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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW94131672ApriorityCriticalpatent/TWI297178B/en
Publication of TW200713432ApublicationCriticalpatent/TW200713432A/en
Application grantedgrantedCritical
Publication of TWI297178BpublicationCriticalpatent/TWI297178B/en
A salicide process includes providing a substrate, in which the surface of the substrate contains at least a silicon layer; performing a degas process on the substrate; performing a cooling process on the substrate; depositing a metal layer over the surface of the substrate, in which the surface of the metal layer and the surface of the silicon layer are in contact with each other; and removing the unreacted metal layer.