TW200745391A - Method and apparatus for manufacturing semiconductor nanoparticles - Google Patents

Method and apparatus for manufacturing semiconductor nanoparticles

Info

Publication number
TW200745391A
TW200745391A TW096106874A TW96106874A TW200745391A TW 200745391 A TW200745391 A TW 200745391A TW 096106874 A TW096106874 A TW 096106874A TW 96106874 A TW96106874 A TW 96106874A TW 200745391 A TW200745391 A TW 200745391A
Authority
TW
Taiwan
Prior art keywords
semiconductor nanoparticles
reaction
manufacturing semiconductor
nuclei
semiconductor
Prior art date
Application number
TW096106874A
Other languages
English (en)
Inventor
Satoshi Hachiya
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW200745391A publication Critical patent/TW200745391A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW096106874A 2006-02-27 2007-02-27 Method and apparatus for manufacturing semiconductor nanoparticles TW200745391A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006049724A JP2007224233A (ja) 2006-02-27 2006-02-27 半導体ナノ粒子の製造方法及びその製造装置

Publications (1)

Publication Number Publication Date
TW200745391A true TW200745391A (en) 2007-12-16

Family

ID=38458907

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106874A TW200745391A (en) 2006-02-27 2007-02-27 Method and apparatus for manufacturing semiconductor nanoparticles

Country Status (6)

Country Link
US (1) US20090029563A1 (zh)
EP (1) EP1990311A1 (zh)
JP (1) JP2007224233A (zh)
KR (1) KR20080114697A (zh)
TW (1) TW200745391A (zh)
WO (1) WO2007099794A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008037716A (ja) * 2006-08-09 2008-02-21 National Institute Of Advanced Industrial & Technology 半導体微粒子の製造方法
GB2454902B (en) * 2007-11-22 2012-12-05 Ct Fa R Angewandte Nanotechnologie Can Gmbh A method for the manufacture of III-V particles
JP5721134B2 (ja) * 2010-02-12 2015-05-20 国立研究開発法人産業技術総合研究所 マイクロリアクター
KR101788786B1 (ko) * 2013-03-15 2017-10-19 나노코 테크놀로지스 리미티드 Iii-v/아연 칼코겐 화합물로 합금된 반도체 양자점
CN105102580B (zh) * 2013-03-20 2018-03-16 皇家飞利浦有限公司 多孔颗粒中的封装的量子点
WO2016010405A1 (ko) * 2014-07-17 2016-01-21 서강대학교 산학협력단 광학 및 디스플레이 응용을 위한 반도체 형광나노입자의 제조방법
JP6428089B2 (ja) * 2014-09-24 2018-11-28 日亜化学工業株式会社 発光装置
EP3604215A4 (en) * 2017-03-28 2020-02-26 Fujifilm Corporation GROUP (III) - (V) SEMICONDUCTOR NANOPARTICLE PRODUCTION METHOD, GROUP (III) - (V) SEMICONDUCTOR QUANTIC POINT PRODUCTION METHOD, AND FLOW REACTION SYSTEM
JP2019151513A (ja) * 2018-03-01 2019-09-12 株式会社アルバック コアシェル型量子ドット分散液の製造方法
JP7464893B2 (ja) 2021-12-09 2024-04-10 日亜化学工業株式会社 発光装置
WO2023119960A1 (ja) * 2021-12-23 2023-06-29 パナソニックＩｐマネジメント株式会社 半導体ナノ粒子の製造方法及び半導体ナノ粒子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
WO2001007689A2 (en) * 1999-07-26 2001-02-01 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6179912B1 (en) 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
JP2003160336A (ja) 2001-11-22 2003-06-03 Mitsubishi Chemicals Corp 化合物半導体超微粒子の製造方法
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体

Also Published As

Publication number Publication date
JP2007224233A (ja) 2007-09-06
WO2007099794A1 (ja) 2007-09-07
KR20080114697A (ko) 2008-12-31
US20090029563A1 (en) 2009-01-29
EP1990311A1 (en) 2008-11-12

Similar Documents

Publication Publication Date Title
TW200745391A (en) Method and apparatus for manufacturing semiconductor nanoparticles
SG158090A1 (en) New process for large-scale production of monodisperse nanoparticles
EP1780781A4 (en) PROCESS FOR PRODUCING SILICON DISK AND SILICON DISC PRODUCED THEREBY
MX2007010007A (es) Aparato y metodo para la produccion de hidrogeno.
EP1785511A4 (en) SILICON WAFER, METHOD OF MANUFACTURING THEREOF, AND METHOD OF PULLING A SILICON CRYSTAL
EP1847242A4 (en) STERILE PACKAGING, PROCESS AND APPARATUS FOR ITS PRODUCTION
WO2006009881A3 (en) Process and apparatus for forming nanoparticles using radiofrequency plasmas
TW200741821A (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
EP1736573A4 (en) METHOD FOR THE PRODUCTION OF A CRYSTAL OF A NITRIDE OF A GROUP III ELEMENT, MANUFACTURING DEVICE FOR THE USE THEREOF AND THE SEMICONDUCTOR ELEMENT MADE THEREFOR
TW200710289A (en) Crystal production process using supercritical solvent, crystal growth apparatus, crystal and device
EP2055672A4 (en) N-SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING N-SEMICONDUCTOR CARBON NANOMATERIAL AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
WO2011031483A3 (en) Methods for controlling metal nanostructures morphology
TW200640596A (en) Production of metal nanoparticles
WO2006018220A3 (de) Verfahren zur herstellung von dihydropteridinonen
WO2010047788A3 (en) Imprint lithography system and method
EP1970940A3 (en) Substrate processing apparatus, substrate processing method and storage medium
HK1147140A1 (en) Process for producing substrate for power module, substrate for power module, and power module
GB0623335D0 (en) Cladophora-form carbon, process for producing the same and production apparatus therefor
TW200720187A (en) Improvements in thin film production
SG113611A1 (en) Process for the production of very pure 2,4'-methylenediphenyl diisocyanate
WO2005081721A3 (en) Method for enhancing transport of semiconductor nanocrystals across biological membranes
EP1909315A4 (en) SILICON PLATE AND METHOD FOR PRODUCING SAME
ZA200803616B (en) Process for production of silicon tetrafluoride, and apparatus for the process
EP2149597A4 (en) BIOKOPS PRODUCTION DEVICE, METHOD OF CONTROLLING THE SAME, AND METHOD FOR THE PRODUCTION THEREOF
WO2009060902A1 (ja) セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法