TW200736410A - Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper - Google Patents
Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copperInfo
- Publication number
- TW200736410A TW200736410A TW096108704A TW96108704A TW200736410A TW 200736410 A TW200736410 A TW 200736410A TW 096108704 A TW096108704 A TW 096108704A TW 96108704 A TW96108704 A TW 96108704A TW 200736410 A TW200736410 A TW 200736410A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- tac
- exposing
- atomic layer
- layer deposition
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 10
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000231 atomic layer deposition Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010926 purge Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/4554—Plasma being used non-continuously in between ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/378,271 US7407876B2 (en) | 2006-03-20 | 2006-03-20 | Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200736410A true TW200736410A (en) | 2007-10-01 |
TWI367957B TWI367957B (en) | 2012-07-11 |
Family
ID=38518433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096108704A TWI367957B (en) | 2006-03-20 | 2007-03-14 | Method of plasma enhanced atomic layer deposition of tac and tacn films having good adhesion to copper |
Country Status (3)
Country | Link |
---|---|
US (1) | US7407876B2 (zh) |
TW (1) | TWI367957B (zh) |
WO (1) | WO2007111780A2 (zh) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294851B2 (en) * | 2004-11-03 | 2007-11-13 | Infineon Technologies Ag | Dense seed layer and method of formation |
US8993055B2 (en) | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
JP5551681B2 (ja) * | 2008-04-16 | 2014-07-16 | エーエスエム アメリカ インコーポレイテッド | アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積 |
US8053861B2 (en) * | 2009-01-26 | 2011-11-08 | Novellus Systems, Inc. | Diffusion barrier layers |
US8557702B2 (en) * | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
US20120319198A1 (en) | 2011-06-16 | 2012-12-20 | Chin-Cheng Chien | Semiconductor device and fabrication method thereof |
US8674452B2 (en) | 2011-06-24 | 2014-03-18 | United Microelectronics Corp. | Semiconductor device with lower metal layer thickness in PMOS region |
US8486790B2 (en) | 2011-07-18 | 2013-07-16 | United Microelectronics Corp. | Manufacturing method for metal gate |
US8580625B2 (en) | 2011-07-22 | 2013-11-12 | Tsuo-Wen Lu | Metal oxide semiconductor transistor and method of manufacturing the same |
US8658487B2 (en) | 2011-11-17 | 2014-02-25 | United Microelectronics Corp. | Semiconductor device and fabrication method thereof |
CN103205805B (zh) * | 2012-01-11 | 2016-05-04 | 中国科学院微电子研究所 | 一种单晶立方形氮化碳薄膜的制备方法 |
US8860135B2 (en) | 2012-02-21 | 2014-10-14 | United Microelectronics Corp. | Semiconductor structure having aluminum layer with high reflectivity |
US8860181B2 (en) | 2012-03-07 | 2014-10-14 | United Microelectronics Corp. | Thin film resistor structure |
US8836049B2 (en) | 2012-06-13 | 2014-09-16 | United Microelectronics Corp. | Semiconductor structure and process thereof |
US9054172B2 (en) | 2012-12-05 | 2015-06-09 | United Microelectrnics Corp. | Semiconductor structure having contact plug and method of making the same |
US8735269B1 (en) | 2013-01-15 | 2014-05-27 | United Microelectronics Corp. | Method for forming semiconductor structure having TiN layer |
US9412602B2 (en) | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
US8846550B1 (en) | 2013-03-14 | 2014-09-30 | Asm Ip Holding B.V. | Silane or borane treatment of metal thin films |
US8841182B1 (en) | 2013-03-14 | 2014-09-23 | Asm Ip Holding B.V. | Silane and borane treatments for titanium carbide films |
CN104109844B (zh) * | 2013-04-18 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 一种基于原子层沉积技术的氮化钽薄膜的制作工艺 |
