TW200629369A - Method of treating surface of photoresist layer and method of forming patterned photoresist layer - Google Patents

Method of treating surface of photoresist layer and method of forming patterned photoresist layer

Info

Publication number
TW200629369A
TW200629369A TW094103932A TW94103932A TW200629369A TW 200629369 A TW200629369 A TW 200629369A TW 094103932 A TW094103932 A TW 094103932A TW 94103932 A TW94103932 A TW 94103932A TW 200629369 A TW200629369 A TW 200629369A
Authority
TW
Taiwan
Prior art keywords
photoresist layer
treating surface
forming patterned
patterned photoresist
forming
Prior art date
Application number
TW094103932A
Other languages
Chinese (zh)
Other versions
TWI285915B (en
Inventor
Kao-Su Huang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94103932A priority Critical patent/TWI285915B/en
Publication of TW200629369A publication Critical patent/TW200629369A/en
Application granted granted Critical
Publication of TWI285915B publication Critical patent/TWI285915B/en

Links

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  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of treating the surface of a photoresist layer is described. After forming a patterned photoresist layer on a wafer, the photoresist layer is proceeded by a surface treating step including at least HBr or HI as reactive gas for forming a hard-skin on the surface of the photoresist layer. Wherein, the surface treating step and the etching step are in-situ.
TW94103932A 2005-02-05 2005-02-05 Method of treating surface of photoresist layer and method of forming patterned photoresist layer TWI285915B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94103932A TWI285915B (en) 2005-02-05 2005-02-05 Method of treating surface of photoresist layer and method of forming patterned photoresist layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94103932A TWI285915B (en) 2005-02-05 2005-02-05 Method of treating surface of photoresist layer and method of forming patterned photoresist layer

Publications (2)

Publication Number Publication Date
TW200629369A true TW200629369A (en) 2006-08-16
TWI285915B TWI285915B (en) 2007-08-21

Family

ID=39457400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94103932A TWI285915B (en) 2005-02-05 2005-02-05 Method of treating surface of photoresist layer and method of forming patterned photoresist layer

Country Status (1)

Country Link
TW (1) TWI285915B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834204A (en) * 2020-08-28 2020-10-27 上海华力微电子有限公司 Method for manufacturing semiconductor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834204A (en) * 2020-08-28 2020-10-27 上海华力微电子有限公司 Method for manufacturing semiconductor structure
CN111834204B (en) * 2020-08-28 2023-02-10 上海华力微电子有限公司 Preparation method of semiconductor structure

Also Published As

Publication number Publication date
TWI285915B (en) 2007-08-21

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