TW200703446A - Transparent conductive film and method forming thereof, electrooptic device and electronic apparatus - Google Patents
Transparent conductive film and method forming thereof, electrooptic device and electronic apparatusInfo
- Publication number
- TW200703446A TW200703446A TW095117766A TW95117766A TW200703446A TW 200703446 A TW200703446 A TW 200703446A TW 095117766 A TW095117766 A TW 095117766A TW 95117766 A TW95117766 A TW 95117766A TW 200703446 A TW200703446 A TW 200703446A
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent conductive
- forming
- layered film
- conductive film
- functional liquid
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000007788 liquid Substances 0.000 abstract 6
- 238000007599 discharging Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000011859 microparticle Substances 0.000 abstract 1
- -1 polysiloxane Polymers 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/04—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149100A JP4438685B2 (ja) | 2005-05-23 | 2005-05-23 | 透明導電膜とその形成方法、電気光学装置、及び電子機器 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200703446A true TW200703446A (en) | 2007-01-16 |
Family
ID=37443836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095117766A TW200703446A (en) | 2005-05-23 | 2006-05-19 | Transparent conductive film and method forming thereof, electrooptic device and electronic apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060275539A1 (zh) |
JP (1) | JP4438685B2 (zh) |
KR (1) | KR100806191B1 (zh) |
CN (1) | CN100437917C (zh) |
TW (1) | TW200703446A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI609295B (zh) * | 2016-03-11 | 2017-12-21 | 致伸科技股份有限公司 | 按鈕結構及其製造方法以及應用該按鈕結構的遊戲控制器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4356740B2 (ja) * | 2006-11-29 | 2009-11-04 | セイコーエプソン株式会社 | 配線パターン形成方法、デバイスおよび電子機器 |
US7943862B2 (en) * | 2008-08-20 | 2011-05-17 | Electro Scientific Industries, Inc. | Method and apparatus for optically transparent via filling |
JP5405437B2 (ja) * | 2010-11-05 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | アイソレーション構造の形成方法 |
CN104246918B (zh) * | 2012-04-19 | 2017-02-22 | 柯尼卡美能达株式会社 | 透明导电性膜的制造方法、透明导电性膜及电子器件 |
CN105474140B (zh) * | 2013-08-05 | 2018-09-25 | 阿尔卑斯电气株式会社 | 透光性导电构件及其布图方法 |
KR102375191B1 (ko) | 2015-01-05 | 2022-03-17 | 삼성디스플레이 주식회사 | 포지티브형 감광성 실록산 수지 조성물 및 이를 포함하는 표시 장치 |
KR102579375B1 (ko) | 2016-02-05 | 2023-09-18 | 삼성디스플레이 주식회사 | 감광성 수지 조성물, 이를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1450412A3 (en) * | 1996-05-15 | 2005-03-09 | Seiko Epson Corporation | Thin film device and method for making |
CA2322714A1 (en) * | 1999-10-25 | 2001-04-25 | Ainissa G. Ramirez | Article comprising improved noble metal-based alloys and method for making the same |
JP4788852B2 (ja) * | 2000-07-25 | 2011-10-05 | 住友金属鉱山株式会社 | 透明導電性基材とその製造方法およびこの製造方法に用いられる透明コート層形成用塗布液と透明導電性基材が適用された表示装置 |
JP4042099B2 (ja) * | 2002-04-22 | 2008-02-06 | セイコーエプソン株式会社 | デバイスの製造方法、デバイス及び電子機器 |
JP4830254B2 (ja) * | 2003-01-23 | 2011-12-07 | セイコーエプソン株式会社 | 有機el装置の製造方法及び電子機器 |
JP2004361491A (ja) * | 2003-06-02 | 2004-12-24 | Seiko Epson Corp | カラーフィルタ基板の製造方法、エレクトロルミネッセンス基板の製造方法、電気光学装置及びその製造方法、並びに電子機器及びその製造方法 |
KR101100625B1 (ko) * | 2003-10-02 | 2012-01-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선 기판 및 그 제조방법, 및 박막트랜지스터 및 그제조방법 |
WO2005048354A1 (en) * | 2003-11-14 | 2005-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same |
US20050156176A1 (en) * | 2004-01-16 | 2005-07-21 | Rahul Gupta | Method for printing organic devices |
KR101155943B1 (ko) * | 2004-04-28 | 2012-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Mos 캐패시터 및 반도체 장치 |
-
2005
- 2005-05-23 JP JP2005149100A patent/JP4438685B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-08 US US11/382,094 patent/US20060275539A1/en not_active Abandoned
- 2006-05-19 TW TW095117766A patent/TW200703446A/zh unknown
- 2006-05-22 KR KR1020060045623A patent/KR100806191B1/ko not_active IP Right Cessation
- 2006-05-23 CN CNB2006100848726A patent/CN100437917C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI609295B (zh) * | 2016-03-11 | 2017-12-21 | 致伸科技股份有限公司 | 按鈕結構及其製造方法以及應用該按鈕結構的遊戲控制器 |
Also Published As
Publication number | Publication date |
---|---|
KR100806191B1 (ko) | 2008-02-22 |
JP2006331665A (ja) | 2006-12-07 |
US20060275539A1 (en) | 2006-12-07 |
KR20060121115A (ko) | 2006-11-28 |
CN1870226A (zh) | 2006-11-29 |
CN100437917C (zh) | 2008-11-26 |
JP4438685B2 (ja) | 2010-03-24 |
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