US9023708B2 (en) | 2013-04-19 | 2015-05-05 | United Microelectronics Corp. | Method of forming semiconductor device |
US9159798B2 (en) | 2013-05-03 | 2015-10-13 | United Microelectronics Corp. | Replacement gate process and device manufactured using the same |
US9196542B2 (en) | 2013-05-22 | 2015-11-24 | United Microelectronics Corp. | Method for manufacturing semiconductor devices |
US8921947B1 (en) | 2013-06-10 | 2014-12-30 | United Microelectronics Corp. | Multi-metal gate semiconductor device having triple diameter metal opening |
US9064814B2 (en) | 2013-06-19 | 2015-06-23 | United Microelectronics Corp. | Semiconductor structure having metal gate and manufacturing method thereof |
US9384984B2 (en) | 2013-09-03 | 2016-07-05 | United Microelectronics Corp. | Semiconductor structure and method of forming the same |
US9245972B2 (en) | 2013-09-03 | 2016-01-26 | United Microelectronics Corp. | Method for manufacturing semiconductor device |
US20150069534A1 (en) | 2013-09-11 | 2015-03-12 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US9281201B2 (en) | 2013-09-18 | 2016-03-08 | United Microelectronics Corp. | Method of manufacturing semiconductor device having metal gate |
US9318490B2 (en) | 2014-01-13 | 2016-04-19 | United Microelectronics Corp. | Semiconductor structure and manufacturing method thereof |
US9394609B2 (en) | 2014-02-13 | 2016-07-19 | Asm Ip Holding B.V. | Atomic layer deposition of aluminum fluoride thin films |
US9231071B2 (en) | 2014-02-24 | 2016-01-05 | United Microelectronics Corp. | Semiconductor structure and manufacturing method of the same |
US9583337B2 (en) | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
US10643925B2 (en) | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
US10002936B2 (en) | 2014-10-23 | 2018-06-19 | Asm Ip Holding B.V. | Titanium aluminum and tantalum aluminum thin films |
US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
JP7249952B2 (ja) | 2017-05-05 | 2023-03-31 | エーエスエム アイピー ホールディング ビー.ブイ. | 酸素含有薄膜の制御された形成のためのプラズマ増強堆積プロセス |
US10991573B2 (en) | 2017-12-04 | 2021-04-27 | Asm Ip Holding B.V. | Uniform deposition of SiOC on dielectric and metal surfaces |
US11152207B2 (en) | 2018-07-26 | 2021-10-19 | Tokyo Electron Limited | Method of forming titanium nitride films with (200) crystallographic texture |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6455421B1 (en) | 2000-07-31 | 2002-09-24 | Applied Materials, Inc. | Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition |
JP3963078B2 (ja) | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
US7186446B2 (en) * | 2003-10-31 | 2007-03-06 | International Business Machines Corporation | Plasma enhanced ALD of tantalum nitride and bilayer |
US7314835B2 (en) * | 2005-03-21 | 2008-01-01 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US7341959B2 (en) * | 2005-03-21 | 2008-03-11 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US8974868B2 (en) * | 2005-03-21 | 2015-03-10 | Tokyo Electron Limited | Post deposition plasma cleaning system and method |
US20060210723A1 (en) * | 2005-03-21 | 2006-09-21 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US8486845B2 (en) * | 2005-03-21 | 2013-07-16 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
US7422636B2 (en) * | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
US20060213437A1 (en) * | 2005-03-28 | 2006-09-28 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system |
-
2006
- 2006-03-20 US US11/378,271 patent/US7407876B2/en active Active
-
2007
- 2007-02-05 WO PCT/US2007/003215 patent/WO2007111780A2/en active Application Filing
- 2007-03-14 TW TW096108704A patent/TWI367957B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20070218670A1 (en) | 2007-09-20 |
US7407876B2 (en) | 2008-08-05 |
WO2007111780A2 (en) | 2007-10-04 |
WO2007111780A3 (en) | 2008-01-17 |
TWI367957B (en) | 2012-07-11 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |