CN115415857B - Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method - Google Patents
Photoelectrochemical mechanical polishing device and efficient material removal and adjustment method Download PDFInfo
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- CN115415857B CN115415857B CN202211118499.7A CN202211118499A CN115415857B CN 115415857 B CN115415857 B CN 115415857B CN 202211118499 A CN202211118499 A CN 202211118499A CN 115415857 B CN115415857 B CN 115415857B
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- 238000005498 polishing Methods 0.000 title claims abstract description 117
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000012545 processing Methods 0.000 claims description 12
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 11
- 238000007254 oxidation reaction Methods 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000007517 polishing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 34
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a photoelectrochemical mechanical polishing device and a material efficient removal and adjustment method. According to the invention, voltage application and current measurement are carried out in the wafer polishing process by adopting an electrochemical workstation, the oxidation rate of a monitoring wafer is regulated, and the polishing pressure of the wafer is regulated under the control of an industrial personal computer by matching with a proportional valve and an air cylinder, so that a closed-loop control system is formed, the accurate regulation of the pressure and the coordinated control of the chemical oxidation rate and the mechanical removal rate of the wafer can be realized, the maximum oxidation rate of the wafer can be realized by regulating the electric field voltage, the loading pressure is regulated to enable the mechanical removal rate to be matched with the oxidation rate, and further, the material removal rate of the wafer is improved.
Description
Technical Field
The invention relates to the field of ultra-precise processing of wafers, in particular to a photoelectrochemical mechanical polishing device and a material efficient removal and adjustment method.
Background
The third generation semiconductor materials, gallium nitride (GaN) and silicon carbide (SiC), are widely applied to high-performance devices due to the large forbidden band width, and the application of GaN depends on the surface machining quality of atomic level roughness.
The chemical mechanical polishing is the only processing mode capable of realizing global planarization at present, and the gallium nitride (GaN) and silicon carbide (SiC) polishing processing can ensure better surface quality, but the removal rate of the crystal material is extremely low due to the high hardness and the high chemical inertia of the crystal material. In addition, chinese patent No. CN201811537196.2, "a semiconductor wafer photoelectrochemical mechanical polishing apparatus", proposes photoelectrochemical mechanical polishing, which can improve the material removal rate of gallium nitride (GaN), but the chemical oxidation rate and the mechanical removal rate of the wafer are difficult to be controlled in a coordinated manner, so that the maximization of the wafer material removal cannot be achieved.
Therefore, how to realize high-quality and high-efficiency processing of third-generation semiconductor gallium nitride (GaN) and silicon carbide (SiC) is an urgent problem to be solved in the wide application of the third-generation semiconductor gallium nitride (GaN) and silicon carbide (SiC).
Disclosure of Invention
In view of the above, the present invention is to provide a photoelectrochemical mechanical polishing apparatus and a material efficient removal adjustment method, which can maximize the removal of wafer material.
