TW200616514A - Soft lithographic stamp with a chemically patterned surface - Google Patents

Soft lithographic stamp with a chemically patterned surface

Info

Publication number
TW200616514A
TW200616514A TW094121977A TW94121977A TW200616514A TW 200616514 A TW200616514 A TW 200616514A TW 094121977 A TW094121977 A TW 094121977A TW 94121977 A TW94121977 A TW 94121977A TW 200616514 A TW200616514 A TW 200616514A
Authority
TW
Taiwan
Prior art keywords
printing
regions
stamp
compound
printing compound
Prior art date
Application number
TW094121977A
Other languages
Chinese (zh)
Inventor
Michel Marcel Jose Decre
Martin Blees
Eerd Patrick Petrus Johannes Van
Richard Joseph Marinus Schroeders
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200616514A publication Critical patent/TW200616514A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Printing Methods (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a soft lithographic stamp (30) and a method for the manufacturing of such a stamp (30). A stamp (30) according to the present invention comprises blocking regions (37) and printing regions (38). The blocking regions (37) are formed of a material which is different from the material the printing regions (38) are formed of and which exhibits a reduced permeability, diffusivity or absorbing or adsorbing capability to the printing compound, such that it prevents or significantly reduces chemical or physical transport or transfer of the printing compound from the blocking regions to a substrate that has to be patterned or printed. In that way, when impregnating the stamp (30) with a printing compound, the printing compound only diffuses into the printing regions (38) and hence, the printing compound is only transferred from the printing regions (38) to the substrate to be patterned and substantially no diffusion of printing compound via air voids (33) between protruding elements (32) will occur.
TW094121977A 2004-06-30 2005-06-29 Soft lithographic stamp with a chemically patterned surface TW200616514A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04103075 2004-06-30

Publications (1)

Publication Number Publication Date
TW200616514A true TW200616514A (en) 2006-05-16

Family

ID=35783222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121977A TW200616514A (en) 2004-06-30 2005-06-29 Soft lithographic stamp with a chemically patterned surface

Country Status (3)

Country Link
CN (1) CN101198902A (en)
TW (1) TW200616514A (en)
WO (1) WO2006003594A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US7959975B2 (en) 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
DE102007024653A1 (en) 2007-05-26 2008-12-04 Forschungszentrum Karlsruhe Gmbh Stamp for microcontact printing and process for its preparation
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides

Also Published As

Publication number Publication date
WO2006003594A2 (en) 2006-01-12
CN101198902A (en) 2008-06-11
WO2006003594A3 (en) 2006-06-22

Similar Documents

Publication Publication Date Title
WO2006003592A3 (en) Soft lithographic stamp with a chemically patterned surface
TW200616514A (en) Soft lithographic stamp with a chemically patterned surface
TW200707083A (en) Method for forming a lithograohy pattern
WO2002045183A3 (en) Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof
AU4960101A (en) Continuous process for manufacture of disposable electro-chemical sensor
MY135469A (en) Single phase fluid imprint lithography method
WO2005074449A3 (en) Structure comprising amorphous carbon film and method of forming thereof
WO2009147602A3 (en) Silicone rubber material for soft lithography
WO2006044690A3 (en) Low-k dielectric functional imprinting materials
TW200705114A (en) Imprint lithography
EP2182548A3 (en) Group lll-V semiconductor device on SiC substrate
EA200600165A1 (en) METHOD AND DEVICE FOR OBTAINING A PATTERN IN THE COATING CONTAINING PARTICLES OF MAGNETIC MATERIAL DUE TO THE EXPOSURE OF THE MAGNETIC FIELD
WO2006036366A3 (en) Method of forming a solution processed device
WO2006029414A3 (en) Method of making a microelectronic and/or optoelectronic circuitry sheet
TW200710559A (en) Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof
WO2006060757A3 (en) Eliminating printability of sub-resolution defects in imprint lithography
TW200629374A (en) Patterning substrates employing multi-film layers defining etch-differential interfaces
SG130083A1 (en) A system and method for photolithography in semiconductor manufacturing
ATE554941T1 (en) IMPROVEMENTS TO PRINTING OVERLAYED LAYERS
MY167509A (en) Film tyoe transfer material
JP2008516821A5 (en)
TW200737300A (en) Reflexible photo-mask blank, manufacturing method thereof, reflexible photomask, and manufacturing method of semiconductor apparatus
TW200633610A (en) Soft lithographic stamp with a chemically patterned surface
TW200700928A (en) Semiconductor device manufacturing method for preventing patterns from inclining in drying process
TWI369582B (en) Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition