TW200634181A - Electroplating composition and method - Google Patents

Electroplating composition and method

Info

Publication number
TW200634181A
TW200634181A TW094143573A TW94143573A TW200634181A TW 200634181 A TW200634181 A TW 200634181A TW 094143573 A TW094143573 A TW 094143573A TW 94143573 A TW94143573 A TW 94143573A TW 200634181 A TW200634181 A TW 200634181A
Authority
TW
Taiwan
Prior art keywords
electroplating
electroplating composition
composition
propylene oxide
amine
Prior art date
Application number
TW094143573A
Other languages
Chinese (zh)
Other versions
TWI298750B (en
Inventor
Chien-Hsueh Shih
Hung-Wen Su
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200634181A publication Critical patent/TW200634181A/en
Application granted granted Critical
Publication of TWI298750B publication Critical patent/TWI298750B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Abstract

In one embodiment, the composition comprises an electrolyte solution and an amine-based copolymer comprising monomer units of ethylene oxide and propylene oxide, with the propylene oxide present in a quantity of at least about 70 wt%. The method comprises electroplating a metal onto a substrate from the electroplating composition of the invention.
TW094143573A 2005-03-24 2005-12-09 Electroplating composition and method TWI298750B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/087,494 US20060213780A1 (en) 2005-03-24 2005-03-24 Electroplating composition and method

Publications (2)

Publication Number Publication Date
TW200634181A true TW200634181A (en) 2006-10-01
TWI298750B TWI298750B (en) 2008-07-11

Family

ID=37034102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094143573A TWI298750B (en) 2005-03-24 2005-12-09 Electroplating composition and method

Country Status (2)

Country Link
US (1) US20060213780A1 (en)
TW (1) TWI298750B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106609384A (en) * 2015-10-27 2017-05-03 罗门哈斯电子材料有限责任公司 Method of electroplating copper into a via on a substrate from an acid copper electroplating bath

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US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
CN102369315B (en) * 2009-04-07 2014-08-13 巴斯夫欧洲公司 Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR101759352B1 (en) * 2009-04-07 2017-07-18 바스프 에스이 Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115757A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
RU2529607C2 (en) * 2009-04-07 2014-09-27 Басф Се Composition for application of metal coating, containing inhibiting agent, for voidless filling of submicron elements
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
EP2427804B1 (en) 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
MY157093A (en) 2009-05-07 2016-04-29 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
RU2539897C2 (en) 2009-07-30 2015-01-27 Басф Се Metal coating composition containing suppressing agent for void-free filling of submicron surface elements
SG10201404301WA (en) 2009-07-30 2014-09-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102648258B (en) 2009-11-30 2015-04-08 巴斯夫欧洲公司 Process for removing bulk material layer from substrate and chemical mechanical polishing agent suitable for this process
EP2507824A4 (en) 2009-11-30 2013-09-25 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
KR101906135B1 (en) 2010-09-08 2018-10-10 바스프 에스이 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
SG10201506220PA (en) 2010-09-08 2015-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
JP2013540850A (en) 2010-09-08 2013-11-07 ビーエーエスエフ ソシエタス・ヨーロピア Aqueous abrasive composition containing N-substituted diazenium dioxide and / or N'-hydroxydiazenium oxide salt
KR101919750B1 (en) 2010-12-10 2018-11-19 바스프 에스이 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
EP3839103B1 (en) 2015-06-30 2023-07-19 MacDermid Enthone Inc. Cobalt filling of interconnects in microelectronics
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
CN115110126A (en) * 2022-06-14 2022-09-27 铜陵蔚屹新材料有限公司 Tin plating solution for tin plate of methanesulfonic acid system

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US4306987A (en) * 1979-11-19 1981-12-22 Basf Wyandotte Corporation Low-foaming nonionic surfactant for machine dishwashing detergent
US5209865A (en) * 1990-01-25 1993-05-11 Ciba-Geigy Corporation Conditioning solution for contact lenses and a method of using the same
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
KR100659544B1 (en) * 1999-11-12 2006-12-19 에바라 유지라이토 코포레이션 리미티드 Via-filling process
TWI400365B (en) * 2004-11-12 2013-07-01 Enthone Copper electrodeposition in microelectronics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106609384A (en) * 2015-10-27 2017-05-03 罗门哈斯电子材料有限责任公司 Method of electroplating copper into a via on a substrate from an acid copper electroplating bath
CN106609384B (en) * 2015-10-27 2018-11-06 罗门哈斯电子材料有限责任公司 The method of electro-coppering from through-hole of the acid copper electroplating bath liquid on substrate

Also Published As

Publication number Publication date
TWI298750B (en) 2008-07-11
US20060213780A1 (en) 2006-09-28

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