In order to achieve the above object, the technical scheme of the present invention is as follows:
a photoelectrochemical mechanical polishing device comprises a base, a workbench, a water tank, a gantry unit, a polishing disk unit and a working main shaft unit; the polishing disk unit is arranged on the gantry unit and is positioned above the working spindle unit; the two sets of the working spindle units are arranged on the workbench side by side in the left-right direction, and the center distance L of the vacuum suction cups of the two sets of the working spindle units is smaller than the diameter D of the polishing disc minus 2 times of the diameter D of the wafer, namely L is smaller than D-2D; when the polishing device works, two sets of working spindles respectively adsorb a wafer, the polishing disk applies pressure to the wafer and moves left and right, and the left and right movement distance S is less than D-L-D;
the gantry unit comprises a gantry frame, a guide rail I, a screw rod, a driving motor, a sliding table I, a coupler, a nut seat and a sliding block I; the portal frame is fixedly arranged on the workbench, and the driving motor is fixedly arranged on the portal frame and is fixedly connected with the lead screw through a coupler; the nut seat is arranged on the screw rod and fixedly connected with the sliding table I; the sliding table I is in sliding connection with the sliding block I;
the polishing disc unit comprises a linear module base, a guide rail II, a cylinder mounting plate, a floating head, a sliding table II, a loading plate, a hollow rotary table I, a polishing disc protective cover, a conductive slip ring, an insulating pad, an insulating sleeve, an ultraviolet lamp, a polishing pad, a sliding block II, an electrochemical workstation, an upper computer and a proportional valve; the guide rail II is fixedly arranged on the linear module base, and the sliding block II is in sliding connection with the guide rail II; the air cylinder is fixedly arranged on the air cylinder mounting plate, the air cylinder mounting plate is fixedly connected with the linear module base, the air cylinder is fixedly connected with the sliding table II through the floating head, the sliding table II is arranged on the sliding block II, the bottom of the sliding table II is fixedly connected with the loading plate, and the air inlet of the air cylinder is connected with the proportional valve; the hollow rotary table I is fixedly arranged on the loading plate; the polishing disc penetrates through the insulating sleeve and the insulating pad through the bolts to be fixedly connected with the rotor of the hollow rotary table I, and the polishing pad is adhered to the bottom of the polishing disc; the conductive slip ring passes through the loading plate and a middle hole of the hollow rotary table I and is fixed at the top of the polishing disk; the polishing disc protection cover is fixed on the loading plate, a rectangular hole is formed in the polishing disc protection cover, and the ultraviolet lamp is fixed right above the rectangular hole of the polishing disc protection cover;
the working spindle unit comprises a vacuum sucker, a switching disc I, a pressure sensor, a switching disc II, an air floating platform, a baffle column, a switching disc III, a hollow rotary table II, an air-electricity slip ring, a rotary fixing frame, a fixing frame and a baffle plate; the stator of the hollow rotary table II is fixedly arranged on the workbench, the hollow rotary table II is fixedly connected with the air floating platform through a switching disc III, the floating part of the air floating platform is fixedly connected with the pressure sensor through the switching disc II, the pressure sensor is fixedly connected with the vacuum chuck through a switching disc I, and the baffle plate is fixed on the switching disc I; the rotor of the gas-electric slip ring is fixedly connected with the switching disc III, and the stator of the gas-electric slip ring is fixedly connected with the workbench; the conducting terminal of the vacuum sucker is connected with the gas-electric slip ring, the lead-out wire of the gas-electric slip ring is connected with the working electrode of the electrochemical workstation to serve as an anode, and the pressure sensor is connected with the upper computer through the gas-electric slip ring; the side of the floating part of the air floating platform is provided with a baffle column, the side of the fixed part of the air floating platform is provided with a limiting hole, the baffle column is arranged in the limiting hole, and the size of the limiting hole is larger than that of the baffle column.
The insulating pad completely covers the connecting surface of the rotor of the hollow turntable I, the insulating sleeve isolates the bolt connected with the rotor of the hollow turntable I from the polishing disk, the polishing disk is connected with the conductive slip ring, and the lead-out wire of the conductive slip ring is connected with the counter electrode of the electrochemical workstation to serve as a cathode; the conductive porous sheet is connected with a conductive column, the conductive column penetrates through the vacuum chuck, a conductive wiring terminal connecting wire is led out from the bottom of the vacuum chuck, the wire is connected with a gas-electricity slip ring through the through holes on the side surfaces of the switching disc II and the switching disc III, the lead-out wire of the gas-electricity slip ring is connected with a working electrode of an electrochemical workstation as an anode, and the electrochemical workstation is connected with an upper computer; during processing, the vacuum chuck adsorbs a wafer, the polishing disk carries out pressure loading under the action of the air cylinder, current flows from the anode of the electrochemical workstation to the gas-electric slip ring, flows from the gas-electric slip ring to the conductive column, flows from the conductive column to the conductive porous sheet on the upper surface of the vacuum chuck, flows from the conductive sheet on the upper surface of the vacuum chuck to the wafer, flows from the wafer to the polishing liquid, flows from the polishing liquid to the polishing disk, flows from the polishing disk to the conductive slip ring, flows from the conductive slip ring to the cathode of the electrochemical workstation to form a closed loop, ultraviolet light is emitted by the ultraviolet light lamp, and irradiates the upper surface of the wafer through rectangular holes distributed in the sequence on the polishing disk and the polishing pad, so that an oxide layer is generated on the upper surface of the wafer.
