TW200636863A - Trench filling method - Google Patents
Trench filling methodInfo
- Publication number
- TW200636863A TW200636863A TW095101060A TW95101060A TW200636863A TW 200636863 A TW200636863 A TW 200636863A TW 095101060 A TW095101060 A TW 095101060A TW 95101060 A TW95101060 A TW 95101060A TW 200636863 A TW200636863 A TW 200636863A
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- aluminum
- substrate
- filling
- filling method
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
- C23C18/10—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- H10P14/46—
-
- H10W20/056—
-
- H10W20/033—
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005011690 | 2005-01-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200636863A true TW200636863A (en) | 2006-10-16 |
| TWI377622B TWI377622B (enExample) | 2012-11-21 |
Family
ID=36692229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095101060A TW200636863A (en) | 2005-01-19 | 2006-01-11 | Trench filling method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7776766B2 (enExample) |
| JP (1) | JP5093448B2 (enExample) |
| TW (1) | TW200636863A (enExample) |
| WO (1) | WO2006077840A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008034578A (ja) * | 2006-07-28 | 2008-02-14 | Sony Corp | 半導体装置およびその製造方法 |
| TW200848543A (en) * | 2007-02-28 | 2008-12-16 | Jsr Corp | Composition for forming aluminum film and method for forming aluminum film |
| US20120276707A1 (en) * | 2011-04-28 | 2012-11-01 | Nanya Technology Corporation | Method for forming trench isolation |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06349833A (ja) | 1993-06-03 | 1994-12-22 | Sony Corp | 半導体装置におけるアルミニウム系配線 |
| JP2818557B2 (ja) * | 1995-07-28 | 1998-10-30 | 日本電気株式会社 | 金属薄膜の形成方法および形成装置 |
| JP2967734B2 (ja) | 1996-10-18 | 1999-10-25 | 日本電気株式会社 | 薄膜の形成方法 |
| US6228764B1 (en) * | 1997-11-12 | 2001-05-08 | Lg Semicon Co., Ltd. | Method of forming wiring in semiconductor device |
| KR100279067B1 (ko) | 1998-04-23 | 2001-01-15 | 신현국 | 화학증착용알루미늄화합물및그제조방법 |
| KR100407681B1 (ko) * | 2000-06-26 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
| JP4260387B2 (ja) * | 2001-10-29 | 2009-04-30 | 株式会社フジクラ | 貫通配線付き基板の製造方法、および充填金属部付き製品の製造方法 |
| JP3817201B2 (ja) * | 2002-04-19 | 2006-09-06 | Jsr株式会社 | 導電性膜形成用組成物、導電性膜およびその形成法 |
| JP2004103867A (ja) * | 2002-09-10 | 2004-04-02 | Fujikura Ltd | 微細孔への金属充填方法及びその装置 |
| JP3920802B2 (ja) * | 2003-03-28 | 2007-05-30 | Jsr株式会社 | 配線、電極およびそれらの形成方法 |
-
2006
- 2006-01-11 TW TW095101060A patent/TW200636863A/zh not_active IP Right Cessation
- 2006-01-11 US US11/814,256 patent/US7776766B2/en not_active Expired - Fee Related
- 2006-01-11 JP JP2006553901A patent/JP5093448B2/ja not_active Expired - Fee Related
- 2006-01-11 WO PCT/JP2006/300565 patent/WO2006077840A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2006077840A1 (ja) | 2008-06-19 |
| JP5093448B2 (ja) | 2012-12-12 |
| US20080194118A1 (en) | 2008-08-14 |
| US7776766B2 (en) | 2010-08-17 |
| TWI377622B (enExample) | 2012-11-21 |
| WO2006077840A1 (ja) | 2006-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |