 202b further includes a transistor τη to In the timing period TP3, the level of the voltage signal ve2(4) is raised with the transistor T4 to be substantially equal to the voltage VDD. In this way, the n-th stage shifting temporary storage H unit of the present embodiment also has the advantage of having a longer life (4), and the application of the n-th shifting temporary flipping unit of the present embodiment has more display. The advantage of better quality. Third Embodiment Structure Referring to Figure 27, it is shown in accordance with the present invention 27 200805243, with the following:

, 二理獅抓.rW3165PA • 第二實施結構之移位暫存器的方塊圖。移位暫存器3〇0與 第一實施例之第二實施結構之移位暫存器2〇〇不同之處在 於各級移位暫存器單元w(1)〜w(m-2)之控制端RT1及以丁2 係分別接收移位暫存器單元w(2)〜w(m·〗)之節點ρι上之 控制訊號Vcl(2)〜Vcl(m-i)及移位暫存器單元w⑺〜w(m) 之筇點P1上之控制訊號Vcl(3)〜Vcl(m)。接下來,係以移 位暫存器單元W(1)〜w(m)中之第n級移位暫存器單元…⑻ 之,構為例來列舉本實施例之移位暫存器單元ψ(η)之多 釀種實施電路進行進一步說明,n為自然數。 請參照第28圖,其繪示乃第27圖之移位暫存器單元 W(n)之第一電路實施方式的詳細電路圖。本實施方式之移 位暫存器單sw⑻與帛8圖之移仅暫存器單元S⑻不同之 處在於位準控制單元204c中具有電晶體Τ6,,並以其取代 電晶體Τό 〇 齡電晶體Τ6’之没極搞接至節·點ρ卜閘極接收第(η+1) 級移位暫存器單元w(n+1)之控制訊號%㈣),源極接 收時序訊號CLK。t晶體T6,用以於控制訊號〜1(11+1)之 位準高於時序減CLK之㈣時提供時序職Μ至輸 出端OUT。 、在時序週期m及TP2中,控制訊號Vcl(n+1)分別 等於電C VSS及電壓VDD-Vth’而時序訊號CLK分別等 於電疋VSS及電壓VDD。如此,在時序週期丁?1及τρ2 中電晶體T6,均為關閉。在時序週期τρ3中,控制訊號 28, Ershi lion catch. rW3165PA • Block diagram of the shift register of the second implementation structure. The shift register 3〇0 differs from the shift register 2〇〇 of the second embodiment of the first embodiment in that each stage of the shift register unit w(1)~w(m-2) The control terminal RT1 and the D2 system receive the control signals Vcl(2)~Vcl(mi) and the shift register on the node ρι of the shift register unit w(2)~w(m·), respectively. The control signals Vcl(3) to Vcl(m) at the point P1 of the unit w(7)~w(m). Next, the shift register unit of the present embodiment is listed as an example of the nth stage shift register unit (8) in the shift register units W(1) to w(m). Further, the 酿(η) brewing implementation circuit is further described, and n is a natural number. Referring to Figure 28, there is shown a detailed circuit diagram of a first circuit embodiment of the shift register unit W(n) of Figure 27. The shift register single sw(8) and the 帛8 map shift of the present embodiment differ only from the register unit S(8) in that the level control unit 204c has a transistor Τ6, and replaces the transistor 〇 〇 age transistor with it. Τ6' is not connected to the node, and the gate receives the control signal %(4) of the (n+1)th stage shift register unit w(n+1), and the source receives the timing signal CLK. The crystal T6 is used to provide a timing job to the output terminal OUT when the level of the control signal ~1 (11+1) is higher than the timing minus CLK (4). In the timing periods m and TP2, the control signals Vcl(n+1) are equal to the power C VSS and the voltage VDD-Vth', respectively, and the timing signals CLK are equal to the power VSS and the voltage VDD, respectively. So, in the timing cycle? 1 and τρ2 The transistor T6 is turned off. In the timing period τρ3, the control signal 28

200805243 • 二遂編航· rW3165PA vcl_)相較於其在時序週期ΤΡ2中之位準更進—步提升 差值電壓Δν,而時序訊號CLK等於電M VSS。如此, 在時序週期把中電晶體76,為導通,以提供時序訊號 CLK之低電壓位準至輸出端〇υτ,使輸出訊號 電壓VSS 〇 本實施方式之第η級移位暫存器單元聊)以電晶體 丁6’來取代電晶體T6 ’以於時序週期τρ3中使輸出訊號 V。⑻等於電壓VSS,來避免電路雜訊影響輸出訊號ν〇(η) 之。孔號位$而私日日體Τ6’更可於電晶體η因長時間導通 而因應力效應之影響喊作㈣時來拉低輸出訊號,使复 料最低《位準。如此,本實施方式之第^移位暫^ 器早兀亦具有輸出貞載較低及使料命較長之優點,而應 用本實施方式之第η級肺暫存器單元之液㈣示器更具 有顯示晝面之品質較佳之優點。 、 請參照第29圖,其繪示乃第27圖之移位暫存器單 W(n)之第二電路實施方式的詳細電路圖。本實施方式之j 位暫存器單元W⑻與帛28圖之移位暫存器單a w⑷不j 之處在於驅動單元202a中更包括電晶體T3,其係用以它 應於時序訊號CLKB來提供輸出訊號vo^q)至節點^ 如此,本實施方式之第n級移位暫存器單元亦具 載較低及使用壽命較長之優點,而應甩本實施方式之第j 級移位暫存器單元之液晶顯示器更具有顯示晝面之品質 較佳之優點。 ' 29 200805243 , ^200805243 • Two-way navigator · rW3165PA vcl_) advances step-by-step with the difference voltage Δν compared to its level in the timing period ΤΡ2, while the timing signal CLK is equal to the power M VSS . In this way, the transistor 76 is turned on during the timing period to provide the low voltage level of the timing signal CLK to the output terminal 〇υτ, so that the output signal voltage VSS is in the nth stage shift register unit of the present embodiment. The transistor T6' is replaced by a transistor D' to enable the output signal V in the timing period τρ3. (8) Equal to the voltage VSS to prevent circuit noise from affecting the output signal ν〇(η). The hole number is $ and the private day body Τ6' can lower the output signal when the transistor η is called for a long time due to the influence of the stress effect, so that the material is at the lowest level. In this way, the first shifting device of the present embodiment also has the advantages of lower output load and longer material life, and the liquid (four) display of the n-th stage lung register unit of the present embodiment is applied. It has the advantage of showing better quality of the face. Referring to FIG. 29, a detailed circuit diagram of a second circuit embodiment of the shift register unit W(n) of FIG. 27 is shown. The shift register unit a (4) of the j-bit register unit W (8) and the 帛 28 diagram of the present embodiment is not included in the drive unit 202a, and the transistor T3 is further included in the timing signal CLKB. The output signal vo^q) is provided to the node ^. Thus, the nth stage shift register unit of the embodiment has the advantages of lower load and longer service life, and should be shifted by the jth stage of the embodiment. The liquid crystal display of the register unit has the advantage of better quality of the display surface. ' 29 200805243 , ^

^ 二達緬航· FW3165PA ,…請t照第3〇圖’其繪示乃第27圖之移位暫存器單元 η之弟一兒路實施方式的詳細電路圖。本實施方 位暫存器單元W⑻與第29圖之移位暫存器單元w(n) = 之處在於位準控制單元耻中更包括電晶體丁10,其係用 以於時序週期TP1及τρ3中使輸出訊號ν〇⑻等於電壓 VSS ’ 1 避免電路雜訊影響輸出訊號ν〇⑻之訊號位準。如 此,本貫施方式之第η級移位暫存器單元亦具有輪出負 •較低及使用壽命較長之優點,而應用本實施方式之第_ 和位暫存n單元之液晶赫器更具有顯*晝面之品 佳之優點。 第三實施例 本實施例之移位暫存器與第一實施例之移位暫存器 =同之處在於其中第n級移位暫存器單元之第三位準控制 單70係用以回應於第n+1級移位暫存器單元之第一控制訊 號之月il緣來提供第一時序訊號之低電壓位準至輸出端。η 為自然數。接下來,列舉實施結構來對第η級移位暫存器 單元之操作詳細說明之。 第一實施架構 請參照第31圖,其繪示乃依照本發明第三實施例之 第一實施結構之移位暫存器的方塊圖。移位暫存器400與 第一實施例之第一實施結構之移位暫存器1〇〇不同之處在 於各級移位暫存器單元x(1)〜x(m-2)之控制端RT係接收 30 200805243 ,^ 二达缅航· FW3165PA, ... Please refer to Figure 3, which shows the detailed circuit diagram of the implementation of the shift register unit η of the 27th figure. The orientation register unit W(8) of the present embodiment and the shift register unit w(n) of FIG. 29 are in that the level control unit includes a transistor 10, which is used for the timing periods TP1 and τρ3. The intermediate output signal ν 〇 (8) is equal to the voltage VSS ' 1 to avoid circuit noise affecting the signal level of the output signal ν 〇 (8). In this way, the n-th stage shift register unit of the present embodiment also has the advantages of negative turn-off, low turn, and long service life, and the liquid crystal device of the _th and bit temporary storage n units of the present embodiment is applied. It has the advantage of being good and good. Third Embodiment The shift register of the present embodiment is the same as the shift register of the first embodiment in that the third level control unit 70 of the nth stage shift register unit is used. The low voltage level of the first timing signal is provided to the output terminal in response to the month il edge of the first control signal of the n+1th stage shift register unit. η is a natural number. Next, the implementation structure will be described in detail for the operation of the n-th stage shift register unit. First Embodiment Architecture Referring to Figure 31, there is shown a block diagram of a shift register in accordance with a first embodiment of the third embodiment of the present invention. The shift register 400 differs from the shift register 1 of the first embodiment of the first embodiment in the control of the shift register units x(1) to x(m-2) of each stage. End RT receives 30 200805243,

^ 二连福航· TW3165PA _ 移位暫存為單元X(2)〜X(m-l)之節點PI上之控制訊號^ Erlian Fuhang·TW3165PA _ Shift temporary storage control signal on node PI of unit X(2)~X(m-l)