Further, polar coordinates of the through holes in the polishing disk and the polishing pad are expressed asWherein->Polar angle of nth hole, n is hole number, alpha 0 Is the divergence angle of the phyllotaxis, r n The diameter of the nth hole, k p Is a phyllotaxis distribution parameter.
Further, the number of through holes distributed in the polishing disk and the polishing pad in a phyllotaxis is 280, and the phyllotaxis divergence angle alpha is 0 1387.508 DEG, the leaf sequence distribution parameter k is taken p Taking 10.
Further, the polishing disc is made of conductive materials, and the insulating pad and the insulating sleeve are made of insulating materials; the material of vacuum chuck upper surface is electrically conductive porous thin slice material, and the inside material of vacuum chuck is porous ceramic material, and the base member material is insulating ceramic material, and vacuum chuck upper surface is electrically conductive porous thin slice material.
A material efficient removal adjustment method of a photoelectrochemical mechanical polishing device comprises the following steps:
A. the electrochemical workstation carries out voltage application according to voltage linear loading at the beginning of processing, and the electrochemical workstation feeds back the voltage-current measured by the voltage linear loading, namely U-I data, to the upper computer;
B. the upper computer takes current data I according to the U-I data fed back by the electrochemical workstation 1 、I 2 、I 3 、I 4 … …, compare whether I 1 ＜I 2 If it is smaller than, comparing whether I 2 ＜I 3 If it is greater than, then compare whether I 1 ＜I 3 Similarly, the current I is obtained max Determining a voltage value Ui at the moment, and setting the voltage of the electrochemical workstation as Ui;
C. the electrochemical workstation has constant voltage, and the electrochemical workstation feeds back the measured current I data to the upper computer;
D. the upper computer obtains current data I according to the current I data fed back by the electrochemical workstation 1 、I 2 、I 3 、I 4 … …, judging the time I before and after 2 -I 1 |、|I 3 -I 2 |、|I 4 -I 3 Whether or not I … … is less than the set value I S ；
E. If in step D |I 2 -I 1 |≤I S The upper computer does not act; if I 1 ＞I 2 The upper computer adopts a PID regulating proportional valve to regulate the air inlet pressure of the air cylinder, and reduces the loading pressure; if I 1 ＜I 2 The upper computer adopts a PID regulating proportional valve to regulate the air inlet pressure of the air cylinder, increases the loading pressure and is similar to I 3 -I 2 |、|I 4 -I 3 I … … and so on.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, the electrochemical workstation is adopted to carry out voltage application and current measurement in the wafer polishing process, the oxidation rate of the monitoring wafer is regulated, the proportional valve and the air cylinder are matched, the polishing pressure of the wafer is regulated under the control of the industrial personal computer, a closed-loop control system is formed, the accurate regulation of the pressure and the coordinated control of the chemical oxidation rate and the mechanical removal rate of the wafer can be realized, the maximum oxidation rate of the wafer can be realized by regulating the electric field voltage, the loading pressure is regulated to enable the mechanical removal rate to be matched with the oxidation rate, and the problem that the chemical oxidation rate is smaller than the mechanical removal rate due to the fact that the loading pressure is too small and the chemical oxidation rate is larger than the mechanical removal rate due to the fact that the loading pressure is too small is avoided in the photoelectric chemical polishing processing device of a semiconductor wafer of the Chinese patent No. 201811537196.2, and the material removal rate of the wafer is further improved. In addition, the device of the invention is provided with two sets of working spindle units left and right, which can effectively reduce the overturning moment brought by one set of working spindle unit, thereby improving the surface quality of the wafer.
