JP2013080838A5 - - Google Patents

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Publication number
JP2013080838A5
JP2013080838A5 JP2011220310A JP2011220310A JP2013080838A5 JP 2013080838 A5 JP2013080838 A5 JP 2013080838A5 JP 2011220310 A JP2011220310 A JP 2011220310A JP 2011220310 A JP2011220310 A JP 2011220310A JP 2013080838 A5 JP2013080838 A5 JP 2013080838A5
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Japan
Prior art keywords
light receiving
insulating layer
sensor substrate
receiving surface
imaging device
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Application number
JP2011220310A
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Japanese (ja)
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JP5760923B2 (en
JP2013080838A (en
Filing date
Publication date
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Priority claimed from JP2011220310A external-priority patent/JP5760923B2/en
Priority to JP2011220310A priority Critical patent/JP5760923B2/en
Priority to TW101133370A priority patent/TWI577001B/en
Priority to DE202012013576.7U priority patent/DE202012013576U1/en
Priority to EP19177082.5A priority patent/EP3561873B1/en
Priority to US14/346,607 priority patent/US9184205B2/en
Priority to PCT/JP2012/074945 priority patent/WO2013051462A1/en
Priority to CN201610686559.3A priority patent/CN106169493B/en
Priority to KR1020147006318A priority patent/KR102051155B1/en
Priority to EP12838953.3A priority patent/EP2747139B1/en
Priority to CN201280045395.6A priority patent/CN103797579B/en
Publication of JP2013080838A publication Critical patent/JP2013080838A/en
Publication of JP2013080838A5 publication Critical patent/JP2013080838A5/ja
Publication of JP5760923B2 publication Critical patent/JP5760923B2/en
Application granted granted Critical
Priority to US14/871,345 priority patent/US9374511B2/en
Priority to US15/087,729 priority patent/US9576998B2/en
Priority to US15/411,470 priority patent/US10312281B2/en
Priority to US16/413,045 priority patent/US11329091B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (15)

光電変換部が配列形成された画素領域を有するセンサ基板と、
前記センサ基板において前記光電変換部に対する受光面とは逆の表面側に設けられた駆動回路と、
前記画素領域の外側の周辺領域において、前記センサ基板における前記受光面側から前記駆動回路に達して設けられた貫通ビアと、
前記周辺領域の前記受光面側において、前記貫通ビア上に直接積層されたパッド配線とを備えた
固体撮像装置。 A sensor substrate having a pixel region in which photoelectric conversion portions are arrayed;
A drive circuit provided on the surface side opposite to the light receiving surface for the photoelectric conversion unit in the sensor substrate;
In a peripheral region outside the pixel region, a through via provided to reach the drive circuit from the light receiving surface side of the sensor substrate;
A solid-state imaging device, comprising: pad wiring directly stacked on the through via on the light receiving surface side of the peripheral region. 前記パッド配線を覆って前記受光面上に設けられた保護膜と、
前記保護膜上に設けられたオンチップレンズと、
前記パッド配線を露出する状態で前記保護膜に設けられたパッド開口とを備えた
請求項１記載の固体撮像装置。 A protective film covering the pad wiring and provided on the light receiving surface;
An on-chip lens provided on the protective film;
The solid-state imaging device according to claim 1, further comprising: a pad opening provided in the protective film in a state where the pad wiring is exposed. 前記センサ基板の表面側において前記パッド配線と重なる位置には、素子が配置されている
請求項１または２記載の固体撮像装置。 Wherein a position overlapping the pad wiring in the surface side of the sensor substrate, the solid-state imaging device according to claim 1 or 2, wherein elements are arranged. 前記貫通ビアは、前記センサ基板の受光面側に設けられた埋込配線部分と当該埋込配線部分と一体に形成された貫通ビア部分とを備え、
前記パッド配線は、前記埋込配線部分上に直接積層されている
請求項１〜３の何れかに記載の固体撮像装置。 The through via includes an embedded wiring portion provided on the light receiving surface side of the sensor substrate and a through via portion formed integrally with the embedded wiring portion.
