TW200741818A - Exposure apparatus and device manufacturing method - Google Patents

Exposure apparatus and device manufacturing method

Info

Publication number
TW200741818A
TW200741818A TW096109314A TW96109314A TW200741818A TW 200741818 A TW200741818 A TW 200741818A TW 096109314 A TW096109314 A TW 096109314A TW 96109314 A TW96109314 A TW 96109314A TW 200741818 A TW200741818 A TW 200741818A
Authority
TW
Taiwan
Prior art keywords
exposure light
exposure apparatus
device manufacturing
exposure
outputted
Prior art date
Application number
TW096109314A
Other languages
English (en)
Inventor
Hiroyuki Nagasaka
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200741818A publication Critical patent/TW200741818A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
TW096109314A 2006-03-17 2007-03-19 Exposure apparatus and device manufacturing method TW200741818A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006074245 2006-03-17

Publications (1)

Publication Number Publication Date
TW200741818A true TW200741818A (en) 2007-11-01

Family

ID=38522444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109314A TW200741818A (en) 2006-03-17 2007-03-19 Exposure apparatus and device manufacturing method

Country Status (6)

Country Link
US (1) US20070242254A1 (zh)
EP (1) EP2003683A1 (zh)
JP (1) JPWO2007108415A1 (zh)
KR (1) KR20080113068A (zh)
TW (1) TW200741818A (zh)
WO (1) WO2007108415A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2009678A4 (en) * 2006-04-17 2011-04-06 Nikon Corp OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
KR100771902B1 (ko) * 2006-07-13 2007-11-01 삼성전자주식회사 기판 노광 방법 및 장치
US8665418B2 (en) * 2007-04-18 2014-03-04 Nikon Corporation Projection optical system, exposure apparatus, and device manufacturing method
US8501395B2 (en) * 2007-06-04 2013-08-06 Applied Materials, Inc. Line edge roughness reduction and double patterning
US8736813B2 (en) * 2008-08-26 2014-05-27 Nikon Corporation Exposure apparatus with an illumination system generating multiple illumination beams
US8705170B2 (en) * 2008-08-29 2014-04-22 Nikon Corporation High NA catadioptric imaging optics for imaging A reticle to a pair of imaging locations
US20100091257A1 (en) * 2008-10-10 2010-04-15 Nikon Corporation Optical Imaging System and Method for Imaging Up to Four Reticles to a Single Imaging Location
US20100123883A1 (en) * 2008-11-17 2010-05-20 Nikon Corporation Projection optical system, exposure apparatus, and device manufacturing method
US20110187878A1 (en) 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
JP6022759B2 (ja) * 2011-11-30 2016-11-09 株式会社オーク製作所 反射屈折型投影光学系およびそれを備えた投影露光装置
US10447424B2 (en) 2018-01-18 2019-10-15 Apple Inc. Spatial multiplexing scheme
US10877285B2 (en) 2018-03-28 2020-12-29 Apple Inc. Wavelength-based spatial multiplexing scheme
US11493606B1 (en) 2018-09-12 2022-11-08 Apple Inc. Multi-beam scanning system

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KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1144263C (zh) * 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
DE69735016T2 (de) * 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JPH10232497A (ja) * 1997-02-20 1998-09-02 Nikon Corp 露光装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2001297976A (ja) 2000-04-17 2001-10-26 Canon Inc 露光方法及び露光装置
JP2002057098A (ja) * 2000-05-30 2002-02-22 Nikon Corp 照明光学装置，該照明光学装置を備えた露光装置，及びマイクロデバイスの製造方法
EP1255162A1 (en) * 2001-05-04 2002-11-06 ASML Netherlands B.V. Lithographic apparatus
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP2004304135A (ja) 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
JP2006074245A (ja) 2004-08-31 2006-03-16 Sony Corp 光学装置及び画像生成装置

Also Published As

Publication number Publication date
JPWO2007108415A1 (ja) 2009-08-06
US20070242254A1 (en) 2007-10-18
EP2003683A1 (en) 2008-12-17
KR20080113068A (ko) 2008-12-26
WO2007108415A1 (ja) 2007-09-27

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