Drawings
FIG. 1 is a cross-sectional view of an photoelectrochemical mechanical polishing apparatus of the present invention;
FIG. 2 is a left side view of the photoelectrochemical mechanical polishing apparatus of the present invention;
FIG. 3 is an enlarged view of a portion of FIG. 1 at A;
figure 4 is a polishing disc with a phyllotactic distribution;
fig. 5 is a flow chart of the method of the present invention.
In the figure: 1. the polishing device comprises a base, 2, a workbench, 3, a portal frame, 4, a guide rail I,5, a lead screw, 6, a driving motor, 7, a sliding table I,8, a coupler, 9, a nut seat, 10, a sliding block I,11, a linear module base, 12, a guide rail II,13, a cylinder, 14, a cylinder mounting plate, 15, a floating head, 16, a sliding table II,17, a loading plate, 18, a hollow rotary table I,19, a polishing disc, 20, a polishing disc protecting cover, 21, a conductive sliding ring, 22, an insulating pad, 23, an insulating sleeve, 24, an ultraviolet lamp, 25, a polishing pad, 26, a sliding block II,27, a vacuum chuck, 28, a switching disc I,29, a pressure sensor, 30, a switching disc II,31, an air floating platform, 32, a baffle post, 33, a switching disc III,34, a hollow rotary fixing frame, 37, a fixing frame, 38, an electrochemical working station, 39, an upper computer, 40, a proportional valve, 41, a wafer, 42, a water tank, 43, a baffle plate, 44, a gantry unit, 45, a polishing disc unit 46 and a main shaft unit.
Detailed Description
The invention is further described below with reference to the accompanying drawings. As shown in fig. 1 to 4, a photoelectrochemical mechanical polishing apparatus includes a base 1, a table 2, a water tank 42, a gantry unit 44, a polishing disk unit 45, a work spindle unit 46; the workbench 2 is fixedly arranged on the base 1, the water tank 42 and the gantry unit 44 are respectively and fixedly arranged on the workbench 2, and the polishing disk unit 45 is arranged on the gantry unit 44; the working spindle units 46 are provided with two sets and are respectively and fixedly arranged on the workbench 2; the two sets of working spindle units have the same structure and are arranged on the workbench 2 side by side in the left-right direction, and the center distance L of the vacuum suction cups 27 of the two sets of working spindle units is smaller than the diameter D of the polishing disk 19 minus the diameter D of the wafer 41, namely L is smaller than D-2D; in operation, the two sets of working spindles respectively adsorb a wafer 41, and the polishing disk 19 applies pressure to the wafer 41 and moves left and right by a distance M < D-L-D.