Vcl(2)〜Vcl(m-l)。接下來,係以移值暫存器單元又⑴〜x(m) 中之第η級移位暫存器單元χ(η)之結構為例來列舉本實施 例之移位暫存為單元χ(η)之多種實施電路進行進一步說 明,η為自然數。 明參R?、第32圖,其繪示乃第31圖之移位暫存器單元 Χ(η)之第一電路實施方式的詳細電路圖。本實施方式之移 • 位暫存器單元Χ(η)與第2圖之移位暫存器單元s(n)不同之 處在於位準控制單元204c中具有電晶體T6,,並以其取代 電晶體T6,以於時序週期TP3中使輸出訊號Vo(n)等於電 壓VSS,來避免電路雜訊影響輸出訊號Vo⑻之訊號乜準、; 而電晶體T6,更可於電晶體T7因長時間導通因應力效應 之影響而操作異常時來拉低輸出訊號,使其等於最低電壓 位準。如此,本實施方式之第η級移位暫存器單元亦具有 籲 輸出負載較低及使用壽命較長之優點,而應用本實施方式 之第η級移位暫存器單元之液晶顯示器更具有顯示晝面之 品質較佳之優點。 請參照第33圖,其繪示乃第31圖之移位暫存器單元 Χ(η)之弟一電路實施方式的詳細電·路圖。本實施方式之移 位暫存器單元Χ(η)與第32圖之移位暫存器單元S(n)不同 之處在於驅動單元202a中具有電晶體T9,,並以其取代電 晶體T3 〇 2〇〇8〇5243rW3l65PA ' — 一 電晶體T9’之汲極耦接至節點PI,閘極接收第n+1級 移位暫存益單元Χ(η+1)之控制訊號Vci(n+1),源極接收時 序訊號CLK。電晶體T9,用以於控制訊號Vcl(n+1)之位準 高於時序訊號CLK之位準時提供時序訊號CLK至節點 P1 ’使控制訊號Vcl(n)等於時序訊號CLK。 在時序週期TP1及TP2中,控制訊號vcl(n+l)分別 等於,壓VSS及電壓(VDD-Vth),而時序訊號CLK分別等 於電壓VSS及電壓VDD。如此,在時序週期TP1及τρ2 •中電曰曰體T9’均為關閉。在時序週期TP3中,控制訊號Vcl(2)~Vcl(m-l). Next, taking the structure of the nth stage shift register unit χ(n) in the value shift register unit (1) to x(m) as an example, the shift temporary storage unit of the present embodiment is listed as a unit. Further description of various implementation circuits of (n), η is a natural number. A detailed circuit diagram of a first circuit embodiment of the shift register unit Χ(η) of FIG. 31 is shown in FIG. The shift register unit Χ(n) of the present embodiment is different from the shift register unit s(n) of FIG. 2 in that the level control unit 204c has a transistor T6 and is replaced by The transistor T6 is configured to prevent the output signal Vo(n) from being equal to the voltage VSS during the timing period TP3 to prevent the circuit noise from affecting the signal signal of the output signal Vo(8); and the transistor T6 is more likely to be in the transistor T7 for a long time. When the conduction is abnormal due to the influence of the stress effect, the output signal is pulled down to be equal to the lowest voltage level. Therefore, the n-th stage shift register unit of the embodiment has the advantages of lower output load and longer service life, and the liquid crystal display of the n-th stage shift register unit of the embodiment has more Shows the advantages of better quality of the face. Referring to Figure 33, there is shown a detailed electrical circuit diagram of the embodiment of the circuit of the shift register unit Χ(η) of Fig. 31. The shift register unit Χ(n) of the present embodiment is different from the shift register unit S(n) of FIG. 32 in that the drive unit 202a has a transistor T9, and replaces the transistor T3 with it. 〇2〇〇8〇5243rW3l65PA ' — The drain of a transistor T9' is coupled to the node PI, and the gate receives the control signal Vci of the n+1th shift temporary storage unit η(η+1) (n+ 1) The source receives the timing signal CLK. The transistor T9 is configured to provide the timing signal CLK to the node P1' to make the control signal Vcl(n) equal to the timing signal CLK when the level of the control signal Vcl(n+1) is higher than the level of the timing signal CLK. In the timing periods TP1 and TP2, the control signals vcl(n+l) are equal to VSS and voltage (VDD-Vth), respectively, and the timing signals CLK are equal to the voltage VSS and the voltage VDD, respectively. Thus, in the timing periods TP1 and τρ2, the intermediate power body T9' is turned off. In the timing cycle TP3, the control signal

Vcl(n+1)相較於其在時序週期τρ2中之位準更進一步提升 一差值電壓Δν,而時序訊號CLK等於電壓vss。如此, 在時序週期TP3中電晶體T9,為導通,以提供時序訊號 CLK之低電麼位準至節點ρι,使控制訊號等於 壓 VSS 〇 ,本貝%方式之第n級移位暫存器單元χ(η)以電晶體 T9、來取代電晶體T3。然而,T9,與電晶體乃具有實質上 =近之功效,用以於時序週期τρ3中始控制訊號Vd⑻ :於電壓VSS。如此,本實施方式之第η級移位暫存器單 =具有如貞餘缺使料命較長之韻,而應用本 [:方式之第η級移位暫存器單元之液晶顯示器更具有顯 不旦面之品質較佳之優點。 32Vcl(n+1) further increases a difference voltage Δν compared to its level in the timing period τρ2, and the timing signal CLK is equal to the voltage vss. Thus, in the timing period TP3, the transistor T9 is turned on to provide the low level of the timing signal CLK to the node ρ, so that the control signal is equal to the voltage VSS 〇, the nth stage shift register of the local mode The cell χ(η) replaces the transistor T3 with a transistor T9. However, T9, with the transistor, has a substantially close function to control the signal Vd(8) in the timing period τρ3: at the voltage VSS. Thus, the n-th stage shift register of the present embodiment has a rhyme that has a long life, and the liquid crystal display of the n-th shift register unit of the present mode is more visible. The advantage of better quality. 32

TW3165PA 200805243 •路圖。在^到H施方式t之移位暫存器單元χ⑻ 係/刀別為弟5〜弟10圖中之移位暫存器單元 口:其χ=之處在於第三到㈣ 存抑早^⑻係將移位暫存器單元啊中之電晶體吖及 T9分別以電晶體Τ6’及Τ9’取代。如此,第三到第八實施 :式:之私:暫存器單疋之操作及功效係可根據第一及 弟一貫施方式中之敘述類推得到。 •第二實施架構 …明參第40圖’其緣示乃依照本發明第三實施例之 ^二^施結構之移位暫存器的方塊圖。移位暫存器5〇〇與 弟-貫施例之第二實施結構之移位暫存器·不同之處在 =各級移位暫存器單元γ⑴〜Y(m_2)之控制端咖係接收 =存…γ(2)〜之節點ρι上之控制訊號 C ()〜Vcl(m-l),而各級移位暫存器單元丫⑴瓜 • 係接收下一級移位暫存器單傳γ⑽之輸 出況號Vo(2)〜Vo(m)。接下來,係以移位暫存器單元 之第n級移位暫存器單元γ⑻之結構為例來 _本貫_之移位暫存器單⑻之多種實施電路進 行進一步說明,η為自然數。. 暫存=二t 其分騎示乃第40圖之⑽ 图存'早XY⑻之弟—至第六電路實施方式的詳細電路 圖。在弟i第六實施方式中之移位暫存器單元γ(η)^ '…一----- - -- - . - 33TW3165PA 200805243 • Road map. In the shift register unit of the ^ to H mode t (8) system / knife is the shift register unit port in the brother 5 ~ brother 10 picture: the χ = the third is to (4) the deposit is early ^ (8) The transistor 吖 and T9 in the shift register unit are replaced by transistors '6' and Τ9', respectively. Thus, the third to the eighth implementation: the formula: private: the operation and function of the temporary register unit can be obtained according to the description in the first and second consistent manners. The second embodiment of the present invention is a block diagram of a shift register in accordance with a third embodiment of the present invention. The shift register 5 is different from the shift register of the second embodiment of the second embodiment. The difference is in the control terminal of the shift register unit γ(1)~Y(m_2) Receive = save ... γ (2) ~ node ρι on the control signal C () ~ Vcl (ml), and each level shift register unit 丫 (1) melon system receives the next stage shift register single pass γ (10) Output condition number Vo(2)~Vo(m). Next, taking the structure of the nth stage shift register unit γ(8) of the shift register unit as an example, the various implementation circuits of the shift register unit (8) of the local _ register are further explained, and η is natural. number. Temporary storage = two t The sub-riding is shown in Figure 40 (10) The detailed circuit diagram of the sixth circuit implementation of the 'early XY (8) brother. In the sixth embodiment, the shift register unit γ(η)^ '...一---------- 33

2008〇5243TW3165PA 別為第13〜第18圖中之移位暫存哭to — 式,其中不同之處在於第-到第;:I (n)之衍生實施方 單元Y(n)係將第13〜第18圖中'暫存器 之電晶體T6以電晶體T6,取代。如此,第一=^η)中 式中之移位暫存器單元之摔作及# % / 弟A貝、施方 一 乍及功效係可根據第一實施 架構之移位暫存器之第一及第二竇 得到。乐灵知方式中之敘述類推 第四實施例 本實施例之移位暫存器與第二實施例之移位暫存哭 不同之處在於其中第η級移位暫存器以之第—驅動單元 係用以於第η+1級移位暫存器單元之第一控制訊號之位準 高於第一時序訊號之位準時來關閉第一位準控制單元。n2008〇5243TW3165PA is not the shift temporary storage crying in the 13th to 18th, except that the first to the first;:I (n) derivative implementation unit Y(n) will be the 13th ~ In Figure 18, the transistor T6 of the register is replaced by a transistor T6. Thus, the first shift register unit in the first = ^ η) and the # % / 弟 A, 司方乍 and the function can be the first according to the first embodiment of the shift register And the second sinus gets. The description of the fourth embodiment of the present invention is different from the shift temporary storage of the second embodiment in that the n-th stage shift register is driven first. The unit is configured to close the first level control unit when the level of the first control signal of the n+1th shift register unit is higher than the level of the first timing signal. n

為自然數。接下來,列舉實施結構來,對第n級移位暫存器 單元之操作詳細說明之。 TO 第一實施架構 本實施結構之移位暫存器與第31圖中繪示之第三實 施例中第一實施結構之移也暫存器為實質上相等,請參照 相關敘述。 請參照第47及48圖,其繪示乃第31圖之移位暫存 器單元X(n)之第九及第十電路實施方式的詳細電路圖。在 第九及第十實施方式中之移位暫存器單元χ(η)係分別為 34 200805243For natural numbers. Next, the implementation structure will be described in detail, and the operation of the nth stage shift register unit will be described in detail. TO First Embodiment Architecture The shift register of the present embodiment is substantially equal to the shift register of the first embodiment in the third embodiment shown in Fig. 31. Please refer to the related description. Referring to Figures 47 and 48, there is shown a detailed circuit diagram of the ninth and tenth circuit embodiments of the shift register unit X(n) of Figure 31. In the ninth and tenth embodiments, the shift register unit χ(η) is 34 200805243

* TW3165PA -S 19及第2G圖中之移位暫存器單元s⑻之衍生實施方 式’其中不同之處在於第九及第十實施方式之移位暫存器 單元X⑻係將移位暫存器單元s(n)中之電晶禮T9以電晶 體T9,取代。如此,第九及第十實施方式中之移位暫存器 單元之操作及功效係可根據第三實施例之第〆實施架構 之移位暫存器之第二實施方式中之敘述類推得到。 第二實施架構 本實施結構之移位暫存器與第4G圖中_之第三實 施例中第二實施結構之移位暫存器為實質上相等,請參照 相關敛述。 明錄弟49〜54圖,其纷示乃 移 早以⑻之第^針二電路實施 存二 第七到第十二實施方式中之移位 ^、、·田電路圖。名 為第21〜26圖中之移位暫存器單元 '早:Y⑻係分別 其中不同之處在於第七到第十二實施^之街生實施方式, 單元Y(n)係將移位暫存器單元以匀中式之移位暫存器 體T9,取代。如此,第七到第十二實施t電晶體丁9以電晶 為單元之操作及功效係可根據第二每a方式中之移位暫存 構之移位暫存器之第二實施方式中例之第一實施架 凌述類推得到。 第三實施架構 示之第二實 本實施結構之移位暫存器鱼第 ”弟27圖中繪 35* Derivative embodiment of shift register unit s (8) in TW3165PA-S 19 and 2G diagrams, wherein the shift register unit X(8) of the ninth and tenth embodiments is a shift register The electro-ceramic T9 in the unit s(n) is replaced by a transistor T9. Thus, the operation and the operation of the shift register unit in the ninth and tenth embodiments can be obtained by analogy in the second embodiment of the shift register of the third embodiment of the third embodiment. SECOND EMBODIMENT STRUCTURE The shift register of the present embodiment is substantially equal to the shift register of the second embodiment in the third embodiment of Fig. 4G. Please refer to the related description. Ming Ludi 49~54, the display is moved as early as (8) the second pin circuit implementation saves the seventh to twelfth embodiment of the shift ^,, · Tian circuit diagram. The shift register unit named in the 21st to 26th diagrams is as early as: Y (8) is different from the seventh to twelfth implementations, and the unit Y(n) is shifted. The memory unit is replaced by a uniform Chinese shift register body T9. Thus, the operation and the function of the seventh to twelfth implementations of the transistor 11 in the form of an electro-crystal can be performed according to the second embodiment of the shift register of the second per-a mode. The first implementation of the example is analogous. The third implementation architecture shows the second actual implementation structure of the shift register fish.

