TW200725801A - Method of manufacturing a plurality of semiconductor devices and carrier substrate - Google Patents

Method of manufacturing a plurality of semiconductor devices and carrier substrate

Info

Publication number
TW200725801A
TW200725801A TW095141359A TW95141359A TW200725801A TW 200725801 A TW200725801 A TW 200725801A TW 095141359 A TW095141359 A TW 095141359A TW 95141359 A TW95141359 A TW 95141359A TW 200725801 A TW200725801 A TW 200725801A
Authority
TW
Taiwan
Prior art keywords
carrier substrate
manufacturing
semiconductor devices
layer
individual devices
Prior art date
Application number
TW095141359A
Other languages
English (en)
Inventor
Ronald Dekker
Greja Johanna Adriana Maria Verheijden
Theodorus Martinus Michielsen
Der Poel Carolus Johannes Van
Cornelis Adrianus Henricus Antonius Mutsaers
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200725801A publication Critical patent/TW200725801A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095141359A 2005-11-11 2006-11-08 Method of manufacturing a plurality of semiconductor devices and carrier substrate TW200725801A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05110650 2005-11-11

Publications (1)

Publication Number Publication Date
TW200725801A true TW200725801A (en) 2007-07-01

Family

ID=37808268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141359A TW200725801A (en) 2005-11-11 2006-11-08 Method of manufacturing a plurality of semiconductor devices and carrier substrate

Country Status (7)

Country Link
US (1) US7736948B2 (zh)
EP (1) EP1949433B1 (zh)
JP (1) JP5091150B2 (zh)
CN (1) CN101305456B (zh)
AT (1) ATE519223T1 (zh)
TW (1) TW200725801A (zh)
WO (1) WO2007054869A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
EP2269230A4 (en) 2008-03-08 2016-03-30 Crystal Solar Inc INTEGRATED METHOD AND SYSTEM FOR THE PRODUCTION OF MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS
TWI419091B (zh) * 2009-02-10 2013-12-11 Ind Tech Res Inst 可轉移的可撓式電子裝置結構及可撓式電子裝置的製造方法
US8507322B2 (en) * 2010-06-24 2013-08-13 Akihiro Chida Semiconductor substrate and method for manufacturing semiconductor device
DE102011086689B4 (de) * 2011-11-21 2017-02-16 Osram Oled Gmbh Verfahren zum Herstellen eines opto-elektronischen Bauelements
KR102046534B1 (ko) 2013-01-25 2019-11-19 삼성전자주식회사 기판 가공 방법
US10134803B2 (en) * 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
CN107851586B (zh) 2015-01-23 2021-07-06 维耶尔公司 到受体衬底的选择性微型器件转移
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
DE102020211360A1 (de) 2020-09-10 2022-03-10 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Bereitstellen eines Schichtelementes in einer Schichtanordnung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
CN1143394C (zh) * 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
WO1999038211A1 (de) * 1998-01-22 1999-07-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrosystem und verfahren zum herstellen eines mikrosystems
WO1999048143A2 (en) * 1998-03-16 1999-09-23 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices with 'chip size package'
JP2002518829A (ja) * 1998-06-10 2002-06-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ セラミック保護被覆を備えた集積回路を有する半導体装置及びこの装置を製造する方法
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
WO2003060986A2 (en) 2002-01-11 2003-07-24 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
JP3812500B2 (ja) * 2002-06-20 2006-08-23 セイコーエプソン株式会社 半導体装置とその製造方法、電気光学装置、電子機器
US6946178B2 (en) * 2003-05-23 2005-09-20 James Sheats Lamination and delamination technique for thin film processing
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
JP4912586B2 (ja) * 2003-12-19 2012-04-11 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法
US7820529B2 (en) * 2004-03-22 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing integrated circuit

Also Published As

Publication number Publication date
US20080315440A1 (en) 2008-12-25
EP1949433B1 (en) 2011-08-03
CN101305456A (zh) 2008-11-12
US7736948B2 (en) 2010-06-15
ATE519223T1 (de) 2011-08-15
JP5091150B2 (ja) 2012-12-05
EP1949433A1 (en) 2008-07-30
CN101305456B (zh) 2011-01-12
JP2009516368A (ja) 2009-04-16
WO2007054869A1 (en) 2007-05-18

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