The two sets of spindle units 46 can not only improve the processing efficiency of the wafer 41, but also reduce the overturning moment during polishing, so as to be convenient for obtaining a better wafer surface shape;
the gantry unit 44 comprises a gantry 3, a guide rail I4, a screw rod 5, a driving motor 6, a sliding table I7, a coupler 8, a nut seat 9 and a sliding block I10; the portal frame 3 is fixedly arranged on the workbench 2, and the driving motor 6 is fixedly arranged on the portal frame 3 and is fixedly connected with the screw rod 5 through the coupler 8; the nut seat 9 is arranged on the screw rod 5 and is fixedly connected with the sliding table I7; the sliding table I7 is in sliding connection with the sliding block I10, and the driving motor 6 drives the lead screw 5 to enable the sliding table I7 to move along the direction of the guide rail I4;
the polishing disc unit 45 comprises a linear module base 11, a guide rail II12, an air cylinder 13, an air cylinder mounting plate 14, a floating head 15, a sliding table II16, a loading plate 17, a hollow rotary table I18, a polishing disc 19, a polishing disc protective cover 20, a conductive slip ring 21, an insulating pad 22, an insulating sleeve 23, an ultraviolet lamp 24, a polishing pad 25, a sliding block II26, an electrochemical workstation 38, an upper computer 39 and a proportional valve 40; the guide rail II12 is fixedly arranged on the linear module base 11, and the slide block II26 is in sliding connection with the guide rail II 12; the cylinder 13 is fixedly arranged on the cylinder mounting plate 14, the cylinder mounting plate 14 is fixedly connected with the linear module base 11, the cylinder 13 is fixedly connected with the sliding table II16 through the floating head 15, the sliding table II16 is arranged on the sliding block II26, the bottom of the sliding table II16 is fixedly connected with the loading plate 17, and the air inlet of the cylinder 13 is connected with the proportional valve 40; the hollow turntable I18 is fixedly arranged on the loading plate 17; the polishing disc 19 is fixedly connected with the rotor of the hollow turntable I18 through bolts passing through the insulating sleeve 23 and the insulating pad 22, and the polishing pad 25 is adhered to the bottom of the polishing disc 19; the conductive slip ring 21 passes through the loading plate 17 and a middle hole of the hollow rotary table I18 to be fixed at the top of the polishing disk 19; the polishing disc protection cover 20 is fixed on the loading plate 17, and the polishing disc protection cover 20 is provided with a rectangular hole, and the ultraviolet lamp 24 is fixed right above the rectangular hole of the polishing disc protection cover 20, so that ultraviolet light irradiates the surface of the wafer;
the working spindle unit 46 comprises a vacuum chuck 27, a switching disc I28, a pressure sensor 29, a switching disc II30, an air floating platform 31, a baffle column 32, a switching disc III33, a hollow rotary table II34, a gas-electric slip ring 35, a rotary fixing frame 36, a fixing frame 37 and a baffle 43; the stator of the hollow rotary table II34 is fixedly arranged on the workbench 2, the hollow rotary table II34 is fixedly connected with the air floatation platform 31 through the switching disc III33, the floating part of the air floatation platform 31 is fixedly connected with the pressure sensor 29 through the switching disc II30, the pressure sensor 29 is fixedly connected with the vacuum chuck 27 through the switching disc I28, and the baffle 43 is fixed on the switching disc I28; the rotor of the gas-electric slip ring 35 is fixedly connected with the switching disc III33, and the stator of the gas-electric slip ring 35 is fixedly connected with the workbench 2; the conducting terminal of the vacuum chuck 27 is connected with the gas-electric slip ring 35, a lead wire led out from the gas-electric slip ring 35 is connected with a working electrode of the electrochemical workstation 38 to serve as an anode, and the pressure sensor 29 is connected with the upper computer 39 through the gas-electric slip ring 35; the floating part side of the air floating platform 31 is provided with a baffle column 32, the fixed part side of the air floating platform 31 is provided with a limit hole, the baffle column 32 is arranged in the limit hole, and the size of the limit hole is larger than that of the baffle column 32, so that the air floating platform 31 can float while transmitting torque, and is attached to the surface of the polishing disc 19, and the flatness of the wafer 41 is improved.
