TW200635044A - Quasi-planar and finfet-like transistors on bulk silicon - Google Patents
Quasi-planar and finfet-like transistors on bulk siliconInfo
- Publication number
- TW200635044A TW200635044A TW095111321A TW95111321A TW200635044A TW 200635044 A TW200635044 A TW 200635044A TW 095111321 A TW095111321 A TW 095111321A TW 95111321 A TW95111321 A TW 95111321A TW 200635044 A TW200635044 A TW 200635044A
- Authority
- TW
- Taiwan
- Prior art keywords
- doped
- finfet
- recessed channel
- edge
- quasi
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/094,879 US7564105B2 (en) | 2004-04-24 | 2005-03-30 | Quasi-plannar and FinFET-like transistors on bulk silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200635044A true TW200635044A (en) | 2006-10-01 |
TWI281257B TWI281257B (en) | 2007-05-11 |
Family
ID=37195525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95111321A TWI281257B (en) | 2005-03-30 | 2006-03-30 | Quasi-planar and FinFET-like transistors on bulk silicon |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN100470841C (zh) |
TW (1) | TWI281257B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI610445B (zh) * | 2011-12-22 | 2018-01-01 | 英特爾股份有限公司 | 具有頸部半導體本體的半導體裝置及形成具有變化寬度的半導體本體的方法 |
TWI809806B (zh) * | 2022-04-01 | 2023-07-21 | 南亞科技股份有限公司 | 半導體結構及其製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8726220B2 (en) * | 2011-04-29 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and methods for converting planar design to FinFET design |
US8816444B2 (en) * | 2011-04-29 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and methods for converting planar design to FinFET design |
US8629038B2 (en) | 2012-01-05 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs with vertical fins and methods for forming the same |
CN103426757B (zh) * | 2012-05-15 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Ω形鳍式场效应晶体管的形成方法 |
US8723268B2 (en) | 2012-06-13 | 2014-05-13 | Synopsys, Inc. | N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch |
US20160093672A1 (en) * | 2014-09-26 | 2016-03-31 | Qualcomm Incorporated | Logic high-k/metal gate 1t-1c rram mtp/otp devices |
US9768178B2 (en) * | 2015-11-11 | 2017-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device, static random access memory cell and manufacturing method of semiconductor device |
CN107492500B (zh) * | 2016-06-13 | 2021-09-17 | 格科微电子(上海)有限公司 | Cmos图像传感器的鳍式场效应晶体管的制作方法 |
CN111613534B (zh) * | 2019-02-26 | 2024-03-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
-
2006
- 2006-03-30 CN CNB2006100669340A patent/CN100470841C/zh active Active
- 2006-03-30 TW TW95111321A patent/TWI281257B/zh active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI610445B (zh) * | 2011-12-22 | 2018-01-01 | 英特爾股份有限公司 | 具有頸部半導體本體的半導體裝置及形成具有變化寬度的半導體本體的方法 |
US10319843B2 (en) | 2011-12-22 | 2019-06-11 | Intel Corporation | Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
US10651310B2 (en) | 2011-12-22 | 2020-05-12 | Intel Corporation | Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
US11164975B2 (en) | 2011-12-22 | 2021-11-02 | Intel Corporation | Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
US11784257B2 (en) | 2011-12-22 | 2023-10-10 | Intel Corporation | Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
TWI809806B (zh) * | 2022-04-01 | 2023-07-21 | 南亞科技股份有限公司 | 半導體結構及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI281257B (en) | 2007-05-11 |
CN100470841C (zh) | 2009-03-18 |
CN1855542A (zh) | 2006-11-01 |
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