The solid-state imaging device according to claim 1, wherein the pad wiring is directly stacked on the embedded wiring portion. 前記埋込配線部分は、前記センサ基板の受光面側に埋め込まれている
請求項４記載の固体撮像装置。 The solid-state imaging device according to claim 4, wherein the embedded wiring portion is embedded on a light receiving surface side of the sensor substrate. 前記画素領域における前記受光面上には、絶縁層を介して前記光電変換部に対応した受光開口を有する遮光膜が設けられて、
前記パッド配線は、前記遮光膜と同一層で構成されている
請求項１〜５の何れかに記載の固体撮像装置。 On the light receiving surface in the pixel region, a light shielding film having a light receiving opening corresponding to the photoelectric conversion unit via an insulating layer is provided,
The pad wiring the solid-state imaging device according to any one of claims 1-5 which is composed of the light shielding film in the same layer. 前記受光面上には、前記画素領域の膜厚が当該画素領域の外側に設けられた周辺領域の膜厚よりも薄い段差構造を有する絶縁層が設けられ、
前記絶縁層における段差上部には、前記パッド配線が設けられ、
前記絶縁層における段差下部には、前記光電変換部に対応した受光開口を有する遮光膜が設けられた
請求項１〜５の何れかに記載の固体撮像装置。 On the light receiving surface, an insulating layer having a step structure in which the film thickness of the pixel region is thinner than the film thickness of the peripheral region provided outside the pixel region is provided.
The pad wiring is provided above the step in the insulating layer,
The solid-state imaging device according to any one of claims 1 to 5 , wherein a light-shielding film having a light-receiving opening corresponding to the photoelectric conversion unit is provided below a step in the insulating layer. 前記絶縁層は、異なる材料を用いて構成された積層構造であり、
前記画素領域においては、前記絶縁層において積層構造の上層部分を構成する膜が除去されている
請求項７記載の固体撮像装置。 The insulating layer is a laminated structure configured using different materials,
The solid-state imaging device according to claim 7, wherein in the pixel region, a film constituting an upper layer portion of the stacked structure is removed from the insulating layer. 前記センサ基板の表面側には、前記駆動回路を有する回路基板が貼り合わせられた
請求項１〜８の何れかに記載の固体撮像装置。 Wherein the surface side of the sensor substrate, the solid-state imaging device according to any one of claims 1-8 in which the circuit board having the driving circuit has been adhered. センサ基板に設定された画素領域に光電変換部を配列形成することと、
前記センサ基板において前記光電変換部に対する受光面とは逆の表面側に駆動回路を形成することと、
前記画素領域の外側の周辺領域に、前記センサ基板における前記受光面側から前記駆動回路に達する貫通ビアを形成することと、
前記周辺領域における前記受光面側に、前記貫通ビア上に直接積層されたパッド配線を形成することとを行う
固体撮像装置の製造方法。 Arraying photoelectric conversion portions in a pixel region set on the sensor substrate;
Forming a driving circuit on the surface side opposite to the light receiving surface for the photoelectric conversion unit in the sensor substrate;
Forming a through via reaching the drive circuit from the light receiving surface side of the sensor substrate in a peripheral region outside the pixel region;
A method for manufacturing a solid-state imaging device, comprising: forming pad wiring directly stacked on the through via on the light receiving surface side in the peripheral region. 前記貫通ビアを形成する際には、
前記センサ基板の受光面側に、配線溝と、当該配線溝の底部から当該センサ基板を貫通して前記駆動回路にまで延設された接続孔とを形成した後、当該配線溝と接続孔とを同時に埋め込むことにより、埋込配線部分と貫通ビア部分とで構成された貫通ビアを形成する
請求項１０記載の固体撮像装置の製造方法。 When forming the through via,
After forming a wiring groove and a connection hole extending through the sensor substrate from the bottom of the wiring groove to the drive circuit on the light receiving surface side of the sensor substrate, the wiring groove and the connection hole The method of manufacturing a solid-state imaging device according to claim 10, wherein a through via composed of an embedded wiring portion and a through via portion is formed by simultaneously embedding the semiconductor device. 前記パッド配線を形成する際には、
前記光電変換部に対応した受光開口を有する遮光膜を、前記パッド配線と同一層で前記画素領域に形成する
請求項１０または１１記載の固体撮像装置の製造方法。 When forming the pad wiring,
A light shielding film having a light-receiving aperture corresponding to the photoelectric conversion unit, the manufacturing method of the pad wiring the solid-state imaging device according to claim 10 or 11, wherein forming the pixel region in the same layer. 前記貫通ビアを形成する前に、前記受光面上に絶縁層を成膜し、
次いで前記絶縁層および前記センサ基板を貫通する貫通ビアを形成した後、
前記絶縁層において前記画素領域に対応する部分を前記周辺領域に対して選択的に薄膜化することにより当該絶縁層に段差構造を形成することと、
前記絶縁層における段差上部に、前記貫通ビア上に直接積層されたパッド配線を形成することと、
前記絶縁層における段差下部に、前記光電変換部に対応した受光開口を有する遮光膜を形成することとを行う
請求項１０〜１２の何れかに記載の固体撮像装置の製造方法。 Before forming the through via, an insulating layer is formed on the light receiving surface,
Next, after forming a through via penetrating the insulating layer and the sensor substrate,
Forming a step structure in the insulating layer by selectively thinning a portion corresponding to the pixel region in the insulating layer with respect to the peripheral region;
Forming a pad wiring directly laminated on the through via on the step in the insulating layer;
Wherein the step lower in the insulating layer, a method for manufacturing a solid-state imaging device according to any one of claims 10 to 12 for performing the method comprising: forming a light shielding film having a light-receiving aperture corresponding to the photoelectric conversion unit. 前記絶縁層を成膜する際には、異なる材料を用いて構成された積層構造として当該絶縁層を成膜し、
前記絶縁層に段差構造を形成する際には、当該絶縁層において積層構造の上層部分を構成する膜を、下層部分を構成する膜に対して選択的に除去する
請求項１３記載の固体撮像装置の製造方法。 When forming the insulating layer, the insulating layer is formed as a laminated structure composed of different materials,
The solid-state imaging device according to claim 13, wherein when the step structure is formed in the insulating layer, the film constituting the upper layer portion of the laminated structure in the insulating layer is selectively removed with respect to the film constituting the lower layer portion. Manufacturing method. 光電変換部が配列形成された画素領域を有するセンサ基板と、
前記センサ基板において前記光電変換部に対する受光面とは逆の表面側に設けられた駆動回路と、
前記画素領域の外側の周辺領域において、前記センサ基板における前記受光面側から前記 駆動回路に達して設けられた貫通ビアと、
前記周辺領域の前記受光面側において、前記貫通ビア上に直接積層されたパッド配線と、
前記光電変換部に入射光を導く光学系を備えた
電子機器。 A sensor substrate having a pixel region in which photoelectric conversion portions are arrayed;
A drive circuit provided on the surface side opposite to the light receiving surface for the photoelectric conversion unit in the sensor substrate;
In a peripheral region outside the pixel region, a through via provided to reach the drive circuit from the light receiving surface side of the sensor substrate;
Pad wiring directly laminated on the through via on the light receiving surface side of the peripheral region;
An electronic apparatus comprising an optical system that guides incident light to the photoelectric conversion unit.
