TW200633194A - Active pixel sensor - Google Patents

Active pixel sensor

Info

Publication number
TW200633194A
TW200633194A TW094106100A TW94106100A TW200633194A TW 200633194 A TW200633194 A TW 200633194A TW 094106100 A TW094106100 A TW 094106100A TW 94106100 A TW94106100 A TW 94106100A TW 200633194 A TW200633194 A TW 200633194A
Authority
TW
Taiwan
Prior art keywords
pixel sensor
active pixel
isolation
region
isolation region
Prior art date
Application number
TW094106100A
Other languages
Chinese (zh)
Other versions
TWI246189B (en
Inventor
Jhy-Jyi Sze
Jun-Bo Chen
Ming-Yi Wang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94106100A priority Critical patent/TWI246189B/en
Application granted granted Critical
Publication of TWI246189B publication Critical patent/TWI246189B/en
Publication of TW200633194A publication Critical patent/TW200633194A/en

Links

Abstract

An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.
TW94106100A 2005-03-01 2005-03-01 Active pixel sensor TWI246189B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94106100A TWI246189B (en) 2005-03-01 2005-03-01 Active pixel sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94106100A TWI246189B (en) 2005-03-01 2005-03-01 Active pixel sensor

Publications (2)

Publication Number Publication Date
TWI246189B TWI246189B (en) 2005-12-21
TW200633194A true TW200633194A (en) 2006-09-16

Family

ID=37191348

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94106100A TWI246189B (en) 2005-03-01 2005-03-01 Active pixel sensor

Country Status (1)

Country Link
TW (1) TWI246189B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053287B2 (en) 2006-09-29 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making multi-step photodiode junction structure for backside illuminated sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768059B2 (en) 2006-06-26 2010-08-03 Ememory Technology Inc. Nonvolatile single-poly memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053287B2 (en) 2006-09-29 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making multi-step photodiode junction structure for backside illuminated sensor
US8785984B2 (en) 2006-09-29 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making multi-step photodiode junction structure for backside illuminated sensor

Also Published As

Publication number Publication date
TWI246189B (en) 2005-12-21

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