TW200641562A - Polymer remover - Google Patents
Polymer removerInfo
- Publication number
- TW200641562A TW200641562A TW095107525A TW95107525A TW200641562A TW 200641562 A TW200641562 A TW 200641562A TW 095107525 A TW095107525 A TW 095107525A TW 95107525 A TW95107525 A TW 95107525A TW 200641562 A TW200641562 A TW 200641562A
- Authority
- TW
- Taiwan
- Prior art keywords
- post
- methods
- plasma processing
- polymer remover
- compositions
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title 1
- 238000000034 method Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B43/00—Arrangements for separating or purifying gases or liquids; Arrangements for vaporising the residuum of liquid refrigerant, e.g. by heat
- F25B43/003—Filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
- C11D7/30—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2400/00—General features or devices for refrigeration machines, plants or systems, combined heating and refrigeration systems or heat-pump systems, i.e. not limited to a particular subgroup of F25B
- F25B2400/16—Receivers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Drying Of Semiconductors (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66124905P | 2005-03-11 | 2005-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200641562A true TW200641562A (en) | 2006-12-01 |
Family
ID=36637007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095107525A TW200641562A (en) | 2005-03-11 | 2006-03-07 | Polymer remover |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060237392A1 (zh) |
EP (1) | EP1701218A3 (zh) |
JP (1) | JP2006253692A (zh) |
KR (1) | KR20060097658A (zh) |
CN (1) | CN1840624A (zh) |
TW (1) | TW200641562A (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
US7713885B2 (en) * | 2005-05-11 | 2010-05-11 | Micron Technology, Inc. | Methods of etching oxide, reducing roughness, and forming capacitor constructions |
TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
EP1931817A2 (en) * | 2005-08-19 | 2008-06-18 | Houghton Metal Finishing Company | Methods and compositions for acid treatment of a metal surface |
KR100836760B1 (ko) * | 2006-11-15 | 2008-06-10 | 삼성전자주식회사 | 세정 용액 및 이를 이용한 기판 세정 방법 |
FR2912151B1 (fr) * | 2007-02-05 | 2009-05-08 | Arkema France | Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange |
US20080234162A1 (en) * | 2007-03-21 | 2008-09-25 | General Chemical Performance Products Llc | Semiconductor etch residue remover and cleansing compositions |
KR20100082012A (ko) * | 2007-11-16 | 2010-07-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물 |
JP5561914B2 (ja) * | 2008-05-16 | 2014-07-30 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
US8227394B2 (en) * | 2008-11-07 | 2012-07-24 | Lam Research Corporation | Composition of a cleaning material for particle removal |
WO2012061010A2 (en) * | 2010-11-03 | 2012-05-10 | 3M Innovative Properties Company | Polymer etchant and method of using same |
KR101983202B1 (ko) * | 2011-06-01 | 2019-05-28 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | 구리, 텅스텐, 및 다공성의 유전 상수 κ가 낮은 유전체들에 대한 양립성이 향상된 반수성 중합체 제거 조성물 |
CN103975052B (zh) | 2011-10-05 | 2016-11-09 | 安万托特性材料股份有限公司 | 具有铜/唑类聚合物抑制作用的微电子衬底清洁组合物 |
US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
JP6112446B2 (ja) * | 2012-10-31 | 2017-04-12 | パナソニックIpマネジメント株式会社 | フォトレジスト剥離液組成物 |
KR101974224B1 (ko) * | 2012-11-09 | 2019-05-02 | 동우 화인켐 주식회사 | 접착 폴리머 제거용 조성물 |
US9158202B2 (en) * | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
SG11201707787SA (en) | 2015-03-31 | 2017-10-30 | Versum Mat Us Llc | Cleaning formulations |
CN106833962A (zh) * | 2016-12-26 | 2017-06-13 | 上海申和热磁电子有限公司 | 用于去除半导体蚀刻腔体陶瓷涂层零件污染物的清洗剂及其制备和应用 |
CN109985876B (zh) * | 2018-01-03 | 2021-08-20 | 蓝思科技(长沙)有限公司 | 用于退除手机玻璃后盖背胶的脱胶剂、手机玻璃后盖背胶的脱胶方法及手机玻璃后盖 |
CN108080334A (zh) * | 2018-01-22 | 2018-05-29 | 安徽神舟飞船胶业有限公司 | 一种使得粘贴于机器表面的玻璃胶易被清理的方法 |
WO2020166704A1 (ja) * | 2019-02-15 | 2020-08-20 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
WO2020166703A1 (ja) * | 2019-02-15 | 2020-08-20 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
JP7495672B2 (ja) * | 2019-03-05 | 2024-06-05 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
KR102181219B1 (ko) * | 2019-04-19 | 2020-11-20 | 동우 화인켐 주식회사 | 접착 폴리머 제거용 조성물 |
KR20230085905A (ko) * | 2020-10-09 | 2023-06-14 | 헨켈 아게 운트 코. 카게아아 | 전자 장치 부품용 세정제 |
KR102246300B1 (ko) * | 2021-03-19 | 2021-04-30 | 제이엔에프 주식회사 | 반도체 및 디스플레이 제조공정용 세정제 조성물 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
US4230523A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Etchant for silicon dioxide films disposed atop silicon or metallic silicides |
US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
US5421906A (en) * | 1993-04-05 | 1995-06-06 | Enclean Environmental Services Group, Inc. | Methods for removal of contaminants from surfaces |
US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JP3755776B2 (ja) * | 1996-07-11 | 2006-03-15 | 東京応化工業株式会社 | リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法 |
JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US6224785B1 (en) * | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
EP1138726B1 (en) * | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
US6350560B1 (en) * | 2000-08-07 | 2002-02-26 | Shipley Company, L.L.C. | Rinse composition |
US6828205B2 (en) * | 2002-02-07 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd | Method using wet etching to trim a critical dimension |
JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
TW200505975A (en) * | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
US7192910B2 (en) * | 2003-10-28 | 2007-03-20 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
CN101228481B (zh) * | 2005-02-25 | 2012-12-05 | Ekc技术公司 | 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法 |
-
2006
- 2006-03-01 EP EP06251063A patent/EP1701218A3/en not_active Withdrawn
- 2006-03-07 TW TW095107525A patent/TW200641562A/zh unknown
- 2006-03-08 JP JP2006062195A patent/JP2006253692A/ja active Pending
- 2006-03-09 KR KR1020060022156A patent/KR20060097658A/ko not_active Application Discontinuation
- 2006-03-10 CN CNA2006100596119A patent/CN1840624A/zh active Pending
- 2006-03-13 US US11/374,245 patent/US20060237392A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1701218A3 (en) | 2008-10-15 |
US20060237392A1 (en) | 2006-10-26 |
EP1701218A2 (en) | 2006-09-13 |
KR20060097658A (ko) | 2006-09-14 |
JP2006253692A (ja) | 2006-09-21 |
CN1840624A (zh) | 2006-10-04 |
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