TW200729537A - Making method for vertical light emitting diode - Google Patents

Making method for vertical light emitting diode

Info

Publication number
TW200729537A
TW200729537A TW095103113A TW95103113A TW200729537A TW 200729537 A TW200729537 A TW 200729537A TW 095103113 A TW095103113 A TW 095103113A TW 95103113 A TW95103113 A TW 95103113A TW 200729537 A TW200729537 A TW 200729537A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
electric
vertical light
substrate
Prior art date
Application number
TW095103113A
Other languages
Chinese (zh)
Other versions
TWI291252B (en
Inventor
kuan-ren Zhong
hai-wen Xu
zhi-kui Xu
jia-hao Yang
Liang-Ru Lin
Original Assignee
Genesis Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genesis Photonics Inc filed Critical Genesis Photonics Inc
Priority to TW95103113A priority Critical patent/TWI291252B/en
Publication of TW200729537A publication Critical patent/TW200729537A/en
Application granted granted Critical
Publication of TWI291252B publication Critical patent/TWI291252B/en

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Abstract

The invention provides a making method for vertical light emitting diode. It includes the followings: forming epitaxy layer unit capable of generating luminescence by photo-electric effect on the substrate that is easier to produce epitaxy; forming transparent electric conduction layer for light penetration and making the electric current diffusing uniformly; forming plural metal/alloy layers used for electric conduction, heat conduction and bonding; forming plural metal/alloy layers in order for electric conduction and heat conduction on the upper and lower surfaces of another substrate at the same time so as to prepare the heat sink substrate; connecting both substrates by low-temperature press bonding manner; removing the first substrate; and making electrode to finish the making process of vertical light emitting diode. The vertical light emitting diode manufactured by this invention has high heat dissipation efficiency and high combination efficiency of electron and electric hole. It also has the advantage of high light emitting area and low driving voltage at the same time.
TW95103113A 2006-01-26 2006-01-26 Making method for vertical light emitting diode TWI291252B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95103113A TWI291252B (en) 2006-01-26 2006-01-26 Making method for vertical light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95103113A TWI291252B (en) 2006-01-26 2006-01-26 Making method for vertical light emitting diode

Publications (2)

Publication Number Publication Date
TW200729537A true TW200729537A (en) 2007-08-01
TWI291252B TWI291252B (en) 2007-12-11

Family

ID=39460474

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95103113A TWI291252B (en) 2006-01-26 2006-01-26 Making method for vertical light emitting diode

Country Status (1)

Country Link
TW (1) TWI291252B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501418B (en) * 2009-03-31 2015-09-21 Hk Applied Science & Tech Res Quasi - vertical structure of light -emitting diodes
CN113345990A (en) * 2021-04-16 2021-09-03 华灿光电(苏州）有限公司 Light emitting diode chip with vertical structure and preparation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423470B (en) * 2008-08-13 2014-01-11 Epistar Corp A method of manufacturing a high thermal-dissipation light-emitting element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501418B (en) * 2009-03-31 2015-09-21 Hk Applied Science & Tech Res Quasi - vertical structure of light -emitting diodes
CN113345990A (en) * 2021-04-16 2021-09-03 华灿光电(苏州）有限公司 Light emitting diode chip with vertical structure and preparation method thereof
CN113345990B (en) * 2021-04-16 2022-05-20 华灿光电(苏州）有限公司 Light emitting diode chip with vertical structure and preparation method thereof

Also Published As

Publication number Publication date
TWI291252B (en) 2007-12-11

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