TW200741334A - Pattern forming method and gray-tone mask manufacturing method - Google Patents

Pattern forming method and gray-tone mask manufacturing method

Info

Publication number
TW200741334A
TW200741334A TW096106053A TW96106053A TW200741334A TW 200741334 A TW200741334 A TW 200741334A TW 096106053 A TW096106053 A TW 096106053A TW 96106053 A TW96106053 A TW 96106053A TW 200741334 A TW200741334 A TW 200741334A
Authority
TW
Taiwan
Prior art keywords
inorganic
mask layer
resist pattern
gray
thin film
Prior art date
Application number
TW096106053A
Other languages
Chinese (zh)
Inventor
Michiaki Sano
Masaru Mitsui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200741334A publication Critical patent/TW200741334A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A gray-tone mask has a light-shielding portion, a light-transmitting portion, and a gray-tone portion adapted to reduce a transmission amount of exposure light in use of the mask. For manufacturing this gray-tone mask, a method includes a step of preparing a mask blank in which a thin film containing metal and silicon and an inorganic-based etching mask layer each having resistance to etching of the other are formed on a light-transmissive substrate, a step of forming a first resist pattern on the inorganic-based etching mask layer, a step of etching the inorganic-based etching mask layer by using the first resist pattern as a mask and using an etching solution for the inorganic-based etching mask layer, a step of peeling off the first resist pattern remaining after etching the inorganic-based etching mask layer, a step of etching the thin film by using the inorganic-based etching mask layer as a mask and an etching solution for the thin film. The thin film is etched with the first resist pattern peeled off. Thereafter, a second resist pattern is formed on the inorganic-based etching mask layer and the light-transmissive substrate, and the inorganic-based etching mask layer is etched by using the second resist pattern as a mask and then the second resist pattern is peeled off. Thus, the gray-tone portion is formed by the thin film while the light-shielding portion is formed by the inorganic-based etching mask layer and the thin film.
TW096106053A 2006-02-22 2007-02-16 Pattern forming method and gray-tone mask manufacturing method TW200741334A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006045659 2006-02-22

Publications (1)

Publication Number Publication Date
TW200741334A true TW200741334A (en) 2007-11-01

Family

ID=38613162

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106053A TW200741334A (en) 2006-02-22 2007-02-16 Pattern forming method and gray-tone mask manufacturing method

Country Status (3)

Country Link
KR (1) KR20070085167A (en)
CN (1) CN101025566A (en)
TW (1) TW200741334A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103412463A (en) * 2013-08-27 2013-11-27 南通富士通微电子股份有限公司 Mask plate and manufacturing method thereof
DE102020106742A1 (en) 2020-03-12 2021-09-16 Auto-Kabel Management Gmbh Electrical contact part and method for producing an electrical contact part
CN113204074A (en) * 2021-04-21 2021-08-03 上海大学 Non-equal-height optical waveguide directional mode coupler prepared based on ultraviolet gray-scale photoetching method
CN117637448B (en) * 2024-01-26 2024-05-03 粤芯半导体技术股份有限公司 Side wall manufacturing method and device, chip and electronic equipment

Also Published As

Publication number Publication date
KR20070085167A (en) 2007-08-27
CN101025566A (en) 2007-08-29

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