200805243200805243

^ 二理w肌.xW3165PA 器為實質上相等,請參照 施例t第三實施結構之移位暫存 相關敘述。 罝- $ ft55〜π圖,其繪示乃第27圖之移位暫存器 早兀”弟四至第六電路實施方式的詳細電路圖。在第 四=第’Ά方式中之移位暫存科元係分別為第28〜3〇 圖#之^暫^單元之衍生實施方式’其巾獨之處在 於弟四到第施方式之移位暫存器單元係將第Μ〜如圖 移位暫存中之電晶體T9及丁6’分別以電晶體丁及 取代如此’第四料六實施方式巾之移位暫存器單元之 操作及力A係可根據第二貫施例之第_實施架構之移位 暫存器之第二實施方式中之敘述類推得到。 於上述貫施例中,均僅以移位暫存器1〇〇、2〇〇、3〇Q、 400及500均回應於兩個致能時間相互錯開之時序訊號 CLK及CLKB來進行操作為例作說明,然,移位暫存器 100〜500亦可使用三個或三個以上之時序訊號來對其中各 級移位暫存器單元S(n)、U(n)、W(n)、X(n)及Y(n)進行控 制,如第58Α、58Β、第59Α與第59Β所示,第58Α與58Β 圖分別繪示乃第一實施例之第一實施結構之移位暫存器 應用於三個時序訊號的方塊圖與時序訊號波形圖,第59Α 與第59Β圖分別繪示乃第一實施例之第一實施結構之移位 暫存器應用於四個時序訊號的方塊圖與時序訊號波形圖。 由上可知,只要移位暫存器1〇〇〜500中任兩相鄰之移 ——- ^ ..... ....... - , · _ _ _ _ __ … - ' 36^ 二理w muscle.xW3165PA is substantially equal, please refer to the shift staging of the third implementation structure of the example t.罝- $ ft55~π diagram, which is a detailed circuit diagram of the implementation of the fourth to sixth circuit of the shift register of the 27th figure. The shift temporary section in the fourth = 'th' mode The meta-system is the derivative implementation of the 28th to 3rd #图#^^^ unit. The uniqueness of the towel is that the shift register unit of the fourth to the fourth mode will be the first 如图~ The operation of the transistor T9 and the butyl 6' in the memory, and the operation of the shift register unit of the fourth embodiment of the fourth embodiment, and the force A system can be implemented according to the second embodiment. The description of the second embodiment of the shift register of the architecture is obtained by analogy. In the above embodiments, only the shift registers 1〇〇, 2〇〇, 3〇Q, 400, and 500 are responded. The operation is performed by operating the timing signals CLK and CLKB which are mutually offset between the two enable times. However, the shift registers 100 to 500 can also use three or more timing signals to shift the levels. Bit register units S(n), U(n), W(n), X(n), and Y(n) are controlled, as shown in blocks 58Α, 58Β, 59Α, and 59Β, 58th and 5th 8Β The figure shows a block diagram and a timing signal waveform diagram of a shift register stored in a first embodiment of the first embodiment applied to three timing signals, and FIGS. 59 and 59 respectively illustrate the first embodiment. The shift register of the first implementation structure is applied to the block diagram and the timing signal waveform diagram of the four timing signals. As can be seen from the above, as long as any two adjacent shifts of the shift register 1〇〇~500 are- - ^ ..... ....... - , · _ _ _ _ __ ... - ' 36

200805243 . 三達編號:TW3165PA 位暫存器單元之時序端C接收之時序訊號的致能時間為錯 開,且第η級移位暫存器單元之時序端CB與第n+1級移 位暫存器單元之時序端C接收之時序訊號的致能時間亦為 錯開,而可執行與上述實施例實質上相近之操作者皆不脫 離本發明之技術範圍。η為小於或等於m之自然數。 本發明上述實施例所揭露之移位暫存器包括多級移 位暫存斋單元,而各級移位暫存器單元具有一電路節點。 本發明之移位暫存器中之第n級移位暫存器單元係以第 n+1級或第n+2級移位暫存器單元其中之一之電路節點上 之電壓訊號輸入本級移位暫存器來控制其之操作。如此, 本發明上述實施例所揭露之移位暫存器具有輸出負載較 ,及輸出訊號不容易失真之優點。而使得應用本發明上述 貫施例所揭露之移位暫存器之液晶顯示ϋ更具有顯示晝 面之品質較佳。 本發明上述部分貫施例所揭露之移位暫存器更設置 1個,準_單元來—起將輸出喊之訊號位準拉低至 月匕兒壓。如此’當其中一個位準控制單元中之電晶體 本於Γ電壓因應力效應影響而提升,導致其操作異常時, a明上述部分實施例所揭露之移位暫存器可以另外一 广哭準控制單元來將輸出訊號拉低至接地電壓,使移位暫 生誤動作。如此,本發明上述部分實施例所揭露 夕很立存裔更具有可延長移位暫存器單元之使用壽命 之優點。200805243 . Sanda number: The enable time of the timing signal received by the timing terminal C of the TW3165PA bit register unit is staggered, and the timing terminal CB and the n+1th shift of the nth stage shift register unit are temporarily suspended. The enabling time of the timing signal received by the timing terminal C of the memory unit is also staggered, and the operator who can perform substantially the same as the above embodiment does not deviate from the technical scope of the present invention. η is a natural number less than or equal to m. The shift register disclosed in the above embodiment of the present invention includes a multi-stage shift temporary storage unit, and each shift register unit has a circuit node. The nth stage shift register unit in the shift register of the present invention inputs the voltage signal on the circuit node of one of the n+1th stage or the n+2th stage shift register unit. The stage shift register is used to control its operation. As such, the shift register disclosed in the above embodiments of the present invention has the advantages of an output load ratio and an output signal that is not easily distorted. Therefore, the liquid crystal display of the shift register disclosed in the above embodiments of the present invention is preferably of a better quality. The shift register disclosed in the above partial embodiment of the present invention is further provided with one, and the quasi-cell unit pulls the output signal level down to the monthly pressure. Thus, when the transistor in one of the level control units is raised due to the influence of the stress effect, causing the operation to be abnormal, the shift register disclosed in the above embodiments may be additionally crying. The control unit pulls the output signal to the ground voltage to cause the shift to temporarily malfunction. As described above, the above-mentioned partial embodiments of the present invention have the advantage of extending the service life of the shift register unit.

3737

fW3165PA 200805243 —* 綜上所述,雖然本發明已以一較佳實施例揭露如上, 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者,在不脫離本發明之精神和範圍内,當可作各種 之更動與潤飾。因此,本發明之保護範圍當視後附之申請 專利範圍所界定者為準。fW3165PA 200805243 - * In summary, although the invention has been disclosed above in a preferred embodiment, it is not intended to limit the invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

200805243 二達編现.TW3165PA 【圖式簡單說明】 第1圖繪示依照本發明篦一盘m 移位暫存㈣方塊圖/ Ά例之第—實施結構之 第2圖繪示乃第1圖之 。 t+ ^ n 暫存為單元S(n)之第一電 路貝鉍方式的詳細電路圖。 弟3圖繪示乃第2圖中聽/私抑 號時序圖。中移位暫存盗單元S⑻的袓關訊 第4圖繪示乃第1圖 路實施方式的詳細電路圖。料11單元s⑻之第二電 第5圖繪示乃第1 路實施方式的詳細電路圖。暫存器單元s⑻之第三電 第6圖繪示乃篦] 路實施方式的詳細電路^ /位暫存11單元S⑻之第四電 第7圖繪示乃第i圖 伤200805243 二达编现.TW3165PA [Simple diagram of the drawing] Fig. 1 is a diagram showing the second diagram of the implementation of the first embodiment of the first embodiment of the first embodiment of the present invention. It. t+ ^ n is a detailed circuit diagram of the first circuit of the cell S(n). Figure 3 shows the timing diagram of the listening/private suppression in Figure 2. The relay of the medium shift temporary stolen unit S (8) Fig. 4 is a detailed circuit diagram of the first embodiment of the road. The second electric circuit of the unit 11 s (8) Fig. 5 is a detailed circuit diagram of the first embodiment. The third circuit of the register unit s (8) is shown in Fig. 6. The detailed circuit of the embodiment of the circuit ^ / bit temporary storage 11 unit S (8) of the fourth power Figure 7 is the first picture

路㈣方式的詳細電路^移位暫存器單元S⑻之第五電 第8圖繪示乃第lffiI 路實,方式的詳細電路圖。位暫存盗早元S(n)之第六電 第9圖繪示乃第i圖之移办— 路實施方式的詳細電路圖。讀存器單s s⑻之第七電 第10圖繪示乃第1圖之移㈣ 電路式的詳細電路圖。移㈣存器單元_之第八 第11圖繪示乃第10圖之移 ν〇(η)的模韃時序圖。 移位暫存器單元之輸出訊號 ' 圖繪TF依照本發明第—每 - …一 …^ ^ m知例之第二實施結構 39The detailed circuit of the circuit (four) mode ^ the fifth power of the shift register unit S (8) The eighth figure shows the detailed circuit diagram of the lffiI road. The sixth electric power of the temporary storage of the early element S (n) Figure 9 shows the detailed circuit diagram of the implementation of the transfer of the i-th diagram. The seventh circuit of the memory register s s (8) Fig. 10 shows the detailed circuit diagram of the circuit type of the first figure (4). Shift (four) register unit _ eighth Figure 11 shows the timing diagram of the shift ν 〇 (η) in Fig. 10. The output signal of the shift register unit is shown in the second embodiment of the present invention.

