TW200626293A - CMP polishing pad having grooves arranged to improve polishing medium utilization - Google Patents

CMP polishing pad having grooves arranged to improve polishing medium utilization

Info

Publication number
TW200626293A
TW200626293A TW094142889A TW94142889A TW200626293A TW 200626293 A TW200626293 A TW 200626293A TW 094142889 A TW094142889 A TW 094142889A TW 94142889 A TW94142889 A TW 94142889A TW 200626293 A TW200626293 A TW 200626293A
Authority
TW
Taiwan
Prior art keywords
grooves arranged
pad
medium utilization
polishing
improve
Prior art date
Application number
TW094142889A
Other languages
English (en)
Inventor
Gregory P Muldowney
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200626293A publication Critical patent/TW200626293A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094142889A 2004-12-14 2005-12-06 CMP polishing pad having grooves arranged to improve polishing medium utilization TW200626293A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/012,437 US7059950B1 (en) 2004-12-14 2004-12-14 CMP polishing pad having grooves arranged to improve polishing medium utilization

Publications (1)

Publication Number Publication Date
TW200626293A true TW200626293A (en) 2006-08-01

Family

ID=36576371

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142889A TW200626293A (en) 2004-12-14 2005-12-06 CMP polishing pad having grooves arranged to improve polishing medium utilization

Country Status (7)

Country Link
US (1) US7059950B1 (zh)
JP (1) JP2006167907A (zh)
KR (1) KR20060067139A (zh)
CN (1) CN100419966C (zh)
DE (1) DE102005059547A1 (zh)
FR (1) FR2879952B1 (zh)
TW (1) TW200626293A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449598B (zh) * 2008-12-23 2014-08-21 羅門哈斯電子材料Ｃｍｐ控股公司 高速研磨方法
TWI458591B (zh) * 2008-12-23 2014-11-01 羅門哈斯電子材料Ｃｍｐ控股公司 高速溝槽圖案

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7520798B2 (en) * 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7311590B1 (en) 2007-01-31 2007-12-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to retain slurry on the pad texture
US7635290B2 (en) * 2007-08-15 2009-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interpenetrating network for chemical mechanical polishing
CN101422882B (zh) * 2007-10-31 2015-05-20 智胜科技股份有限公司 研磨垫及研磨方法
CN101497182B (zh) * 2008-01-31 2013-05-08 智胜科技股份有限公司 研磨垫及其制造方法
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
CN101987431B (zh) * 2009-08-06 2015-08-19 智胜科技股份有限公司 研磨方法、研磨垫与研磨系统
US9308620B2 (en) * 2013-09-18 2016-04-12 Texas Instruments Incorporated Permeated grooving in CMP polishing pads
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
KR20160147917A (ko) * 2014-05-02 2016-12-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 불연속된 구조화된 연마 용품 및 작업편의 연마 방법
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
WO2017074773A1 (en) 2015-10-30 2017-05-04 Applied Materials, Inc. An apparatus and method of forming a polishing article that has a desired zeta potential
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US20170232573A1 (en) * 2016-02-12 2017-08-17 Kabushiki Kaisha Toshiba Polishing member and semiconductor manufacturing method
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN115070606B (zh) * 2022-06-30 2023-11-14 西安奕斯伟材料科技股份有限公司 一种用于对硅片进行抛光的抛光垫和抛光设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JPH11156699A (ja) * 1997-11-25 1999-06-15 Speedfam Co Ltd 平面研磨用パッド
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
JP2000042901A (ja) * 1998-07-29 2000-02-15 Toshiba Ceramics Co Ltd 研磨布およびその製造方法
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
US20020068516A1 (en) * 1999-12-13 2002-06-06 Applied Materials, Inc Apparatus and method for controlled delivery of slurry to a region of a polishing device
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
JP2002200555A (ja) * 2000-12-28 2002-07-16 Ebara Corp 研磨工具および該研磨工具を具備したポリッシング装置
US6843711B1 (en) * 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449598B (zh) * 2008-12-23 2014-08-21 羅門哈斯電子材料Ｃｍｐ控股公司 高速研磨方法
TWI458591B (zh) * 2008-12-23 2014-11-01 羅門哈斯電子材料Ｃｍｐ控股公司 高速溝槽圖案

Also Published As

Publication number Publication date
JP2006167907A (ja) 2006-06-29
US20060128291A1 (en) 2006-06-15
DE102005059547A1 (de) 2006-07-13
FR2879952A1 (fr) 2006-06-30
US7059950B1 (en) 2006-06-13
CN100419966C (zh) 2008-09-17
FR2879952B1 (fr) 2009-04-17
KR20060067139A (ko) 2006-06-19
CN1790625A (zh) 2006-06-21

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