TW200741986A - Method of fabricating non-volatile memory - Google Patents
Method of fabricating non-volatile memoryInfo
- Publication number
- TW200741986A TW200741986A TW095113898A TW95113898A TW200741986A TW 200741986 A TW200741986 A TW 200741986A TW 095113898 A TW095113898 A TW 095113898A TW 95113898 A TW95113898 A TW 95113898A TW 200741986 A TW200741986 A TW 200741986A
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- volatile memory
- tunneling oxide
- nanocrystals
- nitridize
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005641 tunneling Effects 0.000 abstract 4
- 239000002159 nanocrystal Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095113898A TWI299548B (en) | 2006-04-19 | 2006-04-19 | Fabrication method of non-volatile memory |
US11/309,206 US20070249121A1 (en) | 2006-04-19 | 2006-07-13 | Method of fabricating non-volatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095113898A TWI299548B (en) | 2006-04-19 | 2006-04-19 | Fabrication method of non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200741986A true TW200741986A (en) | 2007-11-01 |
TWI299548B TWI299548B (en) | 2008-08-01 |
Family
ID=38619981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095113898A TWI299548B (en) | 2006-04-19 | 2006-04-19 | Fabrication method of non-volatile memory |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070249121A1 (zh) |
TW (1) | TWI299548B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070202648A1 (en) * | 2006-02-28 | 2007-08-30 | Samsung Electronics Co. Ltd. | Memory device and method of manufacturing the same |
US7846793B2 (en) * | 2007-10-03 | 2010-12-07 | Applied Materials, Inc. | Plasma surface treatment for SI and metal nanocrystal nucleation |
US8772856B2 (en) * | 2010-01-25 | 2014-07-08 | Micron Technology, Inc. | Charge storage nodes with conductive nanodots |
US8994006B2 (en) * | 2012-10-02 | 2015-03-31 | International Business Machines Corporation | Non-volatile memory device employing semiconductor nanoparticles |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297095B1 (en) * | 2000-06-16 | 2001-10-02 | Motorola, Inc. | Memory device that includes passivated nanoclusters and method for manufacture |
US7092287B2 (en) * | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US7183143B2 (en) * | 2003-10-27 | 2007-02-27 | Macronix International Co., Ltd. | Method for forming nitrided tunnel oxide layer |
-
2006
- 2006-04-19 TW TW095113898A patent/TWI299548B/zh active
- 2006-07-13 US US11/309,206 patent/US20070249121A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI299548B (en) | 2008-08-01 |
US20070249121A1 (en) | 2007-10-25 |
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