TW200742050A - Image sensing device and fabricating method thereof - Google Patents

Image sensing device and fabricating method thereof

Info

Publication number
TW200742050A
TW200742050A TW095113734A TW95113734A TW200742050A TW 200742050 A TW200742050 A TW 200742050A TW 095113734 A TW095113734 A TW 095113734A TW 95113734 A TW95113734 A TW 95113734A TW 200742050 A TW200742050 A TW 200742050A
Authority
TW
Taiwan
Prior art keywords
substrate
conductive line
transistor
layer
dielectric layer
Prior art date
Application number
TW095113734A
Other languages
Chinese (zh)
Inventor
Ming-I Wang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW095113734A priority Critical patent/TW200742050A/en
Publication of TW200742050A publication Critical patent/TW200742050A/en

Links

Abstract

An image sensing device includes a substrate with a photo sensing and a transistor regions, a photo diode, a transistor, a dielectric layer, a metal interconnect, a metal conductive line, a conformal passivation layer, a color filter, a lens planar layer, and a microlens. The photo diode is in the substrate within the photo sensing region. The transistor is on the substrate in the transistor region. The dielectric layer is on the substrate. Except within the photo sensing region, the metal interconnect and the metal conductive line are respectively located in and on the dielectric layer. The conformal passivation layer is on the dielectric layer and covers the metal conductive line. The color filter is on the conformal passivation layer in the photo sensing region and the bottom thereof is lower than the top of the metal conductive line. The lens planar layer and the microlens are sequentially on the precedent structure.
TW095113734A 2006-04-18 2006-04-18 Image sensing device and fabricating method thereof TW200742050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095113734A TW200742050A (en) 2006-04-18 2006-04-18 Image sensing device and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095113734A TW200742050A (en) 2006-04-18 2006-04-18 Image sensing device and fabricating method thereof

Publications (1)

Publication Number Publication Date
TW200742050A true TW200742050A (en) 2007-11-01

Family

ID=57914086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113734A TW200742050A (en) 2006-04-18 2006-04-18 Image sensing device and fabricating method thereof

Country Status (1)

Country Link
TW (1) TW200742050A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575719B (en) * 2012-11-21 2017-03-21 英特希爾美國公司 Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
TWI637496B (en) * 2015-03-18 2018-10-01 聯華電子股份有限公司 Semiconductor device and method for fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575719B (en) * 2012-11-21 2017-03-21 英特希爾美國公司 Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
TWI637496B (en) * 2015-03-18 2018-10-01 聯華電子股份有限公司 Semiconductor device and method for fabricating the same

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