TW200703652A - Amorphous silicon thin film transistor with dual gata structures and manufacturing method thereof - Google Patents
Amorphous silicon thin film transistor with dual gata structures and manufacturing method thereofInfo
- Publication number
- TW200703652A TW200703652A TW094123808A TW94123808A TW200703652A TW 200703652 A TW200703652 A TW 200703652A TW 094123808 A TW094123808 A TW 094123808A TW 94123808 A TW94123808 A TW 94123808A TW 200703652 A TW200703652 A TW 200703652A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- amorphous silicon
- drain
- source
- dual
- Prior art date
Links
Abstract
An amorphous silicon thin film transistor (a-Si TFT) with dual gate structures and a manufacturing method thereof are provided. The a-Si TFT comprises a substrate, a first gate, an amorphous silicon channel layer, a source, a drain, and a second gate. The first gate is formed on the substrate. The amorphous silicon channel layer is formed above the first gate. The source and the drain are formed above the amorphous silicon channel layer and correspond to the two ends of the first gate. The source and the drain are contacted with the two ends of the amorphous silicon channel layer. The second gate is formed above the source and the drain and corresponds to the first gate. The second gate is electrically connected to the first gate via a contact hole. The peripheral of the second gate overlaps part of that of the source and the drain. Moreover, the a-Si island is completely located inside the first gate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94123808A TWI250654B (en) | 2005-07-13 | 2005-07-13 | Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94123808A TWI250654B (en) | 2005-07-13 | 2005-07-13 | Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI250654B TWI250654B (en) | 2006-03-01 |
TW200703652A true TW200703652A (en) | 2007-01-16 |
Family
ID=37433098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94123808A TWI250654B (en) | 2005-07-13 | 2005-07-13 | Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI250654B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI464881B (en) * | 2009-10-27 | 2014-12-11 | Samsung Display Co Ltd | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor |
US9166097B2 (en) | 2012-06-07 | 2015-10-20 | Innolux Corporation | Thin film transistor substrate and manufacturing method thereof, display |
US9269816B2 (en) | 2012-09-11 | 2016-02-23 | E Ink Holdings Inc. | Thin film transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101432764B1 (en) * | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
-
2005
- 2005-07-13 TW TW94123808A patent/TWI250654B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI464881B (en) * | 2009-10-27 | 2014-12-11 | Samsung Display Co Ltd | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor |
US9166097B2 (en) | 2012-06-07 | 2015-10-20 | Innolux Corporation | Thin film transistor substrate and manufacturing method thereof, display |
US9269816B2 (en) | 2012-09-11 | 2016-02-23 | E Ink Holdings Inc. | Thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
TWI250654B (en) | 2006-03-01 |
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