TW200705649A - Method for manufacturing SIMOX wafer and SIMOX wafer manufactured thereby - Google Patents
Method for manufacturing SIMOX wafer and SIMOX wafer manufactured therebyInfo
- Publication number
- TW200705649A TW200705649A TW094125293A TW94125293A TW200705649A TW 200705649 A TW200705649 A TW 200705649A TW 094125293 A TW094125293 A TW 094125293A TW 94125293 A TW94125293 A TW 94125293A TW 200705649 A TW200705649 A TW 200705649A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon wafer
- simox wafer
- manufacturing
- oxygen ions
- etching
- Prior art date
Links
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Element Separation (AREA)
Abstract
This method for manufacturing a SIMOX wafer includes a step of doping oxygen ions in a silicon wafer, a step of cleaning the silicon wafer in which the oxygen ions were doped, and a step of annealing the silicon wafer which was cleaned, thereby forming a buried oxide layer in the silicon wafer, wherein the method further comprises a step of soaking the silicon wafer in a hydrofluoric acid solution after doping the oxygen ions and before cleaning the silicon wafer, thereby etching a SiO2 layer which is formed in a surface of the silicon wafer, and an etching rate of the hydrofluoric acid solution which is used in the step of etching to etch the SiO2 layer is from 150 to 3000 Å/min.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004024330A JP2005217312A (en) | 2004-01-30 | 2004-01-30 | Method for manufacturing simox wafer and simox wafer manufactured by the method |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI263329B TWI263329B (en) | 2006-10-01 |
TW200705649A true TW200705649A (en) | 2007-02-01 |
Family
ID=34907048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94125293A TWI263329B (en) | 2004-01-30 | 2005-07-26 | Method for manufacturing SIMOX wafer and SIMOX wafer manufactured thereby |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2005217312A (en) |
TW (1) | TWI263329B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227424A (en) * | 2006-02-21 | 2007-09-06 | Sumco Corp | Production process of simox wafer |
CN102623304B (en) * | 2011-01-30 | 2015-03-25 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
US11798802B2 (en) | 2022-02-11 | 2023-10-24 | Globalwafers Co., Ltd. | Methods for stripping and cleaning semiconductor structures |
-
2004
- 2004-01-30 JP JP2004024330A patent/JP2005217312A/en active Pending
-
2005
- 2005-07-26 TW TW94125293A patent/TWI263329B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI263329B (en) | 2006-10-01 |
JP2005217312A (en) | 2005-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |