TW200733257A - Method for fabricating a MESFET - Google Patents

Method for fabricating a MESFET

Info

Publication number
TW200733257A
TW200733257A TW096100279A TW96100279A TW200733257A TW 200733257 A TW200733257 A TW 200733257A TW 096100279 A TW096100279 A TW 096100279A TW 96100279 A TW96100279 A TW 96100279A TW 200733257 A TW200733257 A TW 200733257A
Authority
TW
Taiwan
Prior art keywords
mesfet
fabricating
channel portion
type channel
substrate
Prior art date
Application number
TW096100279A
Other languages
English (en)
Inventor
Thomas Aaron Winslow
Original Assignee
Ma Com Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ma Com Inc filed Critical Ma Com Inc
Publication of TW200733257A publication Critical patent/TW200733257A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
TW096100279A 2006-01-05 2007-01-04 Method for fabricating a MESFET TW200733257A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/327,257 US7485514B2 (en) 2006-01-05 2006-01-05 Method for fabricating a MESFET

Publications (1)

Publication Number Publication Date
TW200733257A true TW200733257A (en) 2007-09-01

Family

ID=37964844

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100279A TW200733257A (en) 2006-01-05 2007-01-04 Method for fabricating a MESFET

Country Status (4)

Country Link
US (1) US7485514B2 (zh)
EP (1) EP1806779A3 (zh)
JP (1) JP2007184617A (zh)
TW (1) TW200733257A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017941B2 (en) 2008-02-05 2011-09-13 Yuan Ze University Ceramic MESFET device and manufacturing method thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485514B2 (en) * 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET
US8193591B2 (en) * 2006-04-13 2012-06-05 Freescale Semiconductor, Inc. Transistor and method with dual layer passivation
WO2017174603A1 (en) * 2016-04-07 2017-10-12 Abb Schweiz Ag Short channel trench power mosfet
US9748281B1 (en) * 2016-09-15 2017-08-29 International Business Machines Corporation Integrated gate driver

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US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
USH390H (en) * 1983-06-17 1987-12-01 The United States Of America As Represented By The Secretary Of The Air Force Self-aligned gate MESFET and the method of fabricating same
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JPS61256675A (ja) * 1985-05-09 1986-11-14 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
US4738934A (en) * 1986-05-16 1988-04-19 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making indium phosphide devices
US4843441A (en) * 1987-08-10 1989-06-27 Willard Jerry W High frequency, high power field effect transistor
US5002897A (en) * 1988-12-05 1991-03-26 Raytheon Company Method of making a complementary metal electrode semiconductor device
JPH02271537A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4963501A (en) * 1989-09-25 1990-10-16 Rockwell International Corporation Method of fabricating semiconductor devices with sub-micron linewidths
US5196358A (en) * 1989-12-29 1993-03-23 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layers
JPH053320A (ja) 1990-08-10 1993-01-08 Fuji Xerox Co Ltd 薄膜半導体装置
JP2746482B2 (ja) * 1991-02-14 1998-05-06 三菱電機株式会社 電界効果型トランジスタ及びその製造方法
US5578512A (en) * 1993-09-07 1996-11-26 Industrial Technology Research Institute Power MESFET structure and fabrication process with high breakdown voltage and enhanced source to drain current
JPH07201885A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置の製造方法
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JPH0883814A (ja) * 1994-07-11 1996-03-26 Toshiba Corp 化合物半導体電界効果トランジスタ及びその製造方法
US5688703A (en) * 1995-09-05 1997-11-18 Motorola, Inc. Method of manufacturing a gate structure for a metal semiconductor field effect transistor
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US7485514B2 (en) * 2006-01-05 2009-02-03 Winslow Thomas A Method for fabricating a MESFET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017941B2 (en) 2008-02-05 2011-09-13 Yuan Ze University Ceramic MESFET device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2007184617A (ja) 2007-07-19
EP1806779A2 (en) 2007-07-11
US7485514B2 (en) 2009-02-03
US20070155072A1 (en) 2007-07-05
EP1806779A3 (en) 2009-05-27

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