TW200745760A - Positive photoresist composition for forming thick resist film, thick resist laminate and method for forming resist pattern - Google Patents

Positive photoresist composition for forming thick resist film, thick resist laminate and method for forming resist pattern

Info

Publication number
TW200745760A
TW200745760A TW096105110A TW96105110A TW200745760A TW 200745760 A TW200745760 A TW 200745760A TW 096105110 A TW096105110 A TW 096105110A TW 96105110 A TW96105110 A TW 96105110A TW 200745760 A TW200745760 A TW 200745760A
Authority
TW
Taiwan
Prior art keywords
forming
thick resist
thick
resist
acid
Prior art date
Application number
TW096105110A
Other languages
English (en)
Other versions
TWI349164B (en
Inventor
Hiroshi Shimbori
Masahiro Masujima
Toshihiro Yamaguchi
Sachiko Yoshizawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200745760A publication Critical patent/TW200745760A/zh
Application granted granted Critical
Publication of TWI349164B publication Critical patent/TWI349164B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
TW096105110A 2006-03-15 2007-02-12 Positive photoresist composition for forming thick resist film, thick resist laminate and method for forming resist pattern TWI349164B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006070927A JP4954576B2 (ja) 2006-03-15 2006-03-15 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200745760A true TW200745760A (en) 2007-12-16
TWI349164B TWI349164B (en) 2011-09-21

Family

ID=38522290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105110A TWI349164B (en) 2006-03-15 2007-02-12 Positive photoresist composition for forming thick resist film, thick resist laminate and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP4954576B2 (zh)
TW (1) TWI349164B (zh)
WO (1) WO2007108253A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018061512A1 (ja) * 2016-09-30 2019-06-24 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性組成物
SG11201900622UA (en) 2016-10-12 2019-04-29 Ridgefield Acquisition Chemically amplified positive photoresist composition and pattern forming method using same
CN110914757B (zh) 2017-08-31 2023-12-22 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法及固体摄像元件的制造方法
KR20200036899A (ko) 2017-09-29 2020-04-07 후지필름 가부시키가이샤 패턴 형성 방법, 이온 주입 방법, 고체 촬상 소자의 제조 방법, 다층 레지스트막, 감활성광선성 또는 감방사선성 수지 조성물
WO2021199823A1 (ja) 2020-03-30 2021-10-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法、パターン形成方法、電子デバイスの製造方法
KR20240014535A (ko) * 2021-05-28 2024-02-01 메르크 파텐트 게엠베하 후막 레지스트 조성물 및 이를 사용하는 레지스트 막의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3798552B2 (ja) * 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
JP3934816B2 (ja) * 1999-03-18 2007-06-20 東京応化工業株式会社 ディフェクト抑制ポジ型レジスト塗布液
JP3929648B2 (ja) * 1999-07-26 2007-06-13 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP3963624B2 (ja) * 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4310028B2 (ja) * 2000-06-12 2009-08-05 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
JP3963724B2 (ja) * 2002-01-10 2007-08-22 ダイセル化学工業株式会社 フォトレジスト用高分子化合物の製造方法、及びフォトレジスト用樹脂組成物
JP2005091433A (ja) * 2003-09-12 2005-04-07 Mitsui Chemicals Inc ポジ型感光性樹脂組成物、およびその用途
JP4549911B2 (ja) * 2004-03-31 2010-09-22 東京応化工業株式会社 リフトオフ用ポジ型レジスト組成物
JP4545500B2 (ja) * 2004-07-01 2010-09-15 東京応化工業株式会社 化学増幅型レジスト組成物およびレジストパターン形成方法

Also Published As

Publication number Publication date
JP2007248727A (ja) 2007-09-27
WO2007108253A1 (ja) 2007-09-27
JP4954576B2 (ja) 2012-06-20
TWI349164B (en) 2011-09-21

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