The insulating pad 22 completely covers the rotor connecting surface of the hollow turntable I18, the insulating sleeve 23 isolates bolts connected with the rotor of the hollow turntable I18 from the polishing disk 19, the polishing disk 19 is connected with the conductive slip ring 21, and a lead wire led out from the conductive slip ring 21 is connected with a counter electrode of the electrochemical workstation 38 to serve as a cathode; the conductive porous sheet is connected with a conductive column, the conductive column penetrates through the vacuum chuck 27, a conductive wiring terminal connecting wire is led out from the bottom of the vacuum chuck 27, the wire is connected with the gas-electric slip ring 35 through the through holes on the side surfaces of the switching disk II30 and the switching disk III33, the lead out from the gas-electric slip ring 35 is connected with a working electrode of the electrochemical workstation 38 as an anode, and the electrochemical workstation 38 is connected with the upper computer 39; during processing, the vacuum chuck 27 adsorbs the wafer 41, the polishing disk 19 carries out pressure loading under the action of the air cylinder 13, current flows from the anode of the electrochemical workstation 38 to the gas-electric slip ring 35, the gas-electric slip ring 35 flows to the conductive column, the conductive column flows to the conductive porous sheet on the upper surface of the vacuum chuck 27, the conductive porous sheet on the upper surface of the vacuum chuck 27 flows to the wafer 41, the wafer 41 flows to the polishing liquid, the polishing liquid flows to the polishing disk 19, the polishing disk 19 flows to the conductive slip ring 21, the conductive slip ring 21 flows back to the cathode of the electrochemical workstation 38 to form a closed loop, and ultraviolet light is emitted by the ultraviolet light lamp 24, and irradiates the upper surface of the wafer 41 through rectangular holes of the protective cover, through holes distributed in the polishing disk 19 and through holes distributed in the upper order of the polishing pad 25, so that an oxide layer is generated on the upper surface of the wafer 41.
Further, the methodPolar coordinates of the through holes in the polishing disk 19 and the polishing pad 25 are expressed asWherein->Polar angle of nth hole, n is hole number, alpha 0 Is the divergence angle of the phyllotaxis, r n The diameter of the nth hole, k p Is a phyllotaxis distribution parameter.
Further, the number of the through holes distributed in the polishing disk 19 and the polishing pad 25 in the order is 280, and the angle alpha of the divergence of the order is 0 1387.508 DEG, the leaf sequence distribution parameter k is taken p Taking 10.
Further, the polishing disc 19 is made of a conductive material, and the insulating pad 22 and the insulating sleeve 23 are made of insulating materials; the upper surface of the vacuum chuck 27 is made of conductive porous thin sheet material, the inner material of the vacuum chuck 27 is made of porous ceramic material, the base material is made of insulating ceramic material, and the upper surface of the vacuum chuck 27 is made of conductive porous thin sheet material.
A material efficient removal adjustment method of a photoelectrochemical mechanical polishing device comprises the following steps:
A. at the beginning of processing, the electrochemical workstation 38 applies voltage according to the voltage linear loading, and the electrochemical workstation 38 feeds back the measured voltage-current, i.e. U-I data, of the voltage linear loading to the upper computer 39;
B. the upper computer 39 takes current data I according to the U-I data fed back by the electrochemical workstation 38 1 、I 2 、I 3 、I 4 … …, compare whether I 1 ＜I 2 If it is smaller than, comparing whether I 2 ＜I 3 If it is greater than, then compare whether I 1 ＜I 3 Similarly, the current I is obtained max Determining the voltage value U at that time i Setting the voltage of the electrochemical workstation 38 to U i ；
C. The electrochemical workstation 38 has constant voltage, and the electrochemical workstation 38 feeds back the measured current I data to the upper computer 39;
D. the upper computer 39 takes the current data I according to the current I data fed back by the electrochemical workstation 38 1 、I 2 、I 3 、I 4 … …, judging the time I before and after 2 -I 1 |、|I 3 -I 2 |、|I 4 -I 3 Whether or not I … … is less than the set value I S ；
E. If in step D |I 2 -I 1 |≤I S The upper computer 39 does not operate; if I 1 ＞I 2 The upper computer 39 adopts the PID regulating proportional valve 40 to regulate the air inlet pressure of the air cylinder 13, so as to reduce the loading pressure; if I 1 ＜I 2 The upper computer 39 adopts a PID regulating proportional valve 40 to regulate the air inlet pressure of the air cylinder 13, increases the loading pressure, and is similar to I 3 -I 2 |、|I 4 -I 3 I … … and so on.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present invention. The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (5)
