TW200633194A - Active pixel sensor - Google Patents
Active pixel sensorInfo
- Publication number
- TW200633194A TW200633194A TW094106100A TW94106100A TW200633194A TW 200633194 A TW200633194 A TW 200633194A TW 094106100 A TW094106100 A TW 094106100A TW 94106100 A TW94106100 A TW 94106100A TW 200633194 A TW200633194 A TW 200633194A
- Authority
- TW
- Taiwan
- Prior art keywords
- pixel sensor
- active pixel
- isolation
- region
- isolation region
- Prior art date
Links
Abstract
An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94106100A TWI246189B (en) | 2005-03-01 | 2005-03-01 | Active pixel sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94106100A TWI246189B (en) | 2005-03-01 | 2005-03-01 | Active pixel sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI246189B TWI246189B (en) | 2005-12-21 |
TW200633194A true TW200633194A (en) | 2006-09-16 |
Family
ID=37191348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94106100A TWI246189B (en) | 2005-03-01 | 2005-03-01 | Active pixel sensor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI246189B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8053287B2 (en) | 2006-09-29 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7768059B2 (en) | 2006-06-26 | 2010-08-03 | Ememory Technology Inc. | Nonvolatile single-poly memory device |
-
2005
- 2005-03-01 TW TW94106100A patent/TWI246189B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8053287B2 (en) | 2006-09-29 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
US8785984B2 (en) | 2006-09-29 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
Also Published As
Publication number | Publication date |
---|---|
TWI246189B (en) | 2005-12-21 |
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