TW200731279A - On die thermal sensor of semiconductor memory device and method thereof - Google Patents
On die thermal sensor of semiconductor memory device and method thereofInfo
- Publication number
- TW200731279A TW200731279A TW095136300A TW95136300A TW200731279A TW 200731279 A TW200731279 A TW 200731279A TW 095136300 A TW095136300 A TW 095136300A TW 95136300 A TW95136300 A TW 95136300A TW 200731279 A TW200731279 A TW 200731279A
- Authority
- TW
- Taiwan
- Prior art keywords
- comparing
- voltage
- thermal sensor
- memory device
- semiconductor memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4065—Low level details of refresh operations
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050091666 | 2005-09-29 | ||
| KR1020060051145A KR100772560B1 (ko) | 2005-09-29 | 2006-06-07 | 반도체 메모리 소자의 온도 정보 출력 장치 및 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200731279A true TW200731279A (en) | 2007-08-16 |
| TWI309834B TWI309834B (en) | 2009-05-11 |
Family
ID=38158775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095136300A TWI309834B (en) | 2005-09-29 | 2006-09-29 | On die thermal sensor of semiconductor memory device and method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100772560B1 (zh) |
| TW (1) | TWI309834B (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100851989B1 (ko) * | 2006-10-12 | 2008-08-13 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 온도정보 출력회로 및 방법 |
| US7863965B2 (en) | 2007-06-27 | 2011-01-04 | Hynix Semiconductor Inc. | Temperature sensor circuit and method for controlling the same |
| KR100899390B1 (ko) * | 2007-06-27 | 2009-05-27 | 주식회사 하이닉스반도체 | 온도 센서 회로 및 그 제어 방법 |
| KR100983700B1 (ko) | 2008-04-18 | 2010-09-24 | 주식회사 하이닉스반도체 | Ｒｆｉｄ 장치 |
| KR101003120B1 (ko) | 2008-12-23 | 2010-12-22 | 주식회사 하이닉스반도체 | 반도체 집적회로의 디지털 온도 정보 생성 장치 |
| KR101069678B1 (ko) | 2009-06-16 | 2011-10-05 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 온도 감지 회로 |
| KR101131561B1 (ko) * | 2010-08-31 | 2012-04-04 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전압 생성 회로 |
| KR20180042014A (ko) | 2016-10-17 | 2018-04-25 | 삼성전자주식회사 | 배관 구조체 및 배관 구조체를 포함하는 반도체 모듈 테스트 장치 |
| KR101937263B1 (ko) * | 2017-07-28 | 2019-04-09 | 현대오트론 주식회사 | 차량용 카메라를 위한 신호 처리 장치 및 그것의 동작 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950009922B1 (ko) * | 1992-08-24 | 1995-09-01 | 현대중공업주식회사 | 감지장치의 신호 보정장치 |
| KR19990048860A (ko) * | 1997-12-11 | 1999-07-05 | 김영환 | 반도체 메모리 소자의 온도 감지 회로 |
| KR100475736B1 (ko) * | 2002-08-09 | 2005-03-10 | 삼성전자주식회사 | 고속 테스트에 적합한 편이온도 검출회로를 갖는온도감지기 및 편이온도 검출방법 |
-
2006
- 2006-06-07 KR KR1020060051145A patent/KR100772560B1/ko active IP Right Grant
- 2006-09-29 TW TW095136300A patent/TWI309834B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI309834B (en) | 2009-05-11 |
| KR20070036648A (ko) | 2007-04-03 |
| KR100772560B1 (ko) | 2007-11-02 |
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