TW200723308A - Decoder for memory device with loading capacitor - Google Patents

Decoder for memory device with loading capacitor

Info

Publication number
TW200723308A
TW200723308A TW095136505A TW95136505A TW200723308A TW 200723308 A TW200723308 A TW 200723308A TW 095136505 A TW095136505 A TW 095136505A TW 95136505 A TW95136505 A TW 95136505A TW 200723308 A TW200723308 A TW 200723308A
Authority
TW
Taiwan
Prior art keywords
memory device
high voltage
voltage
loading capacitor
decoder
Prior art date
Application number
TW095136505A
Other languages
English (en)
Inventor
Nian Yang
Fan Wan Lai
Hounien Chen
Original Assignee
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc filed Critical Spansion Llc
Publication of TW200723308A publication Critical patent/TW200723308A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
TW095136505A 2005-10-04 2006-10-02 Decoder for memory device with loading capacitor TW200723308A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/243,078 US20070076513A1 (en) 2005-10-04 2005-10-04 Decoder for memory device with loading capacitor

Publications (1)

Publication Number Publication Date
TW200723308A true TW200723308A (en) 2007-06-16

Family

ID=37709423

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136505A TW200723308A (en) 2005-10-04 2006-10-02 Decoder for memory device with loading capacitor

Country Status (3)

Country Link
US (1) US20070076513A1 (zh)
TW (1) TW200723308A (zh)
WO (1) WO2007044226A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502607B (zh) * 2009-09-16 2015-10-01 Advanced Risc Mach Ltd 用於當在記憶體中存取儲存格時將升壓電壓位準施加至存取控制線的裝置、方法及構件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8842489B2 (en) * 2012-03-15 2014-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Fast-switching word line driver
CN108780491A (zh) * 2015-11-03 2018-11-09 Ictk控股有限公司 安全装置及其操作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571494A (en) * 1966-07-08 1971-03-16 Hughes Aircraft Co Television bandwidth reduction
US5202855A (en) * 1991-01-14 1993-04-13 Motorola, Inc. DRAM with a controlled boosted voltage level shifting driver
US5247241A (en) * 1991-10-21 1993-09-21 Silicon Systems, Inc. Frequency and capacitor based constant current source
WO1997022971A1 (en) * 1995-12-20 1997-06-26 Intel Corporation A negative voltage switch architecture for a nonvolatile memory
JP3309822B2 (ja) * 1999-01-12 2002-07-29 日本電気株式会社 半導体記憶装置及びその試験方法
US6275425B1 (en) * 2000-11-16 2001-08-14 Ramtron International Corporation Ferroelectric voltage boost circuits
US6535424B2 (en) * 2001-07-25 2003-03-18 Advanced Micro Devices, Inc. Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage
US7085190B2 (en) * 2004-09-16 2006-08-01 Stmicroelectronics, Inc. Variable boost voltage row driver circuit and method, and memory device and system including same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502607B (zh) * 2009-09-16 2015-10-01 Advanced Risc Mach Ltd 用於當在記憶體中存取儲存格時將升壓電壓位準施加至存取控制線的裝置、方法及構件

Also Published As

Publication number Publication date
US20070076513A1 (en) 2007-04-05
WO2007044226A1 (en) 2007-04-19

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