1. A photoelectrochemical mechanical polishing apparatus, characterized in that: comprises a base (1), a workbench (2), a water tank (42), a gantry unit (44), a polishing disc unit (45) and a working main shaft unit (46); the polishing disc unit (45) is arranged on the gantry unit (44) and is positioned above the working spindle unit (46); the two sets of the working spindle units (46) are arranged on the workbench (2) side by side in the left-right direction, and the center distance L of the vacuum suction cups (27) of the two sets of the working spindle units (46) is smaller than the diameter D of the polishing disc (19) minus the diameter D of the wafer (41) by 2 times, namely L is smaller than D-2D; when the polishing device works, two sets of working spindles adsorb a wafer (41) respectively, and the polishing disc (19) applies pressure to the wafer (41) and moves left and right, wherein the left and right movement distance S is less than D-L-D;
the polishing disc unit (45) comprises a linear module base (11), a guide rail II (12), an air cylinder (13), an air cylinder mounting plate (14), a floating head (15), a sliding table II (16), a loading plate (17), a hollow rotary table I (18), a polishing disc (19), a polishing disc protective cover (20), a conductive slip ring (21), an insulating pad (22), an insulating sleeve (23), an ultraviolet lamp (24), a polishing pad (25), a sliding block II (26), an electrochemical workstation (38), an upper computer (39) and a proportional valve (40); the air cylinder (13) is fixedly connected with the sliding table II (16) through the floating head (15), and the conductive slip ring (21) penetrates through the loading plate (17) and a middle hole of the hollow rotary table I (18) to be fixed at the top of the polishing disc (19); the polishing disc protection cover (20) is fixed on the loading plate (17), a rectangular hole is formed in the polishing disc protection cover (20), and the ultraviolet lamp (24) is fixed right above the rectangular hole of the polishing disc protection cover (20);
the working spindle unit (46) comprises a vacuum chuck (27), a switching disc I (28), a pressure sensor (29), a switching disc II (30), an air floating platform (31), a baffle column (32), a switching disc III (33), a hollow rotary table II (34), an air electric slip ring (35), a rotary fixing frame (36), a fixing frame (37) and a baffle plate (43); the floating part of the air floating platform (31) is fixedly connected with the pressure sensor (29) through the adapter plate II (30), and the pressure sensor (29) is fixedly connected with the vacuum chuck (27) through the adapter plate I (28); the conducting terminal of the vacuum sucker (27) is connected with the gas-electricity slip ring (35), a lead-out wire of the gas-electricity slip ring (35) is connected with a working electrode of the electrochemical workstation (38) to serve as an anode, and the pressure sensor (29) is connected with the upper computer (39) through the gas-electricity slip ring (35); the side surface of the floating part of the air floating platform (31) is provided with a baffle column (32), the side surface of the fixed part of the air floating platform (31) is provided with a limit hole, the baffle column (32) is arranged in the limit hole, and the size of the limit hole is larger than that of the baffle column (32);
the insulating pad (22) completely covers the rotor connecting surface of the hollow rotary table I (18), the insulating sleeve (23) isolates bolts connected with the rotor of the hollow rotary table I (18) from the polishing disc (19), the polishing disc (19) is connected with the conductive slip ring (21), and a lead wire led out from the conductive slip ring (21) is connected with a counter electrode of the electrochemical workstation (38) to serve as a cathode; the conductive porous sheet is connected with a conductive column, the conductive column penetrates through the vacuum chuck (27), a conductive wiring terminal connecting wire is led out from the bottom of the vacuum chuck (27), the wire is connected with the gas-electricity slip ring (35), and the electrochemical workstation (38) is connected with the upper computer (39); during processing, the wafer (41) is adsorbed by the vacuum chuck (27), the polishing disk (19) is subjected to pressure loading under the action of the air cylinder (13), current flows from the anode of the electrochemical workstation (38) to the gas-electric slip ring (35), the gas-electric slip ring (35) flows to the conductive column, the conductive column flows to the conductive porous sheet on the upper surface of the vacuum chuck (27), the conductive porous sheet on the upper surface of the vacuum chuck (27) flows to the wafer (41), the wafer (41) flows to polishing liquid, the polishing liquid flows to the polishing disk (19), the polishing disk (19) flows to the conductive slip ring (21), the conductive slip ring (21) flows back to the cathode of the electrochemical workstation (38) to form a closed loop, and ultraviolet light is emitted by the ultraviolet light to irradiate the upper surface of the wafer (41) through rectangular holes distributed in sequence on the polishing disk (19) and the polishing pad (25), so that an oxide layer is generated on the upper surface of the wafer (41).
