TW200728920A - Positive photoresist composition and method of forming resist pattern - Google Patents

Positive photoresist composition and method of forming resist pattern

Info

Publication number
TW200728920A
TW200728920A TW095132938A TW95132938A TW200728920A TW 200728920 A TW200728920 A TW 200728920A TW 095132938 A TW095132938 A TW 095132938A TW 95132938 A TW95132938 A TW 95132938A TW 200728920 A TW200728920 A TW 200728920A
Authority
TW
Taiwan
Prior art keywords
resist pattern
positive photoresist
photoresist composition
composition
forming resist
Prior art date
Application number
TW095132938A
Other languages
Chinese (zh)
Other versions
TWI332602B (en
Inventor
Yusuke Nakagawa
Shinichi Hidesaka
Akiyoshi Yamazaki
Waki Ohkubo
Makiko Irie
Yukiko Kishimoto
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200728920A publication Critical patent/TW200728920A/en
Application granted granted Critical
Publication of TWI332602B publication Critical patent/TWI332602B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

A positive photoresist composition having a wide DOF and a large EL margin, and a method of forming a resist pattern are provided. The composition is a positive resist composition having a resin component (A) which increases its alkali solubility by an action of an acid, and an acid releasing component (B) by an exposure, and the (B) component contains acid generators comprising oxime sulfonate compounds (B1) and onium salts (B2) represented by a general formula (B-I) shown below in which R33 is an alkyl halide, R34 is an aryl, and R35 is an alkyl halide.
TW95132938A 2005-09-28 2006-09-06 Positive photoresist composition and method of forming resist pattern TWI332602B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005281841A JP4574507B2 (en) 2005-09-28 2005-09-28 Positive resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200728920A true TW200728920A (en) 2007-08-01
TWI332602B TWI332602B (en) 2010-11-01

Family

ID=37899704

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95132938A TWI332602B (en) 2005-09-28 2006-09-06 Positive photoresist composition and method of forming resist pattern

Country Status (3)

Country Link
JP (1) JP4574507B2 (en)
TW (1) TWI332602B (en)
WO (1) WO2007037280A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8748076B2 (en) 2011-01-28 2014-06-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US8802348B2 (en) 2007-08-09 2014-08-12 Jsr Corporation Radiation-sensitive resin composition
TWI651590B (en) * 2008-06-30 2019-02-21 富士軟片股份有限公司 Photosensitive composition and pattern forming method using same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866783B2 (en) * 2007-04-27 2012-02-01 東京応化工業株式会社 Resist composition and resist pattern forming method
JP5308657B2 (en) * 2007-12-10 2013-10-09 東京応化工業株式会社 Nonionic photosensitive compound, acid generator, resist composition, and resist pattern forming method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7399577B2 (en) * 2003-02-19 2008-07-15 Ciba Specialty Chemicals Corporation Halogenated oxime derivatives and the use thereof
JP4188265B2 (en) * 2003-10-23 2008-11-26 東京応化工業株式会社 Resist composition and resist pattern forming method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8802348B2 (en) 2007-08-09 2014-08-12 Jsr Corporation Radiation-sensitive resin composition
TWI493289B (en) * 2007-08-09 2015-07-21 Jsr Corp Sensitive radiation linear resin composition
TWI651590B (en) * 2008-06-30 2019-02-21 富士軟片股份有限公司 Photosensitive composition and pattern forming method using same
US8748076B2 (en) 2011-01-28 2014-06-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
TWI509349B (en) * 2011-01-28 2015-11-21 Shinetsu Chemical Co Resist composition and patterning process using the same

Also Published As

Publication number Publication date
WO2007037280A1 (en) 2007-04-05
JP4574507B2 (en) 2010-11-04
JP2007093883A (en) 2007-04-12
TWI332602B (en) 2010-11-01

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