TW3165PA 200805243 一迁麵:》儿. 之移位暫存器的方塊圖。 第13圖繪示乃第12圖之移位暫存器單元U(n)之第一 電路實施方式的詳細電路圖。 第14圖繪示乃第12圖之移位暫存器單元U(n)之第二 電路貫施方式的詳細電路圖。 第15圖繪示乃第12圖之移位暫存器單元U(n)之第三 電路實施方式的詳細電路圖。 第16圖繪示乃第12圖之移位暫存器單元U(n)之第四 馨 電路實施方式的詳細電路圖。 第17圖繪示乃第12圖之移位暫存器單元U(n)之第五 電路貫施方式的詳細電路圖。 第18圖繪示乃第12圖之移位暫存器單元U(n)之第六 電路貫施方式的詳細電路圖。 第19圖繪示乃第1圖之移位暫存器單元S(n)之第九 電路實施方式的詳細電路圖。 第20圖繪示乃第1圖之移位暫存器單元S(n)之第十 _ 電路貫施方式的詳細電路圖。 第21圖繪示乃第12圖之移位暫存器單元U(n)之第七 電路實施方式的詳細電路圖。 第22圖繪示乃第12圖之移位暫存器單元U(n)之第八 電路貫施方式的詳細電路圖。 第23圖繪示乃第12圖之移位暫存器單元U(n)之第九 電路實施方式的詳細電路圖。 第24圖繪示乃第12圖之移位暫存器單元U(n)之第十 200805243 二连獅弧· H165PA 電路實施方式的詳細電路圖。 第25圖繪示乃第12圖之移位暫存器單元U(n)之第十 一電路實施方式的詳細電路圖。 第26圖繪示乃第12圖之移位暫存器單元u(n)之第十 二電路實施方式的詳細電路圖。 第27圖繪示乃依照本發明第二實施例之第三實施結 構之移位暫存器的方塊圖。 第28圖繪示乃第27圖之移位暫存器單元w(n)之第一 φ 電路實施方式的詳細電路圖。 第29圖繪示乃第2了圖之移位暫存器單元w(n)之第二 電路實施方式的詳細電路圖。 第30圖繪示乃第27圖之移位暫存 早元W(n)之第 電路實施方式的詳細電路圖 第31圖繪示乃依照本發明第三實施例之笫一實施結 構之移位暫存器的方塊圖。 第3^2圖繪示乃第31圖之移位暫存器單元乂⑻之第一 電路實施方式的詳細電路圖。 =3 _示乃第31圖之移位暫存器單元X⑻之第: 電路貫施方式的詳細電路圖。 5二?繪不乃第31圖之移位暫存器單元X⑻之第: 電路貫加方式的詳細電路圖。TW3165PA 200805243 A moving face: "Children." Block diagram of the shift register. Figure 13 is a detailed circuit diagram showing a first circuit embodiment of the shift register unit U(n) of Figure 12; Fig. 14 is a detailed circuit diagram showing the second circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 15 is a detailed circuit diagram showing a third circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 16 is a detailed circuit diagram showing a fourth embodiment of the shift register unit U(n) of Fig. 12. Fig. 17 is a detailed circuit diagram showing the fifth circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 18 is a detailed circuit diagram showing the sixth circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 19 is a detailed circuit diagram showing a ninth circuit embodiment of the shift register unit S(n) of Fig. 1. Fig. 20 is a detailed circuit diagram showing the tenth _ circuit implementation of the shift register unit S(n) of Fig. 1. Fig. 21 is a detailed circuit diagram showing a seventh circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 22 is a detailed circuit diagram showing the eighth circuit embodiment of the shift register unit U(n) of Fig. 12. Fig. 23 is a detailed circuit diagram showing a ninth circuit embodiment of the shift register unit U(n) of Fig. 12. Figure 24 is a detailed circuit diagram showing an embodiment of the circuit of the second lion arc H165PA of the shift register unit U(n) of Fig. 12; Fig. 25 is a detailed circuit diagram showing an eleventh circuit embodiment of the shift register unit U(n) of Fig. 12. Figure 26 is a detailed circuit diagram showing a twelfth circuit embodiment of the shift register unit u(n) of Fig. 12. Figure 27 is a block diagram showing a shift register of a third embodiment in accordance with a second embodiment of the present invention. Figure 28 is a detailed circuit diagram showing the first φ circuit embodiment of the shift register unit w(n) of Figure 27. Figure 29 is a detailed circuit diagram showing a second circuit embodiment of the shift register unit w(n) of the second figure. FIG. 30 is a detailed circuit diagram showing a circuit embodiment of the shift temporary storage element W(n) of FIG. 27, and FIG. 31 is a schematic diagram showing the shifting of the first embodiment according to the third embodiment of the present invention. The block diagram of the register. Fig. 3(2) is a detailed circuit diagram showing a first circuit embodiment of the shift register unit (8) of Fig. 31. =3 _ shows the shift register unit X (8) of Fig. 31: Detailed circuit diagram of the circuit implementation mode. 5 two? The drawing is not the same as the shift register unit X (8) of Fig. 31: The detailed circuit diagram of the circuit integration mode.

Ϊ:5二f不乃第31圖之移位暫存器單元X⑻之第E 電路爲施方式的詳細電路圖。 第36圖1 會示乃第31圖之移位暫存器單元X⑻之第5Ϊ: 5 2 f is the detailed circuit diagram of the E circuit of the shift register unit X (8) of Fig. 31. Figure 36 Figure 1 shows the fifth of the shift register unit X (8) of Figure 31

TW3165PA 200805243 *迁/1肺7/几· 電路實施方式的詳細電路圖。 第37圖繪示乃第31圖之移位暫存器單元X(n)之第六 電路實施方式的詳細電路圖。 第38圖繪示乃第31圖之移位暫存器單元X(n)之第七 電路實施方式的詳細電路圖。 第39圖繪示乃第31圖之移位暫存器單元X(n)之第八 電路實施方式的詳細電路圖。 第40圖繪示乃依照本發明第三實施例之第二實施結 ⑩ 構之移位暫存器的方塊圖。 第41圖繪示乃第40圖之移位暫存器單元Y(n)之第一 電路貫施方式的詳細電路圖。 第42圖繪示乃第40圖之移位暫存器單元Υ(η)之第二 電路實施方式的詳細電路圖。 第43圖繪示乃第40圖之移位暫存器單元Υ(η)之第三 電路實施方式的詳細電路圖。 第44圖繪示乃第40圖之移位暫存器單元Υ(η)之第四 馨電路實施方式的詳細電路圖。 第45圖繪示乃第40圖之移位暫存器單元Υ(η)之第五 電路貫施方式的詳細電路圖。 第46圖繪示乃第40圖之移位暫存器單元Υ(η)之第六 電路實施方式的詳細電路圖。 第47圖繪示乃第31圖之移位暫存器單元Χ(η)之第九 電路實施方式的詳細電路圖。 第48圖繪示乃第31圖之移位暫存器單元Χ(η)之第十 42 200805243—TW3165PA 200805243 * Migration / 1 lung 7 / several · Detailed circuit diagram of the circuit implementation. Figure 37 is a detailed circuit diagram showing a sixth circuit embodiment of the shift register unit X(n) of Figure 31. Figure 38 is a detailed circuit diagram showing a seventh circuit embodiment of the shift register unit X(n) of Figure 31. Fig. 39 is a detailed circuit diagram showing an eighth circuit embodiment of the shift register unit X(n) of Fig. 31. Figure 40 is a block diagram showing a shift register of a second embodiment of the third embodiment of the present invention. Fig. 41 is a detailed circuit diagram showing the first circuit embodiment of the shift register unit Y(n) of Fig. 40. Figure 42 is a detailed circuit diagram showing a second circuit embodiment of the shift register unit Υ(η) of Figure 40. Fig. 43 is a detailed circuit diagram showing a third circuit embodiment of the shift register unit Υ(η) of Fig. 40. Figure 44 is a detailed circuit diagram showing a fourth embodiment of the shift register unit Υ(η) of Fig. 40. Fig. 45 is a detailed circuit diagram showing the fifth circuit of the shift register unit Υ(η) of Fig. 40. Fig. 46 is a detailed circuit diagram showing a sixth circuit embodiment of the shift register unit Υ(η) of Fig. 40. Fig. 47 is a detailed circuit diagram showing a ninth circuit embodiment of the shift register unit Χ(η) of Fig. 31. Figure 48 is a diagram showing the tenth portion of the shift register unit Χ(η) of Fig. 31, 200805243—

一心卿屬rW3165PA 電路實施方式的詳細電路圖。 第49圖繪示乃第31圖之移位暫存器單元Y(n)之第七 電路實施方式的詳細電路圖。 第50圖繪示乃第31圖之移位暫存器單元Υ(η)之第八 電路實施方式的詳細電路圖。 第51圖繪示乃第31圖之移位暫存器單元Υ(η)之第九 電路貫施方式的詳細電路圖。 第52圖繪示乃第31圖之移位暫存器單元Υ(η)之第十 •電路實施方式的詳細電路圖。 第53圖繪示乃第31圖之移位暫存器單元Υ(η)之第十 一電路實施方式的詳細電路圖。 第54圖繪示乃第31圖之移位暫存器單元Υ(η)之第十 二電路實施方式的詳細電路圖。 第55圖繪示乃第27圖之移位暫存器單元W(n)之第四 電路實施方式的詳細電路圖。 第56圖繪示乃第27圖之移位暫存器單元W(n)之第五 ® 電路實施方式的詳細電路圖。 第57圖繪示乃第27圖之移位暫存器單元W(n)之第六 電路實施方式的詳細電路圖。 第58A圖與第58B圖分別繪示乃第一實施例之第一 實施結構之移位暫存器使用於三個時序訊號的方塊圖與 時序訊號波形圖。 第59A圖與第59B圖分別繪示乃第一實施例之第一 實施結構之移位暫存器使用於四個時序訊號的方塊圖與 43 2〇〇8〇H猶 1 ? 時序訊號波形圖。 【主要元件符號說明】 100、200、300、400、500 :移位暫存器 S(l)〜S(m)、U(l)〜U(m)、W(l)〜W(m)、X(l)〜X(m) Y(l)〜Y(m) ··移位暫存器單元 IN :輸入端 OUT ··輸出端 • RT、RT1、RT2 :控制端 C :時序端 CB :反向時序端 PI、P2 :節點 ST^V :起始訊號 Vo(l)〜Vo(m):輸出訊號 CLK、CLKB :時序訊號 VDD、VSS :電壓 ⑩ T1〜T13、T6’、T9’ ··電晶體A detailed circuit diagram of the implementation of the rW3165PA circuit. Fig. 49 is a detailed circuit diagram showing a seventh circuit embodiment of the shift register unit Y(n) of Fig. 31. Fig. 50 is a detailed circuit diagram showing an eighth circuit embodiment of the shift register unit Υ(η) of Fig. 31. Fig. 51 is a detailed circuit diagram showing the ninth circuit embodiment of the shift register unit Υ(η) of Fig. 31. Figure 52 is a detailed circuit diagram showing a tenth circuit embodiment of the shift register unit Υ(η) of Figure 31. Fig. 53 is a detailed circuit diagram showing an eleventh circuit embodiment of the shift register unit Υ(η) of Fig. 31. Fig. 54 is a detailed circuit diagram showing a twelfth circuit embodiment of the shift register unit Υ(η) of Fig. 31. Fig. 55 is a detailed circuit diagram showing a fourth circuit embodiment of the shift register unit W(n) of Fig. 27. Figure 56 is a detailed circuit diagram showing a fifth embodiment of the circuit of the shift register unit W(n) of Figure 27. Fig. 57 is a detailed circuit diagram showing a sixth circuit embodiment of the shift register unit W(n) of Fig. 27. Fig. 58A and Fig. 58B are respectively a block diagram and a timing signal waveform diagram of the shift register used in the first embodiment of the first embodiment for three timing signals. FIG. 59A and FIG. 59B respectively show a block diagram of the four shift timings used by the shift register of the first embodiment of the first embodiment, and a 43 2 〇〇 8 〇 H 1 1 timing signal waveform diagram. . [Description of main component symbols] 100, 200, 300, 400, 500: shift register S(l)~S(m), U(l)~U(m), W(l)~W(m) , X(l)~X(m) Y(l)~Y(m) ··Shift register unit IN: input terminal OUT··output terminal • RT, RT1, RT2: control terminal C: timing terminal CB : Reverse timing terminal PI, P2: Node ST^V: Start signal Vo(l)~Vo(m): Output signal CLK, CLKB: Timing signal VDD, VSS: Voltage 10 T1~T13, T6', T9' ··Optocrystal

Vcl(l)〜Vcl(m)、Vc2(l)〜Vc2(m):控制訊號 202a、202b :驅動單元 204a、204b、204c :位準控制單元 302 :偏壓單元 △V:差值電壓Vcl(l) to Vcl(m), Vc2(l) to Vc2(m): control signals 202a, 202b: drive unit 204a, 204b, 204c: level control unit 302: bias unit ΔV: difference voltage

Vthl :臨界電壓 TP1、TP2、TP3 :時序週期 200805243Vthl: threshold voltage TP1, TP2, TP3: timing cycle 200805243

-LmmwL· * IW3165PA-LmmwL· * IW3165PA

Cl :電容 Cgs :寄生電容 10、11 :曲線Cl : Capacitance Cgs : Parasitic capacitance 10, 11 : Curve

Claims (1)

200805243 二理»m · Πν:31ό5ΡΑ 申請專利範圍: 1. 種H暫存器’具有複數級彼此串聯連接之移位 暫存„„早7〇’其巾該f n級移位暫存器單元輸輸 唬,該輸出訊號為第n+1級移位暫存器單元之一輸入訊° 娩,η為自然數,該第n級移位暫存器單元包括: 一第一位準控制單元,用以提供一第一時序訊號 輸出端; 單元,㈣第—㈣㈣單元之輸入端偶 =-第-節點’該第一節點之電壓為一第一控制訊號, 該弟-驅動單元用以回應於該輸入訊號之前緣伽加 導通該第-位準控鮮元,並用以於—第二控制訊號之位 準鬲於一第三控制訊號之位準時關閉該第一位準控制單 7〇, 端; 第一位準控制單元,用以提供一第一電壓至該輸出 -第二驅動單元,用以回應於該第—控制訊號之前緣 關閉該第二位準控制單元,並回應於該第一控制訊號之後 緣(Rear Edge)來導通該第二位準控制單元;以及 弟二位準控制早元’用以回應於 一第一電晶體(Transistor),閘極(Gate)第n+2級移位 暫存器單元之第一控制訊號之前緣來提供該第一電壓至 該輪出端。 2·如申請專利範圍第1項所述之移位暫存器,其中該 第二位準控制單元包括:接收第n+2級移位暫存器單元之 46 200805243 ^ 二;^細肌· TW3165PA • 第一控制訊號,第一源極(Source)/汲極(Drain)耦接至該輪 出端,第二源極/汲極接收該第一電壓,該第一電晶體回應 於» 11+2、級移位暫存器單元之第一控制訊號之前緣來提供 該第一電壓至該輸出端。 3·如申請專利範圍第2項所述之移位暫存器,其中該 第二位準控制單元更包括一第二電晶體,閘極接收一第二 時序訊號,第-源極/沒極減至該輸出端,第二源極破 極接收該第-電壓,該第二電晶體回應於該第二時序訊號 之上升緣(RisingEdge)來提供該第—電壓至該輪出端;°〜 其中,該第二時序訊號之致能時間與該第一時序訊赛 之致能時間係為錯開。 ° 4·如申請專利範圍» i項所.述之移位暫存器,盆中节 第-驅動單元包括-第三電晶體,閘極接收該第二控制訊 破’第-源極/祕_至該第—節點,第二源極&極接 收該第三控制訊號。 ^ 5·如申請專利範圍第4項所述之移位暫存器,其中該 第二及該第三控制訊號係分別為第n+2級移位暫存器單^ 之第一控制訊號及該第一電壓。 ^ 6.如申請專利範圍第5項所述之移位暫存器中該 第-驅動單元更包括-第四電晶體,閘極接收該第^時^ 訊號,第-祕接至該第—節點,第二源極/没極 接收該輸入訊號。 ^ 7‘如申請專利範圍第4項所述之移位暫存器,其中該 第二及該第三控制訊號係分別為第n+1級移位暫存器單^ 47 200805243 二肺抓· TW3165PA 參 之第一控制訊號及該第一時序訊號。 8.如申請專利範圍第7項所述之移位暫存器,其中該 弟一驅動單元更包括一第四電晶體,閘極接收該第二時序 訊號,第一源極/汲極耦接至該第一節點,第二源極/汲極 接收該輸入訊號。 9·如申請專利範圍第4項所述之移位暫存器,其中該 第二及該第三控制訊號係分別為該第二時序訊^及該輸ϋ 入訊號。 • 10·如申請專利範圍第9項所述之移位暫存器,其中 該第一驅動單元更包括一第五電晶體,閘極接收第n+1級 移位暫存器單元之輸出訊號,第一源極/汲極端耦接至該第 一節點,第二源極/汲極接收該第一電壓。 11·如申請專利範圍第4項所述之移位暫存器,其中 4弟一及違弟二控制訊號係分別為第η + 1級移位暫存哭 單元之輸出訊號及該第一電壓。 12. 如申请專利範圍第1項所述之移位暫存器,立中 參該第-驅動單元更包括一第六電晶體’閘極接收該輸入訊 號,第一源極/汲極接收一第二電壓,第二源極/汲極耦接 至該第一節點。 13. 如申請專利範圍第1項所述之移位暫存器,其中 該第二驅動單元包括一偏壓單元,與該第二位準控制/單元 之輸入端耦接於一第二節點,該第二節點之電壓為一第四 控制訊號’該偏壓單以回應於該第—控觀號 來控制該第四控制訊號之位準以關閉該第二位準控制單 48 200805243 一 % 二建嘛现· TW3165PA .=,並=應於該第—控制訊號之後緣來控制該第 號之位準以開啟該第二位準控制單元。 1二制訊 u· mu專㈣13項所述之移 該第二驅動單元更包括:廿的其中 、第七電晶體,閘極接收該第二時序訊號,第― /沒極接收該第二電廢,箆一 源極 號。 弟一源極/汲極接收該第四控制訊 <15.如申請專利範圍第〗項所述之移位暫存器,1 該弟一位準控制單元包括一第八曰, ^ β制U卢,篦、Β 士 , 日日-《極接收該第一 控制减Μϋ/汲極魏該第―時序訊號嗜 極/汲極耦接至該輸出端。 弟一源 1 一6.如申料·圍第丨項所述之移位暫存器, s亥弟一位準控制單元包括一第恭曰靜 八 批制呷硖馀、 包日日體,閘極接收該第四 &制ϋ,弟-源極/沒極輪接輪 極接收該第一電壓。 出鳊弟一源極/汲 1 7·如申清專利範圍第1項 。 該些級移位暫存器單元中之一第一級移位暫存中 接收^^號’並以該起始訊號做為該輸入;號。,、 該些移位暫存器單元中任兩j所迷之私位暫存器,其中 心·二 相鄰之移位暫存器單元所接 收之遠弟一 ¥序訊號之致能時間係為錯開,· 其中’第II級移位暫存器單元接收之第二時,卢 致能時間與第n+1級移位暫存哭 序说 之致能時間亦為錯開。 早疋接收之第一時序訊號 49 2008懸二二… — - 19·如申請專利範圍第i項所述之移位暫存器,其中 第n+1級移位暫存器單元係接收一第三時序訊號及該第一 時序訊號,其中該第三時序訊號之致能時間與該第一及該 第二時序訊號之致能時間係為錯開。 20·如申請專利範圍第1項所述之移位暫存器,其中 1 n+1級移位暫存器單元係接收一第三時序訊號及一第四 時序訊號,其中該第一、該第二、該第三及該第四時序訊 號之致能時間均為錯開。 # 21·^ —種移位暫存器,具有複數級彼此串聯連接之移 位暫存,單70,其中該第》級移位暫存器單元輸出一輸出 虎,忒輪出訊號為第n+1級移位暫存器單元之一輸入訊 k ’ η為>自然數,該第^級移位暫存器單元包括: 輪出:第—位準控制單元’用以提供一第一時序訊號至- 接二第一位準控制單元之輸入端偶 該第-二動Ζ用之電壓為-第-控義^ 導通該第—位準控制前緣(F_t_ ;高於一第三控制訊號之位準時關閉 端; 第二位準控制單元 一第二驅動單元, 關閉該第二位準控制單元 用以提供一第一電壓至該輸出 第一控制訊號之前緣 並回應於該第一控制訊號之後 50200805243 二理»m · Πν:31ό5ΡΑ Patent application scope: 1. The H register has a shift register with multiple levels connected to each other in series „„早7〇' its towel fn-level shift register unit In the output, the output signal is one of the input of the n+1th shift register unit, and η is a natural number, and the nth stage shift register unit includes: a first level control unit, For providing a first timing signal output terminal; unit, (4) the input terminal of the (-)th (four) (four) unit is even--the first node, the voltage of the first node is a first control signal, and the brother-drive unit is configured to respond The first level control element is turned on by the gamma of the input signal, and is used to close the first level control unit 7 when the second control signal is at the level of a third control signal. a first quasi-control unit for providing a first voltage to the output-second driving unit for closing the second level control unit in response to the leading edge of the first control signal, and responding to the first a control edge (Rear Edge) to turn on the second level The unit and the second-order quasi-control element are provided in response to a first transistor (Transistor), the gate of the first n+2 shift register unit of the gate (the gate) The first voltage is to the wheel end. 2. The shift register according to claim 1, wherein the second level control unit comprises: receiving the n+2th shift register unit 46 200805243 ^ 2; TW3165PA • a first control signal, a first source/drain is coupled to the wheel, and a second source/drain receives the first voltage, the first transistor responding to the »11 +2, the first control signal leading edge of the stage shift register unit provides the first voltage to the output terminal. 3. The shift register according to claim 2, wherein the second level control unit further comprises a second transistor, the gate receives a second timing signal, and the source-source/no-pole Subtracting to the output end, the second source is ruptured to receive the first voltage, and the second transistor is responsive to the rising edge of the second timing signal to provide the first voltage to the wheel output; The enabling time of the second timing signal is offset from the enabling time of the first timing game. ° 4, as claimed in the scope of application of the invention, the shift register, the middle drive unit of the basin includes a third transistor, and the gate receives the second control signal to break the 'first source/secret _To the first node, the second source & pole receives the third control signal. The shift register according to claim 4, wherein the second and third control signals are respectively the first control signal of the n+2th shift register unit and The first voltage. ^ 6. The shifting register according to claim 5, wherein the first driving unit further comprises a fourth transistor, the gate receiving the second signal, and the first key is connected to the first The node, the second source/no pole receives the input signal. ^ 7' The shift register according to claim 4, wherein the second and the third control signals are respectively the n+1th shift register unit. The TW3165PA participates in the first control signal and the first timing signal. 8. The shift register of claim 7, wherein the driving unit further comprises a fourth transistor, the gate receiving the second timing signal, and the first source/drain coupling To the first node, the second source/drain receives the input signal. 9. The shift register of claim 4, wherein the second and third control signals are the second timing signal and the input signal. The shift register according to claim 9, wherein the first driving unit further comprises a fifth transistor, and the gate receives the output signal of the n+1th shift register unit. The first source/drain is coupled to the first node, and the second source/drain receives the first voltage. 11. The shift register according to item 4 of the patent application scope, wherein the 4th and 1st control signals are respectively the output signal of the η + 1 shift temporary storage crying unit and the first voltage . 12. The shift register according to claim 1, wherein the first drive unit further comprises a sixth transistor, the gate receives the input signal, and the first source/drain receives the input signal. The second voltage, the second source/drain is coupled to the first node. 13. The shift register of claim 1, wherein the second driving unit comprises a biasing unit, and the input end of the second level control unit is coupled to a second node, The voltage of the second node is a fourth control signal 'the biasing unit controls the level of the fourth control signal in response to the first control flag to close the second level control list 48 200805243 one % two The TW3165PA .=, and = the level of the first control signal should be controlled to open the second level control unit. The second driving unit further includes: a seventh transistor, a gate receiving the second timing signal, and a ―/ pole receiving the second power. Waste, a source of the source. The first source/bungee receives the fourth control message <15. The shift register as described in the patent application scope item, 1 the first quasi-control unit includes an eighth unit, ^β system U Lu, 篦, Β,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,弟一源1一6. As for the shift register described in the application of the article, the shaidi quasi-control unit includes a tribute to the eight batches of 曰, 包日日, The gate receives the fourth & 弟, and the source-source/polar-polar wheel receives the first voltage. A source of a younger brother / 汲 1 7 · such as Shen Qing patent scope item 1. One of the first stage shift register units receives the ^^' in the first stage shift register and uses the start signal as the input; , the private register of any two of the shift register units, and the enabling time of the remote register received by the center and the two adjacent shift register units In order to stagger, · In the second stage of the reception of the second-stage shift register unit, the enabling time of the Lu-energy time and the n+1-th shift temporary suspension is also staggered. The first timing signal received by the early release of the first time is the shift register according to the item i of claim 1, wherein the n+1th shift register unit receives one The third timing signal and the first timing signal, wherein the enabling time of the third timing signal and the enabling time of the first and second timing signals are staggered. The shift register according to claim 1, wherein the 1 n+1 shift register unit receives a third timing signal and a fourth timing signal, wherein the first Second, the enabling times of the third and the fourth timing signals are all staggered. # 21·^ — A shift register having a shift register in which a plurality of stages are connected in series, a single 70, wherein the first stage shift register unit outputs an output tiger, and the round signal is n One of the +1 stage shift register unit inputs k ' η is a natural number, and the first stage shift register unit includes: a round out: a first level control unit 'to provide a first The timing signal is connected to the input terminal of the first level control unit. The voltage of the first and second motions is -the first control. The first leading edge of the control level is turned on (F_t_; higher than a third The second level of the control signal is a second driving unit, and the second leveling unit is turned off to provide a first voltage to the front edge of the output first control signal and is responsive to the first After the control signal 50 200805243 二s細m · TW3165PA 緣(Rear Edge)來導通該第二位準控制單元;以及 一第二位準控制單元,用以回應於第n+1級移位暫存 器單元之第一控制訊號來提供該第一時序訊號之低電壓 位準至該輸出端。 22.如申請專利範圍第21項所述之移位暫存器,其中 5亥弟二位準控制单元包括:200805243 two s fine m · TW3165PA edge (Rear Edge) to turn on the second level control unit; and a second level control unit for responding to the first control of the n+1th stage shift register unit The signal provides a low voltage level of the first timing signal to the output. 22. The shift register according to claim 21, wherein the 5th position control unit comprises: 一第一電晶體(Transistor),閘極(Gate)接收第㈣級 移位暫存器單元之第—控制訊號’第—源極(s_e)/没極 (Drain)耦接至該輪出端,第二源極/汲極接收該第一時序訊 號,該第一電晶體用以於第n+1級移位暫存器單元之第一 控制訊號之位準高於該第一時序訊號之位準時提供該第 一時序訊號之低電壓位準至該輸出端。 / 2 3.如申請專利範圍第2 2項所述之移位暫存器,其中 該第三位準控料元更包括―第二電晶體,閘極接收二第 二時序訊號,第一源極/汲極耦接至該輸出端,第二源極 沒極接收該第-電壓,該第二電晶體回應於該第 號之上升緣卿ng Edge)來提供該第—電壓至該輸出端j 其中,該第二時序訊號之致能時間與該第— 之致能時間係為錯開。 序虎 源極Λ及極 25.如申請專利範圍第24項所述之移位暫存器, — ' …―一… I 24.