TW200723308A - Decoder for memory device with loading capacitor - Google Patents
Decoder for memory device with loading capacitorInfo
- Publication number
- TW200723308A TW200723308A TW095136505A TW95136505A TW200723308A TW 200723308 A TW200723308 A TW 200723308A TW 095136505 A TW095136505 A TW 095136505A TW 95136505 A TW95136505 A TW 95136505A TW 200723308 A TW200723308 A TW 200723308A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- high voltage
- voltage
- loading capacitor
- decoder
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/243,078 US20070076513A1 (en) | 2005-10-04 | 2005-10-04 | Decoder for memory device with loading capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200723308A true TW200723308A (en) | 2007-06-16 |
Family
ID=37709423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095136505A TW200723308A (en) | 2005-10-04 | 2006-10-02 | Decoder for memory device with loading capacitor |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20070076513A1 (zh) |
| TW (1) | TW200723308A (zh) |
| WO (1) | WO2007044226A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502607B (zh) * | 2009-09-16 | 2015-10-01 | Advanced Risc Mach Ltd | 用於當在記憶體中存取儲存格時將升壓電壓位準施加至存取控制線的裝置、方法及構件 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8842489B2 (en) * | 2012-03-15 | 2014-09-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fast-switching word line driver |
| KR101922931B1 (ko) * | 2015-11-03 | 2018-11-28 | 주식회사 아이씨티케이 홀딩스 | 보안 장치 및 그 동작 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3571494A (en) * | 1966-07-08 | 1971-03-16 | Hughes Aircraft Co | Television bandwidth reduction |
| US5202855A (en) * | 1991-01-14 | 1993-04-13 | Motorola, Inc. | DRAM with a controlled boosted voltage level shifting driver |
| US5247241A (en) * | 1991-10-21 | 1993-09-21 | Silicon Systems, Inc. | Frequency and capacitor based constant current source |
| WO1997022971A1 (en) * | 1995-12-20 | 1997-06-26 | Intel Corporation | A negative voltage switch architecture for a nonvolatile memory |
| JP3309822B2 (ja) * | 1999-01-12 | 2002-07-29 | 日本電気株式会社 | 半導体記憶装置及びその試験方法 |
| US6275425B1 (en) * | 2000-11-16 | 2001-08-14 | Ramtron International Corporation | Ferroelectric voltage boost circuits |
| US6535424B2 (en) * | 2001-07-25 | 2003-03-18 | Advanced Micro Devices, Inc. | Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage |
| US7085190B2 (en) * | 2004-09-16 | 2006-08-01 | Stmicroelectronics, Inc. | Variable boost voltage row driver circuit and method, and memory device and system including same |
-
2005
- 2005-10-04 US US11/243,078 patent/US20070076513A1/en not_active Abandoned
-
2006
- 2006-09-26 WO PCT/US2006/037517 patent/WO2007044226A1/en active Application Filing
- 2006-10-02 TW TW095136505A patent/TW200723308A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502607B (zh) * | 2009-09-16 | 2015-10-01 | Advanced Risc Mach Ltd | 用於當在記憶體中存取儲存格時將升壓電壓位準施加至存取控制線的裝置、方法及構件 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007044226A1 (en) | 2007-04-19 |
| US20070076513A1 (en) | 2007-04-05 |
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