TW200703652A - Amorphous silicon thin film transistor with dual gata structures and manufacturing method thereof - Google Patents

Amorphous silicon thin film transistor with dual gata structures and manufacturing method thereof

Info

Publication number
TW200703652A
TW200703652A TW094123808A TW94123808A TW200703652A TW 200703652 A TW200703652 A TW 200703652A TW 094123808 A TW094123808 A TW 094123808A TW 94123808 A TW94123808 A TW 94123808A TW 200703652 A TW200703652 A TW 200703652A
Authority
TW
Taiwan
Prior art keywords
gate
amorphous silicon
drain
source
dual
Prior art date
Application number
TW094123808A
Other languages
Chinese (zh)
Other versions
TWI250654B (en
Inventor
Chi-Wen Chen
Chung-Yu Liang
Jen-Chien Peng
Yuan-Chun Wu
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW94123808A priority Critical patent/TWI250654B/en
Application granted granted Critical
Publication of TWI250654B publication Critical patent/TWI250654B/en
Publication of TW200703652A publication Critical patent/TW200703652A/en

Links

Abstract

An amorphous silicon thin film transistor (a-Si TFT) with dual gate structures and a manufacturing method thereof are provided. The a-Si TFT comprises a substrate, a first gate, an amorphous silicon channel layer, a source, a drain, and a second gate. The first gate is formed on the substrate. The amorphous silicon channel layer is formed above the first gate. The source and the drain are formed above the amorphous silicon channel layer and correspond to the two ends of the first gate. The source and the drain are contacted with the two ends of the amorphous silicon channel layer. The second gate is formed above the source and the drain and corresponds to the first gate. The second gate is electrically connected to the first gate via a contact hole. The peripheral of the second gate overlaps part of that of the source and the drain. Moreover, the a-Si island is completely located inside the first gate.
TW94123808A 2005-07-13 2005-07-13 Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof TWI250654B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94123808A TWI250654B (en) 2005-07-13 2005-07-13 Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94123808A TWI250654B (en) 2005-07-13 2005-07-13 Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI250654B TWI250654B (en) 2006-03-01
TW200703652A true TW200703652A (en) 2007-01-16

Family

ID=37433098

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94123808A TWI250654B (en) 2005-07-13 2005-07-13 Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI250654B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464881B (en) * 2009-10-27 2014-12-11 Samsung Display Co Ltd Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor
US9166097B2 (en) 2012-06-07 2015-10-20 Innolux Corporation Thin film transistor substrate and manufacturing method thereof, display
US9269816B2 (en) 2012-09-11 2016-02-23 E Ink Holdings Inc. Thin film transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101432764B1 (en) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464881B (en) * 2009-10-27 2014-12-11 Samsung Display Co Ltd Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor
US9166097B2 (en) 2012-06-07 2015-10-20 Innolux Corporation Thin film transistor substrate and manufacturing method thereof, display
US9269816B2 (en) 2012-09-11 2016-02-23 E Ink Holdings Inc. Thin film transistor

Also Published As

Publication number Publication date
TWI250654B (en) 2006-03-01

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