如申請專利範圍帛21項所述之移仅暫存哭,呈 該第-驅動單元包括-第三電晶體’閘極接收該第°一二在 訊號,第一源極/汲極耦接至該第一節點,第―工, 接收該第三控制訊號 51a first transistor (Transistor), a gate (Gate) receiving a first (fourth) stage shift register unit - a control signal 'first source (s_e) / no drain (Drain) coupled to the wheel end The second source/drain receives the first timing signal, and the first transistor is used for the first control signal of the n+1th shift register unit to be higher than the first timing The signal bit provides the low voltage level of the first timing signal to the output on time. / 2 3. The shift register according to claim 2, wherein the third level control element further comprises a second transistor, the gate receives two second timing signals, and the first source a pole/drain is coupled to the output terminal, a second source pole receives the first voltage, and the second transistor responds to the rising edge of the number to provide the first voltage to the output terminal j wherein the enabling time of the second timing signal and the enabling time of the first timing are staggered. The source of the tiger is extremely extreme and extremely 25. As described in the scope of claim 24, the shift register, - ' ... - a... I 24. As described in the scope of patent application 帛 21, only temporary crying, The first drive unit includes a third transistor, and the first source/drain is coupled to the first node, and the first control signal is received. 2〇〇8°1243rw3165PA 該第二及該第三控制訊號係分別為第n+1級移位暫存器單 元之第一控制訊號及該第一時序訊號。 26·如申凊專利範圍第25項所述之移位暫存器,其中 該第一驅動單元更包括一第四電晶體,閘極接收該第二時 序訊號,第一源極/汲極耦接至該第一節點,第二源極/汲 極接收該輸入訊號。 27·如申請專利範圍第24項所述之移位暫存器,其中 談第二及該第三控制訊號係分別為第n+2級移位暫存器單 元之第一控制訊號及該第一電壓。 28·如申請專利範圍第27項所述之移位暫存器,其中 該第一驅動單元更包括—第四電晶體,閘極接收該第^時 序訊號,第-源極/没極搞接至該帛一節點,第二源極織 極接收該輸入訊號。 #29·如申請專利範圍第24項所述之移位暫存器,其今 =第二及該第三控制訊號係分別為該第二時序訊號及該 輸入訊號。 ^30·如申請專利範圍第29項所述之移位暫存器,其弓 巧元更包括一第五電晶體,閘極接收第州级 一4子:早:之輸出訊號’第-源極/汲極端耦接至該s 即點,弟二源極/汲極接收該第一電壓。 如申請專利範圍第24項所述之移位暫存器,呈弓 該弟二及該第三控制訊號係分 單元之輸出訊號及該第-電壓叫弟…級移位暫存器 52 2008052432〇〇8°1243rw3165PA The second and third control signals are respectively the first control signal of the n+1th stage shift register unit and the first timing signal. The shift register according to claim 25, wherein the first driving unit further comprises a fourth transistor, the gate receives the second timing signal, and the first source/drain coupling Connected to the first node, the second source/drain receives the input signal. The shift register according to claim 24, wherein the second control signal is the first control signal of the n+2 shift register unit and the first A voltage. The shift register according to claim 27, wherein the first driving unit further comprises a fourth transistor, the gate receives the second timing signal, and the first source/source is connected. To the other node, the second source weave receives the input signal. #29. The shift register according to claim 24, wherein the second and the third control signals are the second timing signal and the input signal, respectively. ^30· If the shift register is described in claim 29, the arrow is further included with a fifth transistor, and the gate receives a state-level 4: early: output signal 'first-source The pole/汲 pole is coupled to the s point, and the second source/drain receives the first voltage. For example, the shift register described in claim 24 of the patent application is the output signal of the second and third control signal subsystems and the first-voltage step-by-step shift register 52 200805243 二连緬现.rW3165PA 該第-驅動單元更包括—第六電晶體,閘極接收該輸入訊 號,第一源極/汲極接收一第二電壓,第二源極/汲極耦接 至該第一節點。 33·如申請專利範圍第21項所述之移位暫存器,其中 该第二驅動單元包括一偏壓單元,與該第二位準控制單元 之輸入端耦接於一第二節點,該第二節點之電壓為一第四 控制訊號,該偏壓單元用以回應於該第一控制訊號之前緣 來控制該第四控制訊號之位準以關閉該第二位準控制單 元’並回應於該第一控制訊號之後緣來控制該第四控制訊 旒之位準以開啟該第二位準控制單元。 34·如申请專利範圍第33項所述之移位暫存器,其中 «亥弟一驅動單元更包括: 、一第七電晶體,閘極接收該第二時序訊號,第一源極 //及極接收該第二電壓,第二源極/汲極接收該第四控訊 號。 σ ^ 士申明專利範圍第21項所述之移位暫存器,其 2::準:制單元包括—第八電晶體’閘極接收該第 fia旒,弟—源極/汲極接收該第一時序訊號, _ 極/汲極耦接至該輸出端。 弟— 36.如申請專利範圍第^項所述之移位暫存器,其 :制;Si制單元包括―第九電晶體’閘極接收該第 極接收織極_至該輸出端,第, 〜 ·如申凊專利範圍第21項所述之移位暫存器 ——- 53The second drive unit further includes a sixth transistor, the gate receives the input signal, the first source/drain receives a second voltage, and the second source/drain is coupled to the The first node. The shift register according to claim 21, wherein the second driving unit comprises a biasing unit, and the input end of the second level control unit is coupled to a second node, The voltage of the second node is a fourth control signal, and the biasing unit is configured to control the level of the fourth control signal in response to the leading edge of the first control signal to close the second level control unit and respond to The trailing edge of the first control signal controls the level of the fourth control signal to activate the second level control unit. 34. The shift register according to claim 33, wherein the «Haidi drive unit further comprises: a seventh transistor, the gate receives the second timing signal, the first source // The pole receives the second voltage, and the second source/drain receives the fourth control signal. σ ^ 士 申 申 申 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利The first timing signal, _ pole/drain is coupled to the output. - 36. The shift register as described in claim 4, wherein: the Si unit includes a "ninth transistor" gate receiving the pole receiving web _ to the output, , ~ · Shift register as described in claim 21 of the patent scope - 53 200805243一一二 二违顧肌.丁W3165PA 該些級移”存H單財之1—級独暫㈣單 接收一起始訊號,並㈣料訊號做為該輪人訊號 38. 如申料職圍第21項所狀移㈣㈣ 該些,單元中任兩相鄰之移位暫存器單“接 收之該第-時序訊號之致料間係為錯開; :中第na移位暫存$單元接收之第二時序^之 致能日寸間與第n+1級移位暫存器單元接收之第_時序^ 之致能時間亦為錯開。 守斤afl说 39. 如申請專利範圍第21項所述之移存哭立 第二級移位暫存器單元係接收—第三時序訊號以 Ϊ序3=三時序訊號之致能時間與該第-及該 弟一日寸序汛唬之致忐時間係為錯開。 _ 40.如申請專利範圍第21項所述之移位暫存器,其中 苐η+1級移位暫存哭置士总位 ^ ’、 士 % οα早兀係接收一弟三時序訊號及一第四 化杨虎’其中該第-、該第二、該第三及該第四時序訊 號之致能_均為錯^ 41. _種移位暫存器,具有複數級彼此串聯連接之移 位暫存窃單兀’其中該第n級移位暫存器單元輪出一輸出 訊號’該輸㈣號為第η+i級移位暫存H單元之一輸入都 號’ n為—自然數,該第η級移位暫存器單元包括: 一第一位準控制單元,用减供—第—時序訊號至一 輸出端; 一 ί二,動單元,與該第一位準控制單元之輸入端€ 接於第1點,該第一節點之電壓為一第一控制訊號 54 200805J43tw316spa .“ :J — 二…,乂兰士ή:—:-——-二二-二:- • -: 一·,:二’…:一 * ~ ~ ~ 該第一驅動單7〇用以回應於該輸入訊號之前緣(Fr〇nt Edge) 導通該第一位準控制單元,並用以回應於第n+2級移位暫 存器單7G之第一控制訊號之前緣來關閉該第一位準控制 單元; 一第二位準控制單元,用以提供一第一電壓至該輸出 端;以及 一第二驅動單元,用以回應於該第一控制訊號之前緣 關閉該第二位準控制單元,並回應於該第一控制訊號之後 • 緣(Rear Edge)來導通該第二位準控制單元。 42·如申請專利範圍第41項所述之移位暫存器,其中 該弟一驅動單元包括一第—電晶體(Transist〇r),閘極(Gate) 接收第n+2級移位暫存器單元之第—控制訊號,第一源極 (Source)/没極(Drain)搞接至該第一節點,第二源極/没極接 收該第一電壓’該第三電晶體用以回應於第n+2級移位暫 存器單元之第一控制訊號之前緣來提供該第一電壓至談 第一節點。 43·如申請專利範圍第42項所述之移位暫存器,其中 該第一驅動單元更包括一第二電晶體,閘極接收一第二時 序訊號’第一源極/汲極搞接至該第一節點,第二源極/汲 極接收該輸入訊號,該第二電晶體用以回應於該第二時序 訊號之上升緣(Rising Edge)來提供該輪入訊號之之低電壓 位準至該第一節點; 其中,該第二時序訊號之致能時間與該第一時序訊號 之致能時間係為錯開。 '"- . — . 一. τ — · - - - —. 一 - —* — _ ——、 _ —一 55 200805243 … • —mmm · TW3165PA • 44·如申請專利範圍第41項所述之移位暫存器,其中 更包括一第三位準控制單元,用以回應於第n+1級移ς暫 存器單元之輸出訊號之前緣來提供該第一電壓至該輸出 端,該第三位準控制單元包括·· 一第二電晶體,閘極接收第η+1級移位暫存器單元之 輸出訊號,第一源極/汲極耦接至該輸出端,第二源極/汲 極接收該第一電磨。 ^ 45·如申請專利範圍第44項所述之移位暫存器,其中 該第三位準控制單元更包括·· /、 、一第四電晶體,閘極接收一第二時序訊號,第一源極 及極搞接至該輸出端,第二源極/没極接收該第一電壓,° ,第二電晶體回應於該第二時序訊號之上升緣來提H 第一電壓至該輸出端。 人 46·如申請專利範圍第41項所述之移位暫存器,其中 该第二驅動單元包括一偏壓單元,與該第二位準控制單元 • t輸二端耦接於一第二節點,該第二節點之電壓為—第= &制Λ號,該偏壓單元用以回應於該第一控制訊號之 來控制該第四控制訊號之位準以關_第二位準控制單、、 凡,亚回應於該第一控制訊號之後緣來控制 號之位準以開啟該第二位準控制單元。制讯 ▲ /7·如申請專利範圍第46項所述之移位暫存器,复φ 5玄弟一驅動單元更包括: * 、一第六電晶體,閘極接收該第二時序訊號,第一源極 //及極接收該第二電壓,第二源極/汲極接收該第四控制訊 56 rtfrrr 20080_5243TW3165PA 如申料鄉圍第4i項所述之移㈣存器, 該弟-位準控制單元包括―第七電晶體,閘極接㈣第一 控制訊號’第-源極你極接收該第—時序訊號,該^ 極/汲極耦接至該輪出端。 Λ弟一源 49.如申請專利範圍第41項所述之移位暫存器,200805243 one 12 two violation of the muscle. Ding W3165PA These levels shift "save H single wealth 1 - level single temporary (four) single to receive a start signal, and (4) material signal as the round of people signal 38. Item 21 (4) (4) In this case, any two adjacent shift register registers in the unit "the receiving of the first-order timing signal is staggered; : the middle na shift temporary storage unit receiving The enabling time of the second timing sequence and the first _ timing ^ received by the n+1th shift register unit are also staggered.守斤 afl said 39. As described in the scope of claim 21, the second-level shift register unit receives the third-order signal to sequence 3 = three timing signals and the enable time The time of the first and the younger brothers was staggered. _ 40. The shift register described in claim 21, wherein the 苐η+1 shift temporary storage of the crying totals ^ ', 士% οα early 接收 receives a younger three timing signals and a fourth huayanghu, wherein the first, the second, the third, and the fourth timing signal are all _ 41. _ kinds of shift register, the plurality of stages are connected in series with each other Shifting the temporary sneak 兀 'where the nth stage shift register unit rotates an output signal 'the input (4) number is the η+i level shift temporary storage H unit one input number 'n is - The natural number, the nth stage shift register unit comprises: a first level control unit, using a subtraction-first-order signal to an output; a second, a moving unit, and the first level control The input end of the unit is connected to the first point, and the voltage of the first node is a first control signal 54 200805J43tw316spa. " :J - 2..., 乂兰士ή:-:---二二二二:- • -: 一·,:二'...:一*~~~ The first driver 7〇 is used to turn on the first bit in response to the leading edge of the input signal (Fr〇nt Edge) a control unit, configured to close the first level control unit in response to a leading edge of the first control signal of the n+2 stage shift register 7G; a second level control unit for providing a first a voltage is applied to the output terminal; and a second driving unit is configured to turn off the second level control unit in response to the leading edge of the first control signal, and to be turned on in response to the first control signal (Rear Edge) The second level control unit. 42. The shift register according to claim 41, wherein the driving unit comprises a first transistor (Transist〇r), and a gate (Gate) receiving a first control signal of the n+2 stage shift register unit, a first source/drain is connected to the first node, and a second source/no pole receives the first voltage The third transistor is configured to provide the first voltage to the first node in response to the leading edge of the first control signal of the n+2th stage shift register unit. 43. As claimed in claim 42 The shift register, wherein the first driving unit further comprises a second transistor, the gate Receiving a second timing signal, the first source/drain is connected to the first node, and the second source/drain receives the input signal, and the second transistor is configured to respond to the rise of the second timing signal The Rising Edge provides a low voltage level of the round signal to the first node; wherein the enabling time of the second timing signal and the enabling time of the first timing signal are staggered. "- . — . I. τ — · - - - —. 