TW200739685A - Method and apparatus for improving symmetry of a layer deposited on a semiconductor substrate - Google Patents
Method and apparatus for improving symmetry of a layer deposited on a semiconductor substrateInfo
- Publication number
- TW200739685A TW200739685A TW095147485A TW95147485A TW200739685A TW 200739685 A TW200739685 A TW 200739685A TW 095147485 A TW095147485 A TW 095147485A TW 95147485 A TW95147485 A TW 95147485A TW 200739685 A TW200739685 A TW 200739685A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor substrate
- targets
- layer deposited
- target
- improving symmetry
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/330,366 US20070158179A1 (en) | 2006-01-11 | 2006-01-11 | Method and apparatus for improving symmetry of a layer deposited on a semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200739685A true TW200739685A (en) | 2007-10-16 |
Family
ID=38231684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095147485A TW200739685A (en) | 2006-01-11 | 2006-12-18 | Method and apparatus for improving symmetry of a layer deposited on a semiconductor substrate |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070158179A1 (zh) |
TW (1) | TW200739685A (zh) |
WO (1) | WO2007102905A2 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI554630B (zh) * | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH659484A5 (de) * | 1984-04-19 | 1987-01-30 | Balzers Hochvakuum | Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. |
US4761218A (en) * | 1984-05-17 | 1988-08-02 | Varian Associates, Inc. | Sputter coating source having plural target rings |
KR960026261A (ko) * | 1994-12-14 | 1996-07-22 | 제임스 조셉 드롱 | 재 도입형 콘택 홀을 피복시키거나 또는 충진시키기 위한 방법 및 장치 |
US6231725B1 (en) * | 1998-08-04 | 2001-05-15 | Applied Materials, Inc. | Apparatus for sputtering material onto a workpiece with the aid of a plasma |
US6316097B1 (en) * | 1998-09-28 | 2001-11-13 | Seagate Technology Llc | Electroless plating process for alternative memory disk substrates |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US8696875B2 (en) * | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6784096B2 (en) * | 2002-09-11 | 2004-08-31 | Applied Materials, Inc. | Methods and apparatus for forming barrier layers in high aspect ratio vias |
-
2006
- 2006-01-11 US US11/330,366 patent/US20070158179A1/en not_active Abandoned
- 2006-12-11 WO PCT/US2006/061835 patent/WO2007102905A2/en active Application Filing
- 2006-12-18 TW TW095147485A patent/TW200739685A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007102905A2 (en) | 2007-09-13 |
US20070158179A1 (en) | 2007-07-12 |
WO2007102905A3 (en) | 2008-01-10 |
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