JP2011220310A 2011-10-04 2011-10-04 Method for manufacturing solid-state imaging device Expired - Fee Related JP5760923B2 (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP2011220310A JP5760923B2 (en) 2011-10-04 2011-10-04 Method for manufacturing solid-state imaging device
TW101133370A TWI577001B (en) 2011-10-04 2012-09-12 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic device
KR1020147006318A KR102051155B1 (en) 2011-10-04 2012-09-27 Solid-state image pickup device, method for making solid-state image pickup device, and electronic device
CN201280045395.6A CN103797579B (en) 2011-10-04 2012-09-27 Solid-state image pickup unit, the method manufacturing solid-state image pickup unit and electronic equipment
EP19177082.5A EP3561873B1 (en) 2011-10-04 2012-09-27 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
US14/346,607 US9184205B2 (en) 2011-10-04 2012-09-27 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
PCT/JP2012/074945 WO2013051462A1 (en) 2011-10-04 2012-09-27 Solid-state image pickup device, method for making solid-state image pickup device, and electronic device
CN201610686559.3A CN106169493B (en) 2011-10-04 2012-09-27 Solid-state image pickup unit and electronic equipment
DE202012013576.7U DE202012013576U1 (en) 2011-10-04 2012-09-27 Solid-state imaging unit and electronic device
EP12838953.3A EP2747139B1 (en) 2011-10-04 2012-09-27 Semiconductor image pickup device, method for making semiconductor image pickup device, and electronic device
US14/871,345 US9374511B2 (en) 2011-10-04 2015-09-30 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
US15/087,729 US9576998B2 (en) 2011-10-04 2016-03-31 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
US15/411,470 US10312281B2 (en) 2011-10-04 2017-01-20 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
US16/413,045 US11329091B2 (en) 2011-10-04 2019-05-15 Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus

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JP2011220310A JP5760923B2 (en) 2011-10-04 2011-10-04 Method for manufacturing solid-state imaging device

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JP2013080838A5 true JP2013080838A5 (en) 2014-11-13
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5421475B2 (en) * 2012-07-04 2014-02-19 誠 雫石 Imaging device, semiconductor integrated circuit, and imaging apparatus
JP5424371B1 (en) 2013-05-08 2014-02-26 誠 雫石 Solid-state imaging device and imaging apparatus
KR102047920B1 (en) * 2013-09-11 2019-11-25 삼성디스플레이 주식회사 Display device and method of manufacturing the same
TW202407993A (en) 2013-11-06 2024-02-16 日商新力股份有限公司 Solid-state imaging device, method for producing same, and electronic apparatus
KR102177702B1 (en) * 2014-02-03 2020-11-11 삼성전자주식회사 Via Structures and Semiconductor Devices Having a Via plug
JP2015170702A (en) * 2014-03-06 2015-09-28 ソニー株式会社 Solid state imaging apparatus, manufacturing method thereof and electronic apparatus
JP2016146376A (en) * 2015-02-06 2016-08-12 ルネサスエレクトロニクス株式会社 Imaging apparatus and manufacturing method of the same
TWI692859B (en) * 2015-05-15 2020-05-01 日商新力股份有限公司 Solid-state imaging device, manufacturing method thereof, and electronic device
JP2017168531A (en) * 2016-03-14 2017-09-21 株式会社リコー Solid-state image pickup device and manufacturing method of solid-state image pickup device
JP2019040893A (en) * 2017-08-22 2019-03-14 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and manufacturing method thereof, and electronic apparatus
JP2017216480A (en) * 2017-09-01 2017-12-07 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of the same
WO2019092938A1 (en) * 2017-11-13 2019-05-16 オリンパス株式会社 Semiconductor substrate, semiconductor substrate laminate, and endoscope
US10950178B2 (en) * 2018-02-20 2021-03-16 Emagin Corporation Microdisplay with reduced pixel size and method of forming same
US20230178579A1 (en) * 2020-03-31 2023-06-08 Sony Semiconductor Solutions Corporation Light receiving element and electronic device
KR20210122525A (en) * 2020-04-01 2021-10-12 에스케이하이닉스 주식회사 Image sensor device
KR20210137677A (en) * 2020-05-11 2021-11-18 에스케이하이닉스 주식회사 Image sensor device
WO2021256343A1 (en) * 2020-06-18 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Display device, method for manufacturing display device, and electronic apparatus
JP2023022718A (en) * 2021-08-03 2023-02-15 ソニーセミコンダクタソリューションズ株式会社 Imaging apparatus, manufacturing method of the same and electronic apparatus
WO2024024450A1 (en) * 2022-07-26 2024-02-01 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and manufacturing method for same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168074A (en) * 1997-08-13 1999-03-09 Sony Corp Solid state image sensor
JP4979154B2 (en) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 Semiconductor device
JP2003209235A (en) * 2002-01-16 2003-07-25 Sony Corp Solid-state imaging device and method of manufacturing the same
JP2006261638A (en) * 2005-02-21 2006-09-28 Sony Corp Solid state imaging device, and driving method thereof
JP5268618B2 (en) * 2008-12-18 2013-08-21 株式会社東芝 Semiconductor device
JP5985136B2 (en) * 2009-03-19 2016-09-06 ソニー株式会社 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
JP5442394B2 (en) * 2009-10-29 2014-03-12 ソニー株式会社 SOLID-STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
JP2010199602A (en) * 2010-04-16 2010-09-09 Sony Corp Solid-state imaging element and manufacturing method of the same

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