一 — — — — _ ——, _ — _ 55 200805243 ... • —mmm · TW3165PA • 44· Move as described in item 41 of the patent application a bit register, further comprising a third level control unit for providing the first voltage to the output end in response to the leading edge of the output signal of the n+1th stage shift register unit, the third The level control unit includes a second transistor, the gate receives an output signal of the n+1th shift register unit, the first source/drain is coupled to the output, and the second source/ The bungee receives the first electric grinder. The shift register according to claim 44, wherein the third level control unit further comprises a ···, a fourth transistor, and the gate receives a second timing signal, a source and a pole are connected to the output terminal, and the second source/no pole receives the first voltage, and the second transistor responds to the rising edge of the second timing signal to extract the first voltage to the output. end. The shift register according to claim 41, wherein the second driving unit comprises a biasing unit coupled to the second level of the second level control unit a node, the voltage of the second node is a -> amp; the bias unit is configured to control the level of the fourth control signal in response to the first control signal to control the second level control The single, the singular, the sub-response to the position of the control number at the trailing edge of the first control signal to turn on the second level control unit. System ▲ / 7 · If you apply for the shift register described in item 46 of the patent scope, the φ 5 弟 一 驱动 drive unit further includes: *, a sixth transistor, the gate receives the second timing signal, The first source//and the pole receives the second voltage, and the second source/drain receives the fourth control signal 56 rtfrrr 20080_5243TW3165PA, as described in item 4i, the shifting (four) register, the younger bit The quasi-control unit comprises a "seventh transistor", the gate is connected to (four) the first control signal 'the first source, the source receives the first timing signal, and the gate/drain is coupled to the wheel terminal. Λ弟一源 49. As disclosed in the scope of claim 41, the shift register, .亥第一位準控制單①包括—U晶體,閘極接收該第四 控制訊號,第一源極/沒極Λ接至該輸出端,第" 極接收該第一電壓。 5〇.如申請專利範圍第^項所述之移位暫存琴, 該些級移位暫存ϋ單元中之—第—級移位暫存器單元& 接收-起始訊號,並以該起始訊號做為該輪入訊號。 51.如申請專利範圍第41項所述之移位暫存器,其中 5亥些移位暫存器單元中任兩相鄰之移位暫存器單元所接 收之該第一時序訊號之致能時間係為錯開; 其中,第η級移位暫存器單元接收之第二時序訊號之 致能時間與第η+1級移位暫存器單元接收之第一時序訊號 之致能時間亦為錯開。 52·如申請專利範圍第41項所述之移位暫存器,其中 弟η+1級移位暫存器單元係接收一第三時序訊號及該第^一 時序訊號,其中該第三時序訊號之致能時間與該第一及該 第二時序訊號之致能時間係為錯開。 53.如申請專利範圍第41項所述之移位暫存器,其中 第η+1級移位暫存器單元係接收一第三時序訊號及一第四 ϊί¥Γϊ~ ϊί¥Γϊ~ TW3165PA 200805243 該第二、該第三及該第四時序訊 時序訊號,其中該第一 號之致此日守間均為錯開。 54·二種移㈣存ϋ,具有複數級彼此串聯連接之移 邙:’:::…其中該第η、级移位暫存器單元輸出-輪出 。k 。别矾號為第n+1級移位暫存元 號’η為自然數,該第n級移位暫存器輸入此 一第一位準控制單元,用以提供—第一匕括· 輸出端; 接於:’與該第一位準控制單元之輸入端偶 接於弟即點’該第一節點之電制声 該第-驅動單元用以回师輪 4 m虎’ Ede· 、 輸镜之前緣(RisinS 移位暫存器單元Hi制用以回應於第計1級 Edge)來關閉該第—位準㈣單1之;—驅動緣㈤ggeHng 一第二位準控制單元,用以徂一〜 端;以及 、一第一電壓至該輸出 第一驅動單元,用以回應於 關閉該第二位準控制單元,制訊號之前緣 緣(Rear Edge)來導通該第二位準第—控制訊號之後 該第-驅動單元包括-第―電曰項^之移位暫存器,其中 接收第n+1級移位暫存器單元:(_^:nsistor),閘極(Gate (Source)/没極(Dmi_接至該第—:控制訊號,第一源極 收該第-時序訊號,該第三電=點’第二源極/没極接 ——…一 —_______________ 日日體用以回應於第n+1級移 58 . ,·二 二 .·- 一 •θ' ΈΓ 'gs------ ·»— ^ * I mi I 200805243^ —TW3165PA ” 位暫存器單元之第一控制訊號之該驅動緣來提供該第一 電壓至該第一節點。 56·如申請專利範圍第55項所述之移位暫存器,其中 該弟一驅動單元更包括一第二電晶體’閘極接收一第二時 序訊號,第一源極/汲極耦接至該第一節點,第二源極/汲 極接收該輪入訊號,該第二電晶體用以回應於該第二時序 訊號之上升緣(Rising Edge)來提供該輸入訊號之之低電壓 位準至該第一節點; • 其中,該第二時序訊號之致能時間與該第一時序訊號 之致能時間係為錯開。 57‘如申請專利範圍第54項所述之移位暫存器,其中 更包括一第三位準控制單元,用以回應於第n+1級移位暫 存裔單元之輸出訊號之前緣來提供該第一電壓至該輸出 端,該第三位準控制單元包括: _ 一第二電晶體,閘極接收第n+1級移位暫存器單元之 •輸出訊號,»-源極/没極搞接至該輸出端,第三源極/沒 極接收該第一電壓。 — 58·如申請專利範圍第57項所述之移位暫存器,其中 该弟三位準控制單元更包括: 第四電晶體’閘極接收—第二時序訊號,第-源極 接至該輸_,第:源極級極接I該第一電壓, ^二電晶體回應於二時序訊號之上升緣來提供該 弟一電壓至該輸出端。 59·如申請專利範圍» 54項所述之移位暫存器,其中 — 一—…/ . ... ' ~ 一 - : ---------—-------------- —Γ -> - - :r I f 4 1 200805243 TW3165PA 該第二驅動單元包括一偏壓單元,與該第二位準控制單元 之輸入端耦接於一第二節點,該第二節點之電壓為一第四 控制訊號,該偏壓單元用以回應於該第一控制訊號之前緣 來控制該第四控制訊號之位準以關閉該第二位準控制單 元,並回應於該第一控制訊號之後緣來控制該第四控制訊 號之位準以開啟該第二位準控制單元。 60·如申請專利範圍第59項所述之移位暫存器,其中 該弟一驅動早7〇更包括: 一第六電晶體,閘極接收該第二時序訊號,第—源極 //及極接收遠弟一電壓,第二源極/没極接收該第四控制气 號。 〇 61·如申請專利範圍第54項所述之移位暫存器,其中 該第一位準控制單元包括一第七電晶體,閘極接收\亥第一 控制訊號’第-源極/汲極接㈣第一時序訊號,/ 極/;?及極岸馬接至該輸出端。 ’、The first level control unit 1 includes a U-crystal, the gate receives the fourth control signal, and the first source/no-pole is connected to the output, and the first pole receives the first voltage. 5〇. If the shifting temporary storage piano described in the scope of claim 2, the shifting temporary storage unit in the unit-level shift register unit & receive-start signal, and The start signal is used as the round signal. 51. The shift register of claim 41, wherein the first timing signal received by any two adjacent shift register units of the shift register unit The enabling time is staggered; wherein, the enabling time of the second timing signal received by the nth stage shift register unit and the enabling of the first timing signal received by the n+1th shift register unit Time is also staggered. 52. The shift register according to claim 41, wherein the η+1 stage shift register unit receives a third timing signal and the first timing signal, wherein the third timing The enabling time of the signal is offset from the enabling time of the first and second timing signals. 53. The shift register according to claim 41, wherein the n+1th shift register unit receives a third timing signal and a fourth ϊί¥Γϊ~ ϊί¥Γϊ~ TW3165PA 200805243 The second, the third and the fourth time sequence signal, wherein the first number is staggered on the day. 54. Two kinds of shifting (four) storing, having a plurality of stages connected to each other in series 邙: ':::... wherein the nth, stage shift register unit output - round out. k. The nickname is the n+1th shift temporary storage element number 'n is a natural number, and the nth stage shift register is input to the first level control unit for providing - the first · · · output Connected to: 'The input terminal of the first level control unit is coupled to the younger point, 'the first node of the electric making sound, the first drive unit is used to return to the division wheel 4 m tiger' Ede·, lose The leading edge of the mirror (the RisinS shift register unit Hi is configured to respond to the first level Edge) to close the first level (four) single 1; the driving edge (5) ggeHng a second level control unit for 徂And a first voltage to the output first driving unit, in response to turning off the second level control unit, and the front edge of the signal is turned on to turn on the second level first control After the signal, the first driving unit includes a shift register of the -th electric item, wherein the n+1th shift register unit is received: (_^: nsistor), gate (Gate (Source) / 极无(Dmi_ is connected to the first -: control signal, the first source receives the first - timing signal, the third power = point 'second source / no pole connection - ... one _______________ The Japanese body is used to respond to the n+1th shift 58 . , · 二 二···一·θ' ΈΓ 'gs------ ·»— ^ * I mi I 200805243^ —TW3165PA ” The driving edge of the first control signal of the register unit provides the first voltage to the first node. 56. The shift register according to claim 55, wherein the driving unit is further The second transistor includes a second timing signal, the first source/drain is coupled to the first node, and the second source/drain receives the round signal. The second transistor is used for the second transistor. Providing a low voltage level of the input signal to the first node in response to a rising edge of the second timing signal; wherein, the enabling time of the second timing signal and the first timing The enabling time of the signal is staggered. 57' The shift register as described in claim 54 of the patent application, further comprising a third level control unit for responding to the n+1th shift Providing the first voltage to the output terminal of the output signal of the descent unit, the third level control The unit includes: _ a second transistor, the gate receives the output signal of the n+1th stage shift register unit, »-source/no pole is connected to the output terminal, and the third source/no pole The first voltage is received as described in claim 57, wherein the third-level control unit further comprises: a fourth transistor 'gate receiving-second timing signal, The first source is connected to the input _, the first source is connected to the first voltage, and the second transistor is responsive to the rising edge of the second timing signal to provide the voltage to the output. 59·If you apply for a shift register as described in item 54 of the patent scope, where – one —.../ . . . ~ ~ one-: ----------------- ------- -Γ -> - - :r I f 4 1 200805243 TW3165PA The second driving unit includes a biasing unit coupled to the second end of the second level control unit The voltage of the second node is a fourth control signal, and the biasing unit is configured to control the level of the fourth control signal to close the second level control unit in response to the leading edge of the first control signal. And controlling the level of the fourth control signal to open the second level control unit in response to the trailing edge of the first control signal. 60. The shift register according to claim 59, wherein the driving of the first one further comprises: a sixth transistor, the gate receiving the second timing signal, the first source// The pole receives a voltage from the remote, and the second source/no pole receives the fourth control air number. The shift register according to claim 54, wherein the first level control unit comprises a seventh transistor, and the gate receives the first control signal 'first-source/汲The pole (4) first timing signal, / pole /; and the pole shore horse connected to the output. ’, ^ 甲§月寻利範圍第54項所述之移位暫存器,苴, »亥第-位準控制單%包括—m體 ^ 控制訊號’第-源極她细錢輸 妾^ 極接收該第一電壓。严昂原極Θ 63·如申請專利筋圍馀, 該些級移位暫絲單元中》4項所述之移位暫存器,其中 接收-起始訊號,並㈣f—第—級移位暫存器單元係. 64.如申請專利範圍y始訊號做為該輸入訊號。 該些移位暫存器單元巾54項所述之移位暫存器,其令 _—…— 兩相鄰之移位暫存器單元所接 . 、…〜 , 60 一 — 200805243測猶 a 收之該第一時序訊號之致能時間係為錯開; 其中,第η級移位暫存器單元接收之第二時序訊號之 致能時間與第η+1級移位暫存器單元接收之第一時序訊號 之致能時間亦為錯開。 65.如申請專利範圍第54項所述之移位暫存器,其中 第η+1級移位暫存器單元係接收一第三時序訊號及該第一 時序訊號,其中該第三時序訊號之致能時間與該第一及該 第二時序訊號之致能時間係為錯開。 ⑩ 66.如申請專科範圍第54項所述之移位暫存器,其中 第η+1級移位暫存器單元係接收一第三時序訊號及一第四 時序訊號,其中談第一、該第二、該第三及該第四時序訊 號之致能時間均為錯開。. —61^ A § Month of the range of the shift register described in item 54 of the profit-seeking range, 苴, »Hai-level control unit % includes -m body ^ control signal 'first-source her fine money input ^ pole receiving The first voltage. Strictly original Θ 63 · If applying for patent ribs, the shift register of the four-stage shifting temporary wire unit, in which the receiving-start signal, and (four) f-level shift The register unit is 64. If the patent application range y is started as the input signal. The shift register unit 54 of the shift register unit is arranged to be connected to the two adjacent shift register units. . . . , 60 A - 200805243 The enabling time of the first timing signal is staggered; wherein the enabling time of the second timing signal received by the nth stage shift register unit is received by the n+1th shift register unit The enabling time of the first timing signal is also staggered. 65. The shift register of claim 54, wherein the n+1th shift register unit receives a third timing signal and the first timing signal, wherein the third timing The enabling time of the signal is offset from the enabling time of the first and second timing signals. 10 66. The shift register according to claim 54, wherein the n+1th shift register unit receives a third timing signal and a fourth timing signal, wherein The enabling times of the second, third, and fourth timing signals are all staggered. . —61
TW096113544A 2006-07-12 2007-04-17 Shift register TWI366814B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/822,899 US8055695B2 (en) 2006-07-12 2007-07-11 Shift register with each stage controlled by a specific voltage of the next stage and the stage after thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83010906P 2006-07-12 2006-07-12

