TW200802917A - High brightness light emitting diode - Google Patents
High brightness light emitting diodeInfo
- Publication number
- TW200802917A TW200802917A TW95119522A TW95119522A TW200802917A TW 200802917 A TW200802917 A TW 200802917A TW 95119522 A TW95119522 A TW 95119522A TW 95119522 A TW95119522 A TW 95119522A TW 200802917 A TW200802917 A TW 200802917A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- reflector
- bond
- emitting diode
- light emitting
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
The present invention provides a high brightness light emitting diode, which includes: a substrate with a first electrode on the bottom side thereof; a bonding layer located on the substrate; a reflector located on the bonding layer and consisted of a metal reflection layer and a transparent dielectric layer with low reflectivity or formed into a dispersion-type Prague reflector, in which the transparent dielectric layer is formed of a material selected from a group consisted of metal oxides, fluorides, oxides, or pseudo-diamond carbide; a transparent conductive oxide layer located beneath the surface layer of the transparent dielectric layer and is formed of a material selected from GITO, ZITO or ITO, and downwardly installed with conductive metal striding over the dielectric zone; a first bond layer located on the reflector and the transparent conductive oxide layer; an active layer on the first bond layer; a second bond layer on the active layer; and a second electrode on the second bond layer. Thus, the disclosed LED provides a highly reflective reflector and has the effects of efficiency with increased light extraction efficiency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95119522A TW200802917A (en) | 2006-06-02 | 2006-06-02 | High brightness light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95119522A TW200802917A (en) | 2006-06-02 | 2006-06-02 | High brightness light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200802917A true TW200802917A (en) | 2008-01-01 |
Family
ID=44765510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95119522A TW200802917A (en) | 2006-06-02 | 2006-06-02 | High brightness light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200802917A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859860A (en) * | 2010-05-04 | 2010-10-13 | 厦门市三安光电科技有限公司 | AlGaInP-series light-emitting diode with double reflecting layers and preparation method thereof |
| TWI495164B (en) * | 2009-04-16 | 2015-08-01 | Nichia Corp | Light emitting device |
| CN102842669B (en) * | 2008-05-26 | 2015-11-18 | 晶元光电股份有限公司 | Photoelectric cell |
| CN111969002A (en) * | 2020-08-28 | 2020-11-20 | 上海大学 | Ultra-clear flexible light-emitting display and preparation method thereof |
-
2006
- 2006-06-02 TW TW95119522A patent/TW200802917A/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842669B (en) * | 2008-05-26 | 2015-11-18 | 晶元光电股份有限公司 | Photoelectric cell |
| TWI495164B (en) * | 2009-04-16 | 2015-08-01 | Nichia Corp | Light emitting device |
| US9136450B2 (en) | 2009-04-16 | 2015-09-15 | Nichia Corporation | Light emitting device |
| CN101859860A (en) * | 2010-05-04 | 2010-10-13 | 厦门市三安光电科技有限公司 | AlGaInP-series light-emitting diode with double reflecting layers and preparation method thereof |
| CN101859860B (en) * | 2010-05-04 | 2013-04-10 | 厦门市三安光电科技有限公司 | Method for preparing AlGaInP-series light-emitting diode with double reflecting layers |
| CN111969002A (en) * | 2020-08-28 | 2020-11-20 | 上海大学 | Ultra-clear flexible light-emitting display and preparation method thereof |
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