TW200644426A - Configurable logic and memory block, and programmable pass gate based configurable logic device - Google Patents

Configurable logic and memory block, and programmable pass gate based configurable logic device

Info

Publication number
TW200644426A
TW200644426A TW095115248A TW95115248A TW200644426A TW 200644426 A TW200644426 A TW 200644426A TW 095115248 A TW095115248 A TW 095115248A TW 95115248 A TW95115248 A TW 95115248A TW 200644426 A TW200644426 A TW 200644426A
Authority
TW
Taiwan
Prior art keywords
configurable logic
logic device
clmb
sram
memory block
Prior art date
Application number
TW095115248A
Other languages
Chinese (zh)
Other versions
TWI315610B (en
Inventor
Shine-Chien Chung
Yung-Chin Hou
Kun-Lung Chen
Yu-Chun Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/119,086 external-priority patent/US7401302B2/en
Priority claimed from US11/180,936 external-priority patent/US7350177B2/en
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200644426A publication Critical patent/TW200644426A/en
Application granted granted Critical
Publication of TWI315610B publication Critical patent/TWI315610B/en

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  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A configurable logic and memory block (CLMB) and a configurable logic device are disclosed. The CLMB includes one or more static random access memory (SRAM) cells, a first output module for generating a first output by reading at least one SRAM cell when the CLMB functions as an SRAM, a second output module for generating a second output by reading at least one SRAM cell when the CLMB functions as a program logic device (PLD), wherein data on one or more bitlines coupled to the SRAM cells are controllably feeding into the first and second output modules. The configurable logic device can provide various Boolean logic functions using pass gates.
TW095115248A 2005-04-29 2006-04-28 Configurable logic and memory block, and programmable pass gate based configurable logic device TWI315610B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/119,086 US7401302B2 (en) 2004-04-29 2005-04-29 System on chip development with reconfigurable multi-project wafer technology
US11/180,936 US7350177B2 (en) 2004-04-29 2005-07-13 Configurable logic and memory devices

Publications (2)

Publication Number Publication Date
TW200644426A true TW200644426A (en) 2006-12-16
TWI315610B TWI315610B (en) 2009-10-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW095115249A TWI321841B (en) 2005-04-29 2006-04-28 System on chip development with reconfigurable multi-project wafer technology
TW095115248A TWI315610B (en) 2005-04-29 2006-04-28 Configurable logic and memory block, and programmable pass gate based configurable logic device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW095115249A TWI321841B (en) 2005-04-29 2006-04-28 System on chip development with reconfigurable multi-project wafer technology

Country Status (3)

Country Link
JP (1) JP4730192B2 (en)
CN (3) CN101359908B (en)
TW (2) TWI321841B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130191572A1 (en) * 2012-01-23 2013-07-25 Qualcomm Incorporated Transaction ordering to avoid bus deadlocks
US10176855B2 (en) * 2013-11-21 2019-01-08 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional (3-D) write assist scheme for memory cells
US9275180B1 (en) * 2014-07-14 2016-03-01 Xilinx, Inc. Programmable integrated circuit having different types of configuration memory
KR102201566B1 (en) * 2017-08-18 2021-01-11 주식회사 엘지화학 Customized bms module and method for designing thereof
TWI661676B (en) * 2018-08-01 2019-06-01 新唐科技股份有限公司 Programmable array logic
CN110364203B (en) * 2019-06-20 2021-01-05 中山大学 Storage system supporting internal calculation of storage and calculation method
US11088693B2 (en) * 2019-07-08 2021-08-10 Hossein Asadi Configurable logic block for implementing a Boolean function
CN112106139A (en) * 2020-08-13 2020-12-18 长江存储科技有限责任公司 Flash memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695569B2 (en) * 1984-11-20 1994-11-24 富士通株式会社 Gate array LSI device
US5200907A (en) * 1990-04-16 1993-04-06 Tran Dzung J Transmission gate logic design method
JPH04240768A (en) * 1991-01-25 1992-08-28 Matsushita Electron Corp Read-only semiconductor memory device
JPH06224300A (en) * 1993-01-26 1994-08-12 Hitachi Ltd Designing method for semiconductor integrated circuit and semiconductor integrated circuit for evaluation
JP3407975B2 (en) * 1994-05-20 2003-05-19 株式会社半導体エネルギー研究所 Thin film semiconductor integrated circuit
US6237132B1 (en) * 1998-08-18 2001-05-22 International Business Machines Corporation Toggle based application specific core methodology
JP2002289817A (en) * 2001-03-27 2002-10-04 Toshiba Corp Semiconductor integrated circuit device and its manufacturing method
US7170315B2 (en) * 2003-07-31 2007-01-30 Actel Corporation Programmable system on a chip
US7032191B2 (en) * 2004-02-27 2006-04-18 Rapid Bridge Llc Method and architecture for integrated circuit design and manufacture

Also Published As

Publication number Publication date
TWI315610B (en) 2009-10-01
CN100538881C (en) 2009-09-09
CN101359908A (en) 2009-02-04
TWI321841B (en) 2010-03-11
CN100508190C (en) 2009-07-01
JP4730192B2 (en) 2011-07-20
CN1917082A (en) 2007-02-21
JP2006310869A (en) 2006-11-09
CN101359908B (en) 2010-08-18
CN1855485A (en) 2006-11-01
TW200723501A (en) 2007-06-16

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