Publications (2)

Publication Number Publication Date
TW200805243A true TW200805243A (en) 2008-01-16
TWI366814B TWI366814B (en) 2012-06-21

Family

ID=38999830

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113544A TWI366814B (en) 2006-07-12 2007-04-17 Shift register

Country Status (2)

Country Link
CN (1) CN101105978B (en)
TW (1) TWI366814B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402817B (en) * 2009-09-07 2013-07-21 Au Optronics Corp Shift register circuit and gate signal generation method thereof
TWI486959B (en) * 2014-05-05 2015-06-01 Au Optronics Corp Shift register circuit
TWI563514B (en) * 2015-06-05 2016-12-21 Au Optronics Corp Shift register circuit
TWI563513B (en) * 2015-06-03 2016-12-21 Au Optronics Corp Shift register circuit

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101908381B (en) * 2009-06-04 2013-02-06 胜华科技股份有限公司 Shift register
CN103578437A (en) * 2012-07-31 2014-02-12 群康科技(深圳)有限公司 Voltage drop-down circuit structure of grid drive circuit and display device thereof
US20180108309A1 (en) * 2014-06-13 2018-04-19 Sharp Kabushiki Kaisha Shift register circuit, and display device including same
KR102407980B1 (en) * 2015-10-27 2022-06-14 엘지디스플레이 주식회사 Shiftlegistor and Display Device Having the Same
TWI730722B (en) * 2020-04-14 2021-06-11 友達光電股份有限公司 Driving device and display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410583A (en) * 1993-10-28 1995-04-25 Rca Thomson Licensing Corporation Shift register useful as a select line scanner for a liquid crystal display
KR100685307B1 (en) * 1999-11-05 2007-02-22 엘지.필립스 엘시디 주식회사 Shift Register
JP4501048B2 (en) * 2000-12-28 2010-07-14 カシオ計算機株式会社 Shift register circuit, drive control method thereof, display drive device, and read drive device
KR101057891B1 (en) * 2004-05-31 2011-08-19 엘지디스플레이 주식회사 Shift register
JP2006106320A (en) * 2004-10-05 2006-04-20 Alps Electric Co Ltd Driving circuit of liquid crystal display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402817B (en) * 2009-09-07 2013-07-21 Au Optronics Corp Shift register circuit and gate signal generation method thereof
TWI486959B (en) * 2014-05-05 2015-06-01 Au Optronics Corp Shift register circuit
TWI563513B (en) * 2015-06-03 2016-12-21 Au Optronics Corp Shift register circuit
TWI563514B (en) * 2015-06-05 2016-12-21 Au Optronics Corp Shift register circuit

Also Published As

Publication number Publication date
CN101105978A (en) 2008-01-16
TWI366814B (en) 2012-06-21
CN101105978B (en) 2011-12-07

Similar Documents

Publication Publication Date Title
TW200805243A (en) Shift register
JP6441516B2 (en) Semiconductor device
TW538400B (en) Shift register and image display device
JP5063706B2 (en) Shift register and display device
JP5307157B2 (en) Digital logic circuit, shift register, and active matrix device
TWI360094B (en) Shift register and liquid crystal display
US7710384B2 (en) Pulse output circuit, shift register and display device
JP5538890B2 (en) Shift register
JP4761643B2 (en) Shift register, drive circuit, electrode substrate, and flat display device
CN102881243B (en) Shift register
WO2020177473A1 (en) Shift register unit, gate driving circuit and control method thereof, and display device
WO2010050262A1 (en) Shift register circuit, display device and shift register circuit driving method
JP6077681B2 (en) Shift register, gate drive circuit, array substrate, and display device
TWI280553B (en) Driving circuit of liquid crystal display
JP2006189762A (en) Shift register for flat plate display device
CN101978428A (en) Shift register and active matrix device
CN106531112A (en) Shifting register unit and driving method thereof, shifting register and display apparatus
TW200421248A (en) Shift register and driving method thereof
CN110782940B (en) Shift register unit, gate drive circuit, array substrate and display device
JP2009245564A (en) Shift register and display using the same
TWI354262B (en) Gate driving circuit and driving circuit unit ther
US20070075959A1 (en) Display device
TWI718867B (en) Gate driving circuit
TW200830321A (en) System for displaying images by utilizing vertical shift registers to generate non-overlapped output signals
JP2009181612A (en) Shift register circuit and liquid crystal display unit

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees
MM4A Annulment or lapse of patent due to non-payment of fees