TW200617191A - Cooled back-plate for a sputter-target and sputter-target composed of several back-plates - Google Patents

Cooled back-plate for a sputter-target and sputter-target composed of several back-plates

Info

Publication number
TW200617191A
TW200617191A TW093138858A TW93138858A TW200617191A TW 200617191 A TW200617191 A TW 200617191A TW 093138858 A TW093138858 A TW 093138858A TW 93138858 A TW93138858 A TW 93138858A TW 200617191 A TW200617191 A TW 200617191A
Authority
TW
Taiwan
Prior art keywords
plate
sputter
target
plates
sealing
Prior art date
Application number
TW093138858A
Other languages
English (en)
Other versions
TWI286161B (en
Inventor
Joerg Krempel-Hesse
Andreas Jischke
Uwe Schuessler
Hans Wolf
Original Assignee
Applied Films Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Films Gmbh & Co Kg filed Critical Applied Films Gmbh & Co Kg
Publication of TW200617191A publication Critical patent/TW200617191A/zh
Application granted granted Critical
Publication of TWI286161B publication Critical patent/TWI286161B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
TW093138858A 2004-11-19 2004-12-15 Cooled back-plate for a sputter-target and sputter-target composed of several back-plates TWI286161B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04027573A EP1659193A1 (de) 2004-11-19 2004-11-19 Gekühlte Rückenplatte für ein Sputtertarget und Sputtertarget bestehend aus mehreren Rückenplatten

Publications (2)

Publication Number Publication Date
TW200617191A true TW200617191A (en) 2006-06-01
TWI286161B TWI286161B (en) 2007-09-01

Family

ID=34927465

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138858A TWI286161B (en) 2004-11-19 2004-12-15 Cooled back-plate for a sputter-target and sputter-target composed of several back-plates

Country Status (7)

Country Link
US (2) US20060108217A1 (zh)
EP (2) EP1659193A1 (zh)
JP (2) JP2006144111A (zh)
KR (1) KR100670095B1 (zh)
CN (2) CN101353780B (zh)
AT (1) ATE546561T1 (zh)
TW (1) TWI286161B (zh)

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* Cited by examiner, † Cited by third party
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US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
ATE546561T1 (de) 2004-11-19 2012-03-15 Applied Materials Gmbh & Co Kg Trägerplatte mit einer darauf aufgesetzten gekühlten rückenplatte
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
CN102234776A (zh) * 2010-04-22 2011-11-09 鸿富锦精密工业（深圳）有限公司 磁控溅镀装置
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
CN103785961B (zh) * 2012-11-01 2016-08-03 宁波江丰电子材料股份有限公司 背板的制作方法及背板
CN103981495A (zh) * 2013-02-07 2014-08-13 余姚康富特电子材料有限公司 靶材组件及其制备方法
DE102013216303A1 (de) * 2013-08-16 2015-02-19 Heraeus Materials Technology Gmbh & Co. Kg Sputtertarget, Vorrichtung zum Befestigen eines Sputtertargets, Verfahren zum Erkennen des Lösens eines Sputtermaterials sowie Herstellungsverfahren
CN104419900B (zh) * 2013-08-26 2017-05-31 宁波江丰电子材料股份有限公司 溅射靶材及其制作方法
US10090211B2 (en) * 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
CN104741776B (zh) * 2013-12-31 2016-07-06 宁波江丰电子材料股份有限公司 靶材组件的焊接方法
KR102470438B1 (ko) * 2020-09-28 2022-11-25 파인원 주식회사 개조된 일체형 백킹 플레이트 제조 방법
CN112899627B (zh) * 2021-01-16 2022-09-27 重庆电子工程职业学院 一种靶材安装结构、磁控溅射设备及磁控溅射方法

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JPS60110873A (ja) * 1983-11-17 1985-06-17 Fujitsu Ltd タ−ゲットの冷却方法
FR2573441B1 (fr) * 1984-11-19 1987-08-07 Cit Alcatel Cathode-cible pour depot, par pulverisation, d'un materiau composite sur un substrat
JPS6277461A (ja) 1985-09-30 1987-04-09 Shinku Kikai Kogyo Kk 高周波スパツタ電極のバツキングプレ−ト
JPH03140464A (ja) 1989-10-26 1991-06-14 Kobe Steel Ltd ターゲットのバッキング装置
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
JPH05132774A (ja) 1991-11-12 1993-05-28 Fujitsu Ltd スパツタ装置
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US6199259B1 (en) * 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
JPH10330931A (ja) * 1997-05-28 1998-12-15 Shimadzu Corp スパッタリングカソードおよびスパッタリング装置
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
KR100291330B1 (ko) * 1998-07-02 2001-07-12 윤종용 반도체장치제조용스퍼터링설비및이를이용한스퍼터링방법
DE19916938A1 (de) * 1999-04-15 2000-10-19 Leybold Systems Gmbh Vorrichtung zur Kühlung eines Targets mit einem Kühlmedium
US6494999B1 (en) * 2000-11-09 2002-12-17 Honeywell International Inc. Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode
DE10058769C1 (de) * 2000-11-27 2002-08-14 Singulus Technologies Ag Vorrichtung zum Kühlen eines rotationssymmetrischen Objekts
JP2002220661A (ja) * 2001-01-29 2002-08-09 Sharp Corp スパッタリング装置に用いられるバッキングプレートおよびスパッタリング方法
ATE546561T1 (de) 2004-11-19 2012-03-15 Applied Materials Gmbh & Co Kg Trägerplatte mit einer darauf aufgesetzten gekühlten rückenplatte

Also Published As

Publication number Publication date
JP5032384B2 (ja) 2012-09-26
CN101353780A (zh) 2009-01-28
EP1903123A2 (de) 2008-03-26
CN1776002A (zh) 2006-05-24
TWI286161B (en) 2007-09-01
EP1659193A1 (de) 2006-05-24
CN101353780B (zh) 2011-06-15
US20060108217A1 (en) 2006-05-25
KR20060056213A (ko) 2006-05-24
US20090134019A1 (en) 2009-05-28
EP1903123B1 (de) 2012-02-22
JP2006144111A (ja) 2006-06-08
ATE546561T1 (de) 2012-03-15
KR100670095B1 (ko) 2007-01-16
CN100471988C (zh) 2009-03-25
JP2008190047A (ja) 2008-08-21
EP1903123A3 (de) 2008-07-09
US7959776B2 (en) 2011-06-14

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