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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW94106100ApriorityCriticalpatent/TWI246189B/zh
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Publication of TWI246189BpublicationCriticalpatent/TWI246189B/zh
Publication of TW200633194ApublicationCriticalpatent/TW200633194A/zh
Mos transistor including multi-work function metal nitride gate electrode, cmos integrated circuit device including same, and related methods of manufacture