TW200737335A - Method for electrochemically polishing a conductive material on a substrate - Google Patents

Method for electrochemically polishing a conductive material on a substrate

Info

Publication number
TW200737335A
TW200737335A TW096103901A TW96103901A TW200737335A TW 200737335 A TW200737335 A TW 200737335A TW 096103901 A TW096103901 A TW 096103901A TW 96103901 A TW96103901 A TW 96103901A TW 200737335 A TW200737335 A TW 200737335A
Authority
TW
Taiwan
Prior art keywords
substrate
conductive material
polishing
field regions
electrochemically polishing
Prior art date
Application number
TW096103901A
Other languages
Chinese (zh)
Inventor
tian-bo Du
Feng-Chiuan Liou
Alain Duboust
Wei-Yung Hsu
Liang-Yuh Chen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200737335A publication Critical patent/TW200737335A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.
TW096103901A 2006-02-15 2007-02-02 Method for electrochemically polishing a conductive material on a substrate TW200737335A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/355,769 US20070187258A1 (en) 2006-02-15 2006-02-15 Method for electrochemically polishing a conductive material on a substrate

Publications (1)

Publication Number Publication Date
TW200737335A true TW200737335A (en) 2007-10-01

Family

ID=38367222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103901A TW200737335A (en) 2006-02-15 2007-02-02 Method for electrochemically polishing a conductive material on a substrate

Country Status (4)

Country Link
US (1) US20070187258A1 (en)
JP (1) JP2009527129A (en)
TW (1) TW200737335A (en)
WO (1) WO2007095421A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115415857A (en) * 2022-09-14 2022-12-02 大连理工大学 Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009102694A (en) * 2007-10-23 2009-05-14 Ebara Corp Composite electrolytic polishing method
US20090047783A1 (en) * 2007-08-13 2009-02-19 Bchir Omar J Method of removing unwanted plated or conductive material from a substrate, and method of enabling metallization of a substrate using same
US20090061741A1 (en) * 2007-09-04 2009-03-05 Zhihong Wang Ecmp polishing sequence to improve planarity and defect performance
DE102010046372A1 (en) * 2010-09-24 2012-03-29 Oerlikon Trading Ag, Trübbach Method for stripping workpieces
KR102179814B1 (en) * 2013-11-08 2020-11-17 엘지전자 주식회사 Decor panel for home appliances and method for manufacturing the same
JP2017214614A (en) * 2016-05-31 2017-12-07 株式会社カネカ Method for producing electrolytically polished metal compact
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
CA3133711A1 (en) 2019-04-09 2020-10-15 3DM Biomedical Pty Ltd Electropolishing method
JP7330831B2 (en) * 2019-09-17 2023-08-22 アサヒプリテック株式会社 Electrolytic device and stripping method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662788A (en) * 1996-06-03 1997-09-02 Micron Technology, Inc. Method for forming a metallization layer
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115415857A (en) * 2022-09-14 2022-12-02 大连理工大学 Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method
CN115415857B (en) * 2022-09-14 2023-10-20 大连理工大学 Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method

Also Published As

Publication number Publication date
US20070187258A1 (en) 2007-08-16
WO2007095421A2 (en) 2007-08-23
WO2007095421A3 (en) 2008-11-20
JP2009527129A (en) 2009-07-23

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