TW200705544A - Antireflection film and exposure method - Google Patents

Antireflection film and exposure method

Info

Publication number
TW200705544A
TW200705544A TW095106503A TW95106503A TW200705544A TW 200705544 A TW200705544 A TW 200705544A TW 095106503 A TW095106503 A TW 095106503A TW 95106503 A TW95106503 A TW 95106503A TW 200705544 A TW200705544 A TW 200705544A
Authority
TW
Taiwan
Prior art keywords
antireflection film
exposure
silicon substrate
exposure method
resist layer
Prior art date
Application number
TW095106503A
Other languages
English (en)
Other versions
TWI303451B (zh
Inventor
Nobuyuki Matsuzawa
Yoko Watanabe
Boontarika Thunnakart
Ken Ozawa
Yuko Yamaguchi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200705544A publication Critical patent/TW200705544A/zh
Application granted granted Critical
Publication of TWI303451B publication Critical patent/TWI303451B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Materials For Photolithography (AREA)
TW095106503A 2005-02-28 2006-02-27 Antireflection film and exposure method TW200705544A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005054202A JP2006242974A (ja) 2005-02-28 2005-02-28 反射防止膜及び露光方法

Publications (2)

Publication Number Publication Date
TW200705544A true TW200705544A (en) 2007-02-01
TWI303451B TWI303451B (zh) 2008-11-21

Family

ID=36932292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106503A TW200705544A (en) 2005-02-28 2006-02-27 Antireflection film and exposure method

Country Status (5)

Country Link
US (1) US7655377B2 (zh)
JP (1) JP2006242974A (zh)
KR (1) KR20060095518A (zh)
CN (1) CN100524022C (zh)
TW (1) TW200705544A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4742943B2 (ja) * 2005-09-06 2011-08-10 ソニー株式会社 反射防止膜及び露光方法
US20090096106A1 (en) * 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
JP2010114308A (ja) * 2008-11-07 2010-05-20 Toshiba Corp 半導体装置の製造方法
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
JP2002214793A (ja) * 2001-01-22 2002-07-31 Mitsubishi Electric Corp 反射防止膜及び半導体装置の製造方法
JP2004153073A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2004325466A (ja) * 2003-03-04 2004-11-18 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト材料および該レジスト材料を用いたレジストパターン形成方法
JP4742943B2 (ja) * 2005-09-06 2011-08-10 ソニー株式会社 反射防止膜及び露光方法

Also Published As

Publication number Publication date
CN100524022C (zh) 2009-08-05
US7655377B2 (en) 2010-02-02
JP2006242974A (ja) 2006-09-14
TWI303451B (zh) 2008-11-21
KR20060095518A (ko) 2006-08-31
CN1828419A (zh) 2006-09-06
US20060194125A1 (en) 2006-08-31

Similar Documents

Publication Publication Date Title
TW200721256A (en) Antireflective film and exposure method
KR100879139B1 (ko) 위상 반전 마스크 및 이의 제조방법
JP4330622B2 (ja) フォトマスクブランク及び位相シフトマスク
US9864267B2 (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
TWI363247B (zh)
SG10201804507PA (en) Photomask Blank and Photomask
TWI644165B (zh) 空白遮罩、相位移轉遮罩之製造方法、相位移轉遮罩、以及半導體元件之製造方法（二）
EP2568335A3 (en) Photomask blank, photomask, and making method
JP2016164683A5 (zh)
TW200705544A (en) Antireflection film and exposure method
TW201612623A (en) Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
TW200643070A (en) Optical bodies including strippable boundary layers
TW200732832A (en) Mask blank and photomask
WO2002041041A3 (en) Optically active film composite
JP2015092281A5 (zh)
US20190196063A1 (en) Anti-reflection structure, display device and fabiraction method for anti-reflection structure
KR102427106B1 (ko) 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP2008116517A5 (zh)
TWI267125B (en) Phase shift mask and production method thereof and production method for semiconductor device
TW200643637A (en) Mask blanks
Dijkstra et al. Optimization of antireflection layers for deep-UV lithography
TW200725168A (en) Mask blanks, and method of producing a transfer mask
KR20080110467A (ko) 하프톤형 위상 시프트 마스크
TW200514135A (en) Photomask having an internal substantially transparent etch stop layer
KR101295235B1 (ko) 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees