TW200618169A - Method of forming a component having dielectric sub-layers - Google Patents
Method of forming a component having dielectric sub-layersInfo
- Publication number
- TW200618169A TW200618169A TW094132826A TW94132826A TW200618169A TW 200618169 A TW200618169 A TW 200618169A TW 094132826 A TW094132826 A TW 094132826A TW 94132826 A TW94132826 A TW 94132826A TW 200618169 A TW200618169 A TW 200618169A
- Authority
- TW
- Taiwan
- Prior art keywords
- layers
- component
- forming
- dielectric sub
- dielectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/971,337 US7265063B2 (en) | 2004-10-22 | 2004-10-22 | Method of forming a component having dielectric sub-layers |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200618169A true TW200618169A (en) | 2006-06-01 |
Family
ID=36205427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094132826A TW200618169A (en) | 2004-10-22 | 2005-09-22 | Method of forming a component having dielectric sub-layers |
Country Status (5)
Country | Link |
---|---|
US (2) | US7265063B2 (zh) |
EP (1) | EP1807867A2 (zh) |
CN (1) | CN101069273A (zh) |
TW (1) | TW200618169A (zh) |
WO (1) | WO2006047025A2 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP4502382B2 (ja) * | 2004-11-02 | 2010-07-14 | キヤノン株式会社 | 有機トランジスタ |
EP1770788A3 (en) * | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
US7960718B2 (en) * | 2006-07-10 | 2011-06-14 | Applied Nanotech Holdings, Inc. | Printable thin-film transistor for flexible electronics |
US8659158B2 (en) * | 2006-08-16 | 2014-02-25 | Funai Electric Co., Ltd. | Thermally inkjettable acrylic dielectric ink formulation and process |
CN101399316B (zh) * | 2007-09-27 | 2010-09-15 | 财团法人工业技术研究院 | 有机薄膜晶体管以及控制高分子材料层表面能的方法 |
KR101270174B1 (ko) * | 2007-12-03 | 2013-05-31 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터의 제조방법 |
US8106387B2 (en) * | 2008-10-14 | 2012-01-31 | Xerox Corporation | Organic thin film transistors |
US8969867B2 (en) * | 2012-01-18 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102123529B1 (ko) * | 2013-03-28 | 2020-06-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR102581899B1 (ko) * | 2015-11-04 | 2023-09-21 | 삼성전자주식회사 | 투명 전극 및 이를 포함하는 소자 |
US11911825B2 (en) * | 2018-03-13 | 2024-02-27 | Hewlett-Packard Development Company, L.P. | Fusing electronic components into three-dimensional objects via additive manufacturing processes |
GB2577112A (en) * | 2018-09-14 | 2020-03-18 | Flexenable Ltd | Forming dielectric for electronic devices |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4609614A (en) * | 1985-06-24 | 1986-09-02 | Rca Corporation | Process of using absorptive layer in optical lithography with overlying photoresist layer to form relief pattern on substrate |
US5399604A (en) * | 1992-07-24 | 1995-03-21 | Japan Synthetic Rubber Co., Ltd. | Epoxy group-containing resin compositions |
US5796708A (en) * | 1993-06-11 | 1998-08-18 | Kabushiki Kaisha Toshiba | Optical recording medium and recording system |
WO1998020557A1 (en) * | 1996-11-08 | 1998-05-14 | W.L. Gore & Associates, Inc. | Method for reducing via inductance in an electronic assembly and device |
DE69931334T2 (de) * | 1998-12-22 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd., Kadoma | Flexibler Dünnfilmkondensator und Herstellungsverfahren |
TW495809B (en) * | 2000-02-28 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, thin film forming method, and self-light emitting device |
US6936533B2 (en) * | 2000-12-08 | 2005-08-30 | Samsung Electronics, Co., Ltd. | Method of fabricating semiconductor devices having low dielectric interlayer insulation layer |
KR100518051B1 (ko) * | 2001-01-11 | 2005-09-28 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | 능동 매트릭스형 액정 디스플레이 장치와 그 제조 방법 |
US6656313B2 (en) * | 2001-06-11 | 2003-12-02 | International Business Machines Corporation | Structure and method for improved adhesion between two polymer films |
JP2003100738A (ja) | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
JP2003273111A (ja) * | 2002-03-14 | 2003-09-26 | Seiko Epson Corp | 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法 |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
US7842347B2 (en) * | 2005-06-09 | 2010-11-30 | Lexmark International, Inc. | Inkjet printing of layers |
-
2004
- 2004-10-22 US US10/971,337 patent/US7265063B2/en not_active Expired - Fee Related
-
2005
- 2005-09-22 WO PCT/US2005/034151 patent/WO2006047025A2/en active Application Filing
- 2005-09-22 TW TW094132826A patent/TW200618169A/zh unknown
- 2005-09-22 EP EP05810251A patent/EP1807867A2/en not_active Withdrawn
- 2005-09-22 CN CNA2005800360665A patent/CN101069273A/zh active Pending
-
2007
- 2007-07-16 US US11/778,201 patent/US8143706B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1807867A2 (en) | 2007-07-18 |
US7265063B2 (en) | 2007-09-04 |
US20070284701A1 (en) | 2007-12-13 |
WO2006047025A2 (en) | 2006-05-04 |
CN101069273A (zh) | 2007-11-07 |
US8143706B2 (en) | 2012-03-27 |
US20060086976A1 (en) | 2006-04-27 |
WO2006047025A3 (en) | 2006-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200618169A (en) | Method of forming a component having dielectric sub-layers | |
TW200620490A (en) | Method of forming a thin film component | |
TW200625453A (en) | Method of forming a solution processed transistor having a multilayer dielectric | |
TW200623322A (en) | A method to form an interconnect | |
TW200612563A (en) | Method of forming a solution processed device | |
TW200618110A (en) | Method of forming a transistor having a dual layer dielectric | |
TW200707466A (en) | Conductive patterning | |
MXPA03002617A (es) | Metodo y aparato para mejorar el rendimiento de sistemas de filtracion de grava. | |
TW200614594A (en) | Multi-portion socket and related apparatuses | |
AU2003900746A0 (en) | Methods, systems and apparatus (NPS041) | |
EP2579271B8 (en) | Particle-optical systems and arrangements and particle-optical components for such systems and arrangements | |
WO2003005244A3 (en) | Method and apparatus for peer-to-peer services | |
AU2003900865A0 (en) | Methods, systems and apparatus (NPW010) | |
AU2003233103A1 (en) | Method for authentication between devices | |
TW200627594A (en) | A method to form a passivation layer | |
GB0703843D0 (en) | Devices, systems, and methods for flow-compensating pump-injector sychronization | |
WO2005107417A3 (en) | System and method for communicating with electronic devices | |
AU2003273003A1 (en) | Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor | |
AU2003276885A1 (en) | System and method for encrypted communications between electronic devices | |
AU2003900983A0 (en) | Methods, systems and apparatus (NPT023) | |
WO2007145875A3 (en) | Data coding | |
WO2005086709A3 (en) | Controlling jitter effects | |
AU2003239476A1 (en) | Hardware systems, methods and apparatuses for an automated dialysis machine | |
WO2005122731A3 (en) | Method to form a conductive structure | |
AU2003234811A1 (en) | Substrate processing device, substrate processing method, and developing device |