TW200713307A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW200713307A
TW200713307A TW095123946A TW95123946A TW200713307A TW 200713307 A TW200713307 A TW 200713307A TW 095123946 A TW095123946 A TW 095123946A TW 95123946 A TW95123946 A TW 95123946A TW 200713307 A TW200713307 A TW 200713307A
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
sense amplifier
response
line
Prior art date
Application number
TW095123946A
Other languages
Chinese (zh)
Other versions
TWI317522B (en
Inventor
Sung-Joo Ha
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200713307A publication Critical patent/TW200713307A/en
Application granted granted Critical
Publication of TWI317522B publication Critical patent/TWI317522B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)

Abstract

A semiconductor memory device includes an I/O line, a first sense amplifier connected to the first I/O line to amplify a signal applied on the first I/O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.
TW095123946A 2005-09-28 2006-06-30 Semiconductor memory device TWI317522B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050090863 2005-09-28
KR1020050118918A KR100650370B1 (en) 2005-09-28 2005-12-07 Semiconductor memory device

Publications (2)

Publication Number Publication Date
TW200713307A true TW200713307A (en) 2007-04-01
TWI317522B TWI317522B (en) 2009-11-21

Family

ID=37713742

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123946A TWI317522B (en) 2005-09-28 2006-06-30 Semiconductor memory device

Country Status (3)

Country Link
KR (1) KR100650370B1 (en)
CN (1) CN1967710B (en)
TW (1) TWI317522B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102163523B1 (en) * 2014-03-05 2020-10-08 에스케이하이닉스 주식회사 Amplifier circuit and semiconductor memory device including the same
KR20220006927A (en) 2020-07-09 2022-01-18 삼성전자주식회사 Memory controller including a interconnect circuit, and memory system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972374A (en) * 1989-12-27 1990-11-20 Motorola, Inc. Output amplifying stage with power saving feature
CN1137492C (en) * 1997-02-17 2004-02-04 株式会社日立制作所 Semiconductor integrated circuit device
JP3933769B2 (en) * 1997-10-20 2007-06-20 富士通株式会社 Semiconductor memory device

Also Published As

Publication number Publication date
CN1967710A (en) 2007-05-23
CN1967710B (en) 2012-05-16
TWI317522B (en) 2009-11-21
KR100650370B1 (en) 2006-11-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees