TW200620659A - High voltage devices and method of fabricating the same - Google Patents
High voltage devices and method of fabricating the sameInfo
- Publication number
- TW200620659A TW200620659A TW094143862A TW94143862A TW200620659A TW 200620659 A TW200620659 A TW 200620659A TW 094143862 A TW094143862 A TW 094143862A TW 94143862 A TW94143862 A TW 94143862A TW 200620659 A TW200620659 A TW 200620659A
- Authority
- TW
- Taiwan
- Prior art keywords
- conductivity
- type
- substrate
- doped
- doped region
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63581904P | 2004-12-13 | 2004-12-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200620659A true TW200620659A (en) | 2006-06-16 |
TWI263334B TWI263334B (en) | 2006-10-01 |
Family
ID=36907814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094143862A TWI263334B (en) | 2004-12-13 | 2005-12-12 | High voltage devices and method of fabricating the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US7485523B2 (zh) |
CN (2) | CN100524821C (zh) |
TW (1) | TWI263334B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI747235B (zh) * | 2020-04-16 | 2021-11-21 | 世界先進積體電路股份有限公司 | 高壓半導體裝置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100887030B1 (ko) | 2007-05-29 | 2009-03-04 | 주식회사 동부하이텍 | 반도체 소자의 고전압 드리프트 형성 방법 |
US8420488B2 (en) * | 2007-09-11 | 2013-04-16 | United Microelectronics Corp. | Method of fabricating high voltage device |
US7888734B2 (en) * | 2008-12-04 | 2011-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-voltage MOS devices having gates extending into recesses of substrates |
US8492835B1 (en) | 2012-01-20 | 2013-07-23 | United Microelectronics Corporation | High voltage MOSFET device |
US9219146B2 (en) * | 2013-12-27 | 2015-12-22 | Monolithic Power Systems, Inc. | High voltage PMOS and the method for forming thereof |
TWI685978B (zh) * | 2019-01-04 | 2020-02-21 | 力晶積成電子製造股份有限公司 | 半導體元件及其製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096610A (en) * | 1996-03-29 | 2000-08-01 | Intel Corporation | Transistor suitable for high voltage circuit |
EP2034518A3 (en) * | 1998-07-22 | 2009-06-03 | STMicroelectronics S.r.l. | Electronic devices comprising HV transistors and LV transistors, with salicided junctions |
US6451655B1 (en) * | 1999-08-26 | 2002-09-17 | Stmicroelectronics S.R.L. | Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure of limited planar dimension |
-
2005
- 2005-12-12 TW TW094143862A patent/TWI263334B/zh active
- 2005-12-12 US US11/164,949 patent/US7485523B2/en active Active
- 2005-12-13 CN CNB2005101317170A patent/CN100524821C/zh active Active
- 2005-12-13 CN CNU2005201366416U patent/CN2879425Y/zh not_active Expired - Lifetime
-
2008
- 2008-06-04 US US12/132,631 patent/US7598551B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI747235B (zh) * | 2020-04-16 | 2021-11-21 | 世界先進積體電路股份有限公司 | 高壓半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN1815754A (zh) | 2006-08-09 |
TWI263334B (en) | 2006-10-01 |
US20060240628A1 (en) | 2006-10-26 |
US7598551B2 (en) | 2009-10-06 |
CN2879425Y (zh) | 2007-03-14 |
CN100524821C (zh) | 2009-08-05 |
US7485523B2 (en) | 2009-02-03 |
US20080277744A1 (en) | 2008-11-13 |
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