2. The photoelectrochemical mechanical polishing apparatus of claim 1, wherein: polar coordinates of the through holes in the polishing disk (19) and the polishing pad (25) are expressed asWherein->Polar angle of nth hole, n is hole number, alpha 0 Is the divergence angle of the phyllotaxis, r n The diameter of the nth hole, k p Is a phyllotaxis distribution parameter.
3. The photoelectrochemical mechanical polishing apparatus of claim 2, wherein: the number of through holes distributed in the polishing disk (19) and the polishing pad (25) in a phyllotactic way is 280, and the phyllotactic divergence angle alpha is the same as that of the polishing disk 0 1387.508 DEG, the leaf sequence distribution parameter k is taken p Taking 10.
4. The photoelectrochemical mechanical polishing apparatus of claim 1, wherein: the polishing disc (19) is made of conductive materials, and the insulating pad (22) and the insulating sleeve (23) are made of insulating materials; the upper surface of the vacuum sucker (27) is made of conductive porous thin sheet materials, the inner material of the vacuum sucker (27) is made of porous ceramic materials, the base material is made of insulating ceramic materials, and the upper surface of the vacuum sucker (27) is made of conductive porous thin sheet materials.
5. A method of efficient removal adjustment of material for a photoelectrochemical mechanical polishing apparatus as recited in claim 1, comprising the steps of:
A. starting processing, applying voltage by the electrochemical workstation (38) according to voltage linear loading, and feeding back U-I data which is measured by the voltage linear loading of the electrochemical workstation (38) to the upper computer (39);
B. the upper computer (39) takes current data I according to the U-I data fed back by the electrochemical workstation (38) 1 、I 2 、I 3 、I 4 … …, compare whether I 1 ＜I 2 If it is smaller than, comparing whether I 2 ＜I 3 If it is greater than, then compare whether I 1 ＜I 3 Similarly, the current I is obtained max Determining the voltage value U at that time i Setting the voltage of the electrochemical workstation (38) to U i ；
C. The electrochemical workstation (38) has constant voltage, and the electrochemical workstation (38) feeds back the measured current I data to the upper computer (39);
D. the upper computer (39) feeds back the current I number according to the electrochemical workstation (38)According to the data, take the current data I 1 、I 2 、I 3 、I 4 … …, judging the time I before and after 2 -I 1 |、|I 3 -I 2 |、|I 4 -I 3 Whether or not I … … is less than the set value I S ；
E. If in step D |I 2 -I 1 |≤I S The upper computer (39) does not act; if I 1 ＞I 2 The upper computer (39) adopts the proportional valve (40) to adjust the air inlet pressure of the air cylinder (13) so as to reduce the loading pressure; if I 1 ＜I 2 The upper computer (39) adopts the proportional valve (40) to adjust the air inlet pressure of the air cylinder (13), increases the loading pressure, and is the same as I 3 -I 2 |、|I 4 -I 3 I … … and so on.
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| CN117020898B (en) * | 2023-09-28 | 2023-12-26 | 和研半导体设备(沈阳)有限公司 | Dicing saw and